Patent application number | Description | Published |
20100061215 | Optical Information Recording and Reproducing Apparatus and Optical Information Recording Apparatus - An optical information recording and reproducing apparatus for recording information on a recording medium by forming interference fringes generated by interference between an information beam and a reference beam on the recording medium and for reproducing the information by irradiating, with the reference beam, the recording medium, in which the interference fringes are formed. The apparatus includes a spatial light modulator for spatially modulating at least a portion of a light beam emitted from a light source into the information beam. A light sensing device reads the information beam extracted from the recording medium by the reference beam irradiated on the recording medium. A shift amount detector detects a shift of the irradiating position of the light beam entering the spatial light modulator, and a device corrects a positional shift between a position of an area for modulating the information beam and a position of the light beam in the spatial light modulator based on a positional shift amount detected by the shift amount detector. | 03-11-2010 |
20100203667 | MANUFACTURING METHOD FOR A SOLID-STATE IMAGE SENSOR - A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order. | 08-12-2010 |
20100203670 | SEMICONDUCTOR DEVICE FABRICATION METHOD - A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other. | 08-12-2010 |
20110007196 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 01-13-2011 |
20110136291 | MANUFACTURING METHOD OF A SOLID-STATE IMAGE PICKUP APPARATUS - Provided is a manufacturing method of a solid-state image pickup apparatus including: a step of forming a first semiconductor region of a first conductivity type in a semiconductor substrate, according to an ion implantation method from a first surface of the semiconductor substrate; a step of forming a plurality of photoelectric conversion regions between the first semiconductor region and the first surface of the semiconductor substrate; a first removing step by polishing the semiconductor substrate from a second surface of the semiconductor substrate; and a second removing step by reducing a thickness of the semiconductor substrate from the second surface of the semiconductor substrate, in a speed lower than that of the first removing step, after the first removing step, in which the second removing step continues until the first semiconductor region is exposed. | 06-09-2011 |
20110155893 | SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. | 06-30-2011 |
20110234868 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion apparatus comprises multiple photoelectric conversion portions ( | 09-29-2011 |
20110240835 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA - A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 10-06-2011 |
20110242388 | IMAGE SENSING DEVICE AND CAMERA - An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region. | 10-06-2011 |
20110249163 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 10-13-2011 |
20120199725 | PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion. | 08-09-2012 |
20120200728 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM - A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other. | 08-09-2012 |
20120200751 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens. | 08-09-2012 |
20120267690 | SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect. | 10-25-2012 |
20120267747 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region | 10-25-2012 |
20130206964 | SOLID-STATE IMAGING APPARATUS WITH EACH PIXEL INCLUDING A PHOTOELECTRIC CONVERSION PORTION AND PLURAL HOLDING PORTIONS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 08-15-2013 |
20130221473 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE PICKUP SYSTEM AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate. | 08-29-2013 |
20130248953 | SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. | 09-26-2013 |
20140168492 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 06-19-2014 |
20140306309 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens. | 10-16-2014 |
20150031162 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE PICKUP SYSTEM AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate. | 01-29-2015 |
Patent application number | Description | Published |
20080224146 | Semiconductor Apparatus, Solid State Image Pickup Device Using the Same, and Method of Manufacturing Them - The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. | 09-18-2008 |
20080287128 | Server - A service processing server for providing a communication processing service with an information providing server, to a cell phone belonging to a network capable of identifying subordinate cell phones, and including an application receiving part for receiving first communication terminal-specific information to specify a specific cell phone, and service-specific information in association with each other; a specific information generating part for generating second communication terminal-specific information; an approval requesting part for transmitting approval request information containing the service-specific information and the second communication terminal-specific information, to the information providing server; a result receiving part for receiving approval result information returned; and a registering part for performing a registration process for providing the communication processing service to the specific cell phone in accordance with reception of the approval result information. | 11-20-2008 |
20090085144 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C | 04-02-2009 |
20090303425 | REFLECTION TYPE LIQUID CRYSTAL DISPLAY APPARATUS AND LIQUID CRYSTAL PROJECTOR SYSTEM - In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region | 12-10-2009 |
20100096676 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C | 04-22-2010 |
20100123835 | RADIO LSI DEVICE AND INTERFERING WAVE DETECTING CIRCUIT - A radio LSI device includes an interfering wave detecting circuit that receives an RSSI signal for a current transmit/receive channel. The interfering wave detecting circuit includes a field intensity determiner that determines whether or not the value of the RSSI signal is greater than a predetermined threshold value. The interfering wave detecting circuit also includes a duration counter that counts the duration of an interfering wave whose RSSI value is greater than the predetermined threshold value. The interfering wave detecting circuit also includes a duration comparator that, if the duration exceeds a duration comparative value, generates an interrupt signal. The radio LSI device changes the setting of the current transmit/receive channel in response to the interrupt signal. | 05-20-2010 |
20100140457 | SEMICONDUCTOR APPARATUS, SOLID STATE IMAGE PICKUP DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THEM - The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. | 06-10-2010 |
20100219497 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region. | 09-02-2010 |
20110163407 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C | 07-07-2011 |
20110316581 | SEMICONDUCTOR DEVICE WITH BUS CONNECTION CIRCUIT AND METHOD OF MAKING BUS CONNECTION - A semiconductor device capable of achieving desirable communication behavior through a bus regardless of whether or not a pull-up resistor is connected on a bus line. The semiconductor device includes external pull-up determination unit and internal pull-up setting unit. The external pull-up determination unit applies a pull-down voltage through an internal pull-down resistor to the bus line, and determines whether an external pull-up resistor external to the semiconductor device is connected on the bus line on the basis of the voltage level of the bus line when the pull-down voltage is applied to the bus line. The internal pull-up setting unit stops application of the pull-down voltage, and applies a pull-up voltage through an internal pull-up resistor to the bus line if it is determined that no external pull-up resistor is connected on the bus line. The internal pull-up setting unit stops application of the pull-down voltage if it is determined that the external pull-up resistor is connected on the bus line. | 12-29-2011 |
Patent application number | Description | Published |
20120046761 | INFORMATION PROCESSING DEVICE, COMMUNICATION SYSTEM, AND INFORMATION PROCESSING METHOD - An information processing device includes: a receiving unit that receives information to be processed that includes valid data, that has processing content information and identification information, and start information; and a control unit that controls an apparatus such that an initial processing is executed on the basis of the processing content information, and, if the identification information is included in the information to be processed, controls the apparatus such that processing that follows the initial processing is executed, and, if the identification information is not included in the information to be processed, controls the apparatus such that the processing that follows the initial processing is not executed. | 02-23-2012 |
20120249760 | COMMUNICATION DEVICE, CONTROL SIGNAL GENERATION METHOD, SHUTTER GLASSES, AND COMMUNICATION SYSTEM - A communication device allows control of a device to be controlled such as a display device based on reference timing acquired from reception data without delay and with low power consumption. A method for generating a control signal for controlling the device to be controlled, shutter glasses, and a communication system having the corresponding features are also disclosed. The communication device includes a timing signal identifying part which identifies whether or not a predetermined reference signal pattern exist in data incoming intermittently, and a control signal generating part which generates a control signal for the device to be controlled when the existence of the predetermined signal pattern is identified by the timing signal identification part, and a controller which performs the control of the communication device. | 10-04-2012 |
20120249884 | RECEIVER, SHUTTER GLASSES, AND COMMUNICATION SYSTEM - A receiver allows controlling a device to be controlled such as a display device based on reference timing acquired from reception data without delay and with low power consumption, and includes: a communication device receiving data incoming intermittently; a first control circuit analyzing the data received by the communication device to identify the presence of a predetermined reference timing signal pattern in the data; and a timer for counting a clock from an initial value, generating a control signal for the device to be controlled according to a resulting count value, and if the count value reaches a predetermined interval value, resuming counting the clock at the initial value. The timer changes the initial value to reduce a count of the clock between the initial value and the interval value if the first control circuit identifies the predetermined reference timing signal pattern to be present. | 10-04-2012 |
20120315857 | WIRELESS COMMUNICATION METHOD AND APPARATUS - A wireless communication method and apparatus that produce only a small amount of transmission delay even when carrier sensing is performed. Intensity indication data indicating the radio wave intensity of a received wireless signal is generated. The intensity indication data is intermittently captured and retained. An average of the retained intensity indication data is calculated. If the average is less than or equal to a threshold, a wireless transmission operation is enabled. The average is calculated with a frequency according to the frequency of capturing of the intensity indication data. The average and the threshold are compared at a frequency corresponding to the frequency of calculation of the average. | 12-13-2012 |