Patent application number | Description | Published |
20100079636 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MAKING THE SAME - A photoelectric conversion device includes a semiconductor substrate, a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, a third insulating film on the second insulating film, and a wiring disposed in the third insulating film, the wiring being a wiring layer closest to the semiconductor substrate. A first plug of a shared contact structure and a second plug are disposed in the first insulating film. A third plug and a first wiring that constitute a dual damascene structure are disposed in the second and third insulating films. The first insulating film is used as an etching stopper film during etching of the second insulating film and the second insulating film is used as an etching stopper film during etching of the third insulating film. | 04-01-2010 |
20100230728 | MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE - A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously. | 09-16-2010 |
20100308430 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line. | 12-09-2010 |
20110227182 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor including an effective pixel portion in which a plurality of pixels including photodiodes formed on a semiconductor substrate are arranged, and a peripheral portion arranged around the effective pixel portion, includes a plurality of metal wiring layers arranged above the semiconductor substrate, and a planarizing film covering a patterned metal wiring layer that is a top layer among the plurality of metal wiring layers, wherein in the effective pixel portion, the plurality of metal wiring layers have openings configured to guide light to the photodiodes, and in the peripheral portion, an opening is provided in the top layer, and at least one metal wiring layer between the top layer and the semiconductor substrate has a pattern which blocks light incident on the photodiodes via the opening in the top layer. | 09-22-2011 |
20130122644 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line. | 05-16-2013 |
20140065753 | METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR - A method of manufacturing a solid-state image sensor having a pixel region and a peripheral circuit region, includes forming an oxide film on a semiconductor substrate, forming an insulating film on the oxide film, forming a first opening in the insulating film and the oxide film in the peripheral circuit region, forming a trench in the semiconductor substrate in the peripheral circuit region by etching the semiconductor substrate through the first opening using the insulating film as a mask, forming a second opening in the insulating film to penetrate through the insulating film in the pixel region and to reach a predetermined depth of the oxide film, and forming insulators in the trench and the second opening. | 03-06-2014 |
Patent application number | Description | Published |
20100182888 | Optical Disc Apparatus - An optical disc apparatus comprising: a spindle motor configured to drive a turntable on which an optical disc is loaded to rotate; a first substrate on which a first support member rotatably supporting a rotation shaft of the spindle motor is fixed, and on which a second support member is formed at a position adjacent to the spindle motor; a second substrate; an optical pickup device; and a guide member configured to guide the optical pickup device in a radial direction of the optical disc loaded on the turntable, one end of the guide member being supported by the second support member on the first substrate and fixed to a fixing member on the second substrate, and the other end of the guide member being fixed to the fixing member on the second substrate. | 07-22-2010 |
20110258646 | OPTICAL PICKUP SUPPORTING DEVICE AND OPTICAL DISC APPARATUS INCLUDING THE SAME - Provided is a low-cost, high-accuracy optical pickup supporting device by simplifying a structure for fixing guide shafts to a chassis. To this end, an optical pickup supporting device includes: a frame-shaped chassis; a first guide shaft and a second guide shaft, two ends of each of which are fixed to the chassis; an optical pickup device movably supported by the two guide shafts; and a spindle motor fixed to the chassis with a motor supporting member interposed in between. Furthermore, in a first fixation region in which the first guide shaft is fixed to the chassis, the position of the first guide shaft is fixed with higher accuracy by: a fixation area obtained by protruding parts of the chassis; and a position regulating portion which is a part of the motor supporting member. | 10-20-2011 |
20110258647 | OPTICAL PICKUP FEEDING DEVICE AND OPTICAL PICKUP SUPPORTING DEVICE INCLUDING THE SAME - Multiple regulating portions protruding more than tooth portions of the rack are provided in positions, between which a feed shaft is interposed, in the vicinity of the tooth portions. Each regulating portion has an inclined surface which is opposed to a periphery of the feed shaft, and which is isolated more from the feed shaft as the inclined surface becomes farther from arm portions. Thereby, it is possible to restrain thin portions of the rack from twistedly deforming when the tooth portions come out of mesh with a groove of the feed shaft. In addition, it is possible to prevent the rack from coming off the feed shaft to a large extent. | 10-20-2011 |
20110258648 | OPTICAL PICKUP SUPPORTING DEVICE AND OPTICAL DISC APPARATUS INCLUDING THE SAME - Provided is a high-accuracy optical pickup supporting device by fixing guide shafts to a chassis by use of adjustment screws accurately. To this end, in the optical pickup supporting device, an end portion of a second guide shaft for supporting an optical pickup device is fixed to the chassis by use of: a coil spring included in an accommodation area of the chassis; and an adjustment screw. In addition, the adjustment screw is screwed to a fixation plate accommodated in an accommodation part of the chassis. Accordingly, a repulsive force produced by the coil spring does not concentrate on any part of the chassis. For this reason, the chassis is prevented from deforming and breaking due to this repulsive force. | 10-20-2011 |
Patent application number | Description | Published |
20110215323 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 09-08-2011 |
20110215861 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. | 09-08-2011 |
20110255046 | DISPLAY DEVICE AND ELECTRONIC BOOK - It is an object to provide a display device exhibiting high visibility and having a touch recognition function. The display device includes a display portion and a sensor portion. The display portion includes a first liquid crystal element including a polymer-scattered liquid crystal. The sensor portion includes a light-receiving element and a second liquid crystal element including a polymer-dispersed liquid crystal provided over the light-receiving element. The first liquid crystal element and the second liquid crystal element are driven independently from each other. The light-receiving element receives light transmitting through the second liquid crystal element. | 10-20-2011 |
20120002090 | SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE - An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group. | 01-05-2012 |
20120056252 | ELECTRONIC DEVICE - An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire. | 03-08-2012 |
20120132791 | METHOD FOR DRIVING PHOTOSENSOR, METHOD FOR DRIVING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor. | 05-31-2012 |
20120154337 | Semiconductor Device and Driving Method Thereof - A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided. | 06-21-2012 |
20120217515 | DISPLAY DEVICE - A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor. | 08-30-2012 |
20130222584 | IMAGE SENSOR, CAMERA, SURVEILLANCE SYSTEM, AND METHOD FOR DRIVING THE IMAGE SENSOR - Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods. | 08-29-2013 |
20130299888 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 11-14-2013 |
20130321366 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME - To reduce the effect of external light and to improve the accuracy of detecting the location of a touch. In an image-capture period, light emission from a self-light-emitting element is controlled, and imaging data at the time of displaying white on a display screen and imaging data at the time of displaying black on the display screen are output from each sensor pixel. The location of a sensor pixel where a difference between the two pieces of imaging data output from the same sensor pixel is the greatest is detected. Thus, the location of a touch of the object on the display screen is detected with high accuracy. By utilizing a difference between imaging data at the time of reverse display, the effect of external light can be reduced. | 12-05-2013 |
20140126271 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - To provide a semiconductor device in which power consumption can be reduced and operation delay due to a stop and a restart of supply of power supply voltage can be suppressed and a driving method thereof. A potential corresponding to data held in a period during which power supply voltage is continuously supplied is saved to a node connected to a capacitor before the supply of power supply voltage is stopped. By utilizing change of channel resistance of a transistor whose gate is the node, data is loaded when the supply of power supply voltage is restarted. | 05-08-2014 |
20140286076 | SEMICONDUCTOR DEVICE - A nonvolatile semiconductor device which can be driven at low voltage is provided. A nonvolatile semiconductor device with low power consumption is provided. A Schmitt trigger NAND circuit and a Schmitt trigger inverter are included. Data is held in a period when the supply of power supply voltage is continued, and a potential corresponding to the data is stored at a node electrically connected to a capacitor before a period when the supply of power supply voltage is stopped. By utilizing a change in channel resistance of a transistor whose gate is connected to the node, the data is restored in response to the restart of the supply of power supply voltage. | 09-25-2014 |
20140368235 | PROGRAMMABLE LOGIC DEVICE - Data of a register in a programmable logic element is retained. A volatile storage circuit and a nonvolatile storage circuit are provided in a register of a programmable logic element whose function can be changed in response to a plurality of context signals. The nonvolatile storage circuit includes nonvolatile storage portions for storing data in the register. The number of nonvolatile storage portions corresponds to the number of context signals. With such a structure, the function can be changed each time context signals are switched and data in the register that is changed when the function is changed can be backed up to the nonvolatile storage portion in each function. In addition, the function can be changed each time context signals are switched and the data in the register that is backed up when the function is changed can be recovered to the volatile storage circuit. | 12-18-2014 |
20150060978 | SEMICONDUCTOR DEVICE - To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell. | 03-05-2015 |
20150108556 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. | 04-23-2015 |
20150116000 | PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE - To provide a PLD having a reduced circuit area and an increased operation speed. In the circuit structure, a gate of a transistor provided between an input terminal and an output terminal of a programmable switch element is in an electrically floating state in a period when a signal is input to the programmable switch element. The structure enables the voltage of a gate to be increased by a boosting effect in response to a signal supplied from programmable logic elements, suppressing a reduction in amplitude voltage. This can reduce a circuit area by a region occupied by a booster circuit such as a pull-up circuit and increase operation speed. | 04-30-2015 |
20150129944 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 05-14-2015 |
20150188520 | SEMICONDUCTOR DEVICE - A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels. | 07-02-2015 |
20150213846 | SEMICONDUCTOR DEVICE - To provide a semiconductor device having a novel configuration, in which a malfunction and power consumption are reduced. A data holding circuit which includes a flipflop including first and second latch circuits and a shadow register including a nonvolatile memory portion; and a control signal generation circuit which generates a first control signal supplied to the first latch circuit and a second control signal supplied to the second latch circuit are included. The shadow register is a circuit which controls data saving or data restoring between the first and second latch circuits on the basis of a saving control signal or a restore control signal. The control signal generation circuit is a circuit which generates the first and second control signals at L level in a period during which data is saved or restored, on the basis of a clock signal, the saving control signal, and the restore control signal. | 07-30-2015 |
Patent application number | Description | Published |
20120192634 | ABNORMALITY DETERMINATION DEVICE FOR AIR-FUEL RATIO SENSOR - An abnormality determination device for an air-fuel ratio sensor includes a differential value calculator and an abnormality determiner. The differential value calculator is configured to calculate a differential value of an output value of the air-fuel ratio sensor which is configured to detect an air-fuel ratio of exhaust gas. The abnormality determiner is configured to determine abnormality of the air-fuel ratio sensor based on a result of comparison between a reference output value of the air-fuel ratio sensor and a predetermined threshold. The reference output value is obtained by the air-fuel ratio sensor when the differential value calculated by the differential value calculator becomes a predetermined value. | 08-02-2012 |
20120310512 | ABNORMALITY DETERMINING APPARATUS FOR AIR-FUEL RATIO SENSOR - An abnormality determining apparatus includes an air-fuel ratio controller, an output change period parameter calculator, an output change amount extremum calculator, and an abnormality determining device. The abnormality determining device is configured to determine an abnormality of an air-fuel ratio sensor based on a relationship between an output change period parameter and an output change amount extremum. | 12-06-2012 |
20130054112 | APPARATUS FOR CONTROLLING AIR-FUEL RATIO OF INTERNAL-COMBUSTION ENGINE - An apparatus for controlling an air-fuel ratio of an internal-combustion engine includes an air-fuel ratio detector, a fluctuation signal generating device, an air-fuel ratio fluctuation device, a 0.5th-order frequency component strength calculator, a fluctuation frequency component strength calculator, a reference component strength calculator, and an imbalance fault determining device. The reference component strength calculator is configured to calculate strength of a reference component in accordance with strength of a first frequency component and strength of a second frequency component. The imbalance fault determining device is configured to make a determination of an imbalance fault in which air-fuel ratios of a plurality of cylinders vary beyond a tolerance limit on a basis of a relative relationship between strength of the 0.5th-order frequency component and the strength of the reference component. | 02-28-2013 |
20130131962 | AIR-FUEL RATIO CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE - An air-fuel ratio control apparatus for an internal combustion engine includes an air-fuel ratio detector, a fuel amount controller, an operational state parameter acquiring device, an extractor, a failure determination device, a variation state parameter calculator, and a determination stopping device. The operational state parameter acquiring device is configured to acquire at least one operational state parameter. The failure determination device is configured to execute failure determination of determining a failure in an air-fuel ratio control system of the internal combustion engine based on a specific frequency component extracted by the extractor. The variation state parameter calculator is configured to calculate a variation state parameter. The determination stopping device is configured to stop the failure determination if the variation state parameter calculated by the variation state parameter calculator is equal to or larger than a predetermined threshold value. | 05-23-2013 |