Patent application number | Description | Published |
20080261400 | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR FORMING COPPER WIRING FOR SEMICONDUCTOR INTEGRATED CIRCUIT - The present invention provides a technique for realizing highly flat surface of a semiconductor integrated circuit employing copper as a wiring metal. | 10-23-2008 |
20100035433 | POLISHING AGENT COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Provided is a polishing agent composition for chemical mechanical polishing, which is used for polishing a surface of a semiconductor integrated circuit device to be polished. The polishing agent composition contains silica particles, one or more oxidizing agents selected from the group consisting of hydrogen peroxide, ammonium persulfate and potassium persulfate, a compound represented by formula (1), pullulan, one or more acids selected from the group consisting of nitric acid, sulfuric acid and carboxylic acids, and water, and has a pH within the range of 1-5. According to the present invention, a flat surface of an insulating layer having a buried metal interconnect can be attained in polishing of a surface to be polished during production of a semiconductor integrated circuit device. Further, a semiconductor integrated circuit device having a highly planarized multilayer structure can be obtained. | 02-11-2010 |
20100086864 | METHOD OF POLISHING GLASS SUBSTRATE - The present invention is to provide a method of polishing a glass substrate required to have extremely high surface smoothness and surface accuracy like glass substrates for mask blanks. The invention relates to a method of polishing a glass substrate which comprises polishing the glass substrate with a polishing pad while supplying a polishing slurry comprising an abrasive material and water to the polishing pad, wherein the polishing slurry contains at least one member selected from the group consisting of pullulan and water-soluble alcohols which are polyvalent organic compounds having two or more OH groups. The slurry preferably has a pH adjusted to 0.5-4. | 04-08-2010 |
20100099259 | POLISHING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In polishing of a to-be-polished surface in the production of a semiconductor integrated circuit device, a flat surface of an insulating layer having an embedded metal interconnect can be obtained. Further, a semiconductor integrated circuit device having a highly planarized multilayer structure can be obtained. Provided is a polishing composition which is a chemical mechanical polishing composition for polishing a to-be-polished surface of a semiconductor integrated circuit device, contains one or more oxidizing agents selected from the group consisting of hydrogen peroxide, ammonium persulfate and potassium persulfate, an abrasive grain, an alicyclic resin acid, a basic compound and inorganic acid, and has a pH ranging from 8 to 12. | 04-22-2010 |
20140094032 | POLISHING AGENT AND POLISHING METHOD - A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20. | 04-03-2014 |
20140187043 | POLISHING AGENT AND POLISHING METHOD - A non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate is polished at a high polishing rate, whereby a smooth surface is obtained. There is provided a polishing agent containing: an oxidant that contains a transition metal and has a redox potential of 0.5 V or more; silica particles that have an average secondary particle size of 0.2 μm or less; and a dispersion medium, wherein a content ratio of the oxidant is not less than 0.25 mass % nor more than 5 mass %, and a content ratio of the silica particles is not less than 0.01 mass % and less than 20 mass %. | 07-03-2014 |
20140220299 | SINGLE-CRYSTAL SILICON-CARBIDE SUBSTRATE AND POLISHING SOLUTION - The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less. | 08-07-2014 |
20140308879 | ADDITIVE FOR POLISHING AGENT, AND POLISHING METHOD - The present invention relates to an additive for a polishing agent, which is capable of suppressing a decrease in polishing characteristics of a polishing agent to be repeatedly used, particularly a removal rate, by adding the additive to the polishing agent as needed during repeated uses. The invention also relates to a polishing method using a polishing agent to be repeatedly used, which is capable of suppressing a decrease in polishing characteristics of the polishing agent, particularly a removal rate. | 10-16-2014 |