Patent application number | Description | Published |
20090095252 | Engine Unit and Vehicle Including The Same - An engine unit that has a throttle valve driving actuator securely fixed thereto, and in which the vibration caused on the actuator is small. The engine unit includes a V-type engine and a throttle body assembly. The throttle body assembly has first and second front and rear throttle bodies, an actuator, a transmission gear mechanism, and a casing that houses the actuator and the transmission gear mechanism. The casing has a first casing portion that is fixed to the first front and rear throttle bodies, and a second casing portion that faces the first casing portion in a width direction and is fixed to at least one of the second front and rear throttle bodies. | 04-16-2009 |
20090095254 | Engine Unit and Vehicle Including The Same - An engine unit includes a V-type engine and a throttle body assembly. The throttle body assembly has front and rear throttle bodies, an actuator and a second rotational shaft. The front throttle bodies include front throttle valves that open and close front cylinders. The rear throttle bodies include rear throttle valves that open and close rear cylinders. The actuator is disposed, in a longitudinal direction, between center axes of the front cylinders and center axes of the rear cylinders. A shaft center of the second rotational shaft is located to the front of or to the rear of a shaft center of a first rotational shaft. | 04-16-2009 |
20090101088 | Engine Unit And Vehicle Provided With The Same - An engine unit with a decreased height dimension and longitudinal length comprises an engine and a throttle body assembly. The throttle body assembly includes front and rear throttle bodies formed with front and rear air cylinders and throttle valves. A fuel supply pipe is arranged between central axes of the air cylinders in a longitudinal direction to extend widthwise in a lower position than upper ends of the throttle bodies. A motor for driving throttle valves is arranged between the central axes of the air cylinders in the longitudinal direction. An axis of a rotating shaft of the motor is positioned forwardly or rearwardly of a central axis of the fuel supply pipe. | 04-23-2009 |
20110094814 | SNOWMOBILE - A snowmobile includes a throttle motor that is protected from brake dust. The snowmobile includes a snowmobile body including an engine room therein, an engine disposed inside the engine room, brake equipment disposed inside the engine room, a throttle valve arranged to adjust intake air supplied to the engine, and a throttle motor which is disposed at a more forward position than the brake equipment inside the engine room and arranged to drive the throttle valve. | 04-28-2011 |
20120305324 | SNOWMOBILE - A snowmobile includes a throttle motor that is protected from brake dust. The snowmobile includes a snowmobile body including an engine room therein, an engine disposed inside the engine room, brake equipment disposed inside the engine room, a throttle valve arranged to adjust intake air supplied to the engine, and a throttle motor which is disposed at a more forward position than the brake equipment inside the engine room and arranged to drive the throttle valve. | 12-06-2012 |
Patent application number | Description | Published |
20090020822 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an n-type MIS transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate electrode formed on a first active region and a first sidewall formed on the side face of the first gate electrode. The p-type MIS transistor includes a second gate electrode formed on a second active region, a second sidewall formed on the side face of the second gate electrode and strain layers formed in the second active region. The second sidewall has a smaller thickness than the first sidewall. | 01-22-2009 |
20090020828 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A first MIS transistor includes a first source/drain region formed outside a first sidewall spacer in a first active region, a first silicide film formed on the first source/drain region, and a stressor insulating film formed on a first gate electrode, the first sidewall spacer, and the first silicide film. A second MIS transistor includes a second source/drain region formed outside a second sidewall spacer in a second active region, a first protection film formed, extending over a second gate electrode, the second sidewall spacer, and a portion of the second source/drain region, and including a first protection insulating film and a second protection insulating film, a second silicide film formed outside the first protection film on the second source/drain region, and the stressor insulating film formed on the first protection film and the second silicide film. | 01-22-2009 |
20090026551 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode. | 01-29-2009 |
20090032878 | Semiconductor device and fabrication method thereof - A semiconductor device comprises a first gate electrode formed on a first region of a semiconductor substrate, a first impurity layer formed at least below both ends of the first gate electrode in the first region, a first side wall formed on both side surfaces of the first gate electrode, and a second impurity layer formed on both sides of the first side wall as viewed from the first gate electrode in the first region. The first impurity layer includes a first-conductivity type first impurity and a first-conductivity type second impurity having a larger mass number than that of the first impurity. | 02-05-2009 |
20090108368 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gate electrode of one of an nFET and a pFET includes a metal-containing layer in contact with a gate insulating film and a first silicon-containing layer formed on the metal-containing layer, and a gate electrode of the other FET includes a second silicon-containing layer in contact with a gate insulating film and a third silicon-containing layer formed on the second silicon-containing layer. The first silicon-containing layer and the third silicon-containing layer are formed by the same silicon-containing material film. | 04-30-2009 |
20110039379 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode. | 02-17-2011 |
20110163388 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an n-type MIS transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate electrode formed on a first active region and a first sidewall formed on the side face of the first gate electrode. The p-type MIS transistor includes a second gate electrode formed on a second active region, a second sidewall formed on the side face of the second gate electrode and strain layers formed in the second active region. The second sidewall has a smaller thickness than the first sidewall. | 07-07-2011 |
20120019746 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal display device ( | 01-26-2012 |
20150068674 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A method of manufacturing the liquid crystal display device (display device) includes: a step of coating a liquid adhesive material on at least one of opposing surfaces of a liquid crystal display panel (display panel) that displays images or a parallax barrier panel (function panel) to be stacked onto the liquid crystal display panel; a step of attaching the liquid crystal display panel to the parallax barrier panel through an adhesive material; and a step of partial curing in which an overlapping portion of the adhesive material overlapping in a plan view an outer edge portion of at least one of the liquid crystal display panel and the parallax barrier panel is cured. | 03-12-2015 |
Patent application number | Description | Published |
20090065355 | BIOSENSOR CAPABLE OF SIMULTANEOUS DETECTION OF SUBSTRATE BINDING AND REACTION PRODUCT - An object of the present invention is to provide a biosensor that can detect binding of a compound with a functional protein and then assay a reaction product derived from the activity of the functional protein again. The present invention provides a biosensor for detecting a test molecule specifically binding to a physiologically active substance, which comprises; (1) (a) a first reaction region on which the physiologically active substance has been immobilized for performing a binding reaction between the physiologically active substance and the test molecule and a physiologically active reaction caused by the physiologically active substance, and (b) a second reaction region on which a molecule that specifically binds to a reaction product resulting from the physiologically active reaction has been immobilized for performing a binding reaction between the reaction product and the molecule that specifically binds to the reaction product, in the same area; and (2) an assay region for detecting changes in the binding reaction in the first reaction region and in the binding reaction in the second reaction region. | 03-12-2009 |
20100294234 | FUEL INJECTION METHOD FOR DIESEL ENGINE AND DIESEL ENGINE - In a diesel engine | 11-25-2010 |
20110155101 | FUEL INJECTION METHOD FOR DIESEL ENGINE AND DIESEL ENGINE - In a diesel engine including a fuel injection valve for injection of fuel into a combustion chamber to produce sprays in the chamber, an axis of the valve is deviated radially outwardly of an axis of a cylinder, so that the valve is positioned close to an inner periphery of the cylinder. Nozzle holes of the valve are grouped into two groups with respect to a line formed by connecting, in plan view, the axis of the valve with the axis of the cylinder. The sprays injected from the nozzle holes advance in a fan-like manner in the plan view and strike against the inner periphery of the cylinder on a side away from the valve. | 06-30-2011 |
20150075485 | TWO-STROKE UNIFLOW ENGINE - A two-stroke uniflow engine is provided with: a cylinder; a piston; an exhaust valve that is opened and closed in order to discharge exhaust gas that is generated inside the cylinder; a scavenging port that takes active gas into the interior of the cylinder in accordance with a sliding movement of the piston; a fuel injection port that is provided in the internal circumferential surface of the cylinder; a fuel injection valve that injects fuel gas into the fuel injection port; and a fuel injection control unit that executes control of the injection of the fuel gas in the fuel injection valve, wherein the fuel injection control unit decides at least one of an injection pressure and an injection time of the fuel injection valve based on a change in pressure inside the cylinder that is caused by a reciprocating movement of the piston. | 03-19-2015 |
Patent application number | Description | Published |
20100001348 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film. | 01-07-2010 |
20100173465 | SEMICONDUCTOR DEVICE HAVING SILICIDE TRANSISTORS AND NON-SILICIDE TRANSISTORS FORMED ON THE SAME SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor. | 07-08-2010 |
20110169100 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal. | 07-14-2011 |
20110248346 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film. | 10-13-2011 |
20110272815 | SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME - A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features. | 11-10-2011 |
20110284935 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof. | 11-24-2011 |
20120139055 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film which is formed on a first active region of a semiconductor substrate and has a first high dielectric constant film, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film which is formed on a second active region of the semiconductor substrate and has a second high dielectric constant film, and a second gate electrode formed on the second gate insulating film. The second high dielectric constant film contains first adjusting metal. The first high dielectric constant film has a higher nitrogen concentration than the second high dielectric constant film, and does not contain the first adjusting metal. | 06-07-2012 |
20120146156 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME - A semiconductor device includes an MIS transistor and an electric fuse. The MIS transistor includes a gate insulating film formed on the semiconductor substrate, and a gate electrode including a first polysilicon layer, a first silicide layer, and a first metal containing layer made of a metal or a conductive metallic compound. The electric fuse includes an insulating film formed on the semiconductor substrate, a second polysilicon layer formed over the insulating film, and a second silicide layer formed on the second polysilicon layer. | 06-14-2012 |
20130020654 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second MIS transistors and a dummy element. The first MIS transistor includes a first gate insulating film which includes a first high-k insulating film formed on a first active region and contains an adjusting metal. The second MIS transistor includes a second gate insulating film which includes a second high-k insulating film formed on a second active region and is free of the adjusting metal. The dummy element includes a dummy gate insulating film which includes a dummy high-k insulating film formed on a dummy active region and at least a portion of which is free of the adjusting metal. The first active region is formed in a second conductivity type first well region. The second active region is formed in a first conductivity type second well region. The dummy active region is formed in a second conductivity type third well region. | 01-24-2013 |
20130056832 | SEMICONDUCTOR DEVICE - A first dual-gate electrode includes a gate electrode located on a first active region and having a first silicon film of a first conductivity type and a gate electrode located on a second active region and having a first silicon film of a second conductivity type. A second dual-gate electrode includes a gate electrode located on a third active region and having a second silicon film of the first conductivity type and a gate electrode located on a fourth active region and having a second silicon film of the second conductivity type. At least a portion of the first silicon film of the first conductivity type has a first-conductivity-type impurity concentration higher than that of a portion of the second silicon film of the first conductivity type located on the third active region. | 03-07-2013 |
20130140707 | SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME - A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features. | 06-06-2013 |
20140346610 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film which is formed on a first active region of a semiconductor substrate and has a first high dielectric constant film, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film which is formed on a second active region of the semiconductor substrate and has a second high dielectric constant film, and a second gate electrode formed on the second gate insulating film. The second high dielectric constant film contains first adjusting metal. The first high dielectric constant film has a higher nitrogen concentration than the second high dielectric constant film, and does not contain the first adjusting metal. | 11-27-2014 |
Patent application number | Description | Published |
20080248395 | Electrolyte-Electrode Joined Assembly and Method for Producing the Same - A solid electrolyte is formed, and then a paste for forming an intermediate layer is applied thereto by printing, etc. The paste contains a mixed powder of a ceria-based oxide powder and a sintering aid powder containing at least one of Al, Ca, Co, Cr, Cu, Fe, Mn, Ni, and Zn, preferably a nitrate salt thereof. It is preferred that the sintering aid content is 0.5 to 5 mol %, and the ratio of the mixed powder to the paste is 40% to 80% by weight. The paste is burned preferably at 800° C. to 1500° C., more preferably 1100° C. to 1350° C., to form the intermediate layer having a thickness of 0.5 to 3 μm. | 10-09-2008 |
20090047566 | FUEL CELL AND METHOD OF PRODUCING THE FUEL CELL - A fuel cell includes an electrolyte electrode assembly and separators. A first protection layer is formed on a surface of an anode of the electrolyte electrode assembly facing the separator for preventing the anode from being exposed to an exhaust gas. A second protection layer is formed on a surface of the separator facing the anode for preventing the separator from being exposed to the exhaust gas. The first protection layer and the second protection layer tightly contact each other in part so as to form a space as a fuel gas channel for supplying a fuel gas to the anode. Alternatively, a protection layer is formed on an end surface of the separator facing the anode for preventing the separator from being exposed to the exhaust gas. | 02-19-2009 |
20090195019 | AUTOMOTIVE VEHICLE BODY STRUCTURE - An automotive vehicle body structure including a dash panel separating an engine room from a passenger compartment, a front pillar extending vertically along each outboard edge of the dash panel and a wheel house portion connected between an outboard edge of the dash panel and an opposing side of a lower part of the front pillar, a reinforcing member extends along a boundary between the outboard edge of the dash panel and wheel house portion and defines a closed cross section jointly with the dash panel and wheel house. The wheel house portion has a three dimensional contour bulging toward the passenger compartment and relatively high rigidity to reinforce the dash panel by reinforcing the boundary between the wheel house portion and dash panel. The impact load applied to the dash panel during a frontal crash is evenly distributed to various structural parts and a favorable crash safety is achieved. | 08-06-2009 |
20100109370 | FRONT VEHICLE BODY STRUCTURE - Dashboard panel, partitioning between an engine compartment and a passenger compartment, includes a reinforcing frame structure or connection member that extends, through the interior space of the dashboard panel, to linearly interconnect a horizontal rear end portion of each of left and right front side frames and a front end portion of a corresponding one of left and right side sills. | 05-06-2010 |
20100109385 | VEHICULAR SIDE BODY STRUCTURE - Side sill includes a side sill body formed of a steel plate, and a side sill reinforcing member formed by extruding an aluminum alloy and provided inside the side sill body. Reinforcing bracket formed by casting an aluminum alloy covers the outer surface of the side sill body. The reinforcing bracket has protruding portions projecting, through through-holes formed in the side sill body, generally toward the interior of the side sill to be fixed to portions of the side sill reinforcing member, so that the side sill reinforcing member is restrainedly held by the reinforcing bracket. | 05-06-2010 |
20120299334 | STRUCTURE FOR SIDE SECTION OF VEHICLE BODY - A vehicle body side part structure having high strength against a load in a frontal collision and a load in a side collision. A side panel outer member ( | 11-29-2012 |
Patent application number | Description | Published |
20110199348 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a display device and a manufacturing method thereof with which driver cracks caused by a fall or the like can be suppressed. The display device according to the present invention includes: a display panel; a driver for driving the display panel; a substrate disposed on a display surface side of the display panel; and an adhesive layer for adhering the display panel and the substrate to each other. The driver is provided on an end portion of the display panel between the display panel and the substrate, and a resin member for absorbing an impact is provided between the driver and the substrate. | 08-18-2011 |
20120291846 | BACK CONTACT SOLAR CELL, WIRING SHEET, SOLAR CELL HAVING WIRING SHEET, SOLAR CELL MODULE AND PRODUCTION METHOD FOR SOLAR CELL HAVING WIRING SHEET - A back contact solar cell according to an embodiment of the invention includes an alignment mark ( | 11-22-2012 |
20130284260 | Back Electrode Type Solar Cell, Back Electrode Type Solar Cell With Interconnection Sheet, Solar Cell Module, Method of Manufacturing Back Electrode Type Solar Cell With Interconnection Sheet, and Method of Manufacturing Solar Cell Module - A back electrode type solar cell in which a no-electrode-formed region where no electrode is placed is provided in a part of a peripheral portion of a back surface of the back electrode type solar cell such that a line connecting end portions of a plurality of electrodes to one another includes a partially inwardly recessed region and the no-electrode-formed region is located adjacent to each of an electrode for n-type and an electrode for p-type adjacent to each other, a solar cell module, a method of manufacturing a back electrode type solar cell with interconnection sheet, and a method of manufacturing a solar cell module are provided. | 10-31-2013 |
20130298988 | SOLAR BATTERY AND METHOD OF MANUFACTURING SOLAR BATTERY - There is provided a solar battery, including: a solar cell including a porous electrode provided on at least one surface of a substrate; a conductive wire electrically connected to the porous electrode; and an adhesive material provided between the porous electrode and the conductive wire, wherein a part of the adhesive material penetrates into the porous electrode. There is also provided a method of manufacturing the solar battery. | 11-14-2013 |
20130306143 | METHOD FOR MANUFACTURING SOLAR CELL WITH INTERCONNECTION SHEET, METHOD FOR MANUFACTURING SOLAR CELL MODULE, SOLAR CELL WITH INTERCONNECTION SHEET, AND SOLAR CELL MODULE - Provided is a method for manufacturing a solar cell with an interconnection sheet, a method for manufacturing a solar cell module, a solar cell with an interconnection sheet, and a solar cell module. Fixing resin is arranged at least on one side of a location between electrodes of solar cell and a location between interconnections of an interconnection sheet. Thereafter, a first cure state of fixing resin is attained. Thereafter, an adjoining member containing conductive material is provided, and a solar cell and interconnection sheet are stacked to soften the fixing resin exhibiting the first cure state and then re-cure the same to attain a second cure state. | 11-21-2013 |