Patent application number | Description | Published |
20100014351 | SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS - An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states. | 01-21-2010 |
20100177579 | SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS - In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories. | 07-15-2010 |
20110122701 | SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS - An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states. | 05-26-2011 |
20110292727 | SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS - An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states. | 12-01-2011 |
20120127792 | SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS - In a nonvolatile memory apparatus, a system bus receives address, command, and/or control signals. Memory cells store bits of data by shifting a threshold voltage to one of plural ranges. In writing a first page, the threshold voltage of a first memory cell remains in a first range or shifts into a second range. In writing a second page, the threshold voltage remains in the first or second voltages, or shifts into a third range from the first range or into a fourth range from the second range. Before writing the second page, the memory reads data from the first memory cell for generating the second page writing data. A shifting direction of the threshold voltage from the first to the second range is the same as a shifting direction from the first to the third range. | 05-24-2012 |
20120213002 | SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS - In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories. | 08-23-2012 |
20140185380 | SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS - In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories. | 07-03-2014 |
Patent application number | Description | Published |
20100119969 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND DPOLYHYDROXYAMIDE RESIN - There is provided a positive photosensitive resin composition that is excellent in electric insulating properties, heat resistance, mechanical strength and electrical characteristics, and capable of forming a high-resolution circuit pattern. The positive photosensitive resin composition comprises at least one type of a polyhydroxyamide resin containing a repeating unit represented by Formula (1) and having a weight average molecular weight of 3,000 to 100,000, and a compound generating an acid by light irradiation. | 05-13-2010 |
20100130755 | PROCESS FOR PRODUCTION OF COUMARIN DIMER COMPOUND - There is provided a one-step process for producing a dihydroxy-substituted coumarin dimer compound by a photodimerization reaction of a hydroxy-substituted coumarin compound. The process comprises subjecting a hydroxy-substituted coumarin compound to a photodimerization reaction in a solvent selected from aliphatic ketones having 3 to 10 carbon atoms, aliphatic carboxylic acid esters having 2 to 10 carbon atoms, aliphatic alcohols having 1 to 10 carbon atoms, aliphatic nitriles having 2 to 10 carbon atoms, ethers having 4 to 10 carbon atoms, amides having 3 to 10 carbon atoms, and a mixture thereof to obtain a dihydroxy-substituted coumarin dimer compound. | 05-27-2010 |
Patent application number | Description | Published |
20090012318 | Cage-shaped cyclobutanoic dianhydrides and process for production thereof - A process which comprises reacting a 1,2,3,4-cyclobutanetetracarboxylic-1,2:3,4-dianhydride [1] with an alcohol [2] in the presence of an acid catalyst to obtain a compound [3], isomerizing the compound [3] with a base catalyst into a compound [4], reacting the compound [4] with an organic acid to obtain a compound [5], and reacting the compound [5] with a dehydrating agent to obtain a 1,2,3,4-cyclobutanetetracarboxylic-1,3:2,4-dianhydride: wherein R | 01-08-2009 |
20090182115 | POLYAMIC ACID AND POLYIMIDE - Disclosed are a polyamic acid containing not less than 10 mol % of a repeating unit represented by the formula [1] below, and a polyimide represented by the formula [2] below which is obtained from such a polyamic acid. The polyamic acid and polyimide have high heat resistance as shown by a thermal decomposition temperature of not less than 300° C. In addition, the polyamic acid and polyimide have good workability because of their high solubility in solvents, while exhibiting good light transmission. (In the formulae, R | 07-16-2009 |
20090292103 | POLYAMIC ACID AND POLYIMIDE - A polyamic acid comprising at least 10 mol % repeating units represented by the formula [1] or [2]; and a polyimide represented by the formula [3] or [4] which is obtained from the polyamic acid. A polyimide film having high heat resistance and satisfactory in light-transmitting properties and tensile strength is obtained from the polyamic acid. | 11-26-2009 |
20100063243 | POLYAMIC ACIDS, POLYIMIDES, AND PROCESSES FOR THE PRODUCTION THEREOF - To provide polyamic acids and polyimides, which have high light transmittance and heat resistance such that their thermal decomposition temperatures are at least 300° C. and which are excellent in their solubility in solvents and have their processability improved. | 03-11-2010 |
20110257361 | ALKYL BENZENE TETRACARBOXYLIC DIANHYDRIDE, MANUFACTURING METHOD THEREOF, POLYIMIDE, AND APPLICATION THEREOF - Disclosed is a 5-alkyl-1,2,3,4-benzene tetracarboxylic-1:2,3:4-dianhydride which is represented by the general formula (1) and has excellent solubility with respect to various organic solvents. Depending on the diamine that is used, a polyimide with excellent heat resistance or a polyimide with good workability at a low melting point can be provided, and in addition, a polyimide that exhibits excellent characteristics for electronic materials or the like can be provided. | 10-20-2011 |