Patent application number | Description | Published |
20100307404 | Method for manufacturing III metal nitride single crystal - It is used a substrate main body | 12-09-2010 |
20110274609 | Group 3B nitride crystal substrate - A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less. | 11-10-2011 |
20110287222 | Group 3B nitride crystal - A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided. | 11-24-2011 |
20120012984 | METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL - To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface. | 01-19-2012 |
20120175740 | BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTURING THE SAME - Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing. | 07-12-2012 |
20130221490 | METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL - To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface. | 08-29-2013 |
20140014028 | Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same - A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate | 01-16-2014 |
20140026809 | Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in Same - A seed crystal substrate | 01-30-2014 |
20140147953 | Method for Peeling Group 13 Element Nitride Film | 05-29-2014 |
20140158978 | Semiconductor Light-Emitting Element and Laminate Containing Same - A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer. | 06-12-2014 |
20140197420 | Films of Nitrides of Group 13 Elements and Layered Body Including the Same | 07-17-2014 |