Patent application number | Description | Published |
20130234158 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 09-12-2013 |
20130240904 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region. | 09-19-2013 |
20130248880 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, and a fourth semiconductor region, a control electrode, a floating electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench formed in the fourth, the third, and the second region. The floating electrode is provided between the control electrode and a bottom surface of the trench. The insulating film is provided between the trench and the control electrode, between the trench and the floating electrode, and between the control electrode and the floating electrode. | 09-26-2013 |
20130248881 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide. | 09-26-2013 |
20140034964 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region. | 02-06-2014 |
20140034965 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region. | 02-06-2014 |
20140034966 | TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region. | 02-06-2014 |
20140084303 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a structural body, an insulating film, and a control electrode. The structural body has a first surface, and includes a first semiconductor region including silicon carbide of a first conductivity type, a second semiconductor region including silicon carbide of a second conductivity type, and a third semiconductor region including silicon carbide of the first conductivity type. The structural body has a portion in which the first semiconductor region, the second semiconductor region, and the third semiconductor region are arranged in this order in a first direction along the first surface. The insulating film is provided on the first surface of the structural body. The control electrode is provided on the insulating film. The structural body has a buried region provided between the second semiconductor region and the first surface. The buried region is doped with a group V element. | 03-27-2014 |
20140084304 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a structure, an insulating film, a control electrode, first and second electrodes. The structure has a first surface, and includes a first, a second, and a third semiconductor region. The structure has a portion including the first, second, and third semiconductor regions arranged in a first direction along the first surface. The insulating film is provided on the first surface. The control electrode is provided on the insulating film. The first electrode is electrically connected to the third semiconductor region. The second electrode is electrically connected to the first semiconductor region. The insulating film includes a charge trap region. A bias voltage is applied to the first and second electrodes, and includes a shift voltage. The shift voltage shifts a reference potential of a voltage applied to the first and second electrodes by a certain voltage. | 03-27-2014 |
20140084359 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a first electrode, and a contact region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The first electrode has a first and a second portion. The first portion is provided in a first direction and has a lower end being positioned below a lower end of the third semiconductor region. The second portion is in contact with the first portion and is provided on the third semiconductor region. The contact region is provided between the first portion and the second semiconductor region and is electrically connected to the first electrode and the second semiconductor region. | 03-27-2014 |
20140147997 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 05-29-2014 |
20140183177 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a first electrode and a heat generation portion. The first semiconductor region includes n-type silicon carbide. The second semiconductor region is provided on a portion of the first semiconductor region. The second semiconductor region includes p-type silicon carbide. The first electrode provided on the first semiconductor region and the second semiconductor region. The heat generation portion is provided on the second semiconductor region. | 07-03-2014 |
20140209927 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR SUBSTRATE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element. | 07-31-2014 |
20140252378 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor substrate includes a substrate and a semiconductor layer. The substrate has a first surface and containing a silicon carbide. The semiconductor layer is provided on the first surface. The semiconductor layer has a thickness of H centimeters in a perpendicular direction to the first surface. The semiconductor layer contains an epitaxially grown silicon carbide with an off angle θ provided relative to a (0001) face of the substrate. The semiconductor layer includes k pieces of basal plane dislocation per one square centimeter viewed in the perpendicular direction. When S=(½)×H | 09-11-2014 |
20140286063 | RECTIFIER AND METHOD FOR CONTROLLING THE SAME - According to one embodiment, a rectifier includes a rectifying device, a control element and a controller. The control element is serially connected to the rectifying device. The control element has a resistance value that changes according to a control signal. The controller generates the control signal according to a change in a current flowing in the rectifying device. | 09-25-2014 |
20150076523 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region. | 03-19-2015 |
20150087124 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide. | 03-26-2015 |