Takashi Otsuka
Takashi Otsuka, Osaka JP
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20080261112 | ELECTRODE MATERIAL FOR ELECTROCHEMCIAL DEVICE, METHOD FOR PRODUCING THE SAME, ELECTRODE USING THE ELECTRODE MATERIAL, AND ELECTROCHEMICAL DEVICE USING THE ELECTRODE MATERIAL - An electrode material of the present invention includes a plurality of particles capable of absorbing and desorbing lithium, and a plurality of nanowires capable of absorbing and desorbing lithium. The particles and the nanowires include silicon atoms. The plurality of nanowires are entangled with each other to form a network, and the network is in contact with at least two of the plurality of particles. | 10-23-2008 |
20100173098 | METHOD FOR PRODUCING ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A method for producing an electrode for a non-aqueous electrolyte secondary battery, the method comprising the steps of (a) generating a thermal plasma, (b) supplying a raw material of active material into the thermal plasma, and (c) depositing particles produced in the thermal plasma on a surface of a current collector to give an active material layer. | 07-08-2010 |
20100320080 | Electrode for Electrochemical Element and Electrochemical Element using the Electrode - An electrode for an electrochemical element reversibly absorbing and releasing lithium ions including: a current collector having a higher first convex portion and a lower second convex portion on at least one surface thereof; a columnar body including an active material formed in such a manner as to rise obliquely on the first convex portion and the second convex portion of the current collector. | 12-23-2010 |
20110053044 | PROTON-CONDUCTING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6. | 03-03-2011 |
20110305963 | PROTON-CONDUCTING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6. | 12-15-2011 |
20130071766 | PROTON-CONDUCTING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6. | 03-21-2013 |
Takashi Otsuka, Tochigi JP
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20100116777 | SYNTHETIC RESIN BOTTLE AND PROCESS FOR MOLDING THE SAME - A technical problem is to fully make up for a restricted upper limit to the preform body wall thickness. An object is to provide a bottle which is narrow-mouthed and yet has a substantially expanded body. The molding process comprises steps of: (1) injection molding a preform in the shape of a test tube taller than the bottle wherein the preform has a cylindrical mouth opening portion disposed in an upper part of the preform, and wherein the mouth opening portion of the preform serves also as a mouth opening portion of the bottle product; (2) thermally shrinking the preform from an initial height so that portions other than the mouth opening portion of the preform would have a height that is smaller than that of the bottle; and (3) setting this thermally shrunk preform in a blow mold and biaxially drawing and blow molding the preform into the bottle. | 05-13-2010 |
Takashi Otsuka, Saitama JP
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20090289759 | Keyless Device of Vehicle - A keyless device of a vehicle sets to change a search area “A” of a vehicle exterior antenna | 11-26-2009 |
20120280050 | TEMPERATURE REGULATING DEVICE OF ON-VEHICLE BATTERY AND ITS TEMPERATURE REGULATING METHOD - A temperature regulating device of an on-vehicle battery includes a battery | 11-08-2012 |
Takashi Otsuka, Shizuoka JP
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20080271676 | PLASMA TREATMENT METHOD AND PLASMA TREATMENT APPARATUS - In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances. | 11-06-2008 |
Takashi Otsuka, Kanagawa JP
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20080238561 | PIEZOELECTRIC OSCILLATOR - For a piezoelectric oscillator according to the present invention, an oscillator circuit includes: a piezoelectric vibrator; an NMOS transistor and a PMOS transistor that constitute an amplifier connected in parallel to the piezoelectric vibrator; and load capacitors connected in parallel to the piezoelectric vibrator. The gate terminals of the NMOS transistor and the PMOS transistor, which are constituents of the amplifier, are connected by a DC cut capacitor, and the gate terminal of the NMOS transistor and the output terminal of the amplifier are connected by a feedback resistor. An arbitrary bias voltage, to be applied to the gate terminal of the PMOS transistor via a high-frequency elimination resistor, is generated by a circuit provided by a diode-connected, second PMOS transistor. | 10-02-2008 |
Takashi Otsuka, Saitama-Shi JP
Takashi Otsuka, Mouka-Shi JP
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20130228545 | SYNTHETIC RESIN BOTTLE - A technical problem is to fully make up for a restricted upper limit to the preform body wall thickness. An object is to provide a bottle which is narrow-mouthed and yet has a substantially expanded body. In principle, the bottle may include a mouth opening portion with a bore diameter of 10 mm or less and a maximum diameter of the body is 2.5 times or more than the bore diameter of the mouth opening portion, and wherein a maximum diameter portion of the body has a minimum wall thickness of 0.45 mm or more. | 09-05-2013 |
Takashi Otsuka, Saitama-Shi, Saitama JP
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20160043451 | TEMPERATURE ADJUSTMENT DEVICE - A temperature adjustment device includes a cooling member and a connecting member. The cooling member consists of a first plate and a second plate. The first plate is thermally abutted against a heat-generating member. The second plate is stacked on a lower surface of the first plate to define a cooling space with the first plate, the cooling space a cooling medium flows through, and being configured to include an inlet and an outlet of the cooling medium on a bottom surface facing against the first plate. The connecting member is the connecting member to a temperature adjustment circuit, and that is configured with a tube member having a flat part. The connecting member includes a connecting port connected to the inlet or the outlet on the flat part, and that is laminated and arranged on the second plate such that the flat part is abutted against the second plate. | 02-11-2016 |
Takashi Otsuka, Hyogo-Ken JP
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20160054956 | COMPUTER-READABLE RECORDING MEDIUM, CONFIGURATION PRESENTATION METHOD, AND CONFIGURATION PRESENTATION DEVICE - A non-transitory computer-readable recording medium having recorded thereon a printer driver allowing a computer including a nonvolatile memory to issue a print instruction causing a printing device to execute printing. The printer driver causes the computer to execute: displaying separate reception regions each corresponding to a different printing device and each including one or more configurable items that are related to printing and variable from reception region to reception region; when receiving a configuration with respect to a configurable item included in a reception region, storing the configuration to the nonvolatile memory to be is associated with a printing device corresponding to the reception region; and when receiving a designation of a printing device corresponding to a reception region, reading out each configuration associated with the printing device from the nonvolatile memory, and presenting the each configuration so as to be usable in issuing a print instruction. | 02-25-2016 |