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| 20090069113 | Golf club head - A golf club head having a hollow structure comprising a head main body provided with a top opening and a crown plate fitted in the top opening is disclosed. The head main body is provided with a support for the crown plate extending along the edge of the top opening and protruding into the top opening with a variable width from the edge of the top opening. the average Wa of the width of the crown plate support existing in the foreside one-quarter zone of the top opening, the average Wc of the width of the crown plate support existing in the backside one-quarter zone of the top opening, and the average Wb of the width of the crown plate support existing in the mid two-quarter zone of the top opening satisfy (1) Wa>Wb, and (2) Wc>Wb. | 03-12-2009 |
| 20090137339 | GOLF CLUB HEAD - A golf club head comprises a head main body made of a metal material and having a club face for striking a ball, and a vibration absorber made of a viscoelastic material and attached to the head main body. The vibration absorber is provided with a cut having a width of not more than 1.0 mm. Preferably, the cut is substantially parallel with the club face, and the surface at which the cut is opened, comes into contact with the head main body. | 05-28-2009 |
| 20090247313 | GOLF CLUB SET | 10-01-2009 |
| 20100056296 | GOLF CLUB HEAD - A head of a first aspect is provided with a head body h | 03-04-2010 |
| 20100287760 | MANUFACTURING METHOD OF GOLF CLUB HEAD - A manufacturing method of the present invention includes the steps of: preparing a pre-line forming member having no face line; and cutting the pre-line forming member using a cutter | 11-18-2010 |
| 20100323816 | IRON-TYPE GOLF CLUB HEAD - An iron-type golf club head is assembled from a front component ( | 12-23-2010 |
| 20110028235 | GOLF CLUB HEAD - A golf club head having a good feel of hitting a ball, comprising a head body | 02-03-2011 |
| 20120071270 | IRON TYPE GOLF CLUB HEAD - An iron type golf club head | 03-22-2012 |
| 20120295730 | GOLF CLUB - A golf club | 11-22-2012 |
| 20120295734 | GOLF CLUB SHAFT - In a shaft | 11-22-2012 |
| 20120309558 | GOLF CLUB SHAFT | 12-06-2012 |
| 20130095949 | GOLF CLUB SHAFT AND GOLF CLUB USING THE SAME - A golf club shaft extending from a tip end to a butt end and made of fiber reinforced resin, comprises a weight being in a range of from 30 to 55 g, a whole length LS between the tip end and the butt end, a center of gravity of the shaft located with a distance LG from the tip end, a ratio of the distance LG to the whole length LS being in a range of from 0.54 to 0.65, a tip end portion which has a length of 300 mm from the tip end toward the butt end, the tip end portion including fibers including a pitch based carbon fiber and a PAN based carbon fiber, and said fibers in the tip end portion comprising, in weight, the pitch based carbon fiber of from 15 to 25% and the PAN based carbon fiber of from 85 to 75%. | 04-18-2013 |
| 20130095950 | GOLF CLUB SHAFT AND GOLF CLUB USING THE SAME - A golf club shaft extending from a tip end to a butt end and made of fiber reinforced resin, comprises a weight being in a range of from 30 to 55 g, a whole length LS between the tip end and the butt end, a center of gravity of the shaft located with a distance LG from the tip end, a ratio of the distance LG to the whole length LS being in a range of from 0.54 to 0.65, a butt end portion which has a length of 300 mm from the butt end toward the tip end, the butt end portion including fibers including a low elastic fiber having an elastic modulus in a range of from 5 to 20 t/mm | 04-18-2013 |
| 20150353473 | NOVEL ANTICANCER AGENT - The present invention aims to provide a compound having an anticancer action comparable or superior to that of naftopidil. | 12-10-2015 |
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| 20100101090 | Method of Making a Composite Component and Apparatus - A method of making a composite component and the composite component is disclosed. The composite component can comprise multiple portions with different materials. By configuring the composite component with different materials, the weight of the composite component can be reduced while maintaining the strength and support of the composite component for a cockpit assembly. Furthermore, the method provides for an increase in the efficiency of the die casting process used to create the composite component. | 04-29-2010 |
| 20100320712 | Tower Bar Construction for a Motor Vehicle - A tower bar construction for a motor vehicle is disclosed. The tower bar construction includes a member extending from strut tower to strut tower. This component resists relative movement between strut towers. The construction also includes two continuous sections from each strut tower to an upper panel. These sections resist relative movement between strut towers and the upper panel. The tower bar construction includes a central reinforcing portion welded to an upper panel that resists torsion exerted on the section created by relative movement between strut towers and the upper panel. | 12-23-2010 |
| 20100327627 | LIGHT WEIGHT VERTICAL SUPPORT MEMBER IN INSTRUMENT PANEL FRAME - A support structure for a vehicle instrument panel frame may be made by: extruding a part having a cross-section that is closed and hollow along a portion of its length; and, forming the part to alter the shape of the cross-section at one or more points along the longitudinal axis of the part. | 12-30-2010 |
| 20130313851 | Method of Making a Composite Component and Apparatus - A method of making a composite component and the composite component is disclosed. The composite component can comprise multiple portions with different materials. By configuring the composite component with different materials, the weight of the composite component can be reduced while maintaining the strength and support of the composite component for a cockpit assembly. Furthermore, the method provides for an increase in the efficiency of the die casting process used to create the composite component. | 11-28-2013 |
| 20140265450 | VEHICLE FRAME STRUCTURE - A vehicle body structure includes a floor connected to a main frame assembly. The main frame assembly includes first and second side rails and interconnecting cross-members. A front frame structure located near a forward part of the vehicle body structure is connected to the main frame assembly. The front frame structure includes first and second diagonal members and a laterally extending member. Each of the first and second diagonal members includes a forward end portion connected to the main frame assembly and a rearward end portion connected to the lateral member. The rearward end portions converge toward one another and the lateral member is connected to the first and second side rails. The front frame structure transfers an impact load caused by a narrow offset frontal collision from the first side rail to the second side rail by transferring the load through the front frame structure. | 09-18-2014 |
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| 20100271464 | APPARATUS AND METHOD FOR PROCESSING IMAGE - Provided are an apparatus, a method, and a program for processing an image which reduces crosstalk and achieves high image quality. The method includes obtaining a differential signal by subtracting one input image signal of an object to be processed from another input image signal; applying a predetermined correction coefficient to the differential signal; determining, for each pixel, whether the differential signal is a negative value; selectively outputting, for each pixel, the differential signal, to which the predetermined correction coefficient is applied, as a correction signal based on a result of the determining; and correcting, for each pixel, the one input image signal based on the one input image signal and the correction signal that is selectively output if the differential signal is the negative value. | 10-28-2010 |
| 20120069626 | SEMICONDUCTOR MEMORY DEVICE - The invention provides a semiconductor memory device including a variable resistance element capable of decreasing a variation of a resistance value of stored data due to a large number of times of switching operations and capable of performing a stable writing operation. The device has a circuit that applies a reforming voltage pulse to a memory cell including a variable resistance element of a degraded switching characteristic and a small read margin due to a large number of times of application of a write voltage pulse, to return each resistance state of the variable resistance element to an initial resistance state. By applying the reforming voltage pulse, the variable resistance element can recover at least one resistance state from a variation from the initial resistance state, and can recover the switching characteristic. Accordingly, there is obtained a semiconductor memory device in which a reduction of a read margin is suppressed. | 03-22-2012 |
| 20130193396 | VARIABLE RESISTIVE ELEMENT, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A variable resistive element that performs a forming action at small current and a stable switching operation at low voltage and small current, and a low-power consumption large-capacity non-volatile semiconductor memory device including the element are realized. The element includes a variable resistor between first and second electrodes. The variable resistor includes at least two layers, which are a resistance change layer and high-oxygen layer, made of metal oxide or metal oxynitride. The high-oxygen layer is inserted between the first electrode having a work function smaller than the second electrode and the resistance change layer. The oxygen concentration of the metal oxide of the high-oxygen layer is adjusted such that the ratio of the oxygen composition ratio to the metal element to stoichiometric composition becomes larger than the ratio of the oxygen composition ratio to the metal element of the metal oxide forming the resistance change layer to stoichiometric composition. | 08-01-2013 |
| 20130248809 | VARIABLE RESISTIVE ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - As for a variable resistive element including first and second electrodes, and a variable resistor containing a metal oxide between the first and second electrodes, in a case where a current path having a locally high current density of a current flowing between the both electrodes is formed in the metal oxide, and resistivity of at least one specific electrode having higher resistivity of the both electrodes is 100 μΩcm or more, a dimension of a contact region of the specific electrode with the variable resistor in a short side or short axis direction is set to be more than 1.4 times as long as a film thickness of the specific electrode, which reduces variation in parasitic resistance generated in an electrode part due to process variation of the electrode, and prevents variation in resistance change characteristics of the variable resistive element generated due to the variation in parasitic resistance. | 09-26-2013 |
| 20140036573 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array having a plurality of memory cells arranged in a matrix, each memory cell being configured such that a variable resistance element and a selection transistor are connected in series. A set operation for a memory cell (an operation of converting the resistance of the variable resistance element to a low resistance) is performed by applying a set voltage pulse for a longer time than that for a reset operation (an operation of converting the resistance of the variable resistance element to a high resistance) while limiting, using the selection transistor, an electric current flowing in the set operation to a certain low electric current, and by simultaneously applying the set voltage pulse to the plurality of memory cells. | 02-06-2014 |
| 20140085964 | SEMICONDUCTOR STORAGE DEVICE - A control circuit controls memory operations such that, in a first rewriting operation in which a resistance state of a variable resistance element is changed from a first state to a second state, a first voltage pulse is applied to both terminals of a memory cell while limiting the amount of current flowing through the variable resistance element to a value smaller than or equal to a certain small amount of current, in a second rewriting operation in which the resistance state of the variable resistance element is changed from the second state to the first state, a second voltage pulse is applied to both terminals of the memory cell, and, in a reading operation in which the resistance state stored in the variable resistance element is read, a third voltage pulse is applied to both terminals of the memory cell. | 03-27-2014 |
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| 20100207426 | STRUCTURE FOR SIDE PORTION OF VEHICLE BODY - Provided is a side part structure of a vehicle body capable of reliably dispersing a collision load applied from the side of a vehicle. A bulkhead ( | 08-19-2010 |
| 20110175399 | STRUCTURE FOR SIDE PORTION OF VEHICLE BODY - An object of the invention is to provide a structure for a side portion of a vehicle body, in which deformation of a hollow cross-section shape of a side sill, which is caused by a side collision load inputted to a vehicle body, can be suppressed without causing a significant increase in the weight of the vehicle body. In the invention, when a side collision load is inputted to a center pillar | 07-21-2011 |
| 20140084531 | SHEET CONVEYING DEVICE AND IMAGE FORMING APPARATUS - A sheet conveying device includes: a separation sheet feeding mechanism having a paper feeding belt and a separation roller; and an adjustment mechanism that changes contact state of the paper feeding belt to the separation roller by changing relative position of the paper feeding belt and the separation roller, and changes and adjusts separation performance of the separation roller for the subsequent sheet, wherein the adjustment mechanism includes a cam follower member changing the relative position of the feeding belt and the separation roller, the cam member includes a first cam face and a second cam face which are formed at each rotation radius position in accordance with the rotation angle position, and are spaced apart in the rotation radius direction, and the cam follower member has a contact unit guided by the first cam face and the second cam face. | 03-27-2014 |
| 20150048566 | SHEET MATERIAL CONVEYING DEVICE, IMAGE SCANNING DEVICE, AND IMAGE FORMING APPARATUS - A sheet material conveying device includes: a sheet material housing unit; a sheet material conveying unit that conveys each sheet material to a predetermined conveyance target position; a separating/feeding unit that separates a sheet material from sheet materials in the sheet material housing unit and conveys the separated sheet material alone to the sheet material conveying unit; a multi-feed detecting unit that detects whether multi-feed occurs in which a plurality of sheet materials are fed from the separating/feeding unit to the sheet material conveying unit; and an internal sheet material detecting unit that detects presence of the sheet material in the sheet material conveying unit. The sheet material conveying device performs multi-feed failure detection control for detecting whether a failure occurs in the multi-feed detecting unit before notification of a detection result of the internal sheet material detecting unit. | 02-19-2015 |
| 20150145199 | PAPER FEEDING DEVICE AND IMAGE FORMING APPARATUS - A paper feeding device that includes, in a drive transmission mechanism to a paper feeding roller that delivers paper, a drive member provided on an apparatus body side as a member to transmit torque in a given direction for delivery of paper from a conveying motor to the paper feeding roller and a driven member provided on the paper feeding roller side. By relatively rotating the drive member and the driven member to form a coupling state of the members before an instruction to start the delivery of paper is output, the rotation of the paper feeding roller is started without a time lag when the instruction to start the delivery of paper is output. | 05-28-2015 |
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| 20080230834 | Semiconductor apparatus having lateral type MIS transistor - A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor. | 09-25-2008 |
| 20080293202 | Method for manufacturing semiconductor device - A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode. | 11-27-2008 |
| 20100102857 | Switching circuit and driving circuit for transistor - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 04-29-2010 |
| 20100176480 | Semiconductor device, method for manufacturing the same, and multilayer substrate having the same - A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit. | 07-15-2010 |
| 20100177829 | Receiving device including impedance control circuit and semiconductor device including impedance control circuit - A receiving device includes a receiving circuit and an impedance control circuit. The receiving circuit receives a signal transmitted through a communication line. The impedance control circuit is coupled with the receiving circuit and has a detecting part. The detecting part detects a physical value of the signal and the physical value includes at least one of a voltage, an electric current, and an electric power. The impedance control circuit changes an input impedance based on the detected value so that a ringing of the signal is reduced. | 07-15-2010 |
| 20110210766 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 09-01-2011 |
| 20120182051 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 07-19-2012 |
| 20140131798 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate including a first semiconductor layer on the semiconductor substrate; multiple semiconductor elements in the semiconductor substrate; and an ineffective region. Each semiconductor element includes: a second semiconductor layer in a surface portion of the first semiconductor layer; a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced a part from the second semiconductor layer; and a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer. The ineffective region is disposed in the semiconductor substrate between at least two adjacent semiconductor elements; and does not provide a function of the semiconductor elements. | 05-15-2014 |
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| 20090016205 | Optical Recording Medium and Method for Reproducing Information From Optical Recording Medium - An optical recording medium includes a substrate, a first dielectric layer, a recording layer, a second dielectric layer, a super-resolution layer, and a third dielectric layer, which are provided in that order. The super-resolution layer is formed of a material configured such that voids are generated when the material is irradiated with DC light at a predetermined irradiation power for 1 to 300 seconds. Therefore, super-resolution reproduction can be made such that the irradiation power of a readout laser beam does not depend on the size of a recording mark. | 01-15-2009 |
| 20100091639 | OPTICAL RECORDING MEDIUM FOR PERFORMING SUPER RESOLUTION REPRODUCTION AND OPTICAL RECORDING AND REPRODUCTION METHOD THEREOF - The invention performs super resolution reproduction with a recording layer and a signal reproducing functional layer laminated on a grooved substrate. A length of a mark recorded in a Mark Position method is only one length that is less than the resolution limit in an optical system to be used, and recording marks are formed both on a land and in a groove of the grooved substrate. | 04-15-2010 |
| 20100142362 | HIGH DENSITY OPTICAL DISK AND REPRODUCTION/TRACKING CONTROL METHOD - When a method for increasing density by providing a tracking guide such as a land/groove and introducing a plurality of strings of super-resolution pits into one track thereof is applied to a reproduction-dedicated optical disk, there are problems in that the production cost is increased, the structure is complicated, and the space which can be used for a recording pits is narrowed because of the land/groove structure. | 06-10-2010 |
| 20100167015 | ETCHING RESIST - An etching resist containing a metallic oxynitride. The etching resist of the present invention can be suitably used, for example, in the production of a molded article for surface-working an optical member such as a microlens sheet, a light diffusing sheet, a non-reflective sheet, a sheet for encapsulating photosemiconductor elements, an optical waveguide, an optical disk, or a photosensor. | 07-01-2010 |
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| 20100080038 | SEMICONDUCTOR MEMORY DEVICE - An inexpensive nonvolatile memory having high performance which makes random write and readout possible an unlimited number of times is provided. A unit memory cell is formed of a MISFET having a channel body that is electrically isolated from a semiconductor substrate and a resistance change element having a two-terminal structure with one end electrically connected to a drain of the MISFET. The MISFET functions as a volatile memory element, and the resistance change element functions as a nonvolatile memory element, so that information stored in the MISFET is copied to the resistance change element before the power is turned OFF and information stored in the resistance change element is transferred to the MISFET when the power is turned ON, and thus, the MISFET is used as a volatile memory which makes random write and readout possible. | 04-01-2010 |
| 20120319071 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a variable resistive element that can perform a stable switching operation at low voltage and low current, and also provides a low-power consumption large-capacity non-volatile semiconductor memory device including the variable resistive element. The non-volatile semiconductor memory device is a device using a variable resistive element, which includes a variable resistor between a first electrode and a second electrode, for storing information, wherein an oxygen concentration of a hafnium oxide (HfO | 12-20-2012 |
| 20150036217 | OPTICAL FILTER - An optical filter configured to transmit light of a predetermined wavelength includes a substrate; a first conductive thin film that is disposed on the substrate and has apertures extending through the first conductive thin film and arranged with a period of less than the predetermined wavelength; and a second conductive thin film at least a portion of which faces the apertures so as to be separated from the apertures. | 02-05-2015 |
| 20150301236 | OPTICAL FILTER - An object is to improve wavelength selectivity of an optical filter which selects a wavelength of incident light. Accordingly, an optical filter is the filter that selects a wavelength of incident light and includes a multilayer film which includes three or more thin metal films by alternately laminating each thin metal film and a dielectric film, and apertures which pass through the multilayer film, and are arranged with a period of less than the wavelength of the incident light. | 10-22-2015 |
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| 20100022327 | GOLF CLUB HEAD | 01-28-2010 |
| 20130095943 | GOLF CLUB - Provided is a golf club having a head disposed at a front end of a shaft and a grip disposed at a back end of the shaft. A club weight is not smaller than 290 g, and a ratio (head weight/club weight) of a head weight to a club weight is not lower than 0.67 but not higher than 0.72. When a distance from the front end of the shaft to a center of gravity of the shaft is L | 04-18-2013 |
| 20130095944 | WOOD-TYPE GOLF CLUB - Provided is a golf club having a head disposed at a front end of a shaft and a grip disposed at a back end of the shaft. A club weight is not larger than 290 g. A product of a ratio (head weight/club weight) of a head weight to the club weight, and a ratio (L | 04-18-2013 |
| 20130095945 | GOLF CLUB - Provided is a golf club having a head disposed at a front end of a shaft and a grip disposed at a back end of the shaft. A club weight is not larger than 265 g, and a ratio (head weight/club weight) of a head weight to a club weight is not lower than 0.67 but not higher than 0.75. When a distance from the front end of the shaft to a center of gravity of the shaft is L | 04-18-2013 |
| 20130095946 | GOLF CLUB - Provided is a golf club having a head disposed at a front end of a shaft and a grip disposed at a back end of the shaft. A club weight is not larger than 290 g, and a ratio (head weight/club weight) of a head weight to a club weight is not lower than 0.67 but not higher than 0.72. When an inertia moment of the club at a grip end is MI, 2700 kg·cm | 04-18-2013 |
| 20130095948 | GOLF CLUB SHAFT - When a distance from a shaft front end to a shaft gravity center point is L | 04-18-2013 |
| 20130095951 | GOLF CLUB - Provided is a golf club having a head disposed at a front end of a shaft and a grip disposed at a back end of the shaft. A club weight is not larger than 290 g, and a ratio (head weight/club weight) of a head weight to a club weight is not lower than 0.67 but not higher than 0.72. Furthermore, a grip weight is not smaller than 27 g but not larger than 45 g, and when a distance from the front end of the shaft to a center of gravity the shaft is L | 04-18-2013 |
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| 20090096568 | VARIABLE RESISTANCE ELEMENT, AND ITS MANUFACTURING METHOD - Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art. | 04-16-2009 |
| 20090200640 | VARIABLE RESISTIVE ELEMENT, AND ITS MANUFACTURING METHOD - A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element. | 08-13-2009 |
| 20140027703 | VARIABLE RESISTIVE ELEMENT, AND ITS MANUFACTURING METHOD - A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element. | 01-30-2014 |
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| 20130037103 | BACK SHEET FOR SOLAR CELL MODULE AND SOLAR CELL MODULE - To provide a back sheet for a solar cell module, which is light in weight and excellent in productivity, wherein a coating film formed from a coating composition containing a fluorinated copolymer (A), which is formed on at least one side of a substrate sheet, is excellent in adhesion to the substrate and free from a problem of cracking, fracturing, whitening or peeling. A back sheet for a solar cell module, comprising a substrate sheet and, as formed on at least one side of the substrate sheet, a coating film formed from a coating composition containing a fluorinated copolymer (A); and a solar cell module using such a back sheet. | 02-14-2013 |
| 20130040148 | COATING COMPOSITION FOR COATING SURFACE OF SOLAR HEAT-COLLECTING REFLECTIVE PLATE, AND SOLAR HEAT-COLLECTING REFLECTIVE PLATE, AS WELL AS PROCESSES FOR THEIR PRODUCTION - To provide a coating composition capable of forming a coating film having excellent functions on the surface of a solar heat-collecting reflective plate, and a solar heat-collecting reflective plate obtainable by such a composition, as well as processes for their production. A coating composition for coating the surface of a solar heat-collecting reflective plate, which comprises a fluorinated copolymer having repeating units derived from ethylene and repeating units derived from tetrafluoroethylene, and a solvent capable of dissolving the fluorinated copolymer at a temperature of not higher than the melting point of the fluorinated copolymer; a solar heat-collecting reflective plate obtainable by such a composition; and processes for producing such a composition and a reflective plate. | 02-14-2013 |
| 20130046062 | METHOD FOR REACTING - Provided is a method for efficiently and homogeneously reacting an ETFE having a functional group and a compound having a reactive functional group which can react with the functional group. A method for reacting an ethylene/tetrafluoroethylene copolymer having a functional group, which comprises reacting, in the presence of a solvent which can dissolve the ethylene/tetrafluoroethylene copolymer having a functional group, the ethylene/tetrafluoroethylene copolymer having a functional group and a compound (A) having a reactive functional group which can react with the functional group, in a dissolved state. | 02-21-2013 |
