Patent application number | Description | Published |
20080279245 | VCSEL, OPTICAL DEVICE, LIGHT IRRADIATION DEVICE, DATA PROCESSING DEVICE, LIGHT SOURCE, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND OPTICAL TRANSMISSION SYSTEM - A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region. | 11-13-2008 |
20090201963 | VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, FREE SPACE OPTICAL COMMUNICATION DEVICE, OPTICAL TRANSMISSION SYSTEM, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM - Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror. | 08-13-2009 |
20090201965 | VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM - Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror. | 08-13-2009 |
20100111125 | VERTICAL-CAVITY SURFACE-EMITTING LASER DIODE (VCSEL), METHOD FOR FABRICATING VCSEL, AND OPTICAL TRANSMISSION APPARATUS - Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region. | 05-06-2010 |
20110170568 | SURFACE EMITTING SEMICONDUCTOR LASER - A surface emitting semiconductor laser includes a substrate, an n-type lower DBR, an n-type cavity extending region formed on the lower DBR, an active region formed on the cavity extending region, and an upper DBR formed on the active region. A difference in refractive index between a relatively high refractive index layer and a relatively low refractive in the upper DBR is smaller than that in the lower DBR. | 07-14-2011 |
20110182316 | SURFACE EMITTING SEMICONDUCTOR LASER - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength. | 07-28-2011 |
20110222569 | SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION METHOD OF SEMICONDUCTOR LASER - A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector. An oxidized region formed by oxidizing a part of the intermediate semiconductor layer and an un-oxidized region contacting with the oxidized region are formed in the intermediate semiconductor layer, the un-oxidized region is electrically connected to the first or second semiconductor multilayer reflector, and a beam generated in the active region is reflected at a boundary between the oxidized region and the un-oxidized region to a direction parallel to a principal surface of the substrate, and is emitted from a side surface of the intermediate semiconductor layer. | 09-15-2011 |
20110235078 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER READABLE MEDIUM STORING PROGRAM - An image processing apparatus includes a reconfigurable processing unit that performs first image processing on first image data and that performs second image processing on second image data after completing the first image processing on the first image data, and a controller that controls the reconfigurable processing unit. The controller controls the reconfigurable processing unit so that preprocessing for performing the second image processing is performed in parallel with a processing operation on the first image data, the processing operation including the first image processing. | 09-29-2011 |
20110317540 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL-CAVITY-SURFACE-EMITTING-LASER DEVICE, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser including a substrate, a first semiconductor multilayer film reflector formed on the substrate, an active region formed on the first semiconductor multilayer film reflector, a second semiconductor multilayer film reflector formed on the active region, an electrode formed on the second semiconductor multilayer film reflector, a light absorption layer, and a light transmission layer. In the electrode, a light emitting aperture is formed. The light absorption layer is formed in a peripheral region of the light emitting aperture, and absorbs emitted light. The light transmission layer is composed of a material which the emitted light can pass through, and formed in a central region of the light emitting aperture. Thicknesses of the light absorption layer and the light transmission layer are selected so that phases of light from the light absorption layer and from the light transmission layer are adjusted. | 12-29-2011 |
20110318020 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL-CAVITY-SURFACE-EMITTING-LASER DEVICE, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser includes a substrate, a first semiconductor multilayer film reflector formed on the substrate, an active region formed on the first semiconductor multilayer film reflector, a second semiconductor multilayer film reflector formed on the active region, an electrode which is formed on the second semiconductor multilayer film reflector and in which a light emitting aperture is formed, a first substance that is composed of a material and that is formed in the light emitting aperture, and a second substance that is composed of a dielectric and that is formed on the first substance to cover one portion of the first substance. Light having an emission wavelength can pass through the material and dielectric. A reflectivity of a portion covered with the second substance is higher than a reflectivity of a portion that is not covered with the second substance. | 12-29-2011 |
20120147727 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL-CAVITY-SURFACE-EMITTING-LASER DEVICE, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser includes a semiconductor substrate, a first semiconductor multilayer film reflector of a first conductivity type laminated on the semiconductor substrate, a resonator, and a second semiconductor multilayer film reflector of a second conductivity type laminated on the resonator. In each of the first and second semiconductor multilayer film reflectors, a pair of a high-refractive-index layer and a low-refractive-index layer is stacked. The resonator includes an active layer laminated on the first semiconductor multilayer film reflector. The resonator includes a pair of spacer layers and a resonator extending region. A composition of at least a layer included in the resonator extending region is different from any of compositions of the semiconductor substrate, the first semiconductor multilayer film reflector, and the second semiconductor multilayer film reflector. | 06-14-2012 |
20130020592 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE ARRAY, OPTICAL RECORDING HEAD, IMAGE FORMING APPARATUS, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - Provided is a light-emitting device including a semiconductor substrate of a first conductivity type, a semiconductor multilayer reflection mirror of the first conductivity type, formed on the semiconductor substrate, a first semiconductor layer of the first conductivity type, formed on the semiconductor multilayer reflection mirror, a second semiconductor layer of a second conductivity type, formed on the first semiconductor layer, a third semiconductor layer of the first conductivity type, formed on the second semiconductor layer, a fourth semiconductor layer of the second conductivity type, formed on the third semiconductor layer, a first electrode formed on a rear surface of the semiconductor substrate, and a second electrode formed on the fourth semiconductor layer, wherein the semiconductor multilayer reflection mirror includes a first selectively oxidized region and a first conductive region adjacent to the first oxidized region, and the first conductive region electrically connects the semiconductor substrate and the first semiconductor layer. | 01-24-2013 |
20130083304 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER APPARATUS, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect. | 04-04-2013 |
20130188659 | SURFACE EMITTING SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMITTER, AND INFORMATION PROCESSOR - A surface emitting semiconductor laser includes a substrate; a first semiconductor distributed bragg reflector of a first conductive type; an active region; a second semiconductor distributed bragg reflector of a second conductive type; a current confinement layer that confines current in the active region; an optical confinement layer that confines light in the active region; and an optical loss unit including center and periphery portions in a predetermined direction, and gives a larger optical loss to the periphery portion than that of the center portion. Also, Do | 07-25-2013 |
20130188993 | SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE - A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror formed on the substrate including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer formed on the first semiconductor multi-layer reflecting mirror, having an optical film thickness greater than an oscillation wavelength, and including Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror formed on the active region and including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn. | 07-25-2013 |
20130214303 | LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ARRAY, OPTICAL WRITING HEAD, AND IMAGE FORMING APPARATUS - A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region. | 08-22-2013 |
20130234167 | LIGHT-EMITTING ELEMENT, SELF-SCANNING LIGHT-EMITTING ELEMENT ARRAY, OPTICAL WRITING HEAD, AND IMAGE FORMING APPARATUS - Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer. | 09-12-2013 |
20130234168 | LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, SELF-SCANNING LIGHT-EMITTING ELEMENT ARRAY, OPTICAL WRITING HEAD, AND IMAGE FORMING APPARATUS - Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor. | 09-12-2013 |
20130243023 | SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, LIGHT TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS - A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector. | 09-19-2013 |
20140022326 | SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE - A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror that is formed on the substrate and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer that is formed on the first semiconductor multi-layer reflecting mirror, has an optical film thickness greater than an oscillation wavelength, and includes Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror that is formed on the active region and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn. | 01-23-2014 |
20140023380 | SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode. | 01-23-2014 |
20140044438 | SURFACE EMITTING SEMICONDUCTOR LASER, MANUFACTURING METHOD FOR SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE - A surface emitting semiconductor laser includes a first semiconductor multilayer reflector of a first conductivity type, an active area, a second semiconductor multilayer reflector of a second conductivity type, a current confinement layer having a conductive area and a surrounding high-resistance area, each provided on a substrate, and a higher-order transverse mode suppressing layer formed on an emission surface from which laser light is emitted and in an area in which higher-order transverse mode is induced. The higher-order transverse mode suppressing layer includes first to third insulation films having first to third refractive indices, respectively, formed on each other, and capable of transmitting an oscillation wavelength. The second refractive index is lower than the first refractive index. The third refractive index is higher than the second refractive index. The optical film thickness of the first to third insulation films is an odd number times one-fourth of the oscillation wavelength. | 02-13-2014 |
20140078525 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER READABLE MEDIUM - An image processing apparatus includes an object inserting unit, a spot color converting unit, and a color conversion processing unit. The object inserting unit calculates, in a case where a designation for overprinting a first object on a second object is made, the position and shape of an overlap portion and a color value representing the color of the overlap portion using a process color, generates a third object having the calculated position, shape, and color value, and inserts the third object into print image data with a designation of knockout. The spot color converting unit converts the color value of the first object represented using the spot color into a color value represented using a process color. The color conversion processing unit performs color conversion processing for the color values of the first object, the second object, and the third object and outputs the color-converted print image data. | 03-20-2014 |
20140112364 | SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A laser includes: a substrate; a first reflector including pairs of high and low refractive index layers; an active region forming a resonator; a second reflector including an emission surface and pairs of high and low refractive index layers; an extending region thicker than oscillation wavelength, extending the length of the resonator, and including a conductive semiconductor material; a confining layer including a high refractive index region and a surrounding low refractive index region; and an additional film allowing the oscillation wavelength to transmit therethrough. The first and second reflectors, the extending region, and the active region determine a reflection band including resonance wavelengths, in one of which oscillation occurs. The additional film includes central and outer circumferential portions having different thicknesses to suppress resonance in the high refractive index region and the extending region. The central and outer circumferential portions overlap the high and low refractive index regions, respectively. | 04-24-2014 |
20150227821 | IMAGE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE MEDIUM - Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process and an additional process for printing on print data, and an image density calculation section that executes the rasterizing process on the print data without the additional process and calculates image density information used in control of an image forming process in the printing device from raster image data generated through the rasterizing process to process the print data at a speed higher than a speed in print image generation section, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes image density information of a page prior to a page of the print image data printed by the printing device to be supplied to the printing device. | 08-13-2015 |
20150227824 | IMAGE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE MEDIUM - Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process with a resolution for printing on print data, and an image density calculation section that executes the rasterizing process on the print data with a resolution lower than the resolution for printing and calculates image density information used in control of an image forming process in the printing device based on raster image data which is generated through the rasterizing process and has a resolution lower than the resolution for printing, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes the image density information of a page prior to a page of the print image data being printed by the printing device to be supplied to the printing device. | 08-13-2015 |
20160006214 | SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode. | 01-07-2016 |
20160064899 | SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE - Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector. | 03-03-2016 |
20160064900 | SURFACE-EMITTING SEMICONDUCTOR LASER, METHOD FOR PRODUCING THE SAME, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE - A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. | 03-03-2016 |
20160099549 | SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME - A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions. | 04-07-2016 |
20160118773 | SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME - Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove. | 04-28-2016 |
Patent application number | Description | Published |
20110186893 | OPTICAL-SEMICONDUCTOR DEVICE - The present invention relates to an optical-semiconductor device, which is prepared by: arranging a sheet for optical-semiconductor element encapsulation including an encapsulating resin layer capable of embedding an optical-semiconductor element and a wavelength conversion layer containing light wavelength-converting particles and being laminated directly or indirectly on the encapsulating resin layer, on an optical-semiconductor element-mounting substrate so that the encapsulating resin layer faces the optical-semiconductor element-mounting substrate; followed by compression-molding, in which the wavelength conversion layer is present on an upper part of a molded body in which the optical-semiconductor element is embedded therein, but is not present on a side surface of the molded body. | 08-04-2011 |
20110301276 | COMPOSITION FOR THERMOSETTING SILICONE RESIN - The present invention relates to a composition for a thermosetting silicone resin, including: (1) an organopolysiloxane having a silanol group at an end thereof; (2) an alkenyl group-containing silicon compound; (3) an epoxy group-containing silicon compound; (4) an organohydrogensiloxane; (5) a condensation catalyst; (6) a hydrosilylation catalyst; and (7) a silica particle, in which the (7) silica particle has a 50% volume cumulative diameter of from 2 to 50 μm, a content of particles having a particle size of 1 μm or less of 15% by number or less and a content of particles having a particle size of 60 μm or more of 15% by number or less. | 12-08-2011 |
20120153345 | OPTICAL SEMICONDUCTOR DEVICE - The present invention relates to an optical semiconductor device including: a substrate having mounted thereon an LED chip; an encapsulation resin layer embedding the LED chip; an inorganic high-heat conductive layer; and a wavelength conversion layer containing an inorganic phosphor powder, in which the encapsulation resin layer, the inorganic high-heat conductive layer and the wavelength conversion layer are laminated in this order on the substrate either directly or indirectly. | 06-21-2012 |
20120319153 | ENCAPSULATING SHEET AND OPTICAL SEMICONDUCTOR ELEMENT DEVICE - An encapsulating sheet includes an encapsulating resin layer and a wavelength conversion layer laminated on the encapsulating resin layer. The wavelength conversion layer is formed by laminating a barrier layer formed of a light transmissive resin composition and having a thickness of 200 μm to 1000 μm, and a phosphor layer containing a phosphor. | 12-20-2012 |
20130063939 | ENCAPSULATING SHEET, PRODUCING METHOD THEREOF, LIGHT EMITTING DIODE DEVICE, AND PRODUCING METHOD THEREOF - An encapsulating sheet includes an encapsulating layer for encapsulating a light emitting diode element, a light scattering layer formed at one side in a thickness direction of the encapsulating layer and for scattering light emitted from the light emitting diode element, and a spacer layer interposed between the encapsulating layer and the light scattering layer. | 03-14-2013 |
20130092973 | ENCAPSULATING SHEET AND OPTICAL SEMICONDUCTOR ELEMENT DEVICE - An encapsulating sheet is formed from an encapsulating resin composition which contains an encapsulating resin and silicone microparticles, and the mixing ratio of the silicone microparticles with respect to the encapsulating resin composition is 20 to 50 mass %. | 04-18-2013 |
20130134467 | ELEMENT-CONNECTING BOARD, PRODUCING METHOD THEREOF, AND LIGHT-EMITTING DIODE DEVICE - An element-connecting board is a lead frame for allowing a light emitting diode element to be connected to one side thereof in a thickness direction. The element-connecting board includes the lead frame which is provided with a plurality of leads disposed with spaces from each other and a first insulating resin portion which is light reflective and fills the spaces. | 05-30-2013 |
20130168717 | ENCAPSULATING SHEET, PRODUCING METHOD OF OPTICAL SEMICONDUCTOR DEVICE, OPTICAL SEMICONDUCTOR DEVICE, AND LIGHTING DEVICE - An encapsulating sheet, encapsulating an optical semiconductor element, includes a first layer which contains a phosphor and a second layer which contains a phosphor, is laminated on the first layer, and encapsulates the optical semiconductor element. The ratio of the volume of the phosphor in the first layer to that of the phosphor in the second layer is 90:10 to 55:45. | 07-04-2013 |
20130228803 | LIGHT-EMITTING DEVICE, LIGHTING DEVICE, LIGHT-EMITTING DEVICE ASSEMBLY, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate including a mirror surface region on its upper surface, a semiconductor light-emitting element disposed in the mirror surface region, and an encapsulating layer joined onto the upper surface of the substrate. The encapsulating layer includes a lower layer that is in contact with the upper surface of the substrate, covers the surrounding of the semiconductor light-emitting element, and contains phosphor; and an upper layer that is positioned on the lower layer, and has a larger phosphor content per unit area than that of the lower layer. | 09-05-2013 |
20130328100 | ENCAPSULATING SHEET, LIGHT EMITTING DIODE DEVICE, AND PRODUCING METHOD THEREOF - An encapsulating sheet includes an encapsulating resin layer and a barrier film layer formed at one side in a thickness direction of the encapsulating resin layer. | 12-12-2013 |
20140057374 | OPTICAL-SEMICONDUCTOR DEVICE - The present invention relates to an optical-semiconductor device, which is prepared by: arranging a sheet for optical-semiconductor element encapsulation including an encapsulating resin layer capable of embedding an optical-semiconductor element and a wavelength conversion layer containing light wavelength-converting particles and being laminated directly or indirectly on the encapsulating resin layer, on an optical-semiconductor element-mounting substrate so that the encapsulating resin layer faces the optical-semiconductor element-mounting substrate; followed by compression-molding, in which the wavelength conversion layer is present on an upper part of a molded body in which the optical-semiconductor element is embedded therein, but is not present on a side surface of the molded body. | 02-27-2014 |
20140091334 | ENCAPSULATING SHEET-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND PRODUCING METHOD THEREOF - A method for producing an encapsulating sheet-covered semiconductor element includes a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other and an encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and to form a space over the semiconductor elements adjacent to each other. | 04-03-2014 |
20140091348 | ENCAPSULATING SHEET-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND PRODUCING METHOD THEREOF - An encapsulating sheet-covered semiconductor element includes a semiconductor element having one surface in contact with a board and the other surface disposed at the other side of the one surface and an encapsulating sheet covering at least the other surface of the semiconductor element. The encapsulating sheet includes an exposed surface that is, when projected from one side toward the other side, not included in the one surface of the semiconductor element and exposed from the one surface and the exposed surface has the other side portion that is positioned toward the other side with respect to the one surface of the semiconductor element. | 04-03-2014 |
20140131752 | PHOSPHOR LAYER-COVERED OPTICAL SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, OPTICAL SEMICONDUCTOR DEVICE, AND PRODUCING METHOD THEREOF - A method for producing a phosphor layer-covered optical semiconductor element includes a step of opposing a phosphor layer containing a phosphor to an optical semiconductor element and an adjusting step of adjusting a color tone of light emitted from the optical semiconductor element and exited via the phosphor layer by adjusting the thickness of the phosphor layer. | 05-15-2014 |
20140329346 | ELEMENT CONNECTING BOARD, PRODUCING METHOD THEREOF, AND LIGHT EMITTING DIODE DEVICE - An element-connecting board is a lead frame for allowing a light emitting diode element to be connected to one side thereof in a thickness direction. The element-connecting board includes the lead frame which is provided with a plurality of leads disposed with spaces from each other and a first insulating resin portion which is light reflective and fills the spaces. | 11-06-2014 |
20140374787 | ENCAPSULATING SHEET, PRODUCING METHOD OF OPTICAL SEMICONDUCTOR DEVICE, OPTICAL SEMICONDUCTOR DEVICE, AND LIGHTING DEVICE - An encapsulating sheet, encapsulating an optical semiconductor element, includes a first layer which contains a phosphor and a second layer which contains a phosphor, is laminated on the first layer, and encapsulates the optical semiconductor element. The ratio of the volume of the phosphor in the first layer to that of the phosphor in the second layer is 90:10 to 55:45. | 12-25-2014 |
20150152048 | SUBSTITUTED PYRROLIDINES AS FACTOR XIA INHIBITORS FOR THE TREATMENT THROMBOEMBOLIC DISEASES - The present invention provides compounds of the general formula (I), their salts and N-oxides, and solvates and prodrugs thereof (wherein the substituents are as defined in the description). The compounds of the general formula (I) are inhibitors of factor XIa, and are useful in the prevention of and/or therapy for thromboembolic diseases. | 06-04-2015 |
20150152112 | COMPOUNDS - The present invention provides compounds of the general formula (I), their salts and N-oxides, and solvates and prodrugs thereof (wherein the characters are as defined in the description). The compounds of the general formula (I) are inhibitors of Factor XIa, so that they are useful in the prevention of and/or therapy for thromboembolic diseases. | 06-04-2015 |
Patent application number | Description | Published |
20110205528 | SAMPLE ANALYSIS METHOD - A sample analysis method is provided for analyzing a sample having a permeability to terahertz radiation and accurately measure the composition, physical properties, mass and dimensions of a very small sample or a minute amount of sample by irradiating the sample with terahertz radiation. In the method, a reflective member is provided adjoining a first principal surface of the sample, an entrance member is provided adjoining a second principal surface of the sample, terahertz radiation is delivered from outside of entrance member towards the sample, and the sample is analyzed using an interference wave generated from a first-surface reflected wave at the interface between the first principal surface of the sample and the reflective member and a second-surface reflected wave at the interface between the second principal surface of the sample and the entrance member. | 08-25-2011 |
20120008142 | METHOD FOR MEASURING CHARACTERISTIC OF OBJECT TO BE MEASURED, STRUCTURE CAUSING DIFFRACTION PHENOMENON, AND MEASURING DEVICE - A method of attaching an object to be measured to a structure causing a diffraction phenomenon; irradiating the structure to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave; detecting the electromagnetic wave scattered by the structure causing the diffraction phenomenon; and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The object to be measured is attached directly to the surface of the structure causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibits an improved measurement sensitivity and high reproducibility. A structure causing a diffraction phenomenon and used for the method, and a measuring device are provided. | 01-12-2012 |
20120137755 | METHOD FOR MEASUREMENT OF PROPERTIES OF ANALYTE - A measurement method that includes irradiating a void-arranged structure on which an analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure, and determining a property of the analyte on the basis of at least one parameter, the parameter including the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte. | 06-07-2012 |
20120153159 | Method of Measuring Characteristics of Specimen and Flat-Plate Periodic Structure - A measuring method that includes holding a specimen to be measured on a flat-plate periodic structure, applying a linearly-polarized electromagnetic wave to the flat-plate periodic structure, detecting the electromagnetic wave scattered forward or backward by the flat-plate periodic structure, and measuring characteristics of the specimen on the basis of a phenomenon that a dip waveform appearing in a frequency characteristic of the forward-scattered electromagnetic wave or a peak waveform appearing in a frequency characteristic of the backward-scattered electromagnetic wave is changed with the presence of the specimen. The flat-plate periodic structure is a flat-plate structure in which at least two voids penetrating through the structure in a direction perpendicular to a principal surface thereof are periodically arrayed in at least one direction on the principal surface, and the electromagnetic wave is applied to the principal surface of the flat-plate periodic structure from the direction perpendicular to the principal surface. | 06-21-2012 |
20120262190 | Method and Apparatus for Measuring Characteristics of Object - A measuring method for measuring characteristics of an object to be measured, the measuring method including holding the object on a void-arranged structure having at least two void portions that pass therethrough in a direction perpendicular to a principal surface thereof, and applying electromagnetic waves to the void-arranged structure on which the object is held to detect frequency characteristics of the electromagnetic waves transmitted through the void-arranged structure. The void-arranged structure has a grid structure in which the void portions are periodically arranged in at least one direction on the principal surface of the void-arranged structure. The characteristics of the object are measured on the basis of a relationship between a first frequency characteristic and a second frequency characteristic. | 10-18-2012 |
20130221209 | METHOD OF MEASURING CHARACTERISTICS OF SPECIMEN, AND FLAT-PLATE PERIODIC STRUCTURE - The present invention provides a measuring method comprising the steps of holding a specimen on a flat-plate periodic structure, applying a linearly-polarized electromagnetic wave to the periodic structure, and measuring characteristics of the specimen based on change of the electromagnetic wave scattered forward or backward by the periodic structure, wherein the periodic structure is structured such that plural unit structures having the same shape are two-dimensionally and periodically interconnected in a direction of one reference plane, the unit structure has at least one aperture penetrating therethrough in a direction perpendicular to the reference plane, the electromagnetic wave is applied from a direction perpendicular to the reference plane, and the unit structure has a shape that is not mirror-symmetric with respect to an imaginary plane orthogonal to a polarizing direction of the electromagnetic wave. | 08-29-2013 |
20140021353 | MEASUREMENT STRUCTURE, METHOD OF MANUFACTURING SAME, AND MEASURING METHOD USING SAME - A measurement structure including an aperture array structure made of a metal and having a plurality of aperture portions, and a support base supporting the aperture array structure. The measurement structure is used in a measuring method by applying an electromagnetic wave to the measurement structure on which a specimen is held, detecting frequency characteristics of the electromagnetic wave transmitted through the measurement structure or reflected by the measurement structure, and measuring characteristics of the specimen. At least a first part of a surface of the aperture array structure proximal to the support base is joined to the support base, and at least a second part of the surface of the aperture array structure defines at least part of the plurality of aperture portions, the second part of the surface being proximal to the support base and not in contact with the support base. | 01-23-2014 |
20140084164 | SPECIMEN MEASURING METHOD - The characteristics of a specimen are measured by holding the specimen on an aperture array structure having apertures, applying an electromagnetic wave to the aperture array structure, and detecting frequency characteristics of the electromagnetic wave reflected by the aperture array structure. A liquid is directly or indirectly attached to at least a part of a first principal surface. The electromagnetic wave is applied from side including a second principal surface. The apertures of the aperture array structure have a size which does not allow the liquid to leak from the first principal surface side to the second principal surface side, and the liquid is attached to the first principal surface of the aperture array structure in a state open to an atmosphere under air pressure. | 03-27-2014 |
20140247452 | PERIODIC STRUCTURE AND MEASUREMENT METHOD USING THE SAME - A plate-shaped periodic structure is provided that includes at least two aperture portions extending through the periodic structure in a direction perpendicular to a main surface of the periodic structure and periodically arranged in at least one direction along the main surface. Each of the aperture portions has a shape that is not mirror-symmetric with respect to an imaginary plane that is a plane perpendicular to the main surface. Each of the aperture portions includes a constricted portion at which a gap distance of the aperture portion is partially small, the gap distance being a width in a direction parallel to a line of intersection of the main surface and the imaginary plane. | 09-04-2014 |
20140252235 | MEASUREMENT DEVICE AND FEATURE MEASUREMENT METHOD OF OBJECT TO BE MEASURED EMPLOYING SAME - A measurement device that includes a device main unit including at least one cavity for accommodating an analyte containing a specimen and an aperture array structure including a plurality of apertures extending therethrough in a direction perpendicular to a principal surface thereof. The aperture array structure is fixed such that part or all of the aperture array structure is positioned in the cavity. | 09-11-2014 |
20150123001 | MEASUREMENT METHOD FOR OBJECT TO BE MEASURED AND MEASUREMENT DEVICE USED THEREOF - A measurement method is disclosed for measuring the presence or absence of an object to be measured or the quantity thereof, and the measurement method includes irradiating an electromagnetic wave on a void-arranged structural body holding the object to be measured, and detecting characteristics of an electromagnetic wave scattered by the void-arranged structural body. The void-arranged structural body has a plurality of void portions penetrating in a direction perpendicular to a primary surface thereof, and at least a part of the object to be measured is held by the void-arranged structural body with carrier particles provided therebetween. | 05-07-2015 |
20150129769 | Measurement Method for Object to be Measured - A method for measuring the presence or absence of an object to be measured in a specimen or the quantity thereof. The method includes filtrating the object to be measured from the specimen using as a physical filter, a void-arranged structural body having a plurality of void portions penetrating in a direction perpendicular to a primary surface thereof so as to hold the object to be measured by the void-arranged structural body; irradiating an electromagnetic wave on the void-arranged structural body holding the object to be measured; and detecting characteristics of an electromagnetic wave scattered by the void-arranged structural body. | 05-14-2015 |
20150136989 | APERTURE ARRAY STRUCTURE AND MEASUREMENT METHOD USING THE SAME - An aperture array structure used in a method of measuring characteristics of a specimen by applying an electromagnetic wave to an aperture array structure on which the specimen is held, and detecting frequency characteristics of the electromagnetic wave scattered by the aperture array structure. The aperture array structure includes a first principal surface, a second principal surface opposed to the first principal surface, and a plurality of apertures extending through the aperture array structure in a direction perpendicular to the first principal surface and the second principal surface. An opening area of each aperture at the first principal surface is smaller than an opening area of each aperture at the second principal surface. | 05-21-2015 |
20150198527 | PERFORATED-STRUCTURE BODY, MANUFACTURING METHOD THEREFOR, AND MEASUREMENT APPARATUS AND MEASUREMENT METHOD - A perforated-structure body having a plurality of apertures that penetrate from a first main surface to a second main surface of a perforated plate. Support substrates are stacked on at least one of the first main surface and the second main surface of the perforated plate so as to define a portion through which at least one of the apertures is exposed. | 07-16-2015 |
20150323453 | VOID-ARRANGED STRUCTURE AND MEASUREMENT METHOD - A void-arranged structure having a plurality of void sections that penetrate from a first principal surface toward a second principal surface. An opening shape of the void section includes at least one curved corner. | 11-12-2015 |
20160041075 | FILTER DEVICE AND MEASURING APPARATUS - A filter device through which a fluid containing a target substance and a coarse substance larger than the target substance is passed to selectively collect the target substance from the fluid. The filter device includes a prefilter that removes the coarse substance and a collection filter that collects the target substance. The prefilter and the collection filter are arranged in series such that the fluid passes through the prefilter and then through the collection filter. The prefilter includes a cavity arrangement structure having a pair of opposing main surfaces and a plurality of cavities extending through both main surfaces. | 02-11-2016 |
20160054223 | METHOD FOR MEASURING ANALYTE - A method for measuring the presence or amount of at least one analyte in a sample mixture that includes capturing a first analyte on a first cavity arrangement structure having a plurality of cavities; capturing an impurity present in the sample mixture or a second analyte on a second cavity arrangement structure that has a plurality of cavities and that differs from the first cavity arrangement structure in at least one of cavity size and surface modification; and after these steps, irradiating the first cavity arrangement structure or the first and second cavity arrangement structures with electromagnetic radiation and detecting the characteristics of scattered electromagnetic radiation. | 02-25-2016 |