Takashi Kobayashi
Takashi Kobayashi, Higashimurayama JP
Patent application number | Description | Published |
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20080277661 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas sectioned by chip areas is prepared. Next, pads to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas. Subsequently, the respective test areas are tested by a same probe card via the plurality of pads. | 11-13-2008 |
20080283945 | SEMICONDUCTOR DEVICE - A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes. | 11-20-2008 |
20090322181 | ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME - A technique for a capacitive micromachined ultrasonic transducer (CMUT) for achieving high transmitted sound pressure and high receiver sensitivity is provided. An opening portion ( | 12-31-2009 |
20110086443 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips | 04-14-2011 |
20110272693 | MANUFACTURING METHOD OF ULTRASONIC PROBE AND ULTRASONIC PROBE - The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented. | 11-10-2011 |
20110284817 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode. | 11-24-2011 |
20110316383 | ULTRASONIC TRANSDUCER, METHOD OF PRODUCING SAME, AND ULTRASONIC PROBE USING SAME - Disclosed is an art for a capacitive micromachined ultrasonic transducer (CMUT), which suppresses deformation in a cavity, non-uniformity in the thickness of an insulating film enclosing the cavity, and deterioration in the flatness of the surface profile of a membrane, even when the bottom electrode of the ultrasonic transducer is electrically connected from the bottom of the bottom electrode. The ultrasonic transducer is provided with: a bottom electrode ( | 12-29-2011 |
20120069701 | ULTRASONIC TRANSDUCER AND ULTRASONIC DIAGNOSTIC APPARATUS PROVIDED WITH SAME - For disposing projections of insulating film protruding into a hollow part in CMUT in order to suppress injection of electrical charge into the insulating film due to contact of a lower surface of a membrane with a lower surface of the hollow part, there are provided a structure of disposed projections preferred for suppressing increase in driving voltage for CMUT and decrease in receiving sensitivity, and an ultrasonic diagnostic apparatus using the same. The ultrasonic transducer of the present invention comprises a first electrode, a lower insulating film formed on the first electrode, an upper insulating film provided so as to form a hollow part above the lower insulating film, and a second electrode formed on the upper insulating film, and is characterized in that the lower insulating film or the upper insulating film has projections on the side of the hollow part, and the first electrode or the second electrode has openings formed at positions corresponding to the positions at which the projections are formed. | 03-22-2012 |
20120074368 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device having a diode and a transistor connected in series, which prevents carriers from going from the diode into the transistor, thereby reducing the possibility of transistor deterioration. A structure to annihilate carriers from the diode is provided between a channel layer of the transistor and a diode semiconductor layer of the diode where the carriers are generated. | 03-29-2012 |
20120211717 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device in which the cell area can be decreased and the minimum feature size is not restricted by the thickness of the material forming the memory cell. In a semiconductor memory device, a gate insulating film, a channel extending in a direction X, and a resistance change element extending in the direction X are formed successively above multiple word lines extending in a direction Y, and a portion of the channel and a portion of the resistance change element are disposed above each of the plurality of the word lines. Such configuration can decrease the cell area and ensure the degree of design freedom. | 08-23-2012 |
20120248399 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line ( | 10-04-2012 |
20130075684 | NON-VOLATILE MEMORY DEVICE - A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a direction perpendicular to the main surface; a second insulator film provided along a side surface of the stack; a channel layer provided along the second insulator film; an adhesion layer provided along the channel layer; and a variable resistance material layer provided along the adhesion layer, wherein the first and second lines are electrically connected via the select element and channel layer, a contact resistance via the adhesion layer between the channel layer and variable resistance material layer is low, and a resistance of the adhesion layer is high with respect to an extending direction of the channel layer. | 03-28-2013 |
20130141968 | SEMICONDUCTOR STORAGE DEVICE - The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between a word line ( | 06-06-2013 |
20130228739 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film. | 09-05-2013 |
20130234101 | NON-VOLATILE MEMORY DEVICE AND PRODUCTION METHOD THEREOF - A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced. | 09-12-2013 |
20140065789 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode. | 03-06-2014 |
20140103287 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word line and having N+1 first inter-gate insulating layers and N first semiconductor layers alternately laminated; a first bit line above the laminated body and extending in a direction that intersects the first word line; a first gate insulating layer on side surfaces of the first inter-gate insulating layers and the first semiconductor layers; a first channel layer on the side surface of the first gate insulating layer; and a first variable resistance material layer on the side surface of the first channel layer. The first variable resistance material layer is in a region where the first word line and the first bit line intersect. A polysilicon diode is used as a selection element. | 04-17-2014 |
20140361241 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line ( | 12-11-2014 |
20150118804 | NON-VOLATILE MEMORY DEVICE AND PRODUCTION METHOD THEREOF - A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced. | 04-30-2015 |
20160005969 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line ( | 01-07-2016 |
20160079529 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film. | 03-17-2016 |
Takashi Kobayashi, Kawasaki JP
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20110048588 | COLD-ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - A cold-rolled steel sheet has a partially recrystallized grain structure with a degree of unrecrystallization of 25% to 90% and a Rockwell hardness HRB of 83 or more, the cold-rolled steel sheet containing 0.01% to 0.15% C, 0.03% or less Si, 0.10% to 0.70% Mn, 0.025% or less P, 0.025% or less S, 0.01% to 0.05% Al, and 0.008% or less N on a mass basis, the remainder being Fe and unavoidable impurities, wherein the mean diameter of ferrite is 2 to 10 μm and these components satisfy Formula (1): (C %)+0.15×(Mn %)+0.85×(P %)≧0.21, wherein (M %) represents the content (mass percent) of an element M. | 03-03-2011 |
20120240111 | STORAGE MEDIUM STORING PROGRAM FOR CONTROLLING VIRTUAL MACHINE, COMPUTING MACHINE, AND METHOD FOR CONTROLLING VIRTUAL MACHINE - A computer executes processes of: setting the upper limit of an available processing capacity for each user; setting a plurality of virtual machines for each of the users; and distributing the processing capacity to the plurality of virtual machines for each of the users within the upper limit of the processing capacity set for each of the users. | 09-20-2012 |
20140332122 | HIGH CARBON HOT ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME (AS AMENDED) - A high carbon hot rolled steel sheet having a chemical composition containing by mass %, C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, Al: 0.1% to 0.6%, Cr: 0.05% to 0.5%, B: 0.0005% to 0.0050%, Ca: 0.0010% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, where the average amount of N in a surface layer portion from the surface to the position at a depth of 0.1 mm in thickness direction is 0.1% or more and the average amount of N in the central portion in thickness is 0.01% or less, and a microstructure composed of ferrite and carbides, wherein the average grain size of the ferrite is 10 to 20 and the spheroidization ratio of the carbides is 90% or more. | 11-13-2014 |
20150090376 | HIGH CARBON HOT-ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - A high carbon hot rolled steel sheet and a method for manufacturing the same are provided, wherein excellent cold workability and excellent hardenability are obtained stably. The high carbon hot rolled steel sheet has a composition containing C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, sol. Al: more than 0.10% and 1.0% or less, N: 0.005% or less, B: 0.0005% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the average grain size of the above-described ferrite is 10 to 20 μm and the spheroidization ratio of the above-described cementite is 90% or more. | 04-02-2015 |
Takashi Kobayashi, Amagasaki-Shi JP
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20110053381 | METHOD FOR MODIFYING INSULATING FILM WITH PLASMA - Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O | 03-03-2011 |
Takashi Kobayashi, Tochigi-Ken JP
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20090032508 | PERFORATION METHOD AND PERFORATION APPARATUS - A perforation method and an perforation apparatus in which a hollow member of a fuel injection nozzle is filled with a filler such as a zirconia ball, and a laser light is applied to the hollow member to form an injection hole while vibrating the zirconia ball using an ultrasonic vibrator. After the injection hole is formed, the laser light is introduced through the injection hole to the inside of the fuel injection nozzle, and thereby is applied to the vibrated zirconia ball. | 02-05-2009 |
20100282727 | LASER WORKING APPARATUS, AND LASER WORKING METHOD - A first laser working method includes a step of irradiating the metallic work held by a rotation holding mechanism, with a nanosecond laser beam from a first laser oscillation mechanism, to form a through hole, and a step of irradiating, when the metallic work is rotated under the action of the rotation holding mechanism, the inner wall of the through hole with a picosecond laser beam from a second laser oscillation mechanism, thereby to finish the same. While forming the through hole, metal vapor is sucked from the outside of the metallic work. Then, the gas is fed from the outside of the metallic work, and the inside of the metallic work is suctioned. In a second laser working method, when a lower hole made through is radially enlarged, the exit side of the lower hole is kept lower in pressure than the laser incident (or entrance) side. | 11-11-2010 |
Takashi Kobayashi, Hyogo-Ken JP
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20080317975 | Cleaning Method and Plasma Processing Method - In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H | 12-25-2008 |
20100093186 | METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed. | 04-15-2010 |
20100136797 | PLASMA OXIDATION PROCESSING METHOD, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa. | 06-03-2010 |
20100240225 | MICROWAVE PLASMA PROCESSING APPARATUS, MICROWAVE PLASMA PROCESSING METHOD, AND MICROWAVE-TRANSMISSIVE PLATE - Disclosed is a microwave plasma processing apparatus ( | 09-23-2010 |
Takashi Kobayashi, Tochigi JP
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20100219166 | HOLE-FORMING MACHINE - A hole-forming machine for forming a through-hole ( | 09-02-2010 |
Takashi Kobayashi, Kanagawa JP
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20090061242 | Carbon Fiber Composite Transfer Member with Reflective Surfaces - A method of transporting precision equipment materials without absorption of thermal energy through the heat sensitive material or device such as flat panel displays. The transfer member has a carbon fiber reinforced composite material body with a layer of metal film on the top and bottom surfaces of the transfer member that provides a reflective surface. Flat panel displays, for example, release radiant thermal energy that is absorbed by the carbon fiber reinforced composite which is detrimental to the flat panel display. The reflective surface created by the metal film prevents the energy absorption by the carbon fiber reinforced composite. A glass fiber and epoxy layer on the metal film surface protects the metal film. | 03-05-2009 |
20090252896 | HYBRID FILM, METHOD FOR THE PRODUCTION THEREOF AND OPTICALLY COMPENSATORY FILM, POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - A dope solution in which a cellulose acylate and a cycloolefin compound having a mass-average molecular mass of from 200 to 20,000 are dissolved in admixture is subjected to solution film forming to obtain a hybrid film. Further, an optically anisotropic layer having retardation Re of from 0 nm to 200 nm is provided on the hybrid film to prepare an optically compensatory film. The optically compensatory film and a polarizer are stuck to each other to prepare a polarizing plate which is then used to obtain a liquid crystal display device. | 10-08-2009 |
20100149956 | OPTICAL INTEGRATED DEVICE, METHOD FOR DETECTING LIGHT, OPTICAL PICKUP, AND OPTICAL DISC APPARATUS - An optical integrated device includes a light source; a light splitting-and-guiding section that splits a reflected light beam into two end light beams, a connection light beam, and a residual light beam, and guides the two end light beams and the connection light beam in directions different from a direction of the residual light beam; and a light receiving section that receives the two end light beams and the connection light beam with photodetection devices divided, in the tangential direction, into at least two regions within a range in which the connection light beam is incident, receives the residual light beam with photodetection devices divided, in the tangential direction, into regions having widths corresponding to portions on which the two end light beams are incident, and outputs a detection signal in accordance with an amount of light received with each of the photodetection devices. | 06-17-2010 |
20110214135 | DATA PROCESSING DEVICE - There is provided a data processing device able to surely eject a recording medium out of a main body of the device even when the recording medium is received in a case while a locking member having adherence and elasticity of the case is locked with a center hole of the recording medium. | 09-01-2011 |
20130045381 | MULTILAYER FILM FOR SUPPORTING OPTICAL FUNCTIONAL MEMBER AND METHOD FOR PRODUCING THE SAME, AND PRISM SHEET - A prism sheet is provided with a prism member, being an optical functional member, and a multilayer film for supporting the prism member. The multilayer film is provided with a base layer and an adhesive layer. One of surfaces of the adhesive layer is adhered to a surface of the base layer. The other surface of the adhesive layer is adhered to the prism member. Thus, the prism member is adhered to the base layer through the adhesive layer. Polyester contained in the adhesive layer has a glass transition temperature Tg of less than 60° C. At least 30 mol % of dicarboxylic acid units in the polyester contained in the adhesive layer have naphthalene rings. | 02-21-2013 |
20130186526 | HOT-ROLLED STEEL SHEET HAVING EXCELLENT COLD FORMABILITY AND HARDENABILITY AND METHOD FOR MANUFACTURING THE SAME - Hot-rolled steel has a chemical composition containing, by mass%, C: 0.18% or more and 0.29% or less, N: 0.0050% or less, Ti: 0.002% or more and 0.05% or less, B: 0.0005% or more and 0.0050% or less, and appropriately controlled amounts of Si, Mn, P, S, Al, and a tensile strength of 500 MPa or less with a variation in tensile strength of 60 MPa or less throughout a region including the edges in the width direction of the steel sheet, and having excellent cold formability and hardenability. | 07-25-2013 |
Takashi Kobayashi, Hyogo JP
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20090035484 | Plasma processing method - Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H | 02-05-2009 |
20090039406 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, PLASMA NITRIDING TREATMENT METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM - A nitrided region is formed on a surface of a polysilicon layer by a nitriding treatment wherein plasma of a processing gas is generated by introducing microwaves into a processing chamber by a planar antenna having a plurality of slots. Then, a CVD oxide film or the like is formed on the nitrided region and after patterning the polysilicon layer and the like after the prescribed shape, and then, a thermal oxide film is formed by thermal oxidation on exposed side walls and the like of the polysilicon layer by having the nitrided region as an oxidation barrier layer. Thus, generation of bird's beak can be suppressed in the process at a temperature lower than the temperature in a conventional process. | 02-12-2009 |
20090053903 | SILICON OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER STORAGE MEDIUM - A plasma processing apparatus | 02-26-2009 |
20100015815 | PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM - A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma. | 01-21-2010 |
20100029093 | PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM - A silicon oxide film forming method includes a step of placing an object to be processed and having a surface having a projecting/recessed pattern and containing silicon in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen at a proportion of 5 to 20% under a processing pressure of 267 to 400 Pa in the processing vessel, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma. | 02-04-2010 |
20100105216 | PLASMA OXIDIZING METHOD, STORAGE MEDIUM, AND PLASMA PROCESSING APPARATUS - A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film. | 04-29-2010 |
Takashi Kobayashi, Hyogen-Ken JP
Patent application number | Description | Published |
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20100093185 | METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed. | 04-15-2010 |
Takashi Kobayashi, Shibukawa-Shi JP
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20100081052 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, ELECTRODE USED FOR SECONDARY BATTERY, AND METHOD OF MANUFACTURING ELECTRODE - A non-aqueous electrolyte secondary battery includes an electrode body including a positive electrode and a negative electrode superimposed upon each other with a separator interposed therebetween. The negative electrode is superimposed upon the positive electrode in a state where a negative electrode active material layer, except the part on a proximal end part of a negative electrode tab, is positioned inside an outer edge of a positive electrode active material layer of the positive electrode. A width H | 04-01-2010 |
20130065124 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, ELECTRODE USED FOR SECONDARY BATTERY, AND METHOD OF MANUFACTURING ELECTRODE - A non-aqueous electrolyte secondary battery includes an electrode body including a positive electrode and a negative electrode superimposed upon each other with a separator interposed therebetween. The negative electrode is superimposed upon the positive electrode in a state where a negative electrode active material layer, except the part on a proximal end part of a negative electrode tab, is positioned inside an outer edge of a positive electrode active material layer of the positive electrode. A width H1 of the negative electrode active material layer including the part on the proximal end part of the negative electrode tab, width H2 of the negative electrode active material layer or negative electrode current collector at a part other than the negative electrode tab, and width H3 of the positive electrode active material layer are formed to satisfy the relationships of H2
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20140004419 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, ELECTRODE USED FOR SECONDARY BATTERY, AND METHOD OF MANUFACTURING ELECTRODE | 01-02-2014 |
Takashi Kobayashi, Osaka JP
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20100033444 | INFORMATION TERMINAL DEVICE - An information terminal device has a touch panel and a display unit which are integrally configured, and an operation button provided around the display unit, and the information terminal device includes: a touch number counting unit operable to count number of times of touching the operation button; a touch number storing unit operable to store the number of times counted by the touch number counting unit; and a control unit operable to control the information terminal device by switching an operation mode between a normal mode for working the information terminal device according to operations of the touch panel and the operation button and a cleaning mode for cleaning the touch panel, wherein in the cleaning mode, the control unit prohibits an application from being executed according to operations of the touch panel and the operation button, and terminates the cleaning mode when the number of times of touching the operation button counted by the touch number counting unit reaches a predetermined number. | 02-11-2010 |
20160031447 | DRIVING SUPPORT SYSTEM - A driving support system includes a device control unit that outputs operation control signals to a travel operation device causing a traveling vehicle body to travel and a work operation device causing a ground work apparatus to operate. A recorder records control data in execution processing order as a work/travel sequence. A reproducer reads out the control data recorded by the recorder and transmits the control data to the device control unit. A screen processor converts the control data for each execution processing unit to an icon and displays in a display a work/travel sequence screen displaying the icon in the execution processing order. The system manages a plurality of the work/travel sequences on the same work/travel sequence screen. | 02-04-2016 |
20160033038 | SPEED DATA DISPLAY SYSTEM FOR A WORK VEHICLE - A speed change display control device includes a display screen generator generating a first display screen and a second display screen. The first display screen includes: an auxiliary speed change stage display area displaying auxiliary speed change stages; a main speed change stage display area displaying main speed change stages assigned to the auxiliary speed change stages; and an engaged speed change stage display area displaying engaged speed change stages. The second display screen includes: the auxiliary speed change stage display area; the main speed change stage display area; a lower limit selection area where the speed change stage defining a lower limit of a vehicle speed change ratio is selected; an upper limit selection area where the speed change stage defining an upper limit of the vehicle speed change ratio is selected; and a selected speed change stage display area displaying the currently selected upper limit and lower limit speed change stages. | 02-04-2016 |
Takashi Kobayashi, Atsugi JP
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20100037097 | VIRTUAL COMPUTER SYSTEM, ERROR RECOVERY METHOD IN VIRTUAL COMPUTER SYSTEM, AND VIRTUAL COMPUTER CONTROL PROGRAM - A virtual computer system executes a virtual computer control program on a physical computer and thereby causes guest programs on the logical partitions, respectively. The virtual computer control program includes an error recovery module to periodically recover from an error in a cache memory, an error interruption handler module responsive to an interruption notice caused by an error which has occurred in the cache memory, to recover from an error in the cache memory, and an error data initialization module to recover from an error in the cache memory with shutdown or restart of one of the logical partitions as a momentum. And the virtual computer control program conducts recovery processing from an error in the cache memory. | 02-11-2010 |
Takashi Kobayashi, Minami-Ashigara-Shi JP
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20100021731 | MULTILAYER FILM FOR USE IN PRISM SHEET, METHOD FOR PRODUCING THE SAME, PRISM SHEET AND DISPLAY DEVICE - A prism sheet is composed of a base layer made from polyester, an adhesion layer formed on one of the surfaces of the base layer, a back layer formed on the other surface of the base layer, and a prism layer formed on the adhesion layer. A main constituent of the back layer is water-insoluble polymer with glass transition temperature (Tg) of at least 90° C. Average reflectivity of the back layer is at most 3.5% at wavelength in a range from 380 nm to 780 nm. By containing water-insoluble polymer with Tg of at least 90° C. as the main constituent, the back layer becomes free from contact damage caused by contact with the prism peaks of the adjacent prism sheet. Setting the average reflectivity of the back layer to at most 3.5% imparts brightness enhancement properties to the prism sheet. | 01-28-2010 |
20120213967 | OPTICAL LAMINATE FILM AND DISPLAY DEVICE - A stably-manufacturable optical laminate film and display device without rainbow-like unevenness are provided. An optical laminate film comprising: a support; an easily-adhesive layer provided on one surface of the support; and a transparent layer made of translucent resin provided on another surface of the support, wherein the transparent layer contains translucent particles, a volume average particle diameter r of the translucent particles satisfies 0.4 μm≦r≦3.0 μm, a total sum S of the translucent particles satisfies 30 mg/m | 08-23-2012 |
20120213968 | OPTICAL LAMINATE FILM AND DISPLAY DEVICE - A stably-manufacturable optical laminate film and display device having an excellent outer appearance without rainbow-like unevenness are provided. An optical laminate film includes a support, an easily-adhesive layer provided on one surface of the support, a transparent layer provided on the other surface of the support. In the optical laminate film, the transparent layer contains at least two types of translucent particles having different volume average particle diameters, and a total sum S of the translucent particles satisfies 30 mg/m | 08-23-2012 |
20140356618 | MULTILAYER FILM AND OPTICAL SHEET - A prism sheet as an optical functional sheet is a multilayer sheet, and includes a prism layer as an optical functional layer containing an organic material and a multilayer film. The multilayer film includes a film base and a first adhesive layer provided on the film base. The prism layer is formed on the first adhesive layer in a subsequent process. The thickness of the first adhesive layer is at least 0.1 μm. The first adhesive layer contains at least 10 mass % of polyolefin. | 12-04-2014 |
Takashi Kobayashi, Hitachinaka JP
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20090251091 | SAMPLE STAGE APPARATUS AND METHOD OF CONTROLLING THE SAME - The present invention provides a stage apparatus capable of reducing a positioning time without increasing a positional deviation. A positioning control method of a sample stage apparatus includes: a high-speed movement step of moving a table to a high-speed movement target position at a first movement speed; a positional deviation correcting step of moving the table to a low-speed positioning step start position at a second movement speed that is lower than the first movement speed; a low-speed positioning step of moving the table to a target position at a third movement speed that is lower than the second movement speed. After the low-speed positioning step is completed, a rod connected to a motor returns to its original position to separate a pin of the rod side from a concave portion of the table side. | 10-08-2009 |
Takashi Kobayashi, Okazaki-City JP
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20090235654 | EXHAUST GAS SWITCHING VALVE - A partition wall partitioning a cooler inlet port and a cooler outlet port extends from a cooler connecting surface of a connecting portion to a vicinity of a shaft supporting a four-way butterfly valve. An EGR gas leakage around a first valve plate can be restricted. Thus, an increase in temperature of EGR gas flowing through an EGR gas outlet port can be restricted at a cooled mode. A deterioration of emission reducing performance can be avoided. | 09-24-2009 |
20130313460 | VALVE DEVICE - A valve device includes a valve, an actuator actuating the valve, a control unit controlling an opening degree of the valve, a return spring biasing the valve only in a valve-closing direction, and a mechanical stopper controlling a rotating limit of the valve in the valve-closing direction. The valve is defined to rotate on a plus side from the full-close position in a valve-opening direction and to rotate on a minus side from the full-close position in a direction opposite from the valve-opening direction. The mechanical stopper stops the valve at a stopper position which is set on the minus side from the full-close position, and a predetermined overshoot range is defined between the full-close position and the stopper position. | 11-28-2013 |
20130340731 | VALVE DEVICE - A valve device has a valve that opens and closes a passage, and a cantilever bearing member rotatably supporting a rotating shaft of the valve. The cantilever bearing member has rolling-element bearings arranged in series in an axial direction of the rotating shaft. One of the rolling-element bearings located the closest to the passage has a rolling element, an inner race, an outer race and a seal portion. A space is defined between the inner race and the outer race to receive the rolling element. The seal portion made of rubber tightly seals the space on a side adjacent to the passage. | 12-26-2013 |
Takashi Kobayashi, Tokorozawa JP
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20090230453 | NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF MAKING SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MAKING DEVICE - A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved. | 09-17-2009 |
20110169070 | SEMICONDUCTOR DEVICE - For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level. | 07-14-2011 |
20120319187 | SEMICONDUCTOR DEVICE - For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level. | 12-20-2012 |
Takashi Kobayashi, Matsumoto JP
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20090194786 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes deep first field limiting rings, shallow second field limiting rings, insulation films covering each surface portion of each of the first and the second field limiting rings, and conductive field plates each in contact with a surface of each of the first and the second field limiting rings. Each of the field plates project over a surface of each of the insulation films between the first field limiting rings and the second field limiting rings. | 08-06-2009 |
20150258804 | PRINTING CONTROL APPARATUS AND PRINTING CONTROL METHOD - A printing control apparatus is configured to use a recording head where a plurality of nozzles are arranged in a row formation with a predetermined pitch, and configured to perform interlace printing such that a resolution is equal to or more than a resolution that is based on the pitch when printing is performed due to ink droplets being discharged from each of the nozzles. The printing control apparatus includes a dischargeable amount acquiring section configured to determine a dischargeable amount per unit of time according to a remaining amount of ink in an ink cartridge, and a split printing control section configured to split a predetermined region in one band an odd number of times according to the dischargeable amount per unit of time, and configured to carry out interlace printing in each of split regions on an outward path and a return path. | 09-17-2015 |
20150258828 | PRINTING CONTROL APPARATUS AND PRINTING CONTROL METHOD - A printing control apparatus includes a split printing control section configured to split a region that is printable in one band into a plurality of regions according to a predetermined number of splits, and configured to carry out interlace printing in each of split regions on an outward path and a return path. The split printing control section is further configured to determine whether there is data where dots are applied in a region in a vicinity of a boundary of two of the split regions, which includes at least one of the two of the split regions that are adjacent to each other, based on printing data for each of the split regions, and configured to carry out printing by making the number of splits an odd number of times in a case where there is data where dots are applied. | 09-17-2015 |
20150343764 | PRINTING DEVICE AND PRINTING METHOD - A printing device includes a printing head and a control unit. The printing head has a nozzle row with a one end side nozzle group of nozzles of one end side of the nozzle row, an other end side nozzle group of nozzles of an other end side of the nozzle row, and a center nozzle group of nozzles of the nozzle row, which does not correspond to the one and other end side nozzle groups. The control unit is configured to discharge the ink on a designated area on a print medium from the nozzles included in the center nozzle group and the other end side nozzle group with a first movement of the printing head and discharge the ink on the designated area from the nozzles included in the center nozzle group and the one end side nozzle group with a second movement next to the first movement. | 12-03-2015 |
Takashi Kobayashi, Hitachiota JP
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20120038236 | Permanent Magnet Rotating Electric Machine and Electric Car Using the Same - A permanent magnet rotating electric machine comprises a stator having stator windings wound round a stator iron core and a permanent magnet rotor having a plurality of inserted permanent magnets in which the polarity is alternately arranged in the peripheral direction in the rotor iron core. The rotor iron core of the permanent magnets is composed of magnetic pole pieces, auxiliary magnetic poles, and a stator yoke, and furthermore has concavities formed on the air gap face of the magnetic pole pieces of the rotor iron core of the permanent magnets, gently tilting from the central part of the magnetic poles to the end thereof. In a permanent magnet rotating electric machine, effects of iron loss are reduced, and an electric car using highly efficient permanent magnet rotating electric machine are realized. | 02-16-2012 |
Takashi Kobayashi, Matsumoto City JP
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20090039432 | SEMICONDUCTOR DEVICE - A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device. | 02-12-2009 |
20090045481 | SEMICONDUCTOR DEVICE HAVING BREAKDOWN VOLTAGE MAINTAINING STRUCTURE AND ITS MANUFACTURING METHOD - A semiconductor device has an active portion having at least one well region in a semiconductor layer, and a breakdown voltage maintaining structure surrounding the active portion. The maintaining structure includes a conductor layer over each of a plurality of guard rings with an insulating film interposed in between and connected to the respective guard ring. An inner side end portion of each conductor layer projects over the immediate adjacent inner side guard ring. The impurity concentration of the guard rings is set between the impurity concentrations of the semiconductor layer and the well regions. A field plate can extend over the innermost conductor layer with the insulating film interposed in between. The field plate is in contact with the outermost well region and is in contact with the first conductor layer. The outer side end of the field plate extends outwardly beyond an outer side end of the innermost conductor layer. With these arrangements, the guard rings can be shortened and the chip size can be reduced. Furthermore, the device can be made less susceptible to external charge. | 02-19-2009 |
20090174076 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing. | 07-09-2009 |
20120088364 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing. | 04-12-2012 |
Takashi Kobayashi, Nagareyama JP
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20090069688 | ULTRASOUND PROBE - There is provided an ultrasound probe including a first substrate having a silicon substrate and an ultrasound transmit-receive element, an acoustic lens disposed over an upper surface of the first substrate, and a damping layer disposed under the first substrate, in which a second substrate is disposed between a lower surface of the first substrate and an upper surface of the damping layer, and the second substrate is made of a material having approximately the same linear expansion coefficient and acoustic impedance as the silicon substrate of the first substrate. With this structure, it is possible to provide the ultrasound probe which can prevent damage to the silicon substrate due to temperature change and has excellent transmission/reception performance and structure reliability while reducing noise by reflected waves in transmission and reception. | 03-12-2009 |
Takashi Kobayashi, Shizuoka JP
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20080318034 | BARRIER FILM AND DEVICE - Disclosed is a barrier film capable of maintaining a high water vapor barrier property when folded. The film is characterized in that it has a structure in which an easy adhesive layer, an organic layer and an inorganic layer are laminated in that order on one surface or both surfaces of a plastic film, wherein a center liner average roughness of the surface of the organic layer on the inorganic layer side is at least 0.5 nm, and the organic layer contains a resin which is obtained by curing an acrylic monomer having at least two acryloyl groups and at least two urethane groups in one molecule as a polymerizable component. | 12-25-2008 |
Takashi Kobayashi, Ube-Shi JP
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20080287411 | Optically active dihydropyridine derivative - The optically active compound (R)-2-amino-1,4-dihydro-6-methyl-4-(3-nitrophenyl)-3,5-pyridinedicarboxylic acid 3-(1-diphenylmethylazetidin-3-yl) ester 5-isopropyl ester or a pharmacologically acceptable salt thereof, and a method using the compound or its salt to treat circulatory diseases. | 11-20-2008 |
Takashi Kobayashi, Isehara-Shi JP
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20080271666 | Method and Apparatus for Preparing Crystal - A method and an apparatus for producing crystals wherein crystal quality can be kept and a crystal composition is uniformed from a growth early stage to a growth last stage are provided. In an apparatus for producing crystals wherein the crystals | 11-06-2008 |
Takashi Kobayashi, Hagagun JP
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20080237205 | SMALL HOLE LASER MACHINING METHOD - A method of laser machining a small hole with high machining precision in a machined object. The method includes the steps of emitting a laser beam with a fixed optical axis onto a machined object while the machined object is rotated. When the optical axis of the laser beam is fixed in place, the edges of the small hole to be machined are irradiated and the small hole becomes essentially circular even if the cross-sectional shape at the focus of the laser beam is not circular. When the small hole is formed completely through the machined object, a plume is suctioned for removal from a portion of the machined object on a side opposite from the machined hole. | 10-02-2008 |
Takashi Kobayashi, Aichi JP
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20110159279 | SURFACE-COVERED CERMET MEMBER AND METHOD FOR MANUFACTURING SAME - A surface-covered cermet member capable of improving an oxidation resistance while maintaining excellent performance of a titanium series sintered compact is provided. The invention is directed to a surface-covered cermet member in which an oxidation resistant film | 06-30-2011 |
Takashi Kobayashi, Chuo-Ku JP
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20110196140 | Chitosan having tropomyosin content assessed by method of determining tropomyosin in chitosan - This invention provides a method capable of easily determining with high accuracy a protein in chitosan, said protein having a potential relevance to the development of an allergy, specifically tropomyosin and the content of the peptide. According to the method, tropomyosin is determined by immunoassay with the chitosan being in a state dissolved in an aqueous solution of an organic acid. The present invention also provides chitosan, which has a measurement value of the protein, specifically tropomyosin not higher than a predetermined value as measured by the determination method and is assessed to have only a low risk of inducing the allergy. | 08-11-2011 |
20120045783 | Method of determining tropomyosin in chitosan - A method capable of easily determining with high accuracy a protein in chitosan, the protein having a potential relevance to the development of an allergy, specifically tropomyosin and the content of the peptide. According to the method, tropomyosin is determined by immunoassay with the chitosan being in a state dissolved in an aqueous solution of an organic acid. The method also provides chitosan, which has a measurement value of the protein, specifically tropomyosin, not higher than a predetermined value as measured by the determination method and is assessed to have only a low risk of inducing the allergy. | 02-23-2012 |
Takashi Kobayashi, Minato-Ku JP
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20120223474 | IMAGE FORMING APPARATUS HAVING FIRST AND SECOND GROUND CONDUCTING ROUTES - An image forming apparatus including an image forming apparatus body, a cassette attaching section, a media cassette, a release portion, a first ground conducting route and a second ground conducting route is provided. The cassette attaching section includes a media supplying roller. The media cassette is removably installed in the cassette attaching section. The media cassette includes a loading plate, a pushing up member and a plate holding portion. The release portion engages the plate holding portion. The first ground conducting route conducts static electricity charged on the media and includes a conducting portion. The second ground conducting route conducts static electricity charged on the media when the media is conveyed by the media supplying roller. | 09-06-2012 |
20140205474 | HYDROGEN STORAGE CONTAINER - A hydrogen storage container that stores hydrogen gas using a hydrogen storage material capable of storing hydrogen gas includes: a hollow liner that stores the hydrogen gas and includes a liner opening portion into which the hydrogen gas is introduced; a hollow sub-tank disposed inside the liner to house the hydrogen storage material; a heat exchange pipe which is disposed inside the sub-tank and through which a heat exchange medium passes; a sub-tank support portion that supports an end portion of the sub-tank relative to the liner opening portion and supports an end portion of the heat exchange pipe; and a heat exchange medium passage that is formed to penetrate the sub-tank support portion and leads the heat exchange medium to the heat exchange pipe. | 07-24-2014 |
Takashi Kobayashi, Nirasaki City JP
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20120252226 | PLASMA PROCESSING METHOD - A plasma processing method performs a plasma oxidation on a substrate, on which a trench is formed after an oxide film is formed, by using a plasma processing apparatus for plasma-processing an object by using microwave plasma. In the plasma processing method, the substrate is mounted on a mounting table to which an ion attraction high frequency voltage is applied, and the plasma oxidation is performed while applying the ion attraction high frequency voltage to the substrate. Further, a process gas used in the plasma oxidation is a mixture of a rare gas having smaller atomic weight than that of argon gas, and oxygen gas, and the plasma processing is performed at a pressure of 6.7 to 133 Pa in a depressurized chamber. | 10-04-2012 |
Takashi Kobayashi, Hitachinaka-Shi JP
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20130098274 | SAMPLE STAGE DEVICE - A sample stage device ( | 04-25-2013 |
Takashi Kobayashi, Yokkaichi-Shi JP
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20130235666 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACURING THE SAME - A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array in which a plurality of NAND cell units are arranged, the NAND cell units including a plurality of memory cells, and select gate transistors, the memory cell including a semiconductor layer, a gate insulating film, a charge accumulation layer, and a control gate; and a control circuit. The control circuit adjusts a write condition of each of the memory cells in accordance with write data to each of the memory cells and memory cells adjacent to the memory cells within the data to be written. | 09-12-2013 |
20150262680 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF - A nonvolatile semiconductor memory device includes: a memory cell array including a memory string having plural series-connected memory transistors; plural word lines disposed to be connected to the memory transistor in the memory string; plural bit lines electrically connected to an end of the memory string; and a control circuit. When performing a write operation on the memory cell array, the control circuit applies a first voltage to a selected word line selected from the plural word lines, applies a second voltage smaller than the first voltage to an unselected word line rendered unselected from the word lines. Before lowering a voltage applied to the unselected word line from the second voltage to a third voltage smaller than the second voltage, it lowers a voltage applied to the selected word line from the first voltage to a fourth voltage smaller than the first voltage. | 09-17-2015 |
Takashi Kobayashi, Kawasaki-Shi JP
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20140069556 | HIGH CARBON THIN STEEL SHEET AND METHOD FOR PRODUCING SAME - A high carbon steel sheet having a chemical composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol. Al: 0.08% or less, N: 0.02% or less, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the fraction of pro-eutectoid ferrite, among the ferrite, in the whole steel microstructure is 20% or more and less than 50%, the average grain size dc of the cementite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 0.50 to 1.5 μm, and the average grain size ds of the cementite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness satisfies ds/dc≦0.8. | 03-13-2014 |
20140076469 | HIGH CARBON THIN STEEL SHEET AND METHOD FOR PRODUCING SAME - A steel sheet having a composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol.Al: 0.08% or less, N: 0.02% or less, and Fe and incidental impurities, and a microstructure composed of ferrite and cementite, wherein each of the average grain size ds of the ferrite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness and the average grain size dc of the ferrite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 20 to 40 μm, 0.80≦ds/dc≦1.20 is satisfied, the average grain size of the cementite is 1.0 μm or more, the spheroidizing ratio is 90% or more, and 90% or more of cementite is present inside ferrite grains. | 03-20-2014 |
20150299830 | STEEL SHEET FOR SOFT-NITRIDING AND METHOD FOR MANUFACTURING THE SAME - A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; Nb: 0.005% or more to 0.025% or less; and N: 0.005% or less, on a mass percent basis, such that C and Nb satisfy 0.10≦Nb/C≦0.30 (where C and Nb are respective contents of the elements (by mass %)), wherein balance comprises Fe and incidental impurities, and a microstructure that is a complex-phase microstructure containing ferrite and pearlite, and the microstructure having a ratio of a microstructure other than the ferrite and the pearlite of 1% or less, and the microstructure having a ratio of polygonal ferrite in the ferrite of less than 50%. | 10-22-2015 |
Takashi Kobayashi, Chiba JP
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20140077663 | PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS AND RADIO TIMEPIECE - A piezoelectric vibrator including a package having a base member, a lid member forming a cavity with respect to the base member, and a piezoelectric vibrating piece mounted on a mount surface and housed inside the cavity, in which the piezoelectric vibrating piece has a pair of vibrating arm portions and a base portion cantilever-supporting base end portions of the pair of vibrating arm portions and being mounted on the mount surface, a concave portion for avoiding contact with respect to tip portions when the vibrating arm portions are displaced in a thickness direction is formed on the mount surface, contact portions contacted by main surfaces of the vibrating arm portions facing the mount surface, and clearance portions for avoiding contact with at least one edge-line portion of two edge-line portions where the main surface intersects with two side surfaces. | 03-20-2014 |
20140078870 | PIEZOELECTRIC VIBRATING PIECE, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS AND RADIO TIMEPIECE - A piezoelectric vibrating piece, a piezoelectric vibrator, an oscillator, an electronic apparatus and a radio timepiece capable of reducing the size while suppressing reduction of rigidity and having excellent vibration characteristics. The piezoelectric vibrating piece includes a pair of vibrating arm portions in parallel to each other, a base portion integrally fixing base end portions of the pair of vibrating arm portions in a length direction, groove portions on main surfaces of the pair of vibrating arm portions and extending along the length direction, where each of the groove portions includes a first groove portion near a tip portion end of the vibrating arm portions and a second groove portion near the base end portion side of the vibrating arm portions with respect to the first groove portion, and the second groove portion is offset in a −X axis direction with respect to the first groove portion. | 03-20-2014 |
20140111065 | PIEZOELECTRIC VIBRATING STRIP, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC DEVICE, AND RADIO TIMEPIECE - A piezoelectric vibrating strip includes a pair of vibrating arm portions in parallel with a central axis therebetween, and a base portion integrally cantilevering base end portions of the pair of vibrating arm portions in a length direction. Each of the pair of vibrating arm portions has a first groove portion and a second groove portion in a main face, the first groove portion being placed closer to a leading end portion in the length direction of the vibrating arm portions and having a groove width along a width direction orthogonal to the length direction and a thickness direction of the vibrating arm portion. The second groove portion is closer to the base end portion than the first groove portion and has a groove width along the width direction. The groove width ratio of the second groove portion to the first groove portion is between 0.4 and 1.0. | 04-24-2014 |
Takashi Kobayashi, Kashiwazaki-Shi JP
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20130326865 | METHOD FOR PRODUCING ELECTRODE AND METHOD FOR PRODUCING BATTERY - According to one embodiment, a method for producing an electrode, includes applying tensile force. The electrode includes a strip current collector, a current collector exposed portion, and an active material-containing layer. In the applying tensile force, arranging a strip electrode plate on a roller including a step portion and a recessed portion such that the current collector exposed portion is positioned on the step portion and the active material-containing layer is positioned on the recessed portion, and then applying tensile force to the strip electrode plate in a longitudinal direction of the strip electrode plate. | 12-12-2013 |
20130344374 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY - According to one embodiment, there is provided a nonaqueous electrolyte secondary battery. A positive electrode current collector comprises a coated portion on which the positive electrode active material layer is provided and a noncoated portion which is adjacent to the coated portion in a direction parallel to the first surface, in which the positive electrode active material layer is not present. A density of the positive electrode active material layer is within a range of 3.1 g/cc to 3.4 g/cc. A ratio W1/W2 of a mass of the coated portion per unit area (W1) to a mass of the noncoated portion per unit area (W2) is from 0.997 to 1. | 12-26-2013 |
20130344389 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY - According to one embodiment, there is provided a nonaqueous electrolyte secondary battery. A negative electrode current collector comprises a coated portion on which the negative electrode active material layer is provided and a noncoated portion which is adjacent to the coated portion, in which the negative electrode active material layer is not present. A density of the negative electrode active material layer is within a range of 2.1 g/cc to 2.4 g/cc. A ratio W | 12-26-2013 |
Takashi Kobayashi, Matsumoto-Shi JP
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20130286440 | Print Data Generation Device, Printing Method, and Program - When a skewness of brightness of a print target image is a first skewness, print data is generated such that an ink amount of a metallic ink is a first amount. When the skewness of brightness is a second skewness that is larger than the first skewness, a print data is generated such that the ink amount is a second amount that is larger than the first amount. | 10-31-2013 |
20150224789 | PRINTING CONTROL APPARATUS, PRINTING CONTROL METHOD, AND PROGRAM - A printing control apparatus controls ejection of a pigment ink, supplied from a cartridge, from a nozzle row having a plurality of nozzles. Time information regarding an elapsed time of the cartridge is obtained, and used nozzles, in the nozzle row, that eject the pigment ink are reduced based on the time information of the cartridge. | 08-13-2015 |
Takashi Kobayashi, Minokamo-Shi JP
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20130273323 | INTERIOR PART FOR VEHICLE AND METHOD FOR TREATING EDGE THEREOF - An interior part for a vehicle includes a body member including protrusions and depressions, a first member having a flat sheet shape and attached to one side of the body member, and a second member having a flat sheet shape and attached to another side of the body member. An edge of the side end of the first member is fixed with an edge of the side end of the second member in a convex manner via an edge of a side end of the body member. The edges of the first member, the body member and the second member are processed by a chamfer treatment to form an inclined portion outwardly inclined from the second member toward the first member. According to the interior part, unpleasant feeling to be brought to a user when touching the inclined portion is drastically restricted. | 10-17-2013 |
20150099089 | VEHICLE INTERIOR MEMBER - A deck board includes a main body member provided with recesses and protrusions, a top base material joined to a top side of the main body member, and a bottom base material joined to a back side of the main body member. A peripheral end of the bottom base material includes a folded portion, and a peripheral end of the top base material includes a folded portion. The folded portion of the bottom base material and the folded portion of the top base material are crushed and integrated into a tip joint, and the tip joint is joined to a side wall of the bottom base material. | 04-09-2015 |
Takashi Kobayashi, Machida JP
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20130245975 | DRAWING DEVICE, DRAWING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM - A drawing device includes a memory and a processor coupled to the memory. The processor executes a process including measuring voltages of planes of layers in a laminated circuit board and drawing the voltages of the planes that are measured on a graph having a voltage set on one axis and having a layer set on the other axis. | 09-19-2013 |
Takashi Kobayashi, Sagamihara-Shi JP
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20140197179 | HIGH PRESSURE GAS CONTAINER AND MANUFACTURING METHOD FOR HIGH PRESSURE GAS CONTAINER - This invention is a high pressure gas container into which a high pressure gas is charged, includes: a liner into which the high pressure gas is charged; and a reinforcing sleeve that envelops an outer surface of the liner, wherein the liner includes: a cylindrical liner trunk portion; and a pair of liner shoulder portions formed by reducing a diameter of respective end portions of the liner trunk portion, and the reinforcing sleeve includes: a sleeve trunk portion fitted to the liner trunk portion; and a pair of sleeve shoulder portions that extend from the sleeve trunk portion so as to contact the respective liner shoulder portions. | 07-17-2014 |
Takashi Kobayashi, Suzaka-Shi JP
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20140168465 | IMAGE PROCESSING APPARATUS AND METHOD FOR CONTROLLING THE SAME - An image processing apparatus capable of obtaining a gamma characteristic (non-linear conversion characteristic) giving consideration to a difference between light and dark parts in a subject region is provided along with a method for controlling the same. A value indicating the difference between light and dark parts in the subject region is calculated based on image data. Then, by interpolating multiple basic gamma characteristics using the value indicating the difference between light and dark parts, a gamma characteristic depending on the difference between light and dark parts is generated and applied to the image data. | 06-19-2014 |
Takashi Kobayashi, Mie-Ken JP
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20150060985 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, nonvolatile semiconductor memory device includes: a semiconductor layer; element regions separated the semiconductor layer, the element regions; and a memory cell including a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate electrode provided above the element regions, a peripheral region including a resistance element including a resistance element layer provided above the semiconductor layer via a first insulating film, a dummy layer provided on a part of the resistance element layer via a second insulating film, a third insulating film provided on the resistance element layer at a first distance from the dummy layer, a fourth insulating film provided on the semiconductor layer at a second distance from the resistance element layer, and a contact piercing the third insulating film, and connected to the resistance element layer, the first distance being shorter than the second distance. | 03-05-2015 |
Takashi Kobayashi, Nagano JP
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20150231816 | BLOW MOLDING MACHINE - A blow molding machine | 08-20-2015 |
Takashi Kobayashi, Kamisu-Shi JP
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20150273440 | VISIBLE LIGHT-RESPONSIVE PHOTOCATALYTIC NANOPARTICLE DISPERSION LIQUID, METHOD FOR PRODUCING SAME, AND MEMBER HAVING PHOTOCATALYTIC THIN FILM ON SURFACE - It is possible to obtain a visible light-responsive photocatalytic nanoparticle dispersion liquid containing copper-containing titanium oxide nanoparticles by subjecting an aqueous peroxotitanic acid solution containing a copper compound to hydrothermal reaction for crystallizing the aqueous solution by means of heat under high pressure. The visible light-responsive photocatalytic nanoparticle dispersion liquid thus obtained exhibits excellent dispersion stability of titanium oxide nanoparticles within a water-based dispersion medium even when left in a cold and dark indoor area for a long period of time, expresses photocatalytic activity even in visible light (400 to 800 nm) alone, and can easily create a photocatalytic thin film which is extremely transparent and exhibits excellent durability, and in which the state of copper coordination when exposed to heat or ultraviolet rays is stable and cannot be easily modified. | 10-01-2015 |
20160111559 | SOLAR CELL DEGRADATION CONTROL-COATING LIQUID AND THIN FILM AND SOLAR CELL DEGRADATION CONTROL METHOD - Provided is a solar cell degradation control-cover glass having a thin film that is formed by applying to a cover glass back surface a coating liquid comprising either an aqueous solution of a water-soluble compound of at least one metal selected from silicon, aluminum, zirconium, tin and zinc or a fine particle dispersion liquid of an oxide of such metal. | 04-21-2016 |
Takashi Kobayashi, Kawasaki-Shi, Kanagawa JP
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20150354034 | STEEL SHEET FOR SOFT-NITRIDING AND METHOD FOR MANUFACTURING THE SAME - A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; V: 0.03% or more to 0.30% or less; and N: 0.005% or less, on a mass percent basis, wherein a ratio of amount of solute V to the V content (amount of solute V/V content) is more than 0.50, and balance comprises Fe and incidental impurities, and a complex-phase microstructure containing ferrite and pearlite. | 12-10-2015 |
Takashi Kobayashi US
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20160125972 | RESIN COMPOSITION, PREPREG, RESIN SHEET AND METAL FOIL-CLAD LAMINATE - The resin composition of the present invention comprises a cyanate ester compound (A) obtained by cyanating a modified naphthalene formaldehyde resin, and an epoxy resin (B). | 05-05-2016 |