Patent application number | Description | Published |
20100019798 | SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT USING THE SPIN MOSFET - It is made possible to provide a spin MOSFET that can minimize the increase in production costs and can perform both spin injection writing and reading. A spin MOSFET includes: a substrate that has a semiconductor region of a first conductivity type; first and second ferromagnetic stacked films that are formed at a distance from each other on the semiconductor region, and each have the same stacked structure comprising a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer stacked in this order, the second ferromagnetic stacked film having a film-plane area different from that of the first ferromagnetic stacked film; a gate insulating film that is formed on a portion of the semiconductor region, the portion being located between the first ferromagnetic stacked film and the second ferromagnetic stacked film; and a gate that is formed on the gate insulating film. | 01-28-2010 |
20100244897 | SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT - A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower face and the upper face; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on an upper face of the second ferromagnetic layer; a third ferromagnetic layer provided on an upper face of the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween. | 09-30-2010 |
20110194342 | NONVOLATILE MEMORY CIRCUIT USING SPIN MOS TRANSISTORS - Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS transistor and a second n-channel spin MOS transistor are connected in series, gates of the first p-channel MOS transistor and the first n-channel spin MOS transistor are connected, gates of the second p-channel MOS transistor and the second n-channel spin MOS transistor are connected, a first n-channel transistor includes a drain connected to a drain of the first p-channel transistor and the gate of the second p-channel transistor, a second n-channel transistor includes a drain connected to a drain of the second p-channel transistor and the gate of the first p-channel transistor, and gates of the first and second n-channel transistors are connected. | 08-11-2011 |
20110228596 | SPIN MEMORY AND SPIN TRANSISTOR - Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current. | 09-22-2011 |
20120019283 | SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT - A spin MOSFET includes: a first ferromagnetic layer provided on a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower and upper faces; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on the second ferromagnetic layer; a third ferromagnetic layer provided on the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween. | 01-26-2012 |
20120074984 | LOOK-UP TABLE CIRCUITS AND FIELD PROGRAMMABLE GATE ARRAY - A look-up table circuit according to an embodiment includes: a variable resistance circuit including variable resistance devices and selecting a variable resistance device from the variable resistance devices based on an input signal; a reference circuit having a resistance value between the largest resistance value and the smallest resistance value of the variable resistance circuit; a first n-channel MOSFET including a source connected to a terminal of the variable resistance circuit and a gate connected to a drain; a second n-channel MOSFET including a source connected to a terminal of the reference circuit and a gate connected to the gate of the first n-channel MOSFET; a first current supply circuit to supply a current to the variable resistance circuit; a second current supply circuit to supply a current to the reference circuit; and a comparator comparing voltages at a first input terminal and a second input terminal. | 03-29-2012 |
20120117354 | STORAGE DEVICE IN WHICH FORWARDING-FUNCTION-EQUIPPED MEMORY NODES ARE MUTUALLY CONNECTED AND DATA PROCESSING METHOD - According to one embodiment, a storage device includes a plurality of memory nodes. Each of memory nodes includes a plurality of input ports, a plurality of output ports, a selector, a packet controller and a memory. The selector outputs a packet input to the input port to one of the output ports. The packet controller controls the selector. The memory stores data. The memory nodes are mutually connected at the input ports and the output ports. The memory node has an address that is determined by its physical position. The packet controller switches the output port that outputs the packet based on information including at least a destination address of the packet and an address of the memory node having the packet controller when receiving a packet that is not addressed to the memory node having the packet controller. | 05-10-2012 |
20120119274 | NONVOLATILE MEMORY CIRCUIT USING SPIN MOS TRANSISTORS - Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS transistor and a second n-channel spin MOS transistor are connected in series, gates of the first p-channel MOS transistor and the first n-channel spin MOS transistor are connected, gates of the second p-channel MOS transistor and the second n-channel spin MOS transistor are connected, a first n-channel transistor includes a drain connected to a drain of the first p-channel transistor and the gate of the second p-channel transistor, a second n-channel transistor includes a drain connected to a drain of the second p-channel transistor and the gate of the first p-channel transistor, and gates of the first and second n-channel transistors are connected. | 05-17-2012 |
20120168838 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes: a semiconductor layer; source and drain regions in the semiconductor layer; a magnetic metal semiconductor compound film on each of the source and drain regions, the magnetic metal semiconductor compound film including the same semiconductor as a semiconductor of the semiconductor layer and a magnetic metal; a gate insulating film on the semiconductor layer between the source region and the drain region; a gate electrode on the gate insulating film; a gate sidewall formed at a side portion of the gate electrode, the gate sidewall being made of an insulating material; a film stack formed on the magnetic metal semiconductor compound film on each of the source and drain regions, the film stack including a magnetic layer; and an oxide layer formed on the gate sidewall, the oxide layer containing the same element as an element in the film stack. | 07-05-2012 |
20120218802 | CONTENT ADDRESSABLE MEMORY - One embodiment provides a content addressable memory, including: a pair of spin MOSFETs including: a first spin MOSFET whose magnetization state is set in accordance with stored data; and a second spin MOSFET whose magnetization state is set in accordance with the stored data, the second spin MOSFET being connected in parallel with the first spin MOSFET; a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data; and a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET. | 08-30-2012 |
20120223762 | PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIRCUIT INCLUDING THE PASS TRANSISTOR CIRCUIT - A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET. | 09-06-2012 |
20120250399 | MEMORY CIRCUIT USING SPIN MOSFETS, PATH TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, SWITCHING BOX CIRCUIT, SWITCHING BLOCK CIRCUIT, AND FIELD PROGRAMMABLE GATE ARRAY - A memory circuit according to an embodiment includes: a first transistor including a first source/drain electrode, a second source/drain electrode, and a first gate electrode; a second transistor including a third source/drain electrode connected to the second source/drain electrode, a fourth source/drain electrode, and a second gate electrode; a third transistor and a fourth transistor forming an inverter circuit, the third transistor including a fifth source/drain electrode, a sixth source/drain electrode, and a third gate electrode connected to the second source/drain electrode, the fourth transistor including a seventh source/drain electrode connected to the sixth source/drain electrode, an eighth source/drain electrode, and a fourth gate electrode connected to the second source/drain electrode; and an output terminal connected to the sixth source/drain electrode. At least one of the third transistor and the fourth transistor is a spin MOSFET, and an output of the inverter circuit is sent from the output terminal. | 10-04-2012 |
20130042055 | MEMORY SYSTEM INCLUDING KEY-VALUE STORE - According to one embodiment, a memory system including a key-value store containing key-value data as a pair of a key and a value corresponding to the key, includes a first memory, a control circuit and a second memory. The first memory is configured to contain a data area for storing data, and a table area containing the key-value data. The control circuit is configured to perform write and read to the first memory by addressing, and execute a request based on the key-value store. The second memory is configured to store the key-value data in accordance with an instruction from the control circuit. The control circuit performs a set operation by using the key-value data stored in the first memory, and the key-value data stored in the second memory. | 02-14-2013 |
20130042060 | MEMORY SYSTEM INCLUDING KEY-VALUE STORE - According to one embodiment, a memory system including a key-value store containing key-value data as a pair of a key and a value corresponding to the key, includes an interface, a memory block, an address acquisition circuit and a controller. The interface receives a data write/read request or a request based on the key-value store. The memory block has a data area for storing data and a metadata table containing the key-value data. The address acquisition circuit acquires an address in response to input of the key. The controller executes the data write/read request for the memory block, and outputs the address acquired to the memory block and executes the request based on the key-value store. The controller outputs the value corresponding to the key via the interface. | 02-14-2013 |
20130069440 | INCOMING CIRCUIT USING MAGNETIC RESONANT COUPLING - According to one embodiment, an incoming circuit using a magnetic resonant coupling includes an incoming coil which receives magnetic field energy transmitted from an outgoing coil under conditions of energy power transmission by the magnetic resonant coupling, and an incoming circuit which comprises a variable capacitor and a rectifier circuit and which outputs, as a direct-current voltage, the magnetic field energy received by the incoming coil. A capacitance of the variable capacitor is automatically controlled to change in an analog form along with the change of the direct-current voltage and to keep the transmission efficiency of the magnetic field energy at a fixed value by directly feeding back the direct-current voltage to the variable capacitor. | 03-21-2013 |
20130075843 | SPIN TRANSISTOR AND MEMORY - A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film. | 03-28-2013 |
20130076550 | ANALOG-TO-DIGITAL CONVERTER - According to an embodiment, an analog-to-digital converter includes a voltage generating unit, and a plurality of comparators. The voltage generating unit is configured to divide a reference voltage by a plurality of variable resistors to generate a plurality of comparative voltages. Each of the plurality of comparator is configured to compare any one of the plurality of comparative voltages with an analog input voltage and output a digital signal based on a result of a comparison between the comparative voltage and the analog input voltage. Each of the plurality of variable resistors includes a plurality of variable resistive elements that are connected in series, and each of the plurality of variable resistive elements has a resistance value that is variably set according to an external signal. | 03-28-2013 |
20130076551 | ANALOG-TO-DIGITAL CONVERTER - According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal. | 03-28-2013 |
20140097474 | SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT - A spin MOSFET includes a first ferromagnetic layer having a fixed magnetization direction, a first tunnel barrier, a second ferromagnetic layer having a variable magnetization direction, and a nonmagnetic semiconductor layer provided in that order on a substrate. The nonmagnetic semiconductor layer has lower and upper faces and a side faces serving as a channel. A third ferromagnetic layer having a fixed magnetization direction is provided on the upper face of the nonmagnetic semiconductor layer, wherein the magnetization direction of each of the first to third ferromagnetic layers is in parallel or antiparallel to a direction from the third ferromagnetic layer to the first ferromagnetic layer. A nonmagnetic layer is provided on the third ferromagnetic layer, and a gate insulating film and gate electrode are provided in that order on the side face of the nonmagnetic semiconductor layer. | 04-10-2014 |
20140189217 | SEMICONDUCTOR STORAGE DEVICE - According to an embodiment, a semiconductor storage device includes a first storage unit, a read control unit, a second storage unit, and a write control unit. The first storage unit is configured to store data supplied from a host device. The read control unit is configured to perform control of reading the data in accordance with a read request. The second storage unit is configured to store a logical address used for reading the data from the first storage unit by the read control unit. The write control unit is configured to perform control of adding the stored logical address to the data and write the resulting data into the first storage unit in a case where a size of the data requested to be written into the first storage unit by the host device is smaller than a threshold. | 07-03-2014 |
20140293692 | Memory System, Control System and Method of Predicting Lifetime - A memory system according to an embodiment may have an integration unit and a prediction unit. The integration unit may detect substrate current flowing through a substrate of a non-volatile memory when the non-volatile memory with a memory cell, which has binary or multivalued being the binary or more is written/erased. The integration unit may records an integration value of the detected substrate current into a storage. The prediction unit may predict a lifetime of the non-volatile memory based on the integration value which is recorded on the storage. | 10-02-2014 |
20140372671 | AUTHENTICATION DEVICE, AUTHENTICATION METHOD, AND COMPUTER PROGRAM PRODUCT - According to an embodiment, an authentication device includes an acquiring unit, a predicting unit, and an authenticating unit. The acquiring unit is configured to acquire performance information of a first device that is a device to be authenticated. The predicting unit is configured to predict performance information of a second device that is a device being a reference for authentication according to a change with time from initial performance information. The authenticating unit is configured to perform an authentication process of determining whether or not the first device falls into the second device on a basis of a degree of agreement between the performance information acquired by the acquiring unit and the performance information predicted by the predicting unit. | 12-18-2014 |
20150074341 | MEMORY SYSTEM INCLUDING KEY-VALUE STORE - According to one embodiment, a memory system including a key-value store containing key-value data as a pair of a key and a value corresponding to the key, includes an interface, a memory block, an address acquisition circuit and a controller. The interface receives a data write/read request or a request based on the key-value store. The memory block has a data area for storing data and a metadata table containing the key-value data. The address acquisition circuit acquires an address in response to input of the key. The controller executes the data write/read request for the memory block, and outputs the address acquired to the memory block and executes the request based on the key-value store. The controller outputs the value corresponding to the key via the interface. | 03-12-2015 |