Patent application number | Description | Published |
20090117493 | Anti-Reflective Coating Forming Composition Containing Reaction Product of Isocyanuric Acid Compound with Benzoic Acid Compound - There is provided anti-reflective coating forming composition containing a reaction product of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc. | 05-07-2009 |
20090317740 | Composition containing hydroxylated condensation resin for forming resist underlayer film - Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): | 12-24-2009 |
20100022089 | Method for manufacturing semiconductor device using quadruple-layer laminate - There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A). | 01-28-2010 |
20100279227 | Composition for forming underlayer coating for litography containing epoxy compound and carboxylic acid compound - There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound). | 11-04-2010 |
20110227056 | FORMING AGENT FOR GATE INSULATING FILM OF THIN FILM TRANSISTOR - It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor. | 09-22-2011 |
20110311915 | PHOTOSENSITIVE RESIST UNDERLAYER FILM FORMING COMPOSITION - A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C | 12-22-2011 |
20110318907 | COMPOSITION FOR FORMING GATE INSULATING FILM FOR THIN-FILM TRANSISTOR - There is provided a novel composition for forming a gate insulating film taking into consideration also electrical characteristics after other processes such as wiring by irradiation with an ultraviolet ray and the like during the production of an organic transistor using a gate insulating film. A composition for forming a gate insulating film for a thin-film transistor comprising: a component (i): an oligomer compound or a polymer compound containing a repeating unit having a structure in which a nitrogen atom of a triazine-trione ring is bonded to a nitrogen atom of another triazine-trione ring through a hydroxyalkylene group; and a component (ii): a compound having two or more blocked isocyanate groups in one molecule thereof. | 12-29-2011 |
20120156598 | PHOTOSENSITIVE RESIN COMPOSITION FOR MICROLENS - There is provided a photosensitive resin composition for a microlens. A photosensitive resin composition for a microlens, comprising a component (A), a component (B) and a component (C), wherein the component (A) is a polymer having a maleimide structural unit of Formula (1), the component (B) is a cross-linking agent, and the component (C) is a photosensitizing agent. | 06-21-2012 |
20120172557 | PHOTOSENSITIVE RESIN COMPOSITION CONTAINING COPOLYMER - There is provided a photosensitive resin composition having desired properties. A photosensitive resin composition comprising: a component (A) that is a copolymer including a structural unit of Formula (1) and at least one structural unit of Formula (2), and a component (B) that is a photosensitizer: | 07-05-2012 |
20120251950 | COMPOSITION FOR FORMING PHOTOSENSITIVE RESIST UNDERLAYER FILM - A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): | 10-04-2012 |
20120288795 | COMPOSITION FOR FORMATION OF PHOTOSENSITIVE RESIST UNDERLAYER FILM AND METHOD FOR FORMATION OF RESIST PATTERN - A composition for forming a photosensitive resist underlayer film and a method for forming a resist pattern. The composition for forming a photosensitive resist underlayer film includes a polymer having a structural unit of Formula (1), a compound having at least two vinyl ether groups, a photo-acid generator; and a solvent: | 11-15-2012 |
20130216956 | MONOLAYER OR MULTILAYER FORMING COMPOSITION - There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): | 08-22-2013 |
20130245152 | PHOTOSENSITIVE RESIN COMPOSITION FOR MICROLENSES - There is provided a photosensitive resin composition for microlenses. A photosensitive resin composition for microlenses including a component (A), a component (B) and a solvent. The component (A): a copolymer having a maleimide structural unit of Formula (1) and a repeating structural unit of Formula (2). The component (B): a photosensitizer | 09-19-2013 |
20140045119 | PHOTOSENSITIVE ORGANIC PARTICLES - A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group. | 02-13-2014 |
20140170855 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE - A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): | 06-19-2014 |
20140370182 | ORGANIC SILICON COMPOUND AND SILANE COUPLING AGENT CONTAINING THE SAME - There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): | 12-18-2014 |
20150017791 | FILM-FORMING COMPOSITION AND ION IMPLANTATION METHOD - There is provided an ion implantation method, a composition for forming an ion implantation film and a resist underlayer film-forming composition. An ion implantation method including the steps of: forming a film by applying a film-forming composition containing a compound including an element in group 13, group 14, group 15, or group 16 and an organic solvent onto a substrate and baking the film-forming composition; and implanting impurity ions into the substrate from above through the film and introducing the element in group 13, group 14, group 15, or group 16 in the film into the substrate. The film-forming composition is a film-forming composition for ion implantation containing a compound including an element in group 13, group 14, group 15, or group 16, and an organic solvent. In addition, the underlayer film-forming composition contains a compound having at least two borate ester groups. | 01-15-2015 |
20150267159 | LIGHT-DEGRADABLE MATERIAL, SUBSTRATE, AND METHOD FOR PATTERNING THE SUBSTRATE - There is provided a new material that can form a finer pattern and can be applied to adsorption/adhesion control of various cell species, proteins, viruses, and the like without the limitation of the light source. A light-degradable material comprising: a moiety that is capable of bonding to a surface of a substrate through a siloxane bond; and a structural unit of Formula (2-a) and/or Formula (2-b): | 09-24-2015 |