Takafumi Kikuchi, Higashiyamato JP
Takafumi Kikuchi, Higashiyamato JP
Patent application number | Description | Published |
---|---|---|
20090189268 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Of three chips ( | 07-30-2009 |
20100015760 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 01-21-2010 |
20100258948 | Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device - A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes. | 10-14-2010 |
20110133336 | Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device - A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes. | 06-09-2011 |
20110171780 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 07-14-2011 |
20130320571 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 12-05-2013 |
20140117541 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 05-01-2014 |
20150108639 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 04-23-2015 |