Patent application number | Description | Published |
20100221657 | RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD OF FORMING RESIST PATTERN USING THE SAME - There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond. | 09-02-2010 |
20100266951 | RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN - There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded. | 10-21-2010 |
20110059404 | RESIST UNDERLAYER FILM FORMING COMPOSITION AND FORMING METHOD OF RESIST PATTERN USING THE SAME - It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent. | 03-10-2011 |
20110230058 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM WITH REDUCED OUTGASSING - There is provided underlayer films of high-energy radiation resists that are applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation. A composition for forming an underlayer film of a high-energy radiation resist, the composition comprising a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained preferably in a film at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring. | 09-22-2011 |
20120040291 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY - There is provided a compositions of resist underlayer films for EUV lithography that is used in a production process of devices employing EUV lithography, that reduces adverse effects caused by EUV, and that has a beneficial effect on the formation of a favorable resist pattern; and a method for forming resist patterns using the composition of resist underlayer films for EUV lithography. A composition for forming a resist underlayer film for an EUV lithography process used in production of a semiconductor device, comprising a novolac resin containing a halogen atom. The novolac resin may include a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination thereof. The halogen atom may be a bromine atom or an iodine atom. The novolac resin may be a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid; or a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid. | 02-16-2012 |
20120251955 | COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM - There is provided a composition for forming a resist underlayer film for electron beam or EUV lithography that is used in a device manufacture process using EUV lithography, reduces the adverse effects caused by an electron beam or EUV, and is effective for the formation of a good resist pattern and a resist pattern formation method using the composition for forming a resist underlayer film for lithography. A composition for forming a resist underlayer film for electron beam or EUV lithography, comprising: a polymer having a repeating unit structure of Formula (1): | 10-04-2012 |
20130209940 | COMPOSITION FOR FORMING RESIST OVERLAYER FILM FOR EUV LITHOGRAPHY - There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group. | 08-15-2013 |
20130230809 | RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME - There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond. | 09-05-2013 |
20140004465 | RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME | 01-02-2014 |
20140099791 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY - A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device. | 04-10-2014 |
20140170567 | RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER - There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): | 06-19-2014 |
20140255847 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY - A resist overlayer film composition for lithography from which a resist overlayer film is formed. A resist overlayer film forming composition including a benzene compound having at least one amino group. A resist may be an EUV resist or an electron beam resist. The benzene compound may have at least one amino group and at least one alkyl group, one or two amino groups and one to four alkyl groups, or may be a compound of Formula (1): | 09-11-2014 |
20140287589 | ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION AND RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING THE SAME - It is aimed to enhance adhesiveness between a resist pattern formed on a resist underlayer film and to reduce an undercut of the resist pattern. An additive for a resist underlayer film-forming composition, including: a polymer having a structural unit of Formula (1): | 09-25-2014 |
20150031206 | COMPOSITION FOR FORMING HIGHLY ADHESIVE RESIST UNDERLAYER FILM - A composition for forming a resist underlayer film for lithography, including a polymer having a repeating structural unit of Formula (1): | 01-29-2015 |
20150087155 | RESIST UNDERLAYER FILM-FORMING COMPOSITION - A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: | 03-26-2015 |