Patent application number | Description | Published |
20080290360 | Silicon-Based Light Emitting Diode Using Side Reflecting Mirror - A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror. | 11-27-2008 |
20080296593 | Silicon Light Emitting Device - Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid. | 12-04-2008 |
20080299736 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device including a high-k dielectric thin layer formed using an interfacial reaction. The method includes the steps of: forming an oxide layer on a silicon substrate; depositing a metal layer on the oxide layer to form a metal silicate layer using an interfacial reaction between the oxide layer and the metal layer; forming a metal gate by etching the metal silicate layer and the metal layer; and forming a lightly doped drain (LDD) region and source and drain regions in the silicon substrate after forming the metal gate. In this method, a semiconductor device having high quality and performance can be manufactured by a simpler process at lower cost. | 12-04-2008 |
20080303018 | Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same - Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics. | 12-11-2008 |
20090001401 | Semiconductor Light Emitting Diode - Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode. | 01-01-2009 |
20090032836 | SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer. | 02-05-2009 |
20090101928 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode. As a result, the adhesion between the substrate and the transparent electrode or between the upper doping layer and the transparent electrode is enhanced and the layer separation from the transparent electrode is prevented, thereby improving efficiency of the light emitting diode and increasing the production yield. | 04-23-2009 |
20090152596 | SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure. | 06-18-2009 |
20090152597 | BIOSENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor. | 06-18-2009 |
20090152598 | BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities. | 06-18-2009 |
20090242913 | SILICON BASED LIGHT EMITTING DIODE - Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure. | 10-01-2009 |
20100048002 | SILICON NITRIDE LAYER FOR LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE USING THE SAME, AND METHOD OF FORMING SILICON NITRIDE LAYER FOR LIGHT EMITTING DEVICE - Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region. | 02-25-2010 |
20100090197 | METHOD OF MANUFACTURING SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND SEMICONDUCTOR NANOWIRE SENSOR DEVICE MANUFACTURED ACCORDING TO THE METHOD - Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns. | 04-15-2010 |
20100119733 | METHOD OF IMMOBILIZING ACTIVE MATERIAL ON SURFACE OF SUBSTRATE - Provided is a method of immobilizing an active material on a surface of a substrate. The method including cleaning a substrate, functionalizing a surface of the substrate using a hydroxyl group, functionalizing the surface of the substrate at atmospheric pressure using a vaporized organic silane compound, and immobilizing an active material to an end of the surface of the substrate. Therefore, since evacuation or the use of carrier gas is not necessary, a uniform, high-density, single-molecular, silane compound film can be formed inexpensively, simply, and reproducibly, and an active material can be immobilized to the single-molecular silane compound film. | 05-13-2010 |
20100270530 | SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad. | 10-28-2010 |
20100283031 | BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME - A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost. | 11-11-2010 |
20110053290 | LIGHT ADDRESSING BIOSENSOR CHIP AND METHOD OF DRIVING THE SAME - Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip. | 03-03-2011 |
20110068015 | BIOSENSOR AND METHOD OF DRIVING THE SAME - Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved. | 03-24-2011 |
20110068326 | SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode. | 03-24-2011 |
20110151139 | METHOD FOR SELECTIVELY FUNCTIONALIZING NON-MODIFIED SOLID SURFACE AND METHOD FOR IMMOBILIZING ACTIVE MATERIAL ON THE FUNCTIONALIZED SOLID SURFACE - A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer. | 06-23-2011 |
20110180856 | SENSING DEVICE - Provided is a sensing device, which includes a reactive material layer ( | 07-28-2011 |
20110194976 | DETECTION DEVICE AND SYSTEM - A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET. | 08-11-2011 |
20120015467 | BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME - A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost. | 01-19-2012 |
20120141665 | METHOD OF AND APPARATUS FOR FORMING A METAL PATTERN - Provided are methods of and apparatuses for forming a metal pattern. In the method, an initiator and a metal pattern are sequentially combined on a previously-formed bonding agent pattern improving adhesion and/or junction properties between the substrate and the metal. The bonding agent pattern may be formed using a reverse offset printing method. The metal pattern may be formed using an electroless electrochemical plating method. The metal pattern can be formed with improved uniformity in thickness and planar area. | 06-07-2012 |
20120258882 | METHOD FOR QUANTITATIVELY DETECTING BIOMOLECULES - Provided is a method for quantitatively detecting biomolecules with high sensitivity for a short time by using nanoparticles and a metal deposition method in an immuno-detection using a well-type plastic substrate. | 10-11-2012 |
20130056713 | ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - The inventive concept provides organic light emitting diodes and methods of fabricating the same. The method may include forming an insulating layer on a substrate, coating a metal ink on the insulating layer, thermally treating the substrate to permeate the metal ink into the insulating layer, thereby forming an assistant electrode layer the insulating layer and the metal ink embedded in the insulating layer, and sequentially forming a first electrode, an organic light emitting layer, a second electrode on the assistant electrode layer. | 03-07-2013 |
20130331295 | LIGHT ADDRESSING BIOSENSOR CHIP AND METHOD OF DRIVING THE SAME - Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip. | 12-12-2013 |
20140002881 | SELF-POWERED ELECTROCHROMIC DEVICES USING A SILICON SOLAR CELL | 01-02-2014 |