| Patent application number | Description | Published |
|---|
| 20090072352 | GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD - A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm | 03-19-2009 |
| 20090256240 | METHOD FOR PRODUCING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS - The present invention discloses a production method for group III nitride ingots or pieces such as wafers. To solve the coloration problem in the wafers grown by the ammonothermal method, the present invention composed of the following steps; growth of group III nitride ingots by the ammonothermal method, slicing of the ingots into wafers, annealing of the wafers in a manner that avoids dissociation or decomposition of the wafers. This annealing process is effective to improve transparency of the wafers and/or otherwise remove contaminants from wafers. | 10-15-2009 |
| 20090309105 | Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth - The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device. | 12-17-2009 |
| 20090315151 | Method for testing group III-nitride wafers and group III-nitride wafers with test data - The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control. | 12-24-2009 |
| 20100068118 | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal - The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. | 03-18-2010 |
| 20100095882 | REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enables obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device. | 04-22-2010 |
| 20100126411 | METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH - The present invention discloses methods to produce large quantities of polycrystalline GaN for use in the ammonothermal growth of group III-nitride material. High production rates of GaN can be produced in a hydride vapor phase growth system. One drawback to enhanced polycrystalline growth is the increased incorporation of impurities, such as oxygen. A new reactor design using non-oxide material that reduces impurity concentrations is disclosed. Purification of remaining source material after an ammonothermal growth is also disclosed. The methods described produce sufficient quantities of polycrystalline GaN source material for the ammonothermal growth of group III-nitride material. | 05-27-2010 |
| 20100275837 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 11-04-2010 |
| 20100285657 | GROWTH REACTOR FOR GALLIUM-NITRIDE CRYSTALS USING AMMONIA AND HYDROGEN CHLORIDE - The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HYPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HYPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth. | 11-11-2010 |
| 20100303704 | METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN A MIXTURE OF SUPERCRITICAL AMMONIA AND NITROGEN, AND GROUP III-NITRIDE CRYSTALS GROWN THEREBY - A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH | 12-02-2010 |
| 20120304917 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 12-06-2012 |
| 20120327559 | ULTRACAPACITORS USING TRANSITION METAL NITRIDE-CONTAINING ELECTRODE AND TRANSITION METAL NITRIDE - The present invention discloses a new construction of ultracapacitor utilizing particles of transition metal nitride having negligible amount of halide impurities. The construction is expected to attain high specific energy density by using transition metal nitride particles and higher reliability by avoiding potential corrosion of metal components with halide impurities. The transition metal nitride particles are preferably synthesized by basic ammonothermal process, which utilizes supercritical ammonia with alkali metal mineralizers. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can over complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles. | 12-27-2012 |
| 20120328883 | SYNTHESIS METHOD OF TRANSITION METAL NITRIDE AND TRANSITION METAL NITRIDE - The present invention discloses a method of synthesizing transition metal nitride by using supercritical ammonia. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can over complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles. | 12-27-2012 |
| 20130015492 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 01-17-2013 |
| 20130022528 | GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD - A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm | 01-24-2013 |
| 20130119399 | METHOD FOR TESTING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS WITH TEST DATA - The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control. | 05-16-2013 |
| 20130135005 | METHOD FOR TESTING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS WITH TEST DATA - The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control. | 05-30-2013 |
| 20130206057 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 08-15-2013 |
| 20130216845 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 08-22-2013 |
| 20140054589 | BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD - The present invention discloses a semi-insulating wafer of Ga | 02-27-2014 |
| 20140054595 | COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE - The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of Ga | 02-27-2014 |
| 20140061662 | GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD - The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers. | 03-06-2014 |
| 20140065796 | GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD - The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers. | 03-06-2014 |
| 20140084297 | GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD - The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface. | 03-27-2014 |
| 20140087113 | METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth. | 03-27-2014 |
| 20140087209 | METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth. | 03-27-2014 |
| 20140174340 | METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH - The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically the future seeds are optimized if chosen from an area of relieved stress, on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to itnprove structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device. | 06-26-2014 |
| 20140190403 | METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AN AUTOCLAVE - A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals. | 07-10-2014 |
| 20140209925 | METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH - The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device. | 07-31-2014 |
| 20140326175 | REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enable obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device. | 11-06-2014 |
| 20150014817 | ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT - The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 10 | 01-15-2015 |
| 20150014818 | ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT - The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 10 | 01-15-2015 |
| 20150017789 | ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT - The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 10 | 01-15-2015 |
| 20150075421 | GROWTH REACTOR FOR GALLIUM-NITRIDE CRYSTALS USING AMMONIA AND HYDROGEN CHLORIDE - The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HVPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HVPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth. | 03-19-2015 |
