Patent application number | Description | Published |
20120241735 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 09-27-2012 |
20130126868 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR ELEMENT - In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable. | 05-23-2013 |
20130228775 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM - One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×10 | 09-05-2013 |
20140175438 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 06-26-2014 |
20140206133 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive. | 07-24-2014 |
20140374755 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 12-25-2014 |
20150102341 | SEMICONDUCTOR DEVICE - To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment. | 04-16-2015 |
20150372023 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND ELECTRONIC DEVICE - To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid. | 12-24-2015 |