Patent application number | Description | Published |
20090261066 | APPARATUS AND METHOD FOR DRY ETCHING - The present invention herein provides an apparatus and a method for dry etching, which can solve such a problem that an object to be processed undergoes cracking during the etching procedures due to the heat deformation thereof and thermal shocks, possibly encountered when subjecting, to dry etching procedures, the object having a high thermal expansion coefficient. A dry etching apparatus is provided with an electrode structure having a convex-shaped surface, the convex-shape is one concentric with the cross section of the electrode structure and the height thereof falls within the range of from 0.2 to 1.0 mm. An object consisting of a material having a thermal expansion coefficient of not less than 30×10 | 10-22-2009 |
20090277873 | DRY ETCHING METHOD - The object of the present invention is to provide a dry etching method which permits the reduction of the amount of any etching product formed during the etching process to thus improve the in-plane etching uniformity with respect to an object to be etched. The dry etching method comprises the steps of providing an electrode equipped with an electrode-presser member which at least comprises a surface layer composed of an yttrium-containing oxide and which is disposed on the peripheral region of the upper surface of the electrode, placing a substrate on the electrode and then subjecting the substrate to dry etching, while preventing the formation of any etching product at the peripheral region of the electrode. | 11-12-2009 |
20100062606 | DRY ETCHING METHOD - The object of the present invention is to provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. In a dry etching method according to the present invention, a substrate in which a semiconductor layer is formed on an insulating layer formed of a silicon oxide is prepared, a through-hole is formed in the semiconductor layer, and a resin film is formed on side walls of the through-hole and a recessed portion while forming the recessed portion in the insulating layer by etching an area in which the insulating layer is exposed via the through-hole. By forming the resin film on the side wall of the recessed portion, the side wall of the recessed portion is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed. Furthermore, by forming the resin film on the side wall of the through-hole, the side wall of the through-hole is protected from the collision of ions in plasma and a hole shape of the through-hole is prevented from fluctuating. | 03-11-2010 |
20100133233 | DRY ETCHING METHOD - A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided. | 06-03-2010 |
20100133235 | DRY ETCHING APPARATUS AND DRY ETCHING METHOD - A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more. | 06-03-2010 |
20100219158 | METHOD FOR DRY ETCHING INTERLAYER INSULATING FILM - A method for dry etching an interlayer insulating film with an ArF resist or KrF resist thereon comprises dry etching fine features into the interlayer insulating film with an etching gas in such a manner as to form a polymer film on the ArF or KrF resist from the etching gas, wherein the etching gas is introduced under a pressure of 0.5 Pa or less, and wherein a Fourier transform infrared spectrum of the polymer film includes a C—F bond peak at about 1200 cm | 09-02-2010 |
20110117742 | PLASMA PROCESSING METHOD - [Object] To provide a plasma processing method capable of maintaining a uniform in-plane distribution from the start to the end of etching by optimizing etching conditions. | 05-19-2011 |
20110180388 | Plasma Processing Method and Plasma Processing Apparatus - [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity. | 07-28-2011 |
20130023062 | THIN FILM MANUFACTURING APPARATUS, THIN FILM MANUFACTURING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In an apparatus for manufacturing a ceramic thin film by employing a thermal CVD method, an internal jig, which is provided with a heat radiation material film on the surface, is provided at a position that faces a substrate (S) on which the film is to be formed. The thin film and a semiconductor device are manufactured using such apparatus. | 01-24-2013 |
20130216710 | THIN FILM FORMING METHOD AND THIN FILM FORMING APPARATUS - [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness. | 08-22-2013 |
20130224381 | THIN-FILM FORMING METHOD AND THIN-FILM FORMING APPARATUS - In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S | 08-29-2013 |
20140102879 | METHOD OF MANUFACTURING VARIABLE RESISTANCE ELEMENT AND APPARATUS FOR MANUFACTURING THE SAME - [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. | 04-17-2014 |
20140166966 | Resistance Change Element and Method for Producing the Same - To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element | 06-19-2014 |
20140361864 | Resistance Change Device, and Method for Producing Same - To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device | 12-11-2014 |
20150056373 | DEPOSITION METHOD AND DEPOSITION APPARATUS - [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface. | 02-26-2015 |