Susiti

Alexander Susiti, Stadelach AT

Patent application number	Description	Published
20130249058	SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY - A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×10	09-26-2013
20150123247	SEMICONDUCTOR COMPONENT HAVING A DOPANT REGION FORMED BY A DOPANT COMPOSED OF AN OXYGEN / VACANCY COMPLEX - A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×10	05-07-2015

Alexander Susiti, Stadelbach AT

Patent application number	Description	Published
20130307127	Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device - A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.	11-21-2013
20140291816	SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A CONTINUOUS SILICATE GLASS STRUCTURE - A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.	10-02-2014
20150348776	Method of Manufacturing a Semiconductor Device with a Continuous Silicate Glass Structure - A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.	12-03-2015

Alexander Susiti, Villach AT

Patent application number	Description	Published
20150371858	Method for Treating a Semiconductor Wafer - A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.	12-24-2015