Sung-Yeon
Sung Yeon Cho, Yongin-Si KR
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20140331894 | WATER INSOLUBLE GEL COMPOSITION AND METHOD FOR PREPARING SAME - The present invention provides a method for preparing a water insoluble gel composition comprising: mixing a water soluble polysaccharide, an epoxy cross-linking agent, an alkaline compound and a solvent; and drying the thus obtained mixture at 1 to 30° C. under vacuum to remove the solvent, and a water insoluble gel composition. | 11-13-2014 |
Sung Yeon Heo, Seoul KR
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20150273402 | CARBON DIOXIDE SEPARATION MEMBRANE COMPRISING POROUS HOLLOW TITANIUM DIOXIDE NANOPARTICLE AND MANUFACTURING METHOD THEREOF - Provided is a carbon dioxide separation membrane. The carbon dioxide separation membrane includes porous hollow titanium dioxide nanoparticles whose surfaces are modified with aminosilane having high affinity with carbon dioxide and a crosslinkable functional group. The carbon dioxide separation membrane provides both improved selectivity and improved permeability. In addition, the carbon dioxide separation membrane includes a copolymer matrix having excellent mechanical properties. Thus, it is possible to provide a carbon dioxide separation membrane having excellent selectivity and permeability as well as improved physical strength, chemical stability and temperature resistance. | 10-01-2015 |
Sung Yeon Hwang, Uijeongtbu-Si-Gyeonggi-Do KR
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20140043848 | BACKLIGHT DEVICE AND DISPLAY DEVICE INCLUDING THE SAME - A backlight device according to an exemplary embodiment of the present invention includes, wherein a light guide plate including a convex portion and a recess portion, a lower cover including a lateral surface cover part positioned adjacent to the convex portion, the lower cover surrounding the light guide plate, and a fixing member positioned between the light guide plate and the lateral surface cover part of the lower cover, in which the lateral cover part includes an opening, and the fixing member includes a first hook surrounding the convex portion and a second hook protruding through the opening of the lateral surface cover part. | 02-13-2014 |
Sung Yeon Kim, Gyeonggi-Do KR
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20130126780 | Mg-Ti-Al Composite Metal Hydroxide Having a Laminated Structure, and a Production Method Therefore - The present invention relates to a novel Mg—Ti—Al composite metal hydroxide and to production method therefor. Mg—Ti—Al composite hydroxide particles can be obtained by subjecting a solution containing a magnesium salt and a titanium salt to ultrasound processing and carrying out a high-temperature and high-pressure reaction with a solution containing an aluminum salt in the proportions of the metal elements comprised in the Mg—Ti—Al composite metal hydroxide, thereby giving the advantageous effects that the halogen capturing ability is excellent and, when used in a polymer, degradation and earily-staining prevention properties and transparency are outstanding. | 05-23-2013 |
Sung Yeon Kim, Pocheon-Si KR
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20130178150 | HUB, RELAY NODE, AND NODE FOR RECONFIGURING ACTIVE STATE POSITION IN WIRELESS BODY AREA NETWORK (WBAN), AND COMMUNICATION METHOD THEREOF - Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node. | 07-11-2013 |
20140273813 | HUB, RELAY NODE, AND NODE FOR RECONFIGURING ACTIVE STATE POSITION IN WIRELESS BODY AREA NETWORK (WBAN), AND COMMUNICATION METHOD THEREOF - Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node. | 09-18-2014 |
Sung Yeon Kim, Seoul KR
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20150043402 | RECEPTION NODE AND TRANSMISSION NODE FOR SAVING ENERGY OF RECEPTION NODE, AND COMMUNICATION METHOD THEREOF - A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period. | 02-12-2015 |
Sung Yeon Lee, Icheon-Si Gyeonggi-Do KR
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20140293686 | SEMICONDUCTOR INTERGRATED CIRCUIT AND OPERATING METHOD THEREOF - A semiconductor integrated circuit includes a variable resistive element, a current supply unit and a control signal generating unit. The resistance of the variable resistive element is changed depending on current flowing therethrough. The current supply unit controls the current in response to a control signal. The control signal generating unit generates the control signal by sensing the change in the resistance of the variable resistive element. | 10-02-2014 |
Sung Yeon Song, Chungcheongbuk-Do KR
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20140186357 | METHOD FOR TREATMENT OF DEGENERATIVE BRAIN DISORDERS COMPRISING INHIBITOR OF SUM01 AND BACE1 INTERACTION AS AN ACTIVE INGREDIENT - A treatment method for degenerative brain disorders using a pharmaceutically effective dose of the inhibitor of SUMO1 (small ubiquitin-like modifier 1) and BACE1 (β-secretase) interaction, or the inhibitor of SUMO1 expression or activation is provided. More specifically, it was confirmed that SUMO1 increased BACE1 accumulation and Aβ generation, that is SUMO1 regulated BACE1 accumulation by interacting with BACE1, and BACE1 dileucine motif was involved in SUMO1-mediated BACE1 accumulation. In addition, SUMO1 protein induced autophagy in H4 cells, while SUMO1 depletion reduced LC3-II level. It was further confirmed that SUMO1 and LC3 were co-localized in the cortex of APP transgenic mice. As shown herein, a pharmaceutically effective dose of the inhibitor of SUMO1 and BACE1 interaction or the inhibitor of SUMO1 expression can be effectively used for the treatment of degenerative brain disorders. | 07-03-2014 |
Sung-Yeon Jang, Daego KR
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20100021794 | METHOD OF FABRICATING CARBON MATERIAL, CARBON MATERIAL PREPARED BY THE METHOD, CELL MATERIAL AND APPARATUS USING THE SAME - Disclosed is a method for fabricating a carbon material, by which carbon fibers or carbon tubes, particularly branched carbon fibers or carbon tubes, are obtained via a so-called self-growing process without using external carbon sources. The carbon material obtained by the method has a large specific surface area and further includes a metal catalyst, and thus may be used in cell materials for a fuel cell or secondary battery, hydrogen storage devices, capacitors, solar cells, display panel or the like. | 01-28-2010 |
Sung-Yeon Jang, Seoul KR
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20090056808 | DYE-SENSITIZED SOLAR CELL WITH METAL OXIDE LAYER CONTAINING METAL OXIDE NANOPARTICLES PRODUCED BY ELECTROSPNNING AND METHOD FOR MANUFACTURING SAME - A dye-sensitized solar cell having improved photoelectric conversion characteristic includes a metal oxide layer having dye-adsorbed metal oxide nanoparticles, wherein the metal oxide nanoparticles are formed by electrospinning a mixed solution of a metal oxide precursor and a polymer into ultrafine composite fibers, and thermally compressing and sintering the ultrafine composite fibers. | 03-05-2009 |
20100015526 | Molecular Heterostructures for Energy Conversion and Storage - The present invention provides for a metal-molecule heterostructure comprising (a) a plurality of metal, semimetallic or semiconducting nanoparticles, and (b) a plurality of electrically conductive organic molecules interspersed among the nanoparticles. The metal-molecular heterostructure is useful in a device, such as a thermoelectric energy converter, battery or capacitor. | 01-21-2010 |
Sung-Yeon Lee, Gyeonggi-Do KR
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20100277975 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a plurality of memory cells configured to correspond to each of a plurality of word lines for storing data; a plurality of reference memory cells configured to include first and second magnetic memory devices, whose lower electrodes are commonly connected to each other, to generate a reference current corresponding to each of the memory cells; and a sense amplification unit configured to sense and amplify the reference current and a data current corresponding to a memory cell connected to an activated word line among the word lines. | 11-04-2010 |
20100309718 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a current flowing through the first and the second driving lines, and a current controlling block configured to control a supply current provided to the first and second driving lines in response to temperature information in a writing operation. | 12-09-2010 |
20110280062 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a current flowing through the first and the second driving lines, and a current controlling block configured to control a supply current provided to the first and second driving lines in response to temperature information in a writing operation. | 11-17-2011 |
Sung-Yeon Lee, Seoul KR
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20100273454 | APPARATUS AND METHOD FOR MANAGING MESSAGE IN MOBILE TERMINAL - An apparatus and a method for managing a message in a mobile terminal are provided. In the method, meta data of messages stored in the terminal are analyzed and items for filtering a message are generated. A user is allowed to select at least one item. Messages corresponding to the selected item are displayed. | 10-28-2010 |
20110157966 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device comprises a memory cell configured to store or output data in a magneto-resistance device in response to a write current applied to a bit line and a source line. A voltage detector is configured to sense potentials loaded in the bit line and the source line. A write current controller configured to control activation of a write control signal in response to an output of the voltage detector, and a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal. | 06-30-2011 |
20120140574 | NON-VOLATILE MEMORY DEVICE AND SENSING METHOD THEREOF - A non-volatile memory device is disclosed, which performs a sensing operation using a current. The non-volatile memory device includes a cell array including one or more unit cells, configured to read or write data, a current-voltage converter configured to convert a sensing current corresponding to data stored in the unit cell into a sensing voltage, and perform a precharge operation of the sensing voltage upon receiving the sensing current in response to a current driving signal at an activation time point of a word line of the cell array, and a sense-amp configured to compare the sensing voltage with a predetermined reference voltage, and amplify the compared result. | 06-07-2012 |
20120147655 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING THE SAME - A non-volatile memory device and a method for programming the same are disclosed. The method for programming the non-volatile memory device includes generating a simultaneous write current based on a program address in such a manner that bit line write cells corresponding to memory cells coupled to the same bit line from among memory cells to be programmed can be simultaneously programmed, and providing the simultaneous write current to the bit line write cells by simultaneously enabling the bit line write cells. | 06-14-2012 |
20140036582 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device comprises a memory cell configured to store or output data in a magneto-resistance device in response to a write current applied to a bit line and a source line. A voltage detector is configured to sense potentials loaded in the bit line and the source line. A write current controller configured to control activation of a write control signal in response to an output of the voltage detector, and a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal. | 02-06-2014 |
20140119094 | NONVOLATILE MEMORY DEVICE USING RESISTANCE MATERIAL AND METHOD OF DRIVING THE NONVOLATILE MEMORY DEVICE - Provided is a nonvolatile memory device using a resistance material and a method of driving the nonvolatile memory device. The nonvolatile memory device comprises a resistive memory cell which stores multiple bits; a sensing node; a clamping unit coupled between the resistive memory cell and the sensing node and provides a clamping bias to the resistive memory cell; a compensation unit which provides a compensation current to the sensing node; a sense amplifier coupled to the sensing node and senses a change in a level of the sensing node; and an encoder which codes an output value of the sense amplifier in response to a first clock signal. The clamping bias varies over time. The compensation current is constant during a read period. | 05-01-2014 |
20140119095 | NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTANCE MATERIAL AND METHOD FOR DRIVING THE SAME - The nonvolatile memory device using a variable resistance material and a method for driving the same are provided. A first clamping unit connected between a resistance memory cell and a first sensing node to provide a first clamping bias to the resistance memory cell. The first clamping bias changes over time. A first compensation unit provides a compensation current to the first sensing node. A first sense amplifier is connected to the first sensing node to sense a level change of the first sensing node. In response to if first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts. In response to second data that is different from the first data stored in the resistance memory cell, the output value of the first sense amplifier transitions to the different state after a second amount of time that is different from the first amount of time from the time point from where the first clamping bias starts. | 05-01-2014 |
20140160831 | Nonvolatile Memory Devices Using Variable Resistive Elements and Related Driving Methods Thereof - Driving methods of a nonvolatile memory device are provided. The driving method includes providing a start pulse adjusted based on a previous write operation to a resistive memory cell to write data, verifying whether the data has accurately been written using the start pulse, and executing a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result. Related nonvolatile memory devices are also provided. | 06-12-2014 |
20140198556 | NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT AND MEMORY SYSTEM HAVING THE SAME - A nonvolatile memory device, which has an improved read reliability through a refresh operation, and a memory system, are provided. The nonvolatile memory device includes a resistive memory cell, a reference resistor corresponding to the resistive memory cell, a reference sense amplifier electrically connected to the reference resistor and configured to change a transition time of an output value of the reference resistor, and a refresh request signal generator configured to output the refresh request signal for the resistive memory cell when the transition time of an output value of the reference resistor is in a preset refresh requiring period. | 07-17-2014 |
20140211538 | RESISTIVE MEMORY DEVICE COMPRISING SELECTIVELY DISABLED WRITE DRIVER - A nonvolatile memory device comprises a resistive memory cell, a write driver configured to write data to the resistive memory cell during a write period comprising a plurality of loops, and a sense amplifier configured to verify whether the data is correctly written to the resistive memory cell in each of the loops. Where the sense amplifier verifies that the data is correctly written in a k-th loop among the loops, the write driver is disabled from a (k+1)-th loop to an end of the write period. | 07-31-2014 |