Sung, US
Alexander Sung, Powell, OH US
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20150286117 | PORTABLE ELECTRONIC DEVICE MOUNTING SYSTEM - The present invention provides an improved portable electronic device mounting system for secure mounting of a camera or any other suitable portable electronic device. Generally described, the present invention includes a mounting system including a base mount, a device mount to which the device can be attached, and a tether. The mounting system is designed such that the device can be detached from the base, while being connected to the mount through a tether when sufficient force is applied. This precludes the potential loss of the device or possible harm to the user during any physical activity. | 10-08-2015 |
An-Amin Jason Sung, Warren, NJ US
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20100211184 | Magnetic implants and methods for treating an oropharyngeal condition - Magnetic devices and implantation methods are provided for use in the treatment of obstructive sleep apnea. The devices include a sheet-like element having ferromagnetic qualities. The device may also include a permanent magnet attached to the sheet-like element by magnetic forces. The devices are implanted in soft tissue surrounding the airway and in tissue space beneath the pharyngeal wall to exert forces on and/or change the shape of the soft tissue. The magnetic devices may also include a bladder containing a magnetorheological fluid that stiffens soft tissue when exposed to a magnetic field. | 08-19-2010 |
20130118505 | MAGNETIC IMPLANTS AND METHODS FOR TREATING AN OROPHARYNGEAL CONDITION - Magnetic devices and implantation methods are provided for use in the treatment of obstructive sleep apnea. The devices include a sheet-like element having ferromagnetic qualities. The device may also include a permanent magnet attached to the sheet-like element by magnetic forces. The devices are implanted in soft tissue surrounding the airway and in tissue space beneath the pharyngeal wall to exert forces on and/or change the shape of the soft tissue. The magnetic devices may also include a bladder containing a magnetorheological fluid that stiffens soft tissue when exposed to a magnetic field. | 05-16-2013 |
20130319427 | SYSTEMS AND METHODS TO TREAT UPPER PHARYNGEAL AIRWAY OF OBSTRUCTIVE SLEEP APNEA PATIENTS - Obstructive Sleep Apnea (OSA) may be caused by a collapse of the pharyngeal wall as a result of increasing negative airway pressure. This invention is directed to systems and methods to resist collapse of the pharyngeal wall by minimally invasive upper pharyngeal airway surgery. | 12-05-2013 |
An-Min Jason Sung, Warren, NJ US
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20080281357 | Looped tissue-grasping device - A looped tissue-grasping device includes a looped suture having two ends swaged to a needle and a plurality of tissue-grasping elements provided on the looped suture. The device is used for joining bodily tissue in surgical applications and wound repair. The configuration of the tissue-grasping elements permit movement of the suture through the tissue in the direction the needle is pulled and, prevent slippage or movement of the suture in a direction opposite to the direction of movement of the needle. | 11-13-2008 |
20090299407 | Methods For Using Looped Tissue-Grasping Devices - A method for repairing friable tissue having a defect therein includes providing a looped barbed suture having a plurality of barbs extending outwardly therefrom along at least a portion of a length thereof, and having first and second ends, first and second end portions and a middle portion therebetween. The first and second ends are fixedly coupled to a single needle, and the plurality of barbs extends outwardly away from the needle. The steps further include placing the looped barbed suture around an outer surface of the friable tissue in a spaced apart configuration and so as to extend across the defect, passing the needle through the friable tissue and around the middle portion of the looped barbed suture one or more times at the middle portion, and removing the needle from the looped barbed suture. | 12-03-2009 |
20130092178 | Surgical wound closure device - A surgical wound closure device including a substrate having a proximal surface and a distal surface; a drape having a proximal surface and a distal surface, and being disposed proximally to said substrate; and an adhesive layer having a proximal surface and a distal surface; said drape being disposed releasably adherently to said distal surface of said adhesive layer. Also provided is a surgical procedure including the steps of providing a surgical wound closure device positioning the proximal surface of said adhesive layer on a patient; separating said substrate from said drape and adhesive layer to expose said distal surface of said drape; making a surgical incision through said drape; performing a surgical procedure; removing said drape from said adhesive layer to expose said distal surface of said adhesive layer; aligning said substrate and said adhesive layer; and adhering said proximal surface of said substrate to said adhesive layer. | 04-18-2013 |
20140031788 | RIGID REINFORCING EXOSKELETAL SLEEVE FOR DELIVERY OF FLOWABLE BIOCOMPATIBLE MATERIALS - Exoskeletal devices or sleeves that can be used with the delivery tube of an applicator device to help dispense fluids, typically flowable biocompatible materials such as hemostatic agents, adhesives, or sealants, onto specific sites in the human body for a medical reason are disclosed. | 01-30-2014 |
20140257242 | ALL IN ONE ANTIMICROBIAL DRESSING FOR CATHETER COVERAGE - We have disclosed dressing devices that combine the functions of coverage of a catheter insertion site, fluid handling capacity for the puncture site of a catheter, and fixation of the catheter. More specifically, we have disclosed dressing devices comprising a base, a pad, and a dressing film, and the devices possess antimicrobial properties. We further disclose a method of making the disclosed dressing devices, a kit comprising the disclosed dressing devices and a catheter fastener means, a method of installing the dressing devices on a patient's skin over an indwelling catheter, and a method of replacing the disclosed dressing devices. | 09-11-2014 |
20140305443 | MAGNETIC IMPLANTS AND METHODS FOR TREATING AN OROPHARYNGEAL CONDITION - Magnetic devices and implantation methods are provided for use in the treatment of obstructive sleep apnea. The devices include a sheet-like element having ferromagnetic qualities. The device may also include a permanent magnet attached to the sheet-like element by magnetic forces. The devices are implanted in soft tissue surrounding the airway and in tissue space beneath the pharyngeal wall to exert forces on and/or change the shape of the soft tissue. The magnetic devices may also include a bladder containing a magnetorheological fluid that stiffens soft tissue when exposed to a magnetic field. | 10-16-2014 |
20150250463 | Methods and Devices for Forming Biomedical Coatings Using Variable Mixing Ratios of Multi-Part Compositions - The present invention relates devices capable of continuous and simultaneous expression of components of a multi-part biomedical composition with variable mixing ratios. The device has at least two syringes that contain the inter-reactive components of the multi-part biomedical composition. At least the barrel of the first syringe has a first retention compartment having a cross-sectional area dimension that is larger than the cross-sectional area of a second retention compartment. The first piston has a cross-sectional dimension that matches the inside cross-sectional dimension of the small dimensioned retention compartment, while a ring-shaped gasket is located within the large dimensioned retention compartment and has an outside cross-sectional dimension that matches an interior dimension of the large dimension retention compartment. | 09-10-2015 |
Chih-Ta Star Sung US
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20150352879 | ELECTRONIC APPLARATUS AND METHOD FOR ASSISTING INSTRUMENT PLAYING - There is a method using an electrical device assisting users playing at least one instrument. It is able to display the music scores, which acquire a file comprising all kind of music score messages. The method is also able to detect the users' movements and shows the corresponding actions. In addition, there is also an electrical device that combines this method | 12-10-2015 |
Ching-Hwa Sung, New York, NY US
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20090104166 | STIMULATING NEURITE OUTGROWTH USING TCTEX-1-RELATED POLYPEPTIDES - A method of stimulating neurite outgrowth in a subject may include administering to the subject a formulation that includes a tctex-1-related polypeptide that stimulates neurite outgrowth in vitro. | 04-23-2009 |
20120183512 | TCTEX-1 REGULATORY SEQUENCE AS STEM CELL MARKER - The disclosure relates to an isolated regulatory sequence for Tctex-1 that is transcriptionally active in adult neural progenitor and stem cells, including Type 1, Type 2 and Type 3 progenitors, as well as during development. The disclosure also relates to a method for selectively expressing a genetic sequence in neural progenitor cells. The disclosure of inserting and expressing a specific sequence in these cells allows marking, identification, sorting, tracking, and manipulating neural progenitor and stem cells. | 07-19-2012 |
Chun-Yung Sung, Hopewell Junction, NY US
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20110042687 | GRAPHENE GROWTH ON A CARBON-CONTAINING SEMICONDUCTOR LAYER - A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm. | 02-24-2011 |
C. Oscar Sung, Sylvania, OH US
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20100275653 | System and Method for Controlling Temperature in a Forehearth - Systems and methods are provided for controlling temperature in a glass forehearth. In one implementation, a system includes at least one burner disposed in said forehearth, a manifold coupled to said burner, a combustion fuel supply coupled to said burner, a combustion air blower for delivering ambient air under pressure to said manifold, and a controller coupled to said burner for controlling operation of said burner. The system may include a temperature sensor operatively coupled downstream of the blower for providing to the controller a temperature signal indicative of temperature of air delivered to the manifold by the blower. The controller may be responsive to the temperature signal for controlling operation of the burner as a function of current temperature of air fed to the manifold. Operation of the burner may also be controlled as a function of an average air temperature over a preceding time duration. | 11-04-2010 |
20120202161 | System and Method for Controlling Temperature in a Forehearth - Systems and methods are provided for controlling temperature in a glass forehearth. In one implementation, a system includes at least one burner disposed in said forehearth, a manifold coupled to said burner, a combustion fuel supply coupled to said burner, a combustion air blower for delivering ambient air under pressure to said manifold, and a controller coupled to said burner for controlling operation of said burner. The system may include a temperature sensor operatively coupled downstream of the blower for providing to the controller a temperature signal indicative of temperature of air delivered to the manifold by the blower. The controller may be responsive to the temperature signal for controlling operation of the burner as a function of current temperature of air fed to the manifold. Operation of the burner may also be controlled as a function of an average air temperature over a preceding time duration. | 08-09-2012 |
Cynthia Sung, Silver Spring, MD US
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20100272777 | OCULAR THERAPEUTIC AGENT DELIVERY DEVICES AND METHDOS FOR MAKING AND USING SUCH DEVICES - Ocular implant devices ( | 10-28-2010 |
Cynthia Rueyi Sung, Houston, TX US
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20140019450 | TEXT CHARACTERIZATION OF TRAJECTORIES - In one embodiment, processing location data collected with a mobile device having a positioning system includes accepting trajectory data representing successive geographic positions of the mobile device, where the positions are associated with corresponding times. A set of coordinate segments is determined to represent in the accepted trajectory data, such that the trajectory data represent repeated traversals of at least some of the coordinate segments. A textual characterization is associated with each segment of the determined set of coordinate segments, and then a representation of the trajectory data (for example, an electronic diary) is formed using the textual characterization of the coordinate segments and stored. In some examples, a text based query associated with the accepted trajectory data is accepted and a response is determined using the stored representation of the trajectory data. | 01-16-2014 |
Danny Sung, Arlington, TX US
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20140298484 | SYSTEMS, METHODS, AND COMPUTER PROGRAM PRODUCTS FOR MANAGING ACCESS CONTROL - Systems, methods, and computer program products are provided for managing access control. A first set of access control rules is stored in a memory of mobile communication device. The mobile communication device receives from a trusted server over a communication network a notification message indicating that an access control rule has been updated in a secure element. In response to receiving the notification message, the mobile communication device retrieves from the secure element a second set of access control rules including at least the access control rule that has been updated. The first set of access control rules is updated based on the second set of access control rules retrieved from the secure element. An applet stored on the secure element is accessed via an application running on the mobile communication device, in accordance with the updated first set of access control rules. | 10-02-2014 |
20150262164 | CLOUD-BASED SECURE STORAGE - System, methods, and computer program products are provided for interfacing with and providing a cloud-based secure storage. A payment system and procedure optionally stores security-critical information in a cloud-based secure store. Personalization data on the cloud-based secure store may be comprehensively managed by interfacing with a contactless front end (CLF) module in a near field communication (NFC) device and an interceptor. Non-security-critical information remains on the device. The processing time required to manage a payment transaction using Host-based Card Emulation (HCE) is minimized. User experience is improved. | 09-17-2015 |
Diane Sung, Liberty Township, OH US
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20100107829 | TORQUE LIMITING DRIVER - A torque limiting driver for applying up to a maximum torque to an associated driven member. In one embodiment, the driver includes first and second rotatable members with proximal and distal ends. A torque limiting assembly may be operatively coupling the distal end of the first rotatable member with the proximal end of the second rotatable member. The torque limiting assembly may include a plurality of torque limiting devices that are arranged to sequentially uncouple the second rotatable member from a torque load applied to the first rotatable member when the torque load exceeds the preselected maximum torque. | 05-06-2010 |
Dong-Jin Sung, Woonsocket, RI US
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20140001052 | Elimination of Crazing in Anodized Layers | 01-02-2014 |
Edward H. Sung, Cincinnatti, OH US
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20090186200 | 2,5-DI(METHOXYANILINO) TEREPHTHALIC ACID POLYMORPHS AND QUINACRIDONES REALIZED THEREFROM - 2,5-di(p-methoxyanilino)terephthalic acid crystal types I and II are made by controlling the pH during the recovery of the oxidized product of the condensation of dimethylsuccinyl succinate with p-methoxyaniline. The resulting 2,5-di(p-methoxyanilino)-terephthalic acid can be converted into 2,9-dimethoxyquinacridone or a solid solution thereof having controlled characteristics. | 07-23-2009 |
20130053568 | 2,5-DI(METHOXYANILINO) TEREPHTHALIC ACID POLYMORPHS AND QUINACRIDONES REALIZED THEREFROM2,5-DI(METHOXYANILINO) TEREPHTHALIC ACID POLYMORPHS AND QUINACRIDONES REALIZED THEREFROM - 2,5-di(p-methoxyanilino)terephthalic acid crystal types I and II are made by controlling the pH during the recovery of the oxidized product of the condensation of dimethylsuccinyl succinate with p-methoxyaniline. The resulting 2,5-di(p-methoxyanilino)-terephthalic acid can be converted into 2,9-dimethoxyquinacridone or a solid solution thereof having controlled characteristics. | 02-28-2013 |
Edward H. Sung, Cincinnati, OH US
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20080295739 | Process for Preparing Alpha Quinacridone Pigments - A process for preparing alpha phase quinacridone pigment by ring-closing 2,5-dianilino-terephthalic acid in concentrated polyphosphoric acid, treatment with at least one glycol, followed by striking to water and conditioning the resulting washed pigment with alcohol in the presence of alkali. The resulting pigment is considerably opaque and yellow versus gamma quinacridone of large particle size. | 12-04-2008 |
Elia Sung, Mundelein, IL US
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20150257975 | CONTAINER FOR MEDICAL IV BAG - A container for transporting an intravenous (IV) bag containing a hazardous substance, such as a chemotherapy drug, includes first and second sidewalls sealed together about a periphery to form an interior having first and second inner compartments, and a third sidewall sealed to a sidewall to form an outer compartment. The container may include features such as a tear strip along a portion of the sealed bottom edge, an access port to the first inner compartment located in at least one of the sidewalls, and biohazard labeling on an outer surface. The first inner compartment and the second inner compartment are contoured for retaining an IV bag and the associated port tubing in a usable position within the container, while the sidewalls are made of a transparent flexible material, and/or partly of a polymer material and partly of a paper material. | 09-17-2015 |
Ellick H. Sung, Seattle, WA US
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20080240324 | Independent Dispatch of Multiple Streaming Queues Via Reserved Time Slots - Technologies for scheduling the dispatch of multi-channel isochronous constant-rate data, such as real-time and/or streaming audio data, video data, or the like. The technologies include systems and methods that provide for the independent dispatch of such data from each of multiple channels such that data delays in one channel have no adverse affect on the dispatch of data from another channel. | 10-02-2008 |
20110319019 | CAPACITIVE BONDING OF DEVICES - Various embodiments relate to systems and methods that facilitate wireless device communications and configuration. A detection component identifies N devices that are coupled together via a biological medium, N being an integer, wherein the medium includes direct or indirect touching to a device or devices. After biological contact, a configuration component initiates a configuration between a subset of the devices. | 12-29-2011 |
20160073347 | Device Proximity Detection Implemented In Hardware - In embodiments of device proximity detection implemented in hardware, a computing device, such as a mobile phone, appliance device, or other electronic device can be implemented with wireless radio systems for wireless communications, and a wireless radio system receives a wireless signal. A computing device includes a radio controller of the wireless radio system, and the radio controller is implemented to detect an indication associated with the wireless signal, such as a byte pattern in the wireless signal and/or a signal strength of the signal. The radio controller can then determine that the indication of the wireless signal identifies the wireless signal as pertinent to an application executing on the computing device, and communicate an event notice to a signal manager that the wireless signal has been identified. The radio controller communicates event notices via a hardware interface that is implemented to interface the radio controller with the signal manager. | 03-10-2016 |
Eric Sung, Greensboro, NC US
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20140274199 | Noise Cancellation Apparatus and Method - A noise cancellation structure comprises a trans-impedance stage couple to an output of a mixer of a receiver and a noise cancellation stage connected in parallel with the trans-impedance stage, wherein the noise cancellation stage comprises a first adjustable resistor and a second adjustable resistor connected in series with the first adjustable resistor, wherein the first adjustable resistor and the second adjustable resistor are configured such that the first adjustable resistor has a first resistance variation portion and the second adjustable resistor has a second resistance variation portion equal to the first resistance variation in an opposite direction and a magnitude of the first resistance variation is so selected that differential mode second-order noise and common mode second-order noise cancel each other. | 09-18-2014 |
Eugene Sung, Powell, OH US
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20130053735 | UNSTRUCTURED AND STRUCTURED LIMB MANIPULATION APPARATUSES AND METHODS FOR USING THE SAME - Various embodiments provide assemblies for manipulating a user's limb with at least one inflatable member. The assemblies comprise a first pliable planar member and a second pliable planar member overlaid atop at least a portion of the first pliable planar member, such that a two ply configuration is provided. The two ply configuration itself comprises at least a distal and a proximal portion and at least one opening configured to accept at least a portion of the user's limb. The first and second pliable planar members combine to define at least one inflatable member, the inflatable member being at least a portion of at least one of the distal and proximal portions, the inflatable member being configured to be selectively inflatable so as to provide at least one inflation force upon the user's limb, such that the joint in the user's limb is manipulated. Associated methods are also provided. | 02-28-2013 |
20150286117 | PORTABLE ELECTRONIC DEVICE MOUNTING SYSTEM - The present invention provides an improved portable electronic device mounting system for secure mounting of a camera or any other suitable portable electronic device. Generally described, the present invention includes a mounting system including a base mount, a device mount to which the device can be attached, and a tether. The mounting system is designed such that the device can be detached from the base, while being connected to the mount through a tether when sufficient force is applied. This precludes the potential loss of the device or possible harm to the user during any physical activity. | 10-08-2015 |
Gi Suk Sung US
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20130235461 | DIFFUSER-INTEGRATED PRISM SHEET FOR BACKLIGHT UNITS AND METHOD OF MANUFACTURING THE SAME - A diffuser-integrated prism sheet is provided, in which diffuser layers are provided on the upper and lower surfaces of the prism sheet and prism-shaped protrusions are formed in the prism sheet. The prism sheet for backlight units includes a lower diffuser layer having a light diffusion structure, a lower layer formed on the lower diffuser layer, a first intermediate layer formed on the lower layer and having prism-shaped protrusions formed parallel to each other, a second intermediate layer formed on the first intermediate layer, an upper layer formed on the second intermediate layer, and an upper diffuser layer formed on the upper layer and having a light diffusion structure, wherein an air layer is formed between the lower surface of the second intermediate layer and the valleys of the prism-shaped protrusions of the first intermediate layer. | 09-12-2013 |
Hak-Joon Sung, Nashville, TN US
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20140107292 | COPOLYMERS AND METHODS OF USE THEREOF - Copolymers, such as block copolymers, having at least one block that is a random copolymer of ε-caprolactone and a-carboxy-s-caprolactone are disclosed. Also described are methods of using such copolymers, such as, for example, in medical devices. | 04-17-2014 |
20160024249 | Temperature-Responsive Polymer Compositions and Methods of Use - Embodiments of the invention include polymeric compounds that comprise a co-polymer microgel at least one bioactive agent, pharmaceutical compounds comprising compounds of the present invention, and methods for treating damaged tissue to a patient in need thereof by administering by injection an effect amount of the composition. | 01-28-2016 |
Henry H. Sung, New Canaan, CT US
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20160088164 | PUBLIC PAY SMART PHONE KIOSK - A coin operated public phone kiosk with a base member, a rectangular frame mounted on a base member, the frame comprising planar side standards, lower panels, and transparent upper panels, a phone assembly mounted to the rectangular frame above the lower panels. The phone assembly has a triangular shaped housing mounted to the frame with one side inclined inward into the frame, and a phone and keyboard mounted on the inclined side. A monitor is mounted on the kiosk frame adjacent at least one transparent upper planar panel. A cap assembly is mounted on the top of the rectangular frame and contains a solar battery. | 03-24-2016 |
Ho Dong Sung US
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20150121724 | SHOE - A shoe described herein includes an upper which surrounds the whole or one part of a foot of a user, a sole which is coupled to a lower portion of the upper, and a liner which is disposed on the sole. The liner of the shoe includes a bottom part which is disposed on the sole, one or more pairs of side surface supporting parts which are extended from a side edge of the bottom part and partially surround a side surface of the foot of the user, and one or more pairs of tightening parts which are formed at end portions of the one or more pairs of side surface supporting parts, respectively. The one or more pairs of tightening parts tighten the bottom part and the side surface supporting part to be in close contact with the foot of the user. | 05-07-2015 |
Ho-Nan Sung, Livingston, NJ US
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20120252939 | ASPHALTIC COMPOSITIONS, FILLED ASPHALTIC MATERIALS, AND METHODS FOR MAKING ASPHALTIC COMPOSITIONS - An asphaltic composition comprises base asphalt and a low molecular weight ethylene vinyl acetate copolymer. The low molecular weight ethylene vinyl acetate copolymer is present in an amount of from about 0.1 to about 5 wt. % of the base asphalt. | 10-04-2012 |
Jaeyun Sung, Seattle, WA US
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20150252429 | DETECTION OF BRAIN CANCER TYPES - The invention provides methods to identify various types of brain cancer tissue by comparing gene expression transcriptomes in tissue samples. A sequential method to discriminate among six different types of brain cancer is described. The invention relates to the field of markers for various types of brain cancer. More particularly, it relies on a sequential system for sorting individual cancer types. | 09-10-2015 |
Jason Sung, North Branford, CT US
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20090105655 | ACCESS PORT USING SHAPE ALTERING ANCHOR - The present disclosure provides access ports for use in surgery. The access ports possess a distal end which adopts an alternate shape upon the application of energy, thereby securing the access port to tissue. Alternatively, the access port may have barbs on a surface thereof which are formed upon the application of energy, thereby securing the access port to tissue. | 04-23-2009 |
20090105659 | ANCHORING CANNULA - The present disclosure provides cannulas for use in surgery. The cannulas possess an anchoring member at a portion thereof which adopts an alternate shape upon the application of energy, thereby securing the cannula to tissue. | 04-23-2009 |
20090105691 | ACCESS PORT USING SHAPE MEMORY ANCHOR - The present disclosure provides an anchoring cannula for use in surgery. The cannula possesses a shape memory polymer on the distal portion thereof which expands upon heating thereby securing the cannula in tissue. | 04-23-2009 |
20100234483 | FOAM SEAL FORMULATION - Molded polyurethane foams are provided which are useful as seals and have an ultimate elongation of at least about 300%. The foams may be formed from a first composition including a polyol, a chain extender, optional surfactants, catalysts, and blowing agents, in combination with a second composition including a polyol and an isocyanate. | 09-16-2010 |
Ja-Young Sung, Atllanta, GA US
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20110106718 | APPARATUS AND METHOD FOR MANAGING A SOCIAL NETWORK - A system that incorporates teachings of the present disclosure may include, for example, a system having a controller to collect one or more user-generated comments from each of a plurality of computing devices, detect a correlation in the one or more user-generated comments collected from the plurality of computing devices, and establish a social network between the plurality of computing devices according to the detected correlation. The one or more user-generated comments can be temporally associated with media content presented at the plurality of computing devices. Other embodiments are disclosed. | 05-05-2011 |
Ji Yong Sung US
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20150185557 | INDOOR/OUTDOOR LIQUID CRYSTAL DISPLAY APPARATUS INCLUDING LED LIGHT SOURCE FOR IMPROVING LUMINANCE - A liquid crystal display apparatus includes a backlight unit, a liquid crystal panel, a first luminance increasing film, and a second luminance increasing film. The backlight unit upwardly emits light. The liquid crystal panel is disposed on the backlight unit to receive the light, and displays an image using characteristics of liquid crystal. The first luminance increasing film is interposed between the backlight unit and the liquid crystal panel, and increases luminance using a first prism part formed along an X-axis direction. The second luminance increasing film is interposed between the backlight unit and the first luminance increasing film, increases luminance using a second prism part formed along a Y-axis direction, and has a refractivity greater than the first luminance increasing film. | 07-02-2015 |
Jong Hwan Sung, Ithaca, NY US
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20130157360 | BIOMIMETIC TISSUE SCAFFOLD AND METHODS OF MAKING AND USING SAME - Three-dimensional biomimetic tissue scaffolds, as well as methods of manufacture of these scaffolds. The method is fully customizable to create a biomimetic tissue scaffold with shapes, densities, and geometries similar or identical to the tissue it imitates. For example, physiologically realistic collagen/PEG villi created using the method are designed to have a high-aspect ratio and curvature similar to villi found in the human small intestine. Accordingly, the biomimetic tissue scaffolds serve as an improved in vitro model for a wide variety of physiological research, as well as pharmacological testing and drug, compound, and/or metabolite uptake by cells growing on the scaffold, among many other uses. | 06-20-2013 |
Joseph Jao Yiu Sung US
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20110269123 | MARKER FOR GASTRIC CANCER AND METHOD FOR DETECTING GASTRIC CANCER - In embodiments the expression or methylation of the PAX5 gene is used as a marker for the diagnosis and prognosis of gastric cancer. In further embodiments methods for detecting gastric cancer are disclosed as are methods for inhibiting the growth of gastric cancer. | 11-03-2011 |
Jung-Min C. Sung, Columbus, IN US
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20090084355 | System and method for metering fuel in a high pressure pump system - A system and method for metering fuel is provided which includes a fuel supply line and a metering valve in fluid connection with the fuel supply line to control a flow of fuel through the fuel supply line. The valve is movable into a closed position to block a primary flow of fuel and create a leakage fuel flow in the fuel supply line downstream of the metering valve. The system also includes a venturi apparatus fluidly coupled to the fuel supply line upstream of the metering valve. The venturi apparatus is further coupled to the fuel supply line downstream of the metering valve to direct the leakage fuel flow out of the fuel supply line. | 04-02-2009 |
Kimberly Sung, New York, NY US
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20110048962 | COMPOSITIONS, ELECTRODES, METHODS, AND SYSTEMS FOR WATER ELECTROLYSIS AND OTHER ELECTROCHEMICAL TECHNIQUES - Compositions, electrodes, systems, and/or methods for water electrolysis and other electrochemical techniques are provided. In some cases, the compositions, electrodes, systems, and/or methods are for electrolysis which can be used for energy storage, particularly in the area of energy conversion, and/or production of oxygen, hydrogen, and/or oxygen and/or hydrogen containing species. In some embodiments, the water for electrolysis comprises at least one impurity and/or at least one additive which has little or no substantially affect on the performance of the electrode. | 03-03-2011 |
20130118912 | Compositions, Electrodes, Methods, and Systems for Water Electrolysis and Other Electrochemical Techniques - Compositions, electrodes, systems, and/or methods for water electrolysis and other electrochemical techniques are provided. In some cases, the compositions, electrodes, systems, and/or methods are for electrolysis which can be used for energy storage, particularly in the area of energy conversion, and/or production of oxygen, hydrogen, and/or oxygen and/or hydrogen containing species. In some embodiments, the water for electrolysis comprises at least one impurity and/or at least one additive which has little or no substantially affect on the performance of the electrode. | 05-16-2013 |
Kim Nam Sung, Beacon, NY US
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20120045873 | Methods of Forming CMOS Transistors Using Tensile Stress Layers and Hydrogen Plasma Treatment - Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma. | 02-23-2012 |
Leonard Sung, Hopewell, NJ US
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20120225857 | MST1 KINASE INHIBITORS AND METHODS OF THEIR USE - Compounds for the inhibition of mammalian Ste20-like kinase 1 (MST1) are disclosed, along with compositions comprising them and methods of their use in the treatment, management or prevention of an inflammatory or autoimmune diseases or disorders. | 09-06-2012 |
Linda Wu Sung, Millburn, NJ US
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20140087214 | Electrochemical Devices and Methods of Fabrication - The described invention provides a packaged electrochemical device comprising an electrochemical battery, further comprising at least one electrochemical cell stack and a barrier packaging material. The present invention further provides a method of fabricating the packaged electrochemical device. The present invention further provides a flexible multifunctional liquid-based thermogalvanic cell that converts and stores electricity derived from low grade temperature differentials that exist in ubiquitous scenarios. | 03-27-2014 |
Min Gyu Sung, Latham, NY US
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20150318398 | METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL IN A TRENCH FORMED ABOVE A SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES - One method disclosed includes, among other things, forming a gate structure above an active region of a semiconductor substrate, wherein a first portion of the gate structure is positioned above the active region and second portions of the gate structure are positioned above an isolation region formed in the substrate, forming a sidewall spacer adjacent opposite sides of the first portion of the gate structure so as to define first and second continuous epi formation trenches comprised of the spacer that extend for less than the axial length of the gate structure, and forming an epi semiconductor material on the active region within each of the first and second continuous epi formation trenches. | 11-05-2015 |
20150340468 | RECESSED CHANNEL FIN DEVICE WITH RAISED SOURCE AND DRAIN REGIONS - A method includes forming at least one fin in a semiconductor substrate. A sacrificial gate structure is formed around a first portion of the at least one fin. Sidewall spacers are formed adjacent the sacrificial gate structure. The sacrificial gate structure and spacers expose a second portion of the at least one fin. An epitaxial material is formed on the exposed second portion. At least one process operation is performed to remove the sacrificial gate structure and thereby define a gate cavity between the spacers that exposes the first portion of the at least one fin. The first portion of the at least one fin is recessed to a first height less than a second height of the second portion of the at least one fin. A replacement gate structure is formed within the gate cavity above the recessed first portion of the at least one fin. | 11-26-2015 |
20150364378 | FORMING GATE AND SOURCE/DRAIN CONTACT OPENINGS BY PERFORMING A COMMON ETCH PATTERNING PROCESS - One method disclosed herein includes forming an opening in a layer of material so as to expose the source/drain regions of a transistor and a first portion of a gate cap layer positioned above an active region, reducing the thickness of a portion of the gate cap layer positioned above the isolation region, defining separate initial source/drain contacts positioned on opposite sides of the gate structure, performing a common etching process sequence to define a gate contact opening that extends through the reduced-thickness portion of the gate cap layer and a plurality of separate source/drain contact openings in the layer of insulating material, and forming a conductive gate contact structure and conductive source/drain contact structures. | 12-17-2015 |
20150380304 | TITANIUM SILICIDE FORMATION IN A NARROW SOURCE-DRAIN CONTACT - Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner. | 12-31-2015 |
20160042954 | REPLACEMENT METAL GATE AND FABRICATION PROCESS WITH REDUCED LITHOGRAPHY STEPS - Embodiments of the present invention provide a replacement metal gate and a fabrication process with reduced lithography steps. Using selective etching techniques, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps. This, in turn, reduces the overall cost and complexity of fabrication. Furthermore, additional protection is provided during etching, which serves to improve product yield. | 02-11-2016 |
20160049399 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES WITH A CONDUCTIVE ETCH STOP LAYER - One illustrative gate structure of a transistor device disclosed herein includes a high-k gate insulation layer and a work function metal layer positioned on the high-k gate insulation layer. The device further includes a first bulk metal layer positioned on the work function metal layer. The device further includes a second bulk metal layer. The first and second bulk metal layers have upper surfaces that are at substantially the same height level, and the first and second bulk metal layers are made of substantially the same material. The device further includes a conductive etch stop layer between the first and second bulk metal layers. | 02-18-2016 |
20160049401 | HYBRID CONTACTS FOR COMMONLY FABRICATED SEMICONDUCTOR DEVICES USING SAME METAL - A non-planar semiconductor structure, for example, a dual FinFET structure, includes a n-type semiconductor device and a p-type semiconductor device. Metal-insulator-semiconductor (MIS) contacts provide electrical connection to the n-type device, and metal-semiconductor (MS) contacts provide electrical connection to the p-type device. The metal of both MIS and MS contacts is a same n-type work function metal. In one example, the semiconductor of the MIS contact includes epitaxial silicon germanium with a relatively low percentage of germanium, the insulator of the MIS contact includes titanium dioxide, the semiconductor for the MS contact includes silicon germanium with a relatively high percentage of germanium or pure germanium, and the metal for both contacts includes a n-type work function metal. | 02-18-2016 |
20160071932 | FINFET STRUCTURES HAVING UNIFORM CHANNEL SIZE AND METHODS OF FABRICATION - Methods of fabricating circuit structures including FinFET structures are provided, including: providing a substrate and a first material having a first threshold voltage above the substrate, and a second material having a second threshold voltage lower than the first threshold voltage above the first material; forming fins having base fin portions formed from the first material and upper fin portions formed from the second material; providing gate structures over the fins to form one or more FinFET structures, wherein the gate structures wrap around at least the upper fin portions and have an operating voltage lower than the first threshold voltage and higher than the second threshold voltage, so that the upper fin portions define a channel size of the one or more FinFET structures. Circuit structures including FinFET structures are also provided, in which the FinFET structures have a uniform channel size defined only by upper fin portions thereof. | 03-10-2016 |
Myung Ki Sung, Ypsilanti, MI US
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20140175867 | LIQUID COOLED POWER INDUCTOR - A vehicle electrical power system includes a variable voltage converter. The variable voltage converter includes an inductor assembly having a housing that defines a chamber containing dielectric fluid. An inductor is disposed within the chamber and is in contact with the fluid. The power system also includes a pump configured to circulate the dielectric fluid to cool the inductor. | 06-26-2014 |
Patty Pei-Yi Sung, New York, NY US
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20140330734 | SYSTEMS AND METHODS FOR IDENTIFYING HIDDEN TALENT - A candidate assessment system reviews gaming data from a plurality of players to determine how well those players fit a particular job opening. The system uses one or more interpretation metrics to derive skill sets for each player by analyzing game attribute data from game scenarios played by the player. Each interpretation metric is generally unique, allowing the candidate assessment engine to derive a player's skill sets in markedly different ways. | 11-06-2014 |
Roger Denis Sung, Colorado Springs, CO US
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20090093848 | ENHANCED PEDICLE ROD CLAMP DEVICE - An enhanced pedicle rod clamp device for connecting two or more pedicle rods in spinal surgery is disclosed. The device may include an arm, an upper clamp, and a lower clamp, which are configured for coupling to a pedicle rod. The upper clamp may be coupled to the arm, and the lower clamp may be coupled to the upper clamp. The upper clamp may be rotationally and/or translationally movable with respect to at least one of the arm and the lower clamp. The lower clamp may be rotationally and/or translationally movable with respect to at least one of the arm and the upper clamp. | 04-09-2009 |
20130006308 | ENHANCED PEDICLE ROD CLAMP DEVICE - An enhanced pedicle rod clamp device for connecting two or more pedicle rods in spinal surgery is disclosed. The device may include an arm, an upper clamp, and a lower clamp, which are configured for coupling to a pedicle rod. The upper clamp may be coupled to the arm, and the lower clamp may be coupled to the upper clamp. The upper clamp may be rotationally and/or translationally movable with respect to at least one of the arm and the lower clamp. The lower clamp may be rotationally and/or translationally movable with respect to at least one of the arm and the upper clamp. | 01-03-2013 |
20140188226 | INTERBODY INSERTION TOOL AND METHOD - An interbody insertion tool and cage for use during an interbody spinal fusion procedure is disclosed. In one aspect, the tool comprises a rod centrally located within the tool that has the ability to remain attached to the cage to aid in: coupling the tool to the cage, release of the tool from the cage, alignment of additional hardware, and insertion of materials within the hollow of the cage. | 07-03-2014 |
Seung Hoon Sung, Champaign, IL US
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20100072893 | ELLIPSOIDAL MICROCAVITY PLASMA DEVICES AND POWDER BLASTING FORMATION - The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer. Powder blasting forms half ellipsoid microcavities in the first thin layer. The second thin layer is joined to the first layer. The patterning can be conducted lithographically or can be conduced with a simple screen. | 03-25-2010 |
Seung Hoon Sung, Beaverton, OR US
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20130071297 | ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE - A microplasma device includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel. At least one of the electrodes is encapsulated within the thick metal oxide layer. A method of fabricating a microcavity or microchannel plasma device includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide. | 03-21-2013 |
20130341704 | VARIABLE GATE WIDTH FOR GATE ALL-AROUND TRANSISTORS - Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to fabricate such devices are also described. One or more embodiments of the present invention are directed at approaches for varying the gate width of a transistor structure comprising a nanowire stack having a distinct number of nanowires. The approaches include rendering a certain number of nanowires inactive (i.e. so that current does not flow through the nanowire), by severing the channel region, burying the source and drain regions, or both. Overall, the gate width of nanowire-based structures having a plurality of nanowires may be varied by rendering a certain number of nanowires inactive, while maintaining other nanowires as active. | 12-26-2013 |
20140091308 | SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS & ENHANCEMENT MODE OPERATION - Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation. | 04-03-2014 |
20140091360 | TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S) - Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric. In embodiments, non-planar devices CMOS devices having high carrier mobility may be made from the semiconductor device layer. | 04-03-2014 |
20140091361 | METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING - An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor. | 04-03-2014 |
20140170998 | GROUP III-N TRANSISTORS ON NANOSCALE TEMPLATE STRUCTURES - A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall. In embodiments, the silicon fin has a width comparable to the III-N epitaxial film thicknesses for a more compliant seeding layer, permitting lower defect density and/or reduced epitaxial film thickness. In embodiments, a transition layer is GaN and the semiconductor channel comprises Indium (In) to increase a conduction band offset from the silicon fin. In other embodiments, the fin is sacrificial and either removed or oxidized, or otherwise converted into a dielectric structure during transistor fabrication. In certain embodiments employing a sacrificial fin, the III-N transition layer and semiconductor channel is substantially pure GaN, permitting a breakdown voltage higher than would be sustainable in the presence of the silicon fin. | 06-19-2014 |
20140175378 | EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE - An embodiment includes depositing a material onto a substrate where the material includes a different lattice constant than the substrate (e.g., III-V or IV epitaxial (EPI) material on a Si substrate). An embodiment includes an EPI layer formed within a trench having walls that narrow as the trench extends upwards. An embodiment includes an EPI layer formed within a trench using multiple growth temperatures. A defect barrier, formed in the EPI layer when the temperature changes, contains defects within the trench and below the defect barrier. The EPI layer above the defect barrier and within the trench is relatively defect free. An embodiment includes an EPI layer annealed within a trench to induce defect annihilation. An embodiment includes an EPI superlattice formed within a trench and covered with a relatively defect free EPI layer (that is still included in the trench). Other embodiments are described herein. | 06-26-2014 |
20140175515 | NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS - A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage. | 06-26-2014 |
20140203327 | DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP III-V ACTIVE LAYER - Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a hetero-junction between an upper layer and a lower layer of differing composition. An active layer is disposed above the hetero-structure and has a composition different from the upper and lower layers of the hetero-structure. A gate electrode stack is disposed on and completely surrounds a channel region of the active layer, and is disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure. Source and drain regions are disposed in the active layer and in the upper layer, but not in the lower layer, on either side of the gate electrode stack. | 07-24-2014 |
20140231871 | METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING - An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor. | 08-21-2014 |
20140291693 | GROUP III-N TRANSISTORS ON NANOSCALE TEMPLATE STRUCTURES - A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall. In embodiments, the silicon fin has a width comparable to the III-N epitaxial film thicknesses for a more compliant seeding layer, permitting lower defect density and/or reduced epitaxial film thickness. In embodiments, a transition layer is GaN and the semiconductor channel comprises Indium (In) to increase a conduction band offset from the silicon fin. In other embodiments, the fin is sacrificial and either removed or oxidized, or otherwise converted into a dielectric structure during transistor fabrication. In certain embodiments employing a sacrificial fin, the III-N transition layer and semiconductor channel is substantially pure GaN, permitting a breakdown voltage higher than would be sustainable in the presence of the silicon fin. | 10-02-2014 |
20140291726 | TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S) - Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric. In embodiments, non-planar devices CMOS devices having high carrier mobility may be made from the semiconductor device layer. | 10-02-2014 |
20150064859 | NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS - A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage. | 03-05-2015 |
20150108496 | GROUP III-N TRANSISTOR ON NANOSCALE TEMPLATE STRUCTURES - A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall. In embodiments, the silicon fin has a width comparable to the III-N epitaxial film thicknesses for a more compliant seeding layer, permitting lower defect density and/or reduced epitaxial film thickness. In embodiments, a transition layer is GaN and the semiconductor channel comprises Indium (In) to increase a conduction band offset from the silicon fin. In other embodiments, the fin is sacrificial and either removed or oxidized, or otherwise converted into a dielectric structure during transistor fabrication. In certain embodiments employing a sacrificial fin, the III-N transition layer and semiconductor channel is substantially pure GaN, permitting a breakdown voltage higher than would be sustainable in the presence of the silicon fin. | 04-23-2015 |
20150125357 | GAS REACTOR DEVICES WITH MICROPLASMA ARRAYS ENCAPSULATED IN DEFECT FREE OXIDE - A gas reactor device includes a plurality of microcavities or microchannels defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavities or microchannels to stimulate plasma generation therein upon application of suitable voltage. One or more or all of the electrodes are encapsulated within the thick metal oxide layer. A gas inlet is configured to receive feedstock gas into the plurality of microcavities or microchannels. An outlet is configured to outlet reactor product from the plurality of microcavities or microchannels. In an example preferred device, the feedstock gas is air or O | 05-07-2015 |
20150129830 | NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS - A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor. | 05-14-2015 |
20150187924 | Low Sheet Resistance GaN Channel on Si Substrates Using InAlN and AlGaN Bi-Layer Capping Stack - Transistors or transistor layers include an InAlN and AlGaN bi-layer capping stack on a 2DEG GaN channel, such as for GaN MOS structures on Si substrates. The GaN channel may be formed in a GaN buffer layer or stack, to compensate for the high crystal structure lattice size and coefficient of thermal expansion mismatch between GaN and Si. The bi-layer capping stack an upper InAlN layer on a lower AlGaN layer to induce charge polarization in the channel, compensate for poor composition uniformity (e.g., of Al), and compensate for rough surface morphology of the bottom surface of the InAlN material. It may lead to a sheet resistance between 250 and 350 ohms/sqr. It may also reduce bowing of the GaN on Si wafers during growth of the layer of InAlN material, and provide a AlGaN setback layer for etching the InAlN layer in the gate region. | 07-02-2015 |
20150206796 | III-N DEVICES IN SI TRENCHES - A trench comprising a portion of a substrate is formed. A nucleation layer is deposited on the portion of the substrate within the trench. A III-N material layer is deposited on the nucleation layer. The III-N material layer is laterally grown over the trench. A device layer is deposited on the laterally grown III-N material layer. A low defect density region is obtained on the laterally grown material and is used for electronic device fabrication of III-N materials on Si substrates. | 07-23-2015 |
20150270265 | METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING - An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor. | 09-24-2015 |
20150318375 | SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS & ENHANCEMENT MODE OPERATION - Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation. | 11-05-2015 |
20150349077 | DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP III-V ACTIVE LAYER - Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a hetero-junction between an upper layer and a lower layer of differing composition. An active layer is disposed above the hetero-structure and has a composition different from the upper and lower layers of the hetero-structure. A gate electrode stack is disposed on and completely surrounds a channel region of the active layer, and is disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure. Source and drain regions are disposed in the active layer and in the upper layer, but not in the lower layer, on either side of the gate electrode stack. | 12-03-2015 |
20160064491 | GROUP III-N TRANSISTORS ON NANOSCALE TEMPLATE STRUCTURES - A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall. In embodiments, the silicon fin has a width comparable to the III-N epitaxial film thicknesses for a more compliant seeding layer, permitting lower defect density and/or reduced epitaxial film thickness. In embodiments, a transition layer is GaN and the semiconductor channel comprises Indium (In) to increase a conduction band offset from the silicon fin. In other embodiments, the fin is sacrificial and either removed or oxidized, or otherwise converted into a dielectric structure during transistor fabrication. In certain embodiments employing a sacrificial fin, the III-N transition layer and semiconductor channel is substantially pure GaN, permitting a breakdown voltage higher than would be sustainable in the presence of the silicon fin. | 03-03-2016 |
Seung Hoon Sung, Portland, OR US
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20160056244 | NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY - A fin over an insulating layer on a substrate having a first crystal orientation is modified to form a surface aligned along a second crystal orientation. A device layer is deposited over the surface of the fin aligned along the second crystal orientation. | 02-25-2016 |
Shiang Sung, New York, NY US
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20100180581 | DIESEL OXIDATION CATALYST COMPOSITE WITH LAYER STRUCTURE FOR CARBON MONOXIDE AND HYDROCARBON CONVERSION - Provided is a catalyst composition, in particular a diesel oxidation catalyst, for the treatment of exhaust gas emissions, such as the oxidation of unburned hydrocarbons (HC), and carbon monoxide (CO). More particularly, the present invention is directed to a catalyst structure comprising at least two, specifically three distinct layers, at least one of which contains an oxygen storage component (OSC) that is present in a layer separate from the majority of the platinum group metal (PGM) components, such as palladium and platinum. | 07-22-2010 |
20100186375 | Layered Diesel Oxidation Catalyst Composites - Provided are diesel exhaust components where palladium is segregated from a molecular sieve, specifically a zeolite, in a catalytic material. In the catalytic material, therefore, there are at least two layers: a palladium-containing layer that is substantially free of a molecular sieve and a hydrocarbon trap layer that comprises at least one molecular sieve and is substantially free of palladium. The palladium is provided on a high surface area, porous refractory metal oxide support. The catalytic material can further comprise a platinum component, where a minor amount of the platinum component is in the hydrocarbon trap layer, and a majority amount of the platinum component is in the palladium-containing layer. Systems and methods of using the same are also provided. | 07-29-2010 |
20130084222 | Diesel Oxidation Catalyst with Layered Structure Containing Ceria Composition as Palladium Support Material for Enhanced HC and CO Gas Conversion - The present invention relates to a layered diesel oxidation catalyst (DOC) comprising: a) a carrier substrate; b) a diesel oxidation catalytic material comprising b1) a first layer located on the carrier substrate, the first layer comprising palladium impregnated on a support material comprising ceria in an amount of at least 45 weight-% based on the total weight of the support material, and optionally comprising platinum; b2) a second layer located on the first layer, the second layer comprising palladium and platinum each impregnated on a support material comprising a metal oxide; wherein the platinum to palladium weight ratio of the first layer is lower than the platinum to palladium weight ratio of the second layer. | 04-04-2013 |
20130142714 | DIESEL OXIDATION CATALYSTS, SYSTEMS AND METHODS OF TREATMENT - Diesel oxidation catalysts comprising a first washcoat layer including a platinum group metal impregnated on a promoted non-zeolitic support are described. The promoter is one or more of tin, manganese, indium, group VIII metals. Methods of making and using the diesel oxidation catalyst, including emissions treatment systems, are also described. | 06-06-2013 |
Shihwu Sung, Ames, IA US
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20100258501 | Sequencing Batch Aerated Lagoon - A sequencing batch lagoon process is carried out in a minimum of two earthen lagoons and provides the treatment of municipal or industrial wastewater. Each lagoon is operated on fill-draw basis in a sequencing manner. Raw wastewater continues entering into one of the lagoons while the other lagoon is at full liquid level. The lagoon at the full liquid level will begin to discharge when the other lagoon at filling mode is reaching the full liquid level. The lagoon at the drawdown mode continues until the liquid level is down to the lowest liquid level. The wastewater feeding is then alternated to the lagoon which is at the lowest liquid level. The lagoon at the full liquid level shall have no contamination from raw wastewater or the lagoon at the filling mode. The biological reactions occur under aerobic and anoxic conditions. The aerobic conditions occur in the liquid or above the bottom sludge while the anoxic conditions occur near or within the bottom sludge. Air is provided by surface mechanical aerators or diffused aeration system. The aeration system is shut down during the discharge mode and is turned back on during the filling mode. Sludge in the lagoon is not wasted during the operation of sequencing batch lagoon process. The capacity of each lagoon depends on the number of lagoons. | 10-14-2010 |
Shung H. Sung, Troy, MI US
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20090176122 | METHOD OF FORMING CASTING WITH FRICTIONAL DAMPING INSERT - A method of making a frictionally damped part including providing a frictional damping insert including downwardly extending support legs stamped out of a body portion of the insert. | 07-09-2009 |
20090269575 | DAMPED PRODUCT WITH AN INSERT HAVING A LAYER INCLUDING GRAPHITE THEREON AND METHODS OF MAKING AND USING THE SAME - A product including a damping substrate and a layer over a portion thereof, the layer including graphite, and a body portion positioned so that the layer is interposed between the body portion and the damping substrate. | 10-29-2009 |
20100193283 | NOISE REDUCTION SYSTEM - A noise reduction system for a device having a noise generating subsystem includes a Helmholtz resonator and a controller. The Helmholtz resonator is disposed in fluid communication with the noise generating subsystem, and includes an active material responsive to a control signal that adjusts a dimensional characteristic of the Helmholtz resonator in such a manner as to affect a resonance characteristic of the Helmholtz resonator. The controller is responsive to an operational characteristic of either the device or the noise generating subsystem to produce the control signal. In response to the operational characteristic, the control signal serves to affect the resonance characteristic of the Helmholtz resonator in such a manner as to reduce a noise arising from the noise generating subsystem, or create a desirable sound quality alteration. | 08-05-2010 |
20100282550 | MODE ALTERING INSERT FOR VIBRATION REDUCTION IN COMPONENTS - A component with a first number of natural modes of vibration. An insert may be coupled to the component. The insert may have a second number of natural modes of vibration which is a different number than the first number of natural modes of vibration of the component. The insert helps damp vibrations in the component when the component is vibrated. | 11-11-2010 |
20100294063 | FRICTION DAMPED GEARS - One exemplary embodiment includes a transfer gear that carries a friction damping component that damps vibrations in the gear. The friction damping component may be carried on or in a hub, a web, or both the hub and the web, and may include at least one non-bonded surface that contacts an adjacent surface. | 11-25-2010 |
20110109448 | Method and System for Identifying Wet Pavement Using Tire Noise - A wet road surface detection system is provided for a vehicle driving on a road. The wet road surface detection system includes a sound sensing device coupled to the vehicle for capturing noise of the vehicle tires as the vehicle drives on a road surface. A processor processes sounds captured by the audible sensing device. The processor quantifies a variable sound level of the captured noise between a first frequency and a second frequency. The processor determines whether each quantified sound level between the first frequency and the second frequency is above a predetermined sound level threshold below the sound level at the first frequency. The processor determines that the vehicle is driving on a wet road surface in response to each quantified sound level between the first frequency and the second frequency being above a predetermined sound level threshold below the sound level at the first frequency. | 05-12-2011 |
Si-Bum Sung, Madison, WI US
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20090313724 | Alteration of Flowering Time in Plants - The present invention provides genetic identification and use information about a family of genes, the FLOWERING LOCUS C (FLC) genes, that is part of the regulate the timing of the onset of flowering in plants. This information enables creation of transgenic plants in which the timing of the flowering of the plants has been selectively altered. Since these genes natively act to delay the time of flowering in plants, enhancing activity of the FLC protein delays the timing of flowering initiation while inhibiting the activity of FLC advances the timing of the start of flowering. A representative number of samples of the gene family are described. Members of the gene family are demonstrated to work in other plant species as well. | 12-17-2009 |
20100333232 | ALTERATION OF FLOWERING TIME IN PLANTS - The present invention provides genetic identification and use information about a family of genes, the FLOWERING LOCUS C (FLC) genes, that is part of the regulate the timing of the onset of flowering in plants. This information enables creation of transgenic plants in which the timing of the flowering of the plants has been selectively altered. Since these genes natively act to delay the time of flowering in plants, enhancing activity of the FLC protein delays the timing of flowering initiation while inhibiting the activity of FLC advances the timing of the start of flowering. A representative number of samples of the gene family are described. Members of the gene family are demonstrated to work in other plant species as well. | 12-30-2010 |
Siyong Sung, Roslyn Heights, NY US
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20110303235 | ARTIFICIAL NAIL DISPLAY PACKAGE - A display package is provided that informs the customer of the product contained therein as well as providing a functional and useful storage unit for artificial nails when not in use. The display package includes a cylindrical neck portion at a first end having one or more grooves and a cap having one or more tabs located in an inner portion of the cap, the one or more tabs fitting into the one or more grooves. The display package further comprises a main body having a front wall, a back wall, and sidewalls that contour inwards to connect to the cylindrical neck portion, the main body having a flat base at a second end opposite to the cylindrical neck portion with the walls of the main body forming a cavity there within. | 12-15-2011 |
20110303575 | ARTIFICIAL NAIL DISPLAY PACKAGE - A display package is provided that informs the customer of the product contained therein as well as providing a functional and useful storage unit for artificial nails when not in use. The display package includes a cylindrical portion and a main body, including a cavity within the main body of the display package. A first portion and a second portion of the display package divide the main body and the cylindrical portion and are joined together to form the display package. The display package is preferably in the shape of a bottle of nail polish and contains one or more trays having indentations for holding items such as artificial nails. | 12-15-2011 |
Stephen Sung, Hamilton, OH US
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20090000508 | Radiation Curable Inkjet Inks, Method of Manufacture, and Methods of Use Thereof - Disclosed herein are non-aqueous, radiation curable inkjet inks exhibiting stability at high shear rate (good rheological stability), stability at high temperatures, and/or stability in inkjet print heads, especially impulse inkjet print heads. The inks have a wide process window at a variety of print speeds using an impulse inkjet print head. | 01-01-2009 |
Su-Wei Sung, Ann Arbor, MI US
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20100244440 | HIGH PRESSURE FUEL PIPE CONSTRUCTION FOR AN INTERNAL COMBUSTION ENGINE - A high pressure fuel pipe construction for an internal combustion engine, such as a direct injection engine. A conduit for the fuel is open at each end and a ball having a throughbore is slidably positioned over one end of the conduit. A reinforcing sleeve is positioned inside the end of the conduit so that the sleeve extends entirely through the ball. The sleeve, ball and the end of the conduit are then brazed together to attach the ball and conduit together. A double chamfer is provided at one end of the ball throughbore to facilitate inspection of the brazing quality. Additionally, a loop is formed in the conduit and a dampener is attached to the loop. | 09-30-2010 |
20120006914 | HIGH PRESSURE FUEL PIPE CONSTRUCTION FOR AN INTERNAL COMBUSTION ENGINE - A high pressure fuel pipe construction for an internal combustion engine, such as a direct injection engine. A conduit for the fuel is open at each end and a ball having a throughbore is slidably positioned over one end of the conduit. A reinforcing sleeve is positioned inside the end of the conduit so that the sleeve extends entirely through the ball. The sleeve, ball and the end of the conduit are then brazed together to attach the ball and conduit together. A double chamfer is provided at one end of the ball throughbore to facilitate inspection of the brazing quality. Additionally, a loop is formed in the conduit and a dampener is attached to the loop. | 01-12-2012 |
Teresa Sung, Summit, NJ US
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20150311569 | Wearable Battery Charger - An all graphene battery is disclosed. The battery is designed into a form of a belt and can charge multiple portable electric devices simultaneously. The battery has a graphene based anode, a graphene composite based cathode. The electrolyte of the battery is gel like functionalized graphene oxide. The device of this disclosure may use thermoelectric effect to charge itself. The battery of this disclosure is safe, and has a high capacity, high energy density and long life time. The battery includes no liquids and is light weighted. | 10-29-2015 |
20150368436 | High Carbon Grade Graphite Block And A Method To Make It - A method to make a graphite block of any desired size and with over 99% carbon purity and high density is provided. The graphite block is obtained by mixing graphite flakes of any size with graphene oxide sheets and subjecting the mixture to elevated temperature and pressure. With this method large graphite blocks can be obtained economically and fast. The graphite blocks of this invention have superlubricity characters. | 12-24-2015 |
Uhna Sung, New Haven, CT US
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20090156530 | Norepinepherine Transporter Mutants and Uses Thereof - The present invention provides norepinepherine transporter (NET) mutants which display altered phosphorylation at site T30 and altered receptor trafficking. Methods for the use of the NET mutants, e.g., screening of compounds which alter NET trafficking, are also provided. A transgenic animal such as a mouse may comprise a NET mutant of the present invention. | 06-18-2009 |
Wang-Kyung Sung, Atlanta, GA US
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20120227487 | BULK ACOUSTIC WAVE GYROSCOPE WITH SPOKED STRUCTURE - A Coriolis-based bulk acoustic wave gyroscope includes a center-supported resonating element with capacitively-coupled drive, sense, and control electrodes. The resonating element has a first substantially solid or perforated region which is connected to the center-support by a second region characterized by a plurality of spokes or beams. When operating in a resonance state, the first region undergoes a bulk acoustic mode of vibration while the second region undergoes a flexural mode of vibration. Energy losses associated with the flexural mode of vibration reduce the overall quality factor (Q) at high resonance frequencies creating a large bandwidth and a fast response time without needing vacuum. | 09-13-2012 |
20130125614 | METHOD AND APPARATUS FOR SELF-CALIBRATION OF GYROSCOPES - A gyroscope having a resonant body utilizes a self-calibration mechanism that does not require physical rotation of the resonant body. Instead, interface circuitry applies a rotating electrostatic field to first and second drive electrodes simultaneously to excite both the drive and sense resonance modes of the gyroscope. When drive electrodes associated with both the drive and sense resonance modes of the gyroscope are excited by forces of equal amplitude but 90° phase difference, respectively, the phase shift in the gyroscope response, as measured by the current output of the sense electrodes for each resonance mode, is proportional to an equivalent gyroscope rotation rate. | 05-23-2013 |
20130283911 | MODE-MATCHED SINGLE PROOF-MASS DUAL-AXIS GYROSCOPE AND METHOD OF FABRICATION - A single proof-mass, dual-axis gyroscope apparatus comprises a resonating body member and first and second electrodes each capacitively coupled to the resonating body member by a respective lateral capacitive air gap and a vertical capacitive air gap. The width of one of the lateral capacitive air gap of the first electrode is substantially smaller than the vertical capacitive air gap. The width of one of the vertical capacitive air gap of the second electrode is substantially smaller than the lateral capacitive air gap. The apparatus claimed can address the process variation such as vertical and lateral dimension variation by electrostatic tuning method. | 10-31-2013 |
20140157896 | METHOD AND APPARATUS FOR SELF-CALIBRATION OF GYROSCOPES - A gyroscope having a resonant body utilizes a self-calibration mechanism that does not require physical rotation of the resonant body. Instead, interface circuitry applies a rotating electrostatic field to first and second drive electrodes simultaneously to excite both the drive and sense resonance modes of the gyroscope. When drive electrodes associated with both the drive and sense resonance modes of the gyroscope are excited by forces of equal amplitude but 90° phase difference, respectively, the phase shift in the gyroscope response, as measured by the current output of the sense electrodes for each resonance mode, is proportional to an equivalent gyroscope rotation rate. | 06-12-2014 |
Wei-Jer Sung, New Providence, NJ US
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20090029536 | Bipolar transistors with vertical structures - A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers. | 01-29-2009 |
Woongje Sung, Raleigh, NC US
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20140055901 | SOLID STATE FAULT ISOLATION DEVICES AND METHODS - Disclosed herein are solid state fault isolation devices and methods. According to one or more embodiments, a semiconductor current fault controlled device is provided. The device includes a semiconductor substrate of N-type conductivity. The substrate has opposed major surfaces. An anode region of P-type conductivity is formed in one major surface. A P-type buried layer is formed in a first portion of the other major surface. A junction field-effect transistor (JFET) is formed in a second portion of the other major surface. A P-type top layer is formed in the JFET and forms a channel defined by an overlap between the P-type buried layer and the P-type top layer. The channel laterally extends to the semiconductor substrate from a cathode region and being shielded from the anode region. | 02-27-2014 |
Ying-Ju Sung, Northvale, NJ US
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20150126576 | NEURONAL PAIN PATHWAY MODULATORS - The present invention relates to compounds that may be used to inhibit activation of protein kinase G (“PKG”). It is based, at least in part, on the discovery of the tertiary structure of PKG and the identification of molecules that either bind to the active site of PKG and/or are analogs of balanol. | 05-07-2015 |
Ying-Ju Sung, Prospect Park, NJ US
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20120295853 | NEURONAL PAIN PATHWAY - The present invention relates to the discovery of a novel molecular pathway involved in long-term hyperexcitability of sensory neurons, which, in higher animals, is associated with persistent pain. It is based on the discovery that, following injury to an axon of a neuron, an increase in nitric oxide synthase activity results in increased nitric oxide production, which, in turn, activates guanylyl cyclase, thereby increasing levels of cGMP. Increased cGMP results in activation of protein kinase G (“PKG”), which then is retrogradely transported along the axon to the neuron cell body, where it phosphorylates MAPKerk. | 11-22-2012 |
20150320761 | NEURONAL PAIN PATHWAY - The present invention relates to the discovery of a novel molecular pathway involved in long-term hyperexcitability of sensory neurons, which, in higher animals, is associated with persistent pain. It is based on the discovery that, following injury to an axon of a neuron, an increase in nitric oxide synthase activity results in increased nitric oxide production, which, in turn, activates guanylyl cyclase, thereby increasing levels of cGMP. Increased cGMP results in activation of protein kinase G (“PKG”), which then is retrogradely transported along the axon to the neuron cell body, where it phosphorylates MAPKerk. | 11-12-2015 |
Yixing Sung, Monroeville, PA US
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20090238322 | FUEL ROD AND ASSEMBLY CONTAINING AN INTERNAL HYDROGEN/TRITIUM GETTER STRUCTURE - A fuel assembly ( | 09-24-2009 |
Young-Seok Alex Sung, Evanston, IL US
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20150189774 | METHOD AND APPARATUS FOR OPERATING A TRAY MECHANISM - A tray mechanism for a device housing includes a tray bed having a planar surface with first and second opposing sides that form a boundary around the planar surface, wherein the first opposing sides include a front side and a back side, wherein the front side is configured with dimensions for closing an opening of a cavity within the device housing, and wherein the second opposing sides are configured for a slideable attachment within the cavity of the device housing. The tray mechanism further includes a lever positioned on the planar surface of the tray bed and a hinge mechanism that pivotally connects the lever to the planar surface of the tray bed. A method for operating the tray mechanism includes a convex side of the lever rolling against the device housing as the lever rotates to eject the tray bed pivotally connected to lever from the device housing. | 07-02-2015 |
Yuh Sung US
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20110212319 | CARBON NANOTUBE DEVICE AND A WAFER FOR GROWING CARBON NANOTUBE - The invention discloses a carbon nanotube device, comprising a substrate, a catalyst layer formed on the substrate, a porous capping layer formed on the catalyst layer, and a carbon nanotube formed on the porous capping layer. A wafer for growing a carbon nanotube comprises a substrate, a catalyst layer formed on the substrate, and a porous capping layer formed on the catalyst layer, with carbon nanotube growning on the porous capping layer. | 09-01-2011 |
Yu-Lung Sung, Houston, TX US
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20160033681 | FABRICATION OF LENSES BY DROPLET FORMATION ON A PRE-HEATED SURFACE - A lithography-free, mold-free, single-step method of fabricating high quality optical lenses by curing polydimethylsiloxane (PDMS) droplets on a pre-heated smooth surface allows lenses with different focal lengths to be made by varying the droplet volume and surface temperature. | 02-04-2016 |
Yu-Wei Sung, West Lafayette, IN US
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20110213738 | METHODS AND APPARATUS TO MODEL END-TO-END CLASS OF SERVICE POLICIES IN NETWORKS - Methods and apparatus to model end-to-end class of service policies in operational networks are disclosed. An example method to generate a class of service model is described, including electronically generating a ruleset based on the class of service configuration associated with a router, electronically generating a flat representation of the ruleset, electronically generating a class of service model by composing the flat representation into a composed ruleset, and storing the class of service model in a computer-readable memory. | 09-01-2011 |