Patent application number | Description | Published |
20080231186 | PLASMA DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME, AND RELATED TECHNOLOGIES - A plasma display panel is disclosed. A method for manufacturing the plasma display panel includes: forming address electrodes and a first dielectric layer on a first substrate; forming barrier ribs by stacking a photosensitive barrier rib material, containing a hybrid binder, on the first substrate, and processing the stacked photosensitive barrier rib material; coating phosphor layers in respective cells defined by the barrier ribs; sequentially forming a plurality of transparent electrodes and bus electrodes, a second dielectric layer, and a protective layer on a second substrate; and bonding the first substrate and the second substrate with each other. | 09-25-2008 |
20080268653 | METHOD OF FORMING HIGH DIELECTRIC FILM USING ATOMIC LAYER DEPOSITION AND METHOD OF MANUFACTURING CAPACITOR HAVING THE HIGH DIELECTRIC FILM - A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor. | 10-30-2008 |
20080297049 | PLASMA DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME - A plasma display panel and method are provided to reduce noise. The plasma display panel may include a first substrate including a first electrode, a second substrate facing the first substrate, the second substrate including a second electrode, and barrier ribs arranged between the first substrate and the second substrate to partition discharge cells. The plasma display panel may also include a first adhesion layer arranged between the first substrate and each of the barrier ribs, and a second adhesion layer arranged between the first substrate and the second substrate. | 12-04-2008 |
20090050210 | Methods for Operating Liquid Chemical Delivery Systems Having Recycling Elements - Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber. | 02-26-2009 |
20090096008 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La | 04-16-2009 |
20100044740 | SEMICONDUCTOR DEVICE - A semiconductor device with a substrate, a first electrode on the substrate, at least one of an injection layer or a transporting layer on the first electrode, an adhesion layer on the at least one of an injection layer or a transporting layer, and a second electrode on the adhesion layer. | 02-25-2010 |
20110001936 | OPTICAL SYSTEM - An optical system is provided. The optical system includes a luminous system which comprises a plurality of light source devices and an image unit; and a projection system which receives light having an image through the luminous system, and enlarges and projects the light, wherein the plurality of light source devices comprise a reflection member which reflects light beam emitted from the light source devices, and are disposed so that the light beam emitted from the light source devices is reflected by the reflection member one time and enters to the image unit. | 01-06-2011 |
20110025990 | OPTICAL SYSTEM - An optical system is provided. The optical system includes an illumination system and a projection system. The illumination system includes a light source, a light guide unit, a first relay lens and a second relay lens, a reflection mirror, a reflection lens, and an image unit which are arranged sequentially along a light axis. The reflection lens includes a first surface which is coated with light-transmitting material and a second surface which has a reflection coating surface so that the light passing through the first surface is reflected. | 02-03-2011 |
20110037109 | SEMICONDUCTOR DEVICES INCLUDING LOWER AND UPPER DEVICE ISOLATION PATTERNS - In some embodiments, a semiconductor substrate includes trenches defining active regions. The semiconductor device further includes lower and upper device isolation patterns disposed in the trenches. An intergate insulation pattern and a control gate electrode are disposed on the semiconductor substrate to cross over the active regions. A charge storage electrode is between the control gate electrode and the active regions. A gate insulation pattern is between the charge storage electrode and the active regions, and the intergate insulation pattern directly contacts the upper device isolation pattern between the active regions. | 02-17-2011 |
20110198667 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 08-18-2011 |
20110204387 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS - A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells. | 08-25-2011 |
20110227814 | LIGHT SOURCE MODULE AND DISPLAY APPARATUS HAVING THE SAME - A display apparatus and a light source module are provided. The display apparatus includes: a display unit; and a light source module providing light so that an image is displayed on the display unit, the light source module including: a light emitting element which emits the light; a base substrate on which the light emitting element; and a cooling unit including: a capillary tube forming part which a capillary tube inside the base substrate and extending between a first area and a second area farther away from the light emitting element than the first area, and coolant which travels between the first area and the second area in the capillary tube according to a change in phase caused by heat from the light emitting element to transfer the heat from the first area to the second area, and which cools the emitted heat. | 09-22-2011 |
20110267687 | OPTICAL SYSTEM AND IMAGE PROJECTING APPARATUS USING THE SAME - The optical system includes: a first optical group which performs a zoom function using a first movable lens, a second optical group which performs a focus function using a second movable lens, and a third optical group which performs a wide angle function by reflecting light passing through the first optical group and the second optical group, wherein a first intermediate image is formed between the first optical group and the second optical group. | 11-03-2011 |
20110304826 | ILLUMINATING UNIT AND DISPLAY APPARATUS INCLUDING THE SAME - An illuminating unit and a display apparatus including the illuminating unit are provided. The illuminating unit generates and emits light to a display element of the display apparatus, and includes a light source; a uniformizing unit which uniformizes light from the light source and includes a plurality of uniformizing lenses arranged on an optical path; a condensing unit which condenses light from the uniformizing unit to emit the light to the display element and includes a plurality of condensing lenses sequentially arranged on the optical path, and the uniformizing unit and the condensing unit are arranged based on a width of one of a plurality of cell lenses forming the uniformizing lens and a width of an image displayed in the display element. | 12-15-2011 |
20120009697 | CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME - A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed. | 01-12-2012 |
20120104432 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked. | 05-03-2012 |
20120164347 | SUSCEPTOR FOR CVD APPARATUS, CVD APPARATUS AND SUBSTRATE HEATING METHOD USING THE SAME - Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body. | 06-28-2012 |
20120167824 | CVD APPARATUS - A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe. | 07-05-2012 |
20120171815 | CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME - Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers. | 07-05-2012 |
20120286309 | SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME - A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film. | 11-15-2012 |
20120326121 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 12-27-2012 |
20130002139 | SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - There is provided a semiconductor light emitting device package including: a semiconductor substrate having a first principal surface and a second principal surface opposed thereto; a light source disposed on a first principal surface side of the semiconductor substrate; a plurality of electrode pads disposed on a second principal side of the semiconductor substrate; a conductive via extended from the plurality of electrode pads and penetrating the semiconductor substrate; and a driving circuit unit including a plurality of diodes obtained through a pn junction formed by a p-type region and an n-type region, and electrically connected to the conductive via and the light source. | 01-03-2013 |
20130020555 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE - A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of Al | 01-24-2013 |
20130020598 | LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF - A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively. | 01-24-2013 |
20130026446 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer. | 01-31-2013 |
20130061051 | METHOD FOR AUTHENTICATING ELECTRONIC TRANSACTION, SERVER, AND TERMINAL - A method for authenticating an electronic transaction includes: transmitting first authentication data to a first terminal and transmitting second authentication data to a second terminal; receiving first encryption data from the first terminal and receiving second encryption data from the second terminal, the first encryption data corresponding to the first authentication data and the second encryption data corresponding to the second authentication data; storing the first encryption data and the second encryption data; and authenticating the first terminal and the second terminal according to the first authentication data and the second authentication data. The first encryption data is encrypted by a first internal key of the first terminal, and the second encryption data is encrypted by a second internal key of the second terminal. | 03-07-2013 |
20130099248 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer. | 04-25-2013 |
20130244353 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer. | 09-19-2013 |
20130255578 | CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR - A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate. | 10-03-2013 |
20130313986 | LIGHT EMITTING APPARATUS - A light emitting apparatus includes a power supply providing power having a predetermined frequency, a plurality of light emitting diode arrays, and at least one frequency converter. The light emitting diode arrays are electrically connected to the power supply and respectively have an array structure in which at least one or more light emitting diodes are connected to one another in series. The at least one frequency converter is connected to both ends of the power supply, and configured to modulate a frequency of the power provided from the power supply and provide a modulated electrical signal to at least one of the plurality of light emitting diode arrays. | 11-28-2013 |
20140132935 | PROJECTION APPARATUS - A projection apparatus includes an image projection unit configured to form an image and project the formed image, a screen unit configured to display the image projected from the image projection unit, and a mounting unit on which the image projection unit and the screen unit are integrally mounted. The screen unit is formed to have a curvature. | 05-15-2014 |
20140139914 | REFLECTION TYPE SCREEN FOR FRONT PROJECTION DISPLAY APPARATUS - Provided is a front reflection screen for a front projection display apparatus. The front reflection screen includes a reflection layer configured to reflect an incident light including an image light projected from a projector and an external light, and a tint layer disposed before the reflection layer and including light absorbing particles to block a portion of the incident light. | 05-22-2014 |
20140183589 | METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY - There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate. | 07-03-2014 |
20140191192 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer. | 07-10-2014 |
20140217355 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed on a light emitting surface from which light generated from the active layer is output, wherein a section of the micro-pattern parallel to the light emitting surface has a polygonal shape. | 08-07-2014 |
20140346437 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of In | 11-27-2014 |
20150037920 | CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME - A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed. | 02-05-2015 |
20150067827 | APPARATUS AND METHOD FOR SETTING A USER-DEFINED PATTERN FOR AN APPLICATION - Provided is a terminal with a fingerprint reader and method of operating the same. The terminal includes a fingerprint reader to scan and read a fingerprint of a user and a user verification module. The user verification module calculates a matching value between the fingerprint read by the fingerprint reader and a previously registered fingerprint of the user, and identifies the matching value and a security level of a requested application to determine whether to execute the requested application. The security level is variable; for example, the security level may vary according to a type of application or may be arbitrarily set by the user. | 03-05-2015 |