Patent application number | Description | Published |
20090278107 | Phase change memory device - The phase change memory device includes a first electrode and a second electrode and a first phase change material pattern and a second phase change material pattern interposed between the first electrode and the second electrode, wherein the first and second phase change material patterns have respectively different electrical characteristics. | 11-12-2009 |
20100248442 | METHODS OF FORMING A PHASE CHANGE MEMORY DEVICE - Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell. | 09-30-2010 |
20100248460 | Method of forming information storage pattern - A method of forming an information storage pattern, includes placing a semiconductor substrate in a process chamber, injecting first, second and third process gases into the process chamber during a first process to form a lower layer on the substrate based on a first injection time and/or a first pause time, injecting the second process gas into the process chamber during a second process, wherein the second process gas is injected into the process chamber during a first elimination time, injecting a fourth process gas together with the second and third process gases into the process chamber during a third process in accordance with a second injection time and/or a second pause time to form an upper layer on the lower layer, and injecting the second process gas into the process chamber during a fourth process, wherein the second process gas is injected into the process chamber during a second elimination. | 09-30-2010 |
20110032752 | Multi-Level Memory Device Using Resistance Material - A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC. | 02-10-2011 |
20110032753 | MEMORY CELLS INCLUDING RESISTANCE VARIABLE MATERIAL PATTERNS OF DIFFERENT COMPOSITIONS - A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns. | 02-10-2011 |
20110197812 | APPARATUS AND METHOD FOR FABRICATING A PHASE-CHANGE MATERIAL LAYER - Apparatus for fabricating a phase-change material layer include a process chamber. A first source supplier including a liquid delivery system (LDS) structure is coupled between a tellurium (Te) source container and the process chamber. A second source supplier including a bubbler method structure is coupled between at least one metal organic (MO) source container and the process chamber. Methods are also provided. | 08-18-2011 |
20110272663 | NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT - A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions. | 11-10-2011 |
20110284815 | PHASE-CHANGE MEMORY DEVICES HAVING STRESS RELIEF BUFFERS - A memory device includes a substrate and a memory cell including a first electrode on the substrate, a phase-change material region on the first electrode and a second electrode on the phase-change material region opposite the first electrode. The memory device further includes a stress relief buffer adjacent a sidewall of the phase-change material region between the first and second electrodes. In some embodiments, the stress relief buffer includes a stress relief region contacting the sidewall of the phase-change material region. In further embodiments, the stress relief buffer includes a void adjacent the sidewall of the phase-change material region. | 11-24-2011 |
20120040508 | Method of Forming Semiconductor Device Having Self-Aligned Plug - A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug. | 02-16-2012 |
20120142141 | METHOD OF FORMING RESISTANCE VARIABLE MEMORY DEVICE - A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film. | 06-07-2012 |
20120231603 | Methods of forming phase change material layers and methods of manufacturing phase change memory devices - A phase change material layer includes a Ge-M-Te (GMT) ternary phase change material, where Ge is germanium, M is a heavy metal, and Te is tellurium. The GMT ternary phase change material may also include a dopant. | 09-13-2012 |
20130302966 | Method of Forming Semiconductor Device Having Self-Aligned Plug - A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug. | 11-14-2013 |
20140273395 | METHODS OF FORMING A THIN LAYER AND METHODS OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE USING THE SAME - A method of forming a thin layer and a method of manufacturing a phase change memory device, the method of forming a thin layer including providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by following the Formula 2: | 09-18-2014 |
Patent application number | Description | Published |
20090075420 | METHOD OF FORMING CHALCOGENIDE LAYER INCLUDING TE AND METHOD OF FABRICATING PHASE-CHANGE MEMORY DEVICE - The method of forming a Te-containing chalcogenide layer includes radicalizing a first source that contains Te to form a radicalized Te source, and forming a Te-containing chalcogenide layer by supplying the radicalized Te source into a reaction chamber. A method fabricating a phase change memory device includes loading a substrate on which a lower electrode is formed into a reaction chamber, radicalizing a first source that contains Te to form a radicalized Te source, forming a phase change material film containing Te on the lower electrode by supplying the radicalized Te source into the reaction chamber, and forming an upper electrode on the phase change material film. | 03-19-2009 |
20090097305 | METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE - In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR | 04-16-2009 |
20090280599 | PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATION - A phase change memory device includes a bottom electrode on a substrate, a phase change material pattern on the bottom electrode, and a top electrode on the phase change material pattern. The phase change material pattern includes at least 50 percent antimony (Sb). | 11-12-2009 |
20130101491 | METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE - In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR | 04-25-2013 |
Patent application number | Description | Published |
20080272355 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME - A memory device using a phase change material and a method for forming the same are disclosed. One embodiment of a memory device includes a first insulating layer provided on a substrate and defining an opening; a first conductor including a first portion and a second portion, the first portion provided on a bottom of the opening, the second portion being continuously provided along a sidewall of the opening; a variable resistor connected to the second portion of the first conductor and provided along the sidewall of the opening; and a second conductor provided on the variable resistor. | 11-06-2008 |
20080308785 | PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME - Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen. | 12-18-2008 |
20090101881 | SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC SYSTEMS EMPLOYING THE SAME AND METHODS OF FABRICATING THE SAME - In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern. | 04-23-2009 |
20090233421 | Methods of Fabricating Semiconductor Device Including Phase Change Layer - Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer. | 09-17-2009 |
20110180774 | Phase Change Memory Device - Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen. | 07-28-2011 |
20120319069 | Phase Change Memory Device - Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen. | 12-20-2012 |
20130005112 | METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE - In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR | 01-03-2013 |