Patent application number | Description | Published |
20090057783 | Semiconductor device and method of fabricating metal gate of the same - Provided is a semiconductor device and a method of fabricating a metal gate in the semiconductor device. The semiconductor device includes a metal gate formed on a gate insulating film, the metal gate is formed of a mixture of a metal nitride and a metal carbide, and a work function of the metal gate is determined according to ratios of the metal nitride with respect to the metal carbide. | 03-05-2009 |
20090065873 | Semiconductor device and method of fabricating metal gate of the same - Provided is a semiconductor device that comprises a metal gate having a low sheet resistance characteristic and a high diffusion barrier characteristic and a method of fabricating the metal gate of the semiconductor device. The semiconductor device includes a metal gate formed on a gate insulating film, wherein the metal gate is formed of a metal nitride that contains Al or Si and includes upper and lower portions where the content of Al or Si is relatively high and a central portion where the content of Al or Si is relatively low. | 03-12-2009 |
20090162983 | Method of fabricating schottky barrier transistor - Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate;
| 06-25-2009 |
20100112771 | Method of fabricating Schottky barrier transistor - Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; | 05-06-2010 |
20100140608 | Transistor and method of manufacturing the same - Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other. | 06-10-2010 |
20100148825 | Semiconductor devices and methods of fabricating the same - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device. | 06-17-2010 |
20100176393 | Oxide semiconductor and thin film transistor including the same - Provided are an oxide semiconductor and a thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of indium (In) oxide and hafnium (Hf) and may be a channel material of the thin film transistor. | 07-15-2010 |
20100283048 | CMOS image sensor and method of manufacturing the same - Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved. | 11-11-2010 |
20110156020 | Transistor - Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor. | 06-30-2011 |
20110168993 | Transistors and methods of manufacturing the same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 07-14-2011 |
20110171522 | Secondary battery - A secondary battery includes a case, the case including a first side having a bead thereon, the bead having a height h and a width w, a ratio of the height h to the width w satisfying | 07-14-2011 |
20110241989 | Remote touch panel using light sensor and remote touch screen apparatus having the same - A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer. | 10-06-2011 |
20110242384 | Image sensor using light-sensitive device and method of operating the image sensor - Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel. | 10-06-2011 |
20110261017 | Light sensing circuit, and remote optical touch panel and image acquisition apparatus including the light sensing circuit - Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified. | 10-27-2011 |
20110284722 | Light-sensing circuit, method of operating the light-sensing circuit, and light-sensing apparatus employing the light-sensing circuit - Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor. | 11-24-2011 |
20120085999 | Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors - Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times. | 04-12-2012 |
20120113030 | APPARATUS AND METHOD FOR CONTROLLING TERMINAL - An apparatus and method for controlling a terminal is provided. A terminal control apparatus may set a virtual display space in an outer circumferential portion of the terminal and map at least one file to the virtual display space. Through this, a display region of the terminal may be expanded to an outer circumferential region of the terminal. | 05-10-2012 |
20120274608 | SIMPLIFIED LIGHT SENSING CIRCUIT, LIGHT SENSING APPARATUS INCLUDING THE LIGHT SENSING CIRCUIT, METHOD OF DRIVING THE LIGHT SENSING APPARATUS, AND IMAGE ACQUISITION APPARATUS AND OPTICAL TOUCH SCREEN APPARATUS INCLUDING THE LIGHT SENSING APPARATUS - In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data. | 11-01-2012 |
20130062602 | Oxide Semiconductor Transistors And Methods Of Manufacturing The Same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 03-14-2013 |