Patent application number | Description | Published |
20120007028 | POLYMER-SILICON COMPOSITE PARTICLES, METHOD OF MAKING THE SAME, AND ANODE AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - The present invention relates to polymer-silicon composite particles using silicon having high energy density, a method of making the same, an anode and a lithium secondary battery including the same. The silicon having high energy density is used as an anode active material to provide a lithium secondary battery having large capacity. Silicon-polymer composite particles having a metal plated on the surface thereof are provided to solve the problem that silicon has low electrical conductivity and a method of preparing the same is provided to produce an electrode having improved electrical conductivity. Furthermore, silicon-polymer composite particles having a metal coated on the surface thereof through electroless plating are prepared and an electrode is formed using the silicon-polymer composite particles. | 01-12-2012 |
20130221283 | LITHIUM SECONDARY BATTERY POSITIVE ELECTRODE MATERIAL FOR IMPROVING OUTPUT CHARACTERISTICS AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - Provided are a positive electrode active material for improving an output and a lithium secondary battery including the same. Particularly, graphite and conductive carbon which have shapes and sizes different from each other, may be simultaneously coated on a mixed positive electrode material of a 3-component system lithium-containing metal oxide having a layered structure and expressed as following Chemical Formula 1 and LiFePO | 08-29-2013 |
20130280610 | ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY COMPOSITE ELECTRODE FOR IMPROVING OUTPUT AND LITHIUM SECONDARY BATTERY INCLUDING THE ACTIVE MATERIAL - Provided is a composite electrode for a lithium secondary battery for improving output and a lithium secondary battery including the composite electrode, in which, in a composite electrode having two or more active materials mixed therein, an active material having a small particle size is included in the composite electrode by being coagulated and secondarily granulated so as to allow mixed active material particles to have a uniform size, and thus, electrical conductivity is improved to have high output characteristics. | 10-24-2013 |
Patent application number | Description | Published |
20100072536 | Non-volatile memory device and method of manufacturing the same - In a non-volatile memory device and a method of manufacturing the non-volatile memory device, a tunnel insulating layer, a charge trapping layer, a dielectric layer and a conductive layer may be sequentially formed on a channel region of a substrate. The conductive layer may be patterned to form a gate electrode and spacers may be formed on sidewalls of the gate electrode. A dielectric layer pattern, a charge trapping layer pattern, and a tunnel insulating layer pattern may be formed on the channel region by an anisotropic etching process using the spacers as an etch mask. Sidewalls of the charge trapping layer pattern may be removed by an isotropic etching process to reduce the width thereof. Thus, the likelihood of lateral diffusion of electrons may be reduced or prevented in the charge trapping layer pattern and high temperature stress characteristics of the non-volatile memory device may be improved. | 03-25-2010 |
20110003416 | LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 01-06-2011 |
20120018700 | Light Emitting Diode Having Vertical Topology And Method Of Making The Same - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 01-26-2012 |
20140091277 | LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 04-03-2014 |
Patent application number | Description | Published |
20090014777 | Flash Memory Devices and Methods of Manufacturing the Same - Provided are flash memory devices. Embodiments of such devices may include a tunnel insulator formed on a substrate, a charge-storage layer formed on the tunnel insulator, a lower buffer layer formed on the charge-storage layer, a blocking layer formed on the lower buffer layer, and a first gate electrode formed on the blocking layer. Such devices may include second gate electrode formed on the first gate electrode, such that the lower buffer layer includes a silicon-free insulator, the blocking layer includes oxides or ternary lanthanum compounds, and | 01-15-2009 |
20090096008 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La | 04-16-2009 |
20090159962 | Non-Volatile Memory Devices - Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well. | 06-25-2009 |
20110198685 | Non-Volatile Memory Devices - Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well. | 08-18-2011 |
Patent application number | Description | Published |
20090239367 | Nonvolatile memory device and method of fabricating the same - A method of fabricating a nonvolatile memory device includes forming a tunnel insulating layer on a semiconductor substrate, forming a charge storage layer on the tunnel insulating layer, forming a dielectric layer on the charge storage layer, the dielectric layer including a first aluminum oxide layer, a silicon oxide layer, and a second aluminum oxide layer sequentially stacked on the charge storage layer, and forming a gate electrode on the dielectric layer, the gate electrode directly contacting the second aluminum oxide layer of the dielectric layer. | 09-24-2009 |
20120305877 | NON-VOLATILE MEMORY DEVICE HAVING A RESISTANCE-CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME - A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width. | 12-06-2012 |
20120313066 | NONVOLATILE MEMORY DEVICES, NONVOLATILE MEMORY CELLS AND METHODS OF MANUFACTURING NONVOLATILE MEMORY DEVICES - A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film. | 12-13-2012 |
20140104472 | IMAGE SENSORS, IMAGE PROCESSING SYSTEMS INCLUDING SAME, AND METHODS OF OPERATING THE SAME - A method of operating an image sensor includes: generating a pixel signal according to intensity of incident light; and generating a digital pixel signal based on a comparison between the pixel signal and at least one reference current. Accordingly, a current output from a 1T pixel in the image sensor is sensed such that the influence of noise is reduced and a pixel signal is sensed more precisely. | 04-17-2014 |
20150049230 | IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A method of operating an image sensor includes generating a plurality of sub pixel signals using a sub pixel group. The sub pixel group includes a plurality of sub pixels and corresponds to a single pixel. The method further includes generating a pixel signal having a plurality of bits based on a result of comparing the sub pixel signals with a reference voltage. Each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor. | 02-19-2015 |
Patent application number | Description | Published |
20130225131 | DIGITAL DEVICE AND METHOD FOR PROVIDING ADDITIONAL SERVICE BY USING THE SAME - A digital processing device capable of receiving an additional service is disclosed. In one aspect, a digital processing device includes i) an input unit, inputting a signal, ii) a subscriber identity unit, storing an identity code of a communication operator and generating a communication network access request message, iii) an additional service identity unit, storing an identity code of an additional service operator and generating an additional service request message and v) a control unit, generating a control signal allowing one of the subscriber identity unit and the additional service identity unit to be selectively driven. In accordance with at least one inventive embodiment, a user of the digital processing device can receive an additional service without his or her subscription to a specific communication operator and use various additional services in addition to the additional services provided by the subscribed communication operator. | 08-29-2013 |
20140155035 | DIGITAL DEVICE AND METHOD FOR PROVIDING ADDITIONAL SERVICE BY USING THE SAME - A digital processing device capable of receiving an additional service is disclosed. In one aspect, a digital processing device includes i) an input unit, inputting a signal, ii) a subscriber identity unit, storing an identity code of a communication operator and generating a communication network access request message, iii) an additional service identity unit, storing an identity code of an additional service operator and generating an additional service request message and v) a control unit, generating a control signal allowing one of the subscriber identity unit and the additional service identity unit to be selectively driven. In accordance with at least one inventive embodiment, a user of the digital processing device can receive an additional service without his or her subscription to a specific communication operator and use various additional services in addition to the additional services provided by the subscribed communication operator. | 06-05-2014 |
Patent application number | Description | Published |
20090029738 | DIGITAL DEVICE AND METHOD FOR PROVIDING ADDITIONAL SERVICE BY USING THE SAME - A digital processing device capable of receiving an additional service is disclosed. In one aspect, a digital processing device includes i) an input unit, inputting a signal, ii) a subscriber identity unit, storing an identity code of a communication operator and generating a communication network access request message, iii) an additional service identity unit, storing an identity code of an additional service operator and generating an additional service request message and v) a control unit, generating a control signal allowing one of the subscriber identity unit and the additional service identity unit to be selectively driven. In accordance with at least one inventive embodiment, a user of the digital processing device can receive an additional service without his or her subscription to a specific communication operator and use various additional services in addition to the additional services provided by the subscribed communication operator. | 01-29-2009 |
20090050886 | Test device, SRAM test device, semiconductor integrated circuit device and methods of fabricating the same - A test device, SRAM test device, semiconductor integrated circuit, and methods of fabricating the same are provided. The test device may include a first test active region extending in one direction on a semiconductor substrate, a second test active, apart from the first test active region, extending in one direction on a semiconductor substrate, a plurality of test gate lines crossing the test active regions, a plurality of test contacts on at least one of the test active regions and test gate lines, a plurality of conducting regions electrically connecting the test contacts, and a plurality of conductive wiring lines interconnecting the plurality of test contacts, wherein an open contact chain, which electrically connects the plurality of test contacts, is formed. | 02-26-2009 |
20090167319 | TEST APPARATUS FOR DETERMINING IF ADJACENT CONTACTS ARE SHORT-CIRCUITED AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES THAT INCLUDE SUCH TEST APPARATUS - A test apparatus includes a plurality of pairs of test contacts on a semiconductor substrate; a first test structure which includes a plurality of first test interconnection layers and a first body interconnection layer that is electrically connected to the first test interconnection layers, each of the first test interconnection layers being electrically connected to at least one test contact; and a second test structure which includes a plurality of second test interconnection layers and a second body interconnection layer that is electrically connected to the second test interconnection layers, each of the second test interconnection layers being electrically connected to at least one test contact. | 07-02-2009 |
20110302488 | MOBILE TERMINAL AND METHOD OF CONTROLLING MOBILE TERMINAL - A mobile terminal is provided that includes: a display unit configured to display a webpage having a plurality of sections; a wireless communication unit configured to provide Internet access; a memory unit configured to store history information regarding usage of the webpage; and a control unit configured to control a display of a preferred section of the plurality of sections of the webpage upon an access of the webpage such that the preferred section is visually distinguishable from other sections of the plurality of sections, wherein display of the preferred section is based on the stored history information. | 12-08-2011 |
20130257794 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An LCD device includes a plurality of gate lines and data lines cross-arranged on a lower substrate to define a plurality of pixels, a pixel electrode disposed in each of the pixels, a plurality of common electrode blocks pattern-formed that generate an electric field with the pixel electrode and sensing a touch of a user, a plurality of sensing lines, a plurality of pad parts arranged to be separated from each other at predetermined intervals along a corresponding sensing line, and having a line width thicker than the sensing line, and a contact part disposed between a corresponding pad part and a corresponding common electrode block, and electrically connecting a corresponding sensing line and the common electrode block. When the sensing lines are electrically connected to one of the common electrode blocks, the sensing lines are electrically insulated from the other common electrode blocks. | 10-03-2013 |
Patent application number | Description | Published |
20120199835 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor array panel and a manufacturing method thereof, and a thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a first conductive layer disposed on the substrate; a second conductive layer overlapping at least a portion of the edge of the first conductive layer on the first conductive layer and including a first portion overlapping the first conductive layer and a second portion not overlapping the first conductive layer; a first insulating layer disposed on the second conductive layer and having a contact hole exposing at least a portion of a boundary between the first portion and the second portion; and a third conductive layer disposed on the first insulating layer and simultaneously contacting the first portion and the second portion that are exposed through the contact hole. | 08-09-2012 |
20120249914 | DISPLAY APPARATUS HAVING IMPROVED STATIC DISCHARGE CHARACTERISTICS - A display apparatus includes a first substrate including a plurality of pixels, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. Each pixel includes a gate electrode, a gate insulating layer, a semiconductor pattern, a source electrode, a drain electrode, a first electrode, and a second electrode. The first electrode includes a first portion overlapping the drain electrode and a second portion outside the first portion, and the second electrode does not overlap the first portion of the first electrode. The first electrode or the second electrode is formed as a single unitary structure. | 10-04-2012 |
20140009707 | DISPLAY APPARATUS HAVING IMPROVED STATIC DISCHARGE CHARACTERISTICS - A display apparatus includes a first substrate including a plurality of pixels, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. Each pixel includes a gate electrode, a gate insulating layer, a semiconductor pattern, a source electrode, a drain electrode, a first electrode, and a second electrode. The first electrode includes a first portion overlapping the drain electrode and a second portion outside the first portion, and the second electrode does not overlap the first portion of the first electrode. The first electrode or the second electrode is formed as a single unitary structure. | 01-09-2014 |