Patent application number | Description | Published |
20080197413 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer. | 08-21-2008 |
20090098005 | Method of manufacture Ni-doped TiO2 nanotube-shaped powder and sheet film comprising the same - The present invention provides a method of manufacturing Ni-doped TiO | 04-16-2009 |
20110198592 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR - Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask. | 08-18-2011 |
20130075731 | MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THEM - Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor. | 03-28-2013 |
20130089972 | METHOD FOR FORMING NANOCRYSTALLINE SILICON FILM - Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate. | 04-11-2013 |
20140001464 | OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME | 01-02-2014 |
20140151690 | SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). | 06-05-2014 |
20140152936 | SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). | 06-05-2014 |
20140159035 | TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor. | 06-12-2014 |
20150034942 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode. | 02-05-2015 |
20150037955 | TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, AND ELECTRONIC DEVICE INCLUDING THE TRANSISTOR - Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics. | 02-05-2015 |
20150060990 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS - Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer. | 03-05-2015 |