Patent application number | Description | Published |
20080197413 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer. | 08-21-2008 |
20090098005 | Method of manufacture Ni-doped TiO2 nanotube-shaped powder and sheet film comprising the same - The present invention provides a method of manufacturing Ni-doped TiO | 04-16-2009 |
20110198592 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR - Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask. | 08-18-2011 |
20130075731 | MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THEM - Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor. | 03-28-2013 |
20130089972 | METHOD FOR FORMING NANOCRYSTALLINE SILICON FILM - Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate. | 04-11-2013 |
20140001464 | OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME | 01-02-2014 |
20140151690 | SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). | 06-05-2014 |
20140152936 | SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). | 06-05-2014 |
20140159035 | TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor. | 06-12-2014 |
20150034942 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode. | 02-05-2015 |
20150037955 | TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, AND ELECTRONIC DEVICE INCLUDING THE TRANSISTOR - Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics. | 02-05-2015 |
20150060990 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS - Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer. | 03-05-2015 |
20150228967 | SILICON OXIDE-CARBON COMPOSITE, METHOD OF MANUFACTURING THE COMPOSITE, AND ENERGY STORAGE DEVICE HAVING THE COMPOSITE - Provided are a silicon oxide-carbon composite, a method of preparing the same, and an energy storage device containing the same. In the method of preparing a silicon oxide-carbon composite, a reaction solution containing an organic solvent including an aromatic compound is provided. Crystalline carbon structures are formed by generating plasma in the reaction solution. A slurry is formed by adding silicon halide and a polyol in the reaction solution in which the crystalline carbon structures are dispersed. The slurry is separated from the organic solvent and subjected to thermal treatment. | 08-13-2015 |
20150228983 | CRYSTALLINE CARBON STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ENERGY STORAGE DEVICE HAVING THE SAME - Provided are a carbon structure, a method of manufacturing the carbon structure, and an energy storage device having the carbon structure. According to the method of manufacturing the carbon structure, a reaction solution containing a catalyst and an organic solvent containing an aromatic compound is provided. Plasma is generated in the reaction solution, thereby forming a crystalline carbon structure. | 08-13-2015 |
Patent application number | Description | Published |
20140313675 | ELECTRONIC CONTROL APPARATUS FOR VEHICLE USING OVERMOLDING AND MANUFACTURING METHOD THEREOF - The present disclosures provides an electronic control apparatus for a vehicle using overmolding in which a heat radiating plate is attached to an opposite side of a part requiring heat radiation in a printed circuit board (PCB) and a part other than the part, to which the heat radiating plate is attached, is overmolded so as to directly discharge heat to the air through the heat radiating plate such that a heat radiation effect is excellent, the heat radiating plate is attached in advance and then a housing is formed of mold resin such that a manufacturing process is simplified, and a printed circuit board (PCB) is surrounded by mold resin such that a waterproof function is excellent, and a manufacturing method thereof. | 10-23-2014 |
20140334104 | ELECTRONIC CONTROL APPARATUS FOR VEHICLE - The present disclosure relates to an electronic control apparatus for a vehicle, and the electronic control apparatus includes: an electronic control board which has a top side on which a heating element is mounted; a heat sink which radiate heat generated from the heating element to the outside; at least one screw which couples the electronic control board and the heat sink; and a heat radiating pad which transfer heat of the heating element to the heat sink, in which a stepped portion having a predetermined depth is formed on the contact surface of the heat sink so that the heat radiating pad is inserted thereto, and the depth of the stepped portion is formed to be smaller than a thickness of the heat radiating pad so that the heat radiating pad is pressed and inserted between the electronic control board and the heat sink. | 11-13-2014 |
20140334115 | ELECTRONIC CONTROL APPARATUS FOR VEHICLE - The present disclosure relates to an electronic control apparatus for a vehicle, and the electronic control apparatus of the present disclosure includes: an electronic control element which includes an electronic control board which electrically controls each part of a vehicle, and a heating element which is positioned on a surface of the electronic control board; a cover and a base which accommodate the electronic control element; and a connector which is coupled to the electronic control element, in which an edge part where the cover and the base come into contact with each other is configured in a multi-step bent shape. | 11-13-2014 |
20140334116 | ELECTRONIC CONTROL APPARATUS FOR VEHICLE - The present disclosure relates to an electronic control apparatus for a vehicle, and the electronic control apparatus of the present disclosure includes: an electronic control element which includes a printed circuit board (PCB) and electronic components installed on a surface of the PCB; a cover and a base which accommodate the electronic control element; and a connector which is coupled to the electronic control element, wherein a front end portion having a protrusion is formed at an edge of the cover so that the PCB is inserted and mounted between the protrusion of the cover and an edge of the base, a projection portion is formed at a rear end portion of the edge of the base where the cover and the base come into contact with each other, and the cover and the projection portion of the base come into contact with each other so as to form a predetermined space between the front end portion and the rear end portion so that a sealing member is inserted into the predetermined space. | 11-13-2014 |
20140362533 | ELECTRONIC CONTROL APPARATUS FOR VEHICLE - The present disclosure relates to an electronic control apparatus into which an printed circuit board is inserted in a sliding manner, and the electronic control apparatus of the present disclosure includes: an printed circuit board (PCB) and has one surface on which a heating element is mounted, and a corresponding surface on which a heat radiating material is applied; a connector cover which includes a connector electrically connected and coupled to the electronic circuit board, and a cover coupling portion for coupling a housing; and a housing body to which the PCB is tightly attached and assembled in a sliding manner, in which one or more projections are formed on both side surfaces in the housing body, one or more grooves are formed in both side surfaces of the electronic circuit board, the PCB is inserted and guided into the housing body in a sliding manner. | 12-11-2014 |
20150146347 | ELECTRONIC CONTROL DEVICE FOR VEHICLE - The present invention relates to an electronic control device which is an electronic control device such as an engine ECU for a vehicle and has a tight sealing structure between a case and a connector. The present invention provides an electronic control device for a vehicle, which implements a new type of sealing manner in which a space to be filled with a sealing material is formed between a case side dam and a connector side dam when a case and a connector of the electronic control device are assembled, and the sealing material is applied in the space, which is formed as described above, such that airtightness for an assembly region between the case and the connector is maintained, thereby securing sufficient sealing areas because of enlarged sealing sections, and achieving stable sealing quality and improving quality. | 05-28-2015 |