Patent application number | Description | Published |
20110057991 | Inkjet head and manufacturing method thereof - There is provided an inkjet head and a manufacturing method thereof. The inkjet head includes an upper substrate formed of a silicon material and having an ink chamber storing ink provided therein; an intermediate substrate bonded to the upper substrate, formed of a low temperature co-fired ceramic material, and having a connection path and a restrictor provided therein while the connection path and the restrictor are connected to the ink chamber; and a lower substrate bonded to the intermediate substrate, formed of a silicon material, and having a nozzle connected to the connection path provided therein. According to the inkjet head and the manufacturing method thereof, the densification and facilitation of bonding between substrates are achieved by using anodic bonding between a silicon substrate and a ceramic substrate, thereby improving manufacturing yield. | 03-10-2011 |
20110063360 | Inkjet print head and method of measuring temperature thereof - An inkjet print head includes a plurality of pressure chambers receiving and storing ink which is to be discharged to a nozzle, a piezoelectric body interposing a membrane with the pressure chamber, the piezoelectric body providing a driving force for discharging ink to each of the pressure chambers, and a measuring unit measuring capacitance of the piezoelectric body so that a temperature of ink being discharged to the nozzle is measured. | 03-17-2011 |
20110232089 | Method of manufacturing inkjet print head - There is provided a method of manufacturing an inkjet print head. The method includes providing a head portion having a dummy portion disposed on a surface of a pressure area pressurizing an ink chamber, a nozzle connected to the ink chamber for ink ejection and the ink chamber for ink supply to the nozzle, and removing the dummy portion. The method allows for the improvement of ink ejection and nozzle density. Also, the method allows for the forming of a thin-type head portion using the dummy portion. | 09-29-2011 |
20110265297 | Method of manufacturing inkjet head - There is provided a method of manufacturing an inkjet head. A method of manufacturing an inkjet head according to an aspect of the invention may include: forming a piezoelectric actuator on a dummy substrate; cutting the piezoelectric actuator into head cell units of an inkjet head; preparing an inkjet head substrate including an ink chamber formed at a position corresponding to the piezoelectric actuator; bonding the dummy substrate and the inkjet head substrate to each other so that the piezoelectric actuator and the ink chamber correspond to each other; and removing the dummy substrate. | 11-03-2011 |
20110293452 | Micro-ejector and method for manufacturing the same - There are provided a micro-ejector and a method for manufacturing the same. The micro-ejector according to the present invention includes a passage plate including a barrier rib portion disposed in an upper space in a chamber and a protruding portion disposed in a lower space in the chamber and forming a passage in the same direction as a fluid discharging direction together with the barrier rib portion; and an actuator formed on the upper portion of the passage plate to correspond to the chamber and providing a driving force of discharging the fluid to the nozzle from the chamber. | 12-01-2011 |
20110316939 | Micro-ejector - There is provided a micro-ejector. The micro-ejector according to an exemplary embodiment of the present invention may include an ejection device including a passage for ejecting fluid contained therein, and a piezoelectric actuator providing a driving force for ejecting fluid, a mounting plate including a passage for providing fluid to the ejection device formed therein, and a mounting groove on which the ejection device is mounted, and a connection member formed on the mounting plate, and adopted for connecting the piezoelectric actuator to an external power source. | 12-29-2011 |
20110316941 | Ink path structure and inkjet head including the same - There is provided an ink path structure, including: a pressure chamber storing ink introduced thereinto to discharge the ink to a nozzle; and a path discharging the ink by pressure generated within the pressure chamber and then supplying the ink to the pressure chamber and being repeatedly expanded and contracted in a direction toward the pressure chamber to attenuate a residual pressure wave remaining in the pressure chamber. | 12-29-2011 |
20120058026 | Microfluidic ejection device and method of manufacturing the same - There are disclosed a microfluidic ejection device and a method of manufacturing the same. The microfluidic ejection device includes a flow path plate having an inlet into which a microfluid is drawn, a pressure chamber connected with the inlet and having formed therein, a plurality of chamber units divided by a plurality of partitions, and a nozzle connected with the pressure chamber and ejecting the microfluid by integrating the microfluid, having passed through the plurality of chamber units, into a single flow path; and actuators formed on an upper portion of the flow path plate so as to respectively correspond to the plurality of chamber units and providing driving force for ejecting the microfluid from the pressure chamber to the nozzle. The microfluidic ejection device has superior microfluidic ejection performance because variations in pressure within the pressure chamber can be accurately adjusted. | 03-08-2012 |
20120147097 | MICRO-EJECTOR AND METHOD OF MANUFACTURING THE SAME - There are provided a micro-ejector and a method of manufacturing the same. The micro-ejector includes an upper substrate including an inlet into which a fluid is drawn from the outside and a chamber groove; a lower substrate including a reservoir groove to provide a reservoir storing the fluid drawn through the inlet; a piezoelectric actuator formed on the upper substrate and supplying a driving force for fluid ejection to a chamber; and at least one support protruding from a bottom of the reservoir groove so as to support the upper substrate. | 06-14-2012 |
20120153054 | MICRO-EJECTING APPARATUS - There is provided a micro-ejecting apparatus. The micro-ejecting apparatus includes: an ejector including a channel therein and a driving part for ejecting a fluid to the outside; a body including a plurality of mounting parts on which the ejector is mounted; and guiding members fixed on the body and corresponding to the plurality of mounting parts so as to determine the positions of the plurality of mounting parts in the body. | 06-21-2012 |
Patent application number | Description | Published |
20090200565 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including Al | 08-13-2009 |
20100117061 | NITRIDE SEMICONDUCTOR DEVICE - There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level. | 05-13-2010 |
20100163912 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer. | 07-01-2010 |
20110012145 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including Al | 01-20-2011 |
20110248306 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH LIGHT EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer. | 10-13-2011 |
20120097184 | METHOD FOR RECYCLING WAFER - A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl | 04-26-2012 |
20120171815 | CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME - Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers. | 07-05-2012 |
20120261687 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer. | 10-18-2012 |
20120322188 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate. | 12-20-2012 |
20130020555 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE - A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of Al | 01-24-2013 |
20130098293 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers. | 04-25-2013 |
20130099248 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer. | 04-25-2013 |
20130099255 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE THIN FILM, AND FABRICATION METHOD THEREOF - There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction. | 04-25-2013 |
20130221398 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure. | 08-29-2013 |
20130244353 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer. | 09-19-2013 |
20130255578 | CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR - A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate. | 10-03-2013 |
20130316481 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned. | 11-28-2013 |
20140231863 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer. | 08-21-2014 |
20140235005 | METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREWITH - A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration. | 08-21-2014 |
20140346437 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of In | 11-27-2014 |
20140370634 | METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR THIN FILM AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR DEVICE USING THE SAME - A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein. | 12-18-2014 |
20150200332 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. | 07-16-2015 |
20150207025 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A method of manufacturing a semiconductor light emitting device includes forming, on a substrate, a first region of a light emitting structure and the light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A protective layer is formed on the first region in a first chamber. The substrate with the first region and the protective layer formed thereon is transferred to a second chamber. A second region is formed on the first region. The first and second regions are disposed in a direction perpendicular to the substrate. The protective layer is grown above a defective region included in the first region and removed before or while the second region is formed. | 07-23-2015 |
20150207034 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency. | 07-23-2015 |
20150221826 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits. | 08-06-2015 |
20150233821 | APPARATUS FOR EVALUATING QUALITY OF CRYSTAL, AND METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING THE APPARATUS - An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device. | 08-20-2015 |
20150240358 | SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME - There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface. | 08-27-2015 |
20150311062 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MAINTAINING DEPOSITION APPARATUS - A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer. | 10-29-2015 |
20160099378 | METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature. | 04-07-2016 |
20160111596 | LIGHTING SYSTEM - A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature. | 04-21-2016 |