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| 20120135275 | MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM - A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric. | 05-31-2012 |
| 20120199470 | MTJ FILM AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an MTJ film includes forming a first ferromagnetic layer; forming a tunnel barrier layer over the first ferromagnetic layer; and forming a second ferromagnetic layer over the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni stacked film having perpendicular magnetic anisotropy. The step for forming a tunnel barrier layer includes repeating unit film formation treatment n times (n is an integer of 2 or more). The unit film formation treatment includes the steps of: depositing an Mg film by a sputtering method; and oxidizing the deposited Mg film. A film thickness of the deposited Mg film in the first unit film formation treatment is 0.3 nm or more and 0.5 nm or less. A film thickness of the deposited Mg film in the second unit film formation treatment or later is 0.1 nm or more and 0.45 nm or less. | 08-09-2012 |
| 20130075846 | MAGNETIC MEMORY - A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer. | 03-28-2013 |
| 20130234268 | MAGNETIC MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - The present invention suppresses short circuits of a magnetic memory cell and a deterioration of the characteristics of a magnetic layer. A magnetic memory cell includes: a data storage layer; a tunnel barrier layer formed on the data storage layer; a reference layer formed on the tunnel barrier layer so as to cover a part of the tunnel barrier layer; and a metallic oxide layer formed on the tunnel barrier layer without covering the reference layer. The metallic oxide layer contains an oxide of a material of a contact part of the reference layer with the tunnel barrier layer. | 09-12-2013 |
| 20130285176 | MAGNETIC BODY DEVICE AND MANUFACTURING METHOD THEREOF - A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region. | 10-31-2013 |
| 20150207063 | SEMICONDUCTOR DEVICE - The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW | 07-23-2015 |
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| 20130187248 | MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY - The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film. | 07-25-2013 |
| 20140346518 | MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM - A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction. | 11-27-2014 |
| 20150263276 | MAGNETIC MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a magnetic memory cell, includes forming a tunnel barrier layer over a first magnetic layer, forming a second magnetic layer over the tunnel barrier layer, forming a mask over the second magnetic layer, etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer, and forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer. | 09-17-2015 |
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| 20120028486 | Wire Cover, Wiring Method of Wires and Electrical Connector - The invention provides a wire cover, a wiring method and an electrical connector that can ensure routing of wires even in a limited space. The connector includes a housing, a lever, and a wire cover. The lever is mounted to the housing, and the wire cover is mounted to a side of a back surface of the housing. The wire cover includes a cover body, a wire routing passageway, and a hood portion. The cover body includes a plurality of wire receiving passageways positioned in one direction, while the wire routing passageway is directed into an inside of the cover body. The hood portion protrudes from a circumference of the wire routing passageway and provides a leading direction out of the wire routing passageway. The hood portion extends in a direction other than a direction of extension from a front surface and the back surface of the cover body. | 02-02-2012 |
| 20120028487 | Wire Cover and Electrical Connector - A wire cover has a cover body, a wire routing passageway and a hood. The cover body includes a plurality of wire receiving passageways positioned in one direction. The wire routing passageway is directed into an inside of the cover body. The hood protrudes from a circumference of the wire routing passageway and controls a leading direction out of the wire routing passageway wherein the hood has a different thicknesses between a base on a side of the cover body and a tip on another side of the cover body. | 02-02-2012 |
| 20120164866 | Connector Member - A connector member that is improved in durability and reliability by preventing fracture of hinges of a retainer and can be smoothly mated with a mating connector. The connector member having a lance housing. a connector housing, and the retainer. The lance housing includes a plurality of terminal receiving slots, a recess disposed at a rear of the plurality of terminal receiving slots and in a portion of the lance housing near a rear surface thereof, and a pair of guide walls positioned opposite each other along a top surface of the lance housing. The connector housing includes a housing recess opening at one side for housing the lance housing. The retainer is fitted into the recess of the lance housing and swingably connected to the lance housing by a hinge. | 06-28-2012 |
| 20130065446 | Electrical Connector - An electrical connector is provided. The electrical connector includes a comprising a first housing, a second housing removably fittable to the first housing, and a lock block disposed on the second housing and engageable with the first housing to secure the second housing at a predetermined position with the first housing. The lock block includes a first groove extending along a length of the lock block, a side portion in contact with the first groove, an end portion in contact with the first groove and orthogonal to the side portion, a side lock disposed on the side portion and securable with the first housing, and a first lock that is provided integrally with the end portion and secured to the first housing. | 03-14-2013 |
