Patent application number | Description | Published |
20130185608 | SCAN CHAIN ACCESS IN 3D STACKED INTEGRATED CIRCUITS - Stacked integrated circuits (ICs) having a base component and secondary component are tested. The base component has a scan input pad, a scan output pad, a base scan chain, and a base chain access block including a base chain select multiplexor and a base bypass multiplexor. The secondary component has a secondary scan chain and a secondary chain access block including a secondary chain select multiplexor and a secondary bypass multiplexor. The secondary chain select multiplexor is configured to receive input directly from the base component and another component. The base and secondary chain access blocks are configured to selectively access the base scan chain and/or the secondary scan chain. | 07-18-2013 |
20130197851 | TEST CONTROLLER FOR 3D STACKED INTEGRATED CIRCUITS - Stacked IC devices (or 3D semiconductor devices) have two or more semiconductor devices stacked so they occupy less space than two or more conventionally arranged semiconductor devices. Access to test infrastructures of stacked ICs is provided, regardless of configuration, while using a reduced number of interface pins. A master test controller is provided in a base die and at least one slave test controller is provided in another die. The master test controller is coupled to a test data control (TDC) bus and is configured to broadcast test instructions, test data, and an ID of a slave test controller. The slave test controller is also coupled to the TDC bus, is configured to recognize the broadcast test instructions and test data addressed to the slave test controller, and responds to the instructions when the instructions are addressed to the slave test controller. | 08-01-2013 |
20140208279 | SYSTEM AND METHOD OF TESTING THROUGH-SILICON VIAS OF A SEMICONDUCTOR DIE - A method includes contacting a first group of through-silicon vias (TSVs) contacts with a multi-contact probe and applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, where the first group of TSV contacts corresponds to a first group of TSVs. The method also includes determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV test result. | 07-24-2014 |