Patent application number | Description | Published |
20130277666 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate; a gate line positioned on the substrate and including a gate electrode; a gate insulating layer positioned on the gate line; an oxide semiconductor layer positioned on the substrate; a source electrode and a drain electrode positioned on the oxide semiconductor layer; a first insulating layer positioned on the source electrode and the drain electrode and including a first contact hole; a data line positioned on the first insulating layer and intersecting the gate line; and a pixel electrode over the first insulating layer. The source electrode and the drain electrode each comprise a metal oxide. The data line is electrically connected to the source electrode through the first contact hole. | 10-24-2013 |
20140175424 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer. | 06-26-2014 |
20140183535 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate, a gate line disposed on the substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor disposed on the gate insulating layer, a data line disposed on the semiconductor and including a source electrode, a drain electrode disposed on the semiconductor and opposite to the source electrode, a color filter disposed on the gate insulating layer, the data line and the drain electrode, an overcoat disposed on the color filter and including an inorganic material, a contact hole defined in the color filter and the overcoat, where the contact hole exposes the drain electrode, and a pixel electrode disposed on the overcoat and connected through the contact hole to the drain electrode, in which a plane shape of the contact hole in the overcoat and a plane shape of the contact hole in the color filter are substantially the same as each other. | 07-03-2014 |
20150053989 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - A display substrate includes a base substrate, a common line on the base substrate, a first insulation layer covering the common line and having a first insulating material, a conductive pattern on the first insulation layer and including a source electrode and a drain electrode, a second insulation layer covering the drain electrode and the common line, and including a lower second insulation layer having a second insulating material and an upper second insulation layer having the first insulating material, a first electrode electrically connected to the drain electrode through a first contact hole in the second insulation layer, and a second electrode electrically connected to the common line through a second contact hole in the first and second insulation layers. The upper and lower second insulation layers on the drain electrode have a first hole and a second hole respectively that form the first contact hole. | 02-26-2015 |
20150179802 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A thin film transistor includes a gate electrode, an active pattern over the gate electrode and including an oxide semiconductor, an etch-stop layer covering the active pattern, a source electrode on the etch-stop layer, a drain electrode on the etch-stop layer and spaced from the source electrode, and an active protection pattern between the etch-stop layer and the active pattern and electrically coupled to the source electrode and the drain electrode. | 06-25-2015 |
20160043105 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - According to an exemplary embodiment, a display substrate includes a gate metal pattern comprising a gate electrode, an active pattern disposed on the gate pattern and a source metal pattern disposed on the active pattern. The source metal pattern includes a first lower pattern disposed on the active pattern, a second lower pattern disposed on the first lower pattern, a low-resistance metal pattern disposed on the second lower pattern, and an upper pattern disposed on the low-resistance metal pattern. The first lower pattern, the second lower pattern, and the upper pattern each include a material that is the same. | 02-11-2016 |
20160138169 | METHOD OF FORMING A FINE PATTERN - A method of forming a fine pattern includes providing a first metal layer on a base substrate, providing a first passivation layer on the first metal layer, providing a mask pattern on the first passivation layer, providing a partitioning wall pattern having a reverse taper shape by etching the first passivation layer, coating a composition having a block copolymer between the partitioning wall patterns adjacent each other, providing a self-aligned pattern by heating the composition, and providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask. | 05-19-2016 |
Patent application number | Description | Published |
20150070643 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes: a substrate defining transistor and wiring areas; a thin film transistor in the transistor area and including a gate electrode, an active layer, and source and drain electrodes; an etch prevention layer in the transistor area, absent in the wiring area and covering the active layer, and first and second contact holes defined in the etch prevention layer and through which the active layer is electrically coupled to the source and drain electrodes; a first wiring layer in the wiring area; a first insulating layer which covers the gate electrode and the first wiring layer, and a third contact hole defined in the first insulating layer in the wiring area and exposing the first wiring layer; and a second wiring layer on the first insulating layer and in the wiring area, and electrically coupled to the first wiring layer via the third contact hole. | 03-12-2015 |
20150357356 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array substrate and a method of manufacturing the thin film transistor array substrate are provided. The thin film transistor array substrate includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor pattern disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor pattern and spaced apart from each other; and a hard mask pattern disposed on the source electrode and the drain electrode. | 12-10-2015 |
20160035765 | METHOD OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE - A method of fabricating metal wiring, including: sequentially forming first and second conductive layers on a substrate; forming a first photosensitive film pattern on the first and second conductive layers; forming first and second conductive patterns by etching parts of the first and second conductive layers by using the first photosensitive film pattern as a mask; forming a second photosensitive film pattern positioned inside the first photosensitive film pattern by a predetermined interval by ashing the first photosensitive film pattern; etching an exposed first conductive pattern by using the second photosensitive film pattern as a mask; and removing the second photosensitive film pattern. | 02-04-2016 |
Patent application number | Description | Published |
20120164345 | Method of Manufacturing Retarder - A method of manufacturing a patterned retarder includes forming a retarder material layer by applying a retarder material to a substrate; drying the retarder material layer at a first temperature; exposing the retarder material layer to linearly-polarized UV, wherein the retarder material layer has an optical anisotropic property; and heat treating the retarder material layer at a second temperature higher than the first temperature to increase the optical anisotropic property of the retarder material layer. | 06-28-2012 |
20140368775 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An alignment film for liquid crystal display device includes a first portion positioned towards to the liquid crystal layer and a second portion positioned away from the liquid crystal layer. The first portion provides improved anchoring force while the second portion exhibits a lower volume resistance than the first portion. Thus, AC image sticking and DC image sticking can be minimized at the same time. | 12-18-2014 |
20140368779 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing new liquid crystal display device according to an embodiment of the present invention. Firstly, an alignment film is formed on a substrate. The alignment film is divided into a first alignment film formed using, as a precursor, liquid-state polyimide that contains a photodecomposition substance and a second alignment film formed using, as a precursor, a polyamic acid that does not contain a photodecomposition substance. UV light is irradiated to the alignment film, and decomposed substances formed by irradiation of the UV light is removed by an at least two-step removing process. By the method of manufacturing a liquid crystal display device according to the exemplary embodiment of the present disclosure, bright spots are minimized in pixels and a brightness of black is lowered, so that a liquid crystal display device with a high contrast ratio can be realized. | 12-18-2014 |