Patent application number | Description | Published |
20080291584 | Magnetic Tunnel Junctions Including Crystalline and Amorphous Tunnel Barrier Materials - Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al | 11-27-2008 |
20090046493 | METHOD AND APPARATUS FOR FABRICATING SUB-LITHOGRAPHY DATA TRACKS FOR USE IN MAGNETIC SHIFT REGISTER MEMORY DEVICES - In one embodiment, the invention is a method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices. One embodiment of a memory device includes a first stack of dielectric material formed of a first dielectric material, a second stack of dielectric material surrounding the first stack of dielectric material and formed of at least a second dielectric material, and at least one data track for storing information, positioned between the first stack of dielectric material and the second stack of dielectric material, the data track having a high aspect ratio and a substantially rectangular cross section. | 02-19-2009 |
20090317923 | SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits. | 12-24-2009 |
20090324814 | MgO Tunnel Barriers and Method of Formation - MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation. | 12-31-2009 |
20100028530 | High Performance Magnetic Tunnel Barriers with Amorphous Materials - A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel barrier. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous. Magnetic tunnel junctions formed from the amorphous magnetic layer, the tunnel barrier, and an additional ferromagnetic layer have tunneling magnetoresistance values of up to 200% or more. | 02-04-2010 |
20100330707 | Robust Self-Aligned Process for Sub-65nm Current-Perpendicular Junction Pillars - A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure. | 12-30-2010 |
20110124133 | SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRICATING THE MEMORY ELEMENT - A method of fabricating a magnetic memory element includes forming a plurality of magnetic layers having a perpendicular magnetic anisotropy component, in which the plurality of magnetic layers includes a first magnetic layer having an alloy of a rare-earth metal and a transition metal, and a second magnetic layer. | 05-26-2011 |
20110140762 | Resistive Switching in Nitrogen-doped MgO - Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg | 06-16-2011 |
20110147866 | SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure. | 06-23-2011 |
20120256435 | ROBOTIC DEVICE FOR SUBSTRATE TRANSFER APPLICATIONS - A device for use in the semiconductor industry includes a robotic arm whose end effector includes at least two prongs designed to hold a substrate carrier. A pushing member located between the prongs can move independently of the prongs and is configured to exert force against the substrate carrier while the prongs are retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the prongs are retracted. Each of the prongs may include a claw or gripping member for grasping the substrate carrier. | 10-11-2012 |
20130009261 | SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRICATING THE MEMORY ELEMENT - A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers. | 01-10-2013 |
20130164113 | ROBOTIC DEVICE FOR SUBSTRATE TRANSFER APPLICATIONS - A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted. | 06-27-2013 |
20130316543 | METHOD AND APPARATUS FOR SUBSTRATE-MASK ALIGNMENT - A shadow masking device for use in the semiconductor industry includes self-aligning mechanical components that permit shadow masks to be exchanged while maintaining precise alignment with the target substrate. The misregistration between any two of the various layers in the formed structure can be kept to less than 40 microns. | 11-28-2013 |
20140008743 | SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer. | 01-09-2014 |
20140009993 | DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING MAGNETIC MULTILAYERS WITH ENGINEERED INTERFACES - Magnetic wires that include cobalt, nickel, and platinum layers show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. These wires exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the platinum and cobalt layers are arranged. | 01-09-2014 |
20140009994 | DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING ARTIFICIAL ANTIFERROMAGNETICALLY COUPLED MULTILAYERS WITH ENGINEERED INTERFACES - Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged. | 01-09-2014 |
20140266391 | CONTROLLING THE CONDUCTIVITY OF AN OXIDE BY APPLYING VOLTAGE PULSES TO AN IONIC LIQUID - Electrolyte gating with ionic liquids is a powerful tool for inducing conducting phases in correlated insulators. An archetypal correlated material is VO | 09-18-2014 |