Patent application number | Description | Published |
20080230092 | METHOD AND APPARATUS FOR SINGLE-SUBSTRATE CLEANING - A single-substrate cleaning apparatus and method of use are described. In an embodiment of the present invention, a liquid cleaning solution is dispensed in small volumes to form a substantially uniform static liquid layer over a substrate surface by atomizing the viscous liquid with an inert gas in a two-phase nozzle. In another embodiment of the present invention, after a layer of the cleaning solution is formed over the substrate to be cleaned, acoustic energy is applied to the substrate to improve the cleaning efficiency. In a further embodiment, cleaning solution precipitates are avoided by dispensing de-ionized water with a spray nozzle to gradually dilute the cleaning solution prior to dispensing de-ionized water with a stream nozzle. | 09-25-2008 |
20080286697 | Method and apparatus for processing a wafer - A method of a single wafer wet/dry cleaning apparatus comprising:
| 11-20-2008 |
20080314424 | Method and apparatus for wafer cleaning - An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer. | 12-25-2008 |
20090020144 | METHOD AND APPARATUS FOR CLEANING A SUBSTRATE - An apparatus for wet processing individual substrates comprising; a means for holding the substrate; a means for providing acoustic energy to a non-device side of the substrate; and a means for flowing a fluid onto a device side of the substrate. | 01-22-2009 |
20090026150 | Method and apparatus for chemical mixing in a single wafer process - A method of and apparatus for mixing chemicals in a single wafer process. According to the present invention a chemical is fed into a valve system having a tube of a known volume. The chemical is fed into the valve system to fill the tube with a chemical to generate a measured amount of the chemical. The measured amount of chemical is then used in a single wafer process. | 01-29-2009 |
20090111259 | METHODS FOR FORMING CONNECTIVE ELEMENTS ON INTEGRATED CIRCUITS FOR PACKAGING APPLICATIONS - Methods for forming connective elements on integrated circuits for packaging applications are provided herein. In some embodiments, a method of forming connective elements on an integrated circuit for flipchip packaging may include providing a resist layer on the integrated circuit; forming a plurality of holes through the resist layer; filling the plurality of holes with conductive material; and stripping at least a portion of the resist layer using a stripping solution containing acetic anhydride and ozone to expose the connective elements. | 04-30-2009 |
20090111277 | WET PHOTORESIST STRIP FOR WAFER BUMPING WITH OZONATED ACETIC ANHYDRIDE - Methods for stripping a photoresist from a substrate and for fabricating wafer bumps are provided herein. In some embodiments, a method of stripping a photoresist from a substrate includes providing a substrate having a patterned photoresist deposited thereon; and stripping the photoresist from the substrate using a stripping solution comprising ozone in a solvent, wherein the solvent comprises acetic anhydride. In some embodiments, a method of stripping a photoresist from a wafer in a wafer bump formation process includes forming a plurality of wafer bumps on a wafer through a patterned photoresist layer; and stripping the photoresist layer using a stripping solution comprising ozone in a solvent, wherein the solvent comprises acetic anhydride. | 04-30-2009 |
20090117500 | PHOTORESIST STRIP WITH OZONATED ACETIC ACID SOLUTION - A solution, apparatus, and method for stripping photoresist from a workpiece are disclosed. Embodiments of the invention describe a solution comprising diluted liquid acetic acid and dissolved gaseous ozone. In an embodiment an ozonated liquid acetic acid solution is prepared by dissolving ozone in liquid DI water and then mixing with liquid acetic acid. In another embodiment an ozonated liquid acetic acid solution is prepared by mixing liquid DI water and liquid acetic acid and then dissolving ozone. The ozonated liquid acetic acid solution is used to strip a layer of photoresist from a workpiece with improved performance. | 05-07-2009 |
20090199768 | MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION - A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. | 08-13-2009 |
20090201722 | METHOD INCLUDING MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION FOR MRAM FABRICATION - A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices. | 08-13-2009 |
20090205677 | METHOD AND APPARATUS FOR WAFER CLEANING - A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge. | 08-20-2009 |
20100096256 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100098873 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100101829 | MAGNETIC NANOWIRES FOR TCO REPLACEMENT - This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanowires in a plane, the nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the nanowires in the plane of the layer, the nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanowires allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanowires are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanowires on the substrate and applying a magnetic field to form the nanowires into a plurality of conductive pathways parallel to the surface of the substrate. | 04-29-2010 |
20100101830 | MAGNETIC NANOPARTICLES FOR TCO REPLACEMENT - This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanoparticles in a plane, the nanoparticles being aligned in strings, the strings being roughly parallel to each other and configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanoparticles allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanoparticles are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanoparticles on the substrate and applying a magnetic field to form the nanoparticles into a plurality of conductive pathways parallel to the surface of the substrate. | 04-29-2010 |
20100101832 | COMPOUND MAGNETIC NANOWIRES FOR TCO REPLACEMENT - This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of compound magnetic nanowires in a plane, the compound nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the compound nanowires in the plane of the layer, the compound nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of compound magnetic nanowires allows for substantial optical transparency of the conductive layer. A compound magnetic nanowire may comprise a silver nanowire covered by a layer of magnetic metal such as nickel or cobalt. Furthermore, a compound magnetic nanowire may comprise a carbon nanotubes (CNT) attached to a magnetic metal nanowire. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of compound magnetic conductive nanowires on the substrate and applying a magnetic field to form the compound nanowires into a plurality of conductive pathways parallel to the surface of the substrate. | 04-29-2010 |
20100221583 | HDD PATTERN IMPLANT SYSTEM - Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy. | 09-02-2010 |
20100221606 | ENERGY STORAGE DEVICE WITH POROUS ELECTRODE - A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor. | 09-02-2010 |
20100261049 | high power, high energy and large area energy storage devices - A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells. | 10-14-2010 |
20100311204 | METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE - Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate. | 12-09-2010 |
20100311228 | METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE - Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate. | 12-09-2010 |
20110006034 | METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES - A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently. | 01-13-2011 |
20110011828 | ORGANICALLY MODIFIED ETCH CHEMISTRY FOR ZNO TCO TEXTURING - Embodiments disclosed herein generally relate to a process of texturing a transparent conductive oxide layer deposited over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. After the transparent conductive oxide layer is deposited, the layer is textured to increase the haze of the layer. An increase in haze permits the layer to increase light trapping and thus improve the efficiency of a solar cell. A wet etch chemistry that utilizes a component that is less polar than water permits the acidic component, such as nitric acid, to dissociate less and thus etch the transparent conductive oxide to the desired texture. A suitable component is an organic component such as acetic acid which has a dielectric constant substantially below the dielectric constant of water. | 01-20-2011 |
20110051322 | POROUS AMORPHOUS SILICON-CARBON NANOTUBE COMPOSITE BASED ELECTRODES FOR BATTERY APPLICATIONS - Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer. | 03-03-2011 |
20110101247 | TEMPERATURE CONTROL OF A SUBSTRATE DURING A PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS - Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius. | 05-05-2011 |
20110104393 | PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS - Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state. | 05-05-2011 |
20110143170 | METHODS FOR SUBSTRATE SURFACE PLANARIZATION DURING MAGNETIC PATTERNING BY PLASMA IMMERSION ION IMPLANTATION - A method and apparatus for planarizing magnetically susceptible layers of substrates is provided. A patterned resist is formed on the magnetically susceptible layer, and the substrate is subjected to a plasma immersion ion implantation process to change a magnetic property of the magnetically susceptible layer according to the pattern of the resist material. The substrate is subjected to a plasma material removal process either before or after the implantation process to planarize the surface of the magnetically susceptible layer resulting from the implantation process. The plasma material removal process may be directional or non-directional. | 06-16-2011 |
20110163065 | SYSTEM FOR BATCH PROCESSING OF MAGNETIC MEDIA - A method and apparatus for processing multiple substrates simultaneously is provided. Each substrate may have two major active surfaces to be processed. The apparatus has a substrate handling module and a substrate processing module. The substrate handling module has a loader assembly, a flipper assembly, and a factory interface. Substrates are disposed on a substrate carrier at the loader assembly. The flipper assembly is used to flip all the substrates on a substrate carrier in the event two-sided processing is required. The factory interface positions substrate carriers holding substrates for entry into and exit from the substrate processing module. The substrate processing module comprises a load-lock, a transfer chamber, and a plurality of processing chambers, each configured to process multiple substrates disposed on a substrate carrier. | 07-07-2011 |
20110180133 | Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires - This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanostructures in a plane, aligned into a plurality of roughly parallel continuous conductive pathways, wherein the density of the magnetic nanostructures allows for substantial optical transparency of the conductive layer. The magnetic nanostructures may be nanoparticles, nanowires or compound nanowires. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic nanostructures on the substrate and applying a magnetic field to form the nanostructures into a plurality of conductive pathways parallel to the surface of the substrate. The conductive layer may be used to provide an enhanced silicon to transparent conductive oxide (TCO) interface in thin film silicon solar cells. | 07-28-2011 |
20120012172 | THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK - Methods of depositing a TCO layer on a substrate and precursor for solar cells are described. A method of depositing a TCO layer | 01-19-2012 |
20120055534 | Photovoltaic Devices with High Work-Function TCO Buffer Layers and Methods of Manufacture - Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules. | 03-08-2012 |
20120055535 | Photovoltaic Devices With Textured Glass Superstrate - Embodiments of the invention are directed to photovoltaic cells comprising a textured superstrate, a front contact layer, a photoabsorber layer and a back contact layer. The textured superstrate has a plurality of craters with an average opening angle, an average aspect ratio and an average depth. Methods of making such photovoltaic cells and photovoltaic modules are also described. | 03-08-2012 |
20120164470 | SILVER-NICKEL CORE-SHEATH NANOSTRUCTURES AND METHODS TO FABRICATE - Embodiments of the invention generally provide core-sheath nanostructures and methods for forming such nanostructures. In one embodiment, a method for forming core-sheath nanostructures includes stirring an aqueous dispersion containing silver nanostructures while adding a catalytic metal salt solution to the aqueous dispersion and forming catalytic metal coated silver nanostructures during a galvanic replacement process. The method further includes stirring an organic solvent dispersion containing the catalytic metal coated silver nanostructures dispersed in an organic solvent while adding a nickel salt solution to the organic solvent dispersion, and thereafter, adding a reducing solution to the organic solvent dispersion to form silver-nickel core-sheath nanostructures during a nickel coating process. In one embodiment, the core-sheath nanostructures are silver-nickel core-sheath nanowires, wherein each silver-nickel core-sheath nanowire has a sheath layer of nickel disposed over and encompassing a catalytic metal layer of palladium disposed on a nanowire core of silver. | 06-28-2012 |
20120196155 | RESIST FORTIFICATION FOR MAGNETIC MEDIA PATTERNING - A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged. | 08-02-2012 |
20120202357 | In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia. | 08-09-2012 |
20130081301 | Stiction-free drying of high aspect ratio devices - A method of removing a water-comprising rinse/cleaning material from the surface of a device which includes high aspect ratio features (an aspect ratio of 5 or greater) where sidewalls of the feature are separated by 50 nm or less without causing stiction between the feature sidewall surfaces. The method relies on the use of a low surface tension drying liquid which also exhibits a high evaporation rate. The method also relies on a technique by which the drying liquid is applied. Increasing the evaporation rate of the drying liquid and application of the drying liquid in the form of a vapor helps to eliminate stiction. | 04-04-2013 |
20130089987 | Method of barc removal in semiconductor device manufacturing - A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO | 04-11-2013 |
20130095252 | METHOD AND APPARATUS FOR ALIGNING NANOWIRES DEPOSITED BY AN ELECTROSPINNING PROCESS - Embodiments of the invention generally include apparatus and methods for depositing nanowires in a predetermined pattern during an electrospinning process. An apparatus includes a nozzle for containing and ejecting a deposition material, and a voltage source coupled to the nozzle to eject the deposition material. One or more electric field shaping devices are positioned to shape the electric field adjacent to a substrate to control the trajectory of the ejected deposition material. The electric field shaping device converges an electric field at a point near the surface of the substrate to accurately deposit the deposition material on the substrate in a predetermined pattern. The methods include applying a voltage to a nozzle to eject an electrically-charged deposition material towards a substrate, and shaping one or more electric fields to control the trajectory of the electrically-charged deposition material. The deposition material is then deposited on the substrate in a predetermined pattern. | 04-18-2013 |
20130102110 | METHOD AND APPARATUS OF FORMING A CONDUCTIVE LAYER - The present invention generally includes an apparatus and process of forming a conductive layer on a surface of a host substrate, which can be directly used to form a portion of an electronic device. More specifically, one or more of the embodiments disclosed herein include a process of forming a conductive layer on a surface of a substrate using an electrospinning type deposition process. Embodiments of the conductive layer forming process described herein can be used to reduce the number of processing steps required to form the conductive layer, improve the electrical properties of the formed conductive layer and reduce the conductive layer formation process complexity over current state-of-the-art conductive layer formation techniques. Typical electronic device formation processes that can benefit from one or more of the embodiments described herein include, but are not limited to processes used to form solar cells, electronic visual display devices and touchscreen type technologies. | 04-25-2013 |
20130130405 | APPARATUS AND METHODS FOR SILICON OXIDE CVD RESIST PLANARIZATION - Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation. | 05-23-2013 |
20130221595 | SUBSTRATE CARRIER PLATE - A method and apparatus for processing multiple substrates simultaneously is provided. In one embodiment, a carrier plate for supporting a plurality of substrates is provided. The carrier plate comprises a disk-shaped body having a first side and a substantially planar second side opposite the first side, and a plurality of depressions formed in the first side of the disk-shaped body. Each of the plurality of depressions comprise a sidewall tapering from a surface of the first side and a bottom surface of the depression, and a support structure disposed above the bottom surface of, and geometrically centered in, the depression. | 08-29-2013 |
20130302595 | SUPER-HYDROPHOBIC AND OLEOPHOBIC TRANSPARENT COATINGS FOR DISPLAYS - Embodiments described herein generally relate to methods of creating super-hydrophobic and super-oleophobic layers and the resulting composition of matter. A method for creating a super-hydrophobic and super-oleophobic surface can include positioning a substrate with an exposed surface in a processing chamber, injecting an electrically charged silicon-containing deposition material towards the surface of the substrate, depositing silicon-containing nanofibers onto the exposed surface of the substrate, and depositing a thin low surface energy layer over the exposed surface of the substrate and the silicon-containing nanofibers. A substrate with a super-hydrophobic and super-oleophobic surface can include a substrate with an exposed surface, one or more layers of nanofibers disposed on the exposed surface, and a thin low surface energy material deposited over both the nanofibers and the exposed surface. | 11-14-2013 |
20140017518 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 01-16-2014 |
20140072876 | POROUS AMORPHOUS SILICON-CARBON NANOTUBE COMPOSITE BASED ELECTRODES FOR BATTERY APPLICATIONS - Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer. | 03-13-2014 |
20140083363 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 03-27-2014 |
20140131308 | PATTERN FORTIFICATION FOR HDD BIT PATTERNED MEDIA PATTERN TRANSFER - A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials. | 05-15-2014 |
20140144462 | STICTION-FREE DRYING PROCESS WITH CONTAMINANT REMOVAL FOR HIGH-ASPECT RATIO SEMICONDUCTOR DEVICE STRUCTURES - Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate. | 05-29-2014 |
20140147700 | RESIST FORTIFICATION FOR MAGNETIC MEDIA PATTERNING - A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged. | 05-29-2014 |
20140178728 | ENERGY STORAGE DEVICE WITH POROUS ELECTRODE - A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor. | 06-26-2014 |
20140231384 | HDD PATTERNING USING FLOWABLE CVD FILM - Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate. | 08-21-2014 |
20140264354 | BUFFER LAYERS FOR METAL OXIDE SEMICONDUCTORS FOR TFT - The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level. | 09-18-2014 |