Patent application number | Description | Published |
20090081871 | POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE - The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound. | 03-26-2009 |
20090081927 | POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE - The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound. | 03-26-2009 |
20090126713 | Slurry composition containing non-ionic polymer and method for use - A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (M | 05-21-2009 |
20090293369 | WIRE SAW SLURRY RECYCLING PROCESS - The present invention provides a method of recycling a water-based wire saw cutting slurry waste fluid comprising abrasive particles and waste solids in a water-based carrier. The method comprises the steps of (a) separating the waste fluid into a first fraction and a second fraction, the first fraction comprising recovered abrasive particles, and the second fraction comprising waste solids and a portion of the water-based carrier; (b) optionally, separating the second fraction to separate the waste solids from the water-based carrier to form a waste solids portion and a recovered water-based carrier portion; (c) optionally, drying the first fraction from step (a) and separating the resulting dried abrasive particles from smaller waste particles to produce a purified recovered abrasive fraction; and (d) suspending particles of the first fraction from step (a), the purified recovered abrasive fraction from step (c), or both, in a suspending medium comprising at least a portion of the recovered water-based carrier from step (b), to generate a recycled water-based wire saw cutting slurry. | 12-03-2009 |
20100075502 | Barrier slurry for low-k dielectrics - The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. | 03-25-2010 |
20100276392 | CMP SYSTEM UTILIZING HALOGEN ADDUCT - The invention provides a method of polishing a substrate comprising (i) providing a chemical-mechanical polishing system comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.001 mM or more in the aqueous carrier, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate. | 11-04-2010 |
20100314576 | COMPOSITIONS FOR CMP OF SEMICONDUCTOR MATERIALS - The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents. | 12-16-2010 |
20110239836 | COMPOSITION FOR IMPROVING DRYNESS DURING WIRE SAWING - The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition. | 10-06-2011 |
20110240001 | WIRESAW APPARATUS AND METHOD FOR CONTINUOUS REMOVAL OF MAGNETIC IMPURITIES DURING WIRESAW CUTTING - The invention provides a method and apparatus for removing magnetic or magnetized contaminants from a wiresaw cutting slurry during a wiresaw cutting process. The apparatus comprises a recirculating slurry dispensing system that defines the slurry flow pathway. The recirculating dispensing slurry system comprises a magnetic separator for removing magnetic or magnetizable contaminants from the slurry, wherein the purified slurry is discharged back into recirculation within the recirculating slurry dispensing system. | 10-06-2011 |
20110240002 | CUTTING FLUID COMPOSITION FOR WIRESAWING - The present invention provides an aqueous wiresaw cutting fluid composition that reduces the amount of hydrogen produced during a wiresaw cutting process. The composition is comprised of an aqueous carrier, a particulate abrasive, a thickening agent, and a hydrogen suppression agent. | 10-06-2011 |
20110303210 | WIRESAW CUTTING METHOD - The present invention provides a wiresaw cutting method comprising cutting a workpiece with a wiresaw while applying an aqueous cutting fluid to the wiresaw from a recirculating reservoir of cutting fluid, monitoring at least one of a chemical property, a physical property, or both, and adjusting the chemical composition of the cutting fluid while cutting the workpiece to maintain the property being monitored. The present invention additionally provides an apparatus to perform the inventive method. | 12-15-2011 |
20120006312 | SELF-CLEANING WIRESAW APPARATUS AND METHOD - The present invention provides a self-cleaning wiresaw cutting apparatus including a cleaning mechanism adapted to clean the components of the wiresaw before, during, or after a cutting process or to humidify the cutting region of the apparatus. The apparatus contains at least one dispenser adapted to dispense an aqueous fluid onto various components of the wiresaw. | 01-12-2012 |
20130072021 | COMPOSITION AND METHOD FOR POLISHING ALUMINUM SEMICONDUCTOR SUBSTRATES - The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyldiphenyloxide disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions. | 03-21-2013 |
20140103250 | COMPOSITION AND METHOD FOR POLISHING ALUMINUM SEMICONDUCTOR SUBSTRATES - The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyls disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions. | 04-17-2014 |
20140209566 | CHEMICAL-MECHANICAL POLISHING COMPOSITION CONTAINING ZIRCONIA AND METAL OXIDIZER - The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co | 07-31-2014 |
20140263184 | CMP COMPOSITIONS WITH LOW SOLIDS CONTENT AND METHODS RELATED THERETO - Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments. | 09-18-2014 |