| Patent application number | Description | Published |
|---|
| 20080251862 | ACCUMULATION FIELD EFFECT MICROELECTRONIC DEVICE AND PROCESS FOR THE FORMATION THEREOF - A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance. | 10-16-2008 |
| 20080286880 | Methods and Systems for Nanoparticle Enhancement of Signals - Methods and systems for utilizing metal nanoparticles to enhance optical (UV, visible, and IR, as appropriate) signals from a reporting entity are presented. The methods and systems of this invention do not require the nanoparticles to be attached or adhered to a surface, assembled in a matrix or coated with a spacer coating. | 11-20-2008 |
| 20110023955 | LATERAL COLLECTION PHOTOVOLTAICS - Lateral collection photovoltaic (LCP) structures based on micro- and nano-collecting elements are used to collect photogenerated carriers. In one set of embodiments, the collecting elements are arrayed on a conducting substrate. In certain versions, the collecting elements are substantially perpendicular to the conductor. In another set of embodiments, the micro- or nano-scale collecting elements do not have direct physical and electrical contact to any conducting substrate. In one version, both anode and cathode electrodes are laterally arrayed. In another version, the collecting elements of one electrode are a composite wherein a conductor is separated by an insulator, which is part of each collector element, from the opposing electrode residing on the substrate. In still another version, the collection of one electrode structure is a composite containing both the anode and the cathode collecting elements for collection. An active material is positioned among the collector elements. | 02-03-2011 |
| 20130092210 | LIGHT AND CARRIER COLLECTION MANAGEMENT PHOTOVOLTAIC STRUCTURES - A photovoltaic device is provided that includes a periodic array having a unit cell with a first electrode protrusion of a height H, characteristic width W, and period L. An absorber of nominal thickness T has a volume with a first component between the electrode element protrusions and a second component completely covering the electrode protrusions, H, W, and L for a given T allow carrier collection from the majority of points within the volume and simultaneously to enhance the photon density distribution within the absorber resulting from path length, photonic and plasmonic effects produced by the topology and morphology created by the electrode shapes and the volume distribution between the first and the second components. | 04-18-2013 |
| 20130099342 | LATERAL COLLECTION PHOTOVOLTAICS - A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode. | 04-25-2013 |
| 20130192663 | SINGLE AND MULTI-JUNCTION LIGHT AND CARRIER COLLECTION MANAGEMENT CELLS - A material design is provided for a light and carrier collection (LCCM) architecture in single junction and multi-junction photovoltaic and light sensor devices. The LCCM architecture improves performance and, when applied to single or multi-junctions, can lead to solar cells on flexible plastic substrates which can be easily deployed and even draped over various shapes and forms. The device has an array of conducting nano-elements in electrical and physical contact with the planar electrode. A spacer of 0 to 100 nm in thickness may be used to contact the array of conducting nano-elements. One or more volume regions comprised of at least one light absorbing material is present with the first in simultaneous contact with said spacer to form an operating photovoltaic single- or multi-junction device with periodic undulations to enhance trapping of the impinging light and photocarrier collection throughout the absorber volume regions. | 08-01-2013 |
| 20130285149 | ACCUMULATION FIELD EFFECT MICROELECTRONIC DEVICE AND PROCESS FOR THE FORMATION THEREOF - A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance. | 10-31-2013 |
| 20140242744 | SUBSTRATE AND SUPERSTRATE DESIGN AND PROCESS FOR NANO-IMPRINTING LITHOGRAPHY OF LIGHT AND CARRIER COLLECTION MANAGEMENT DEVICES - A process for forming a nano-element structure is provided that includes contacting a template with a material to form the nano-element structure having an array of nano-elements and a base physically connecting the array of nano-elements. The material that is contacted with the template is the nano-element structure material or precursor material from which the array of nano-elements is formed. The nano-element structure is then removed from contact with the template. The nano-element structure material or its precursor is brought into contact with the template for the forming of the array of nano-elements by techniques such as nano-imprinting and printing. A final substrate subsequently supports the array of nano-elements so produced. The array of nano-elements is exposed free and at least one layer of a dopant layer, a spacer layer, a light absorber layer, a conductor, or a counter electrode layer, are employed to complete an operative device. | 08-28-2014 |
| 20140299184 | SEMICONDUCTOR DOME-ARRAY STRUCTURES USING NON-PERMANENT AND PERMANENT MOLD TEMPLATES - A photo-active device is provided that has a cavity in an integrated, transparent mold material. An active material layer is disposed therein along with other layers disposed in and about said cavity to define a dome-like array architecture. A process for forming the dome-like array structure includes disposing an active layer into a series of empty periodically positioned cavities of a dome-like array template working mold material. Each of the series of empty periodically positioned cavities has curvature variations of the interior surface of the dome-array cavities optimized for device efficiency, reduction of performance sensitivity to light impingement angle, or a combination thereof. At least one of absorber layers, contact layers, spacer/transport layers, and electrode layers are also disposed in the series of cavities. | 10-09-2014 |
