Patent application number | Description | Published |
20120214005 | METHOD FOR PRODUCING HYDRIDOSILANES - The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula Si | 08-23-2012 |
20120273805 | METHOD FOR PRODUCING SILICON LAYERS - The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula Si | 11-01-2012 |
20120291665 | METHOD FOR OLIGOMERIZING HYDRIDOSILANES, THE OLIGOMERS THAT CAN BE PRODUCED BY MEANS OF THE METHOD, AND THE USE THEREOF - The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof. | 11-22-2012 |
20130168824 | P-DOPED SILICON LAYERS - The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer. | 07-04-2013 |
20130183223 | METHOD FOR PRODUCING HIGHER HYDRIDOSILANE COMPOUNDS - The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use. | 07-18-2013 |
20130240892 | METHOD FOR CONVERTING SEMICONDUCTOR LAYERS - The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle ( | 09-19-2013 |
20130259790 | PROCESS FOR PREPARING HIGHER HALOSILANES AND HYDRIDOSILANES - The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers. | 10-03-2013 |
20130259791 | PROCESS FOR PREPARING HYDRIDOSILANES - The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula Si | 10-03-2013 |
20130328175 | METHOD FOR THE HYDROGEN PASSIVATION OF SEMICONDUCTOR LAYERS - The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof. | 12-12-2013 |