Patent application number | Description | Published |
20080248230 | Polymer Emi Housing Comprising Conductive Fibre - An electromagnetic shielding housing is presented that is made up out of one or more shells. The shells comprise polymer and conductive fibres and have a polymer rich surface that covers the fibres except for predefined areas where the fibres are substantially uncovered. The conductive fibres can be metal-coated non-metallic fibres or plain metallic fibres, preferably plain stainless steel fibres. A method for uncovering the fibres is also presented which comprises the breaking-off of selected protrusions or the breaking of the shell at selected recesses so as to uncover the fibres. The housing and the method solve the problem that the polymer skin leads to inferior shielding at the joint of the shells. | 10-09-2008 |
20100129682 | METHOD TO PROVIDE COIL SHAVED METAL FIBERS - A method for providing coil shaved metal fibers according to the present invention comprises the steps of -providing a metal composite foil, the metal composite foil comprising oat least two metal layers (Lx) for being converted into metal fibers, each pair of adjacent metal layers are mutually separated by a sacrificial layer (Sy) provided from a sacrificial metal, each sacrificial layer (Sy) having a first and second surface, whereby for each sacrificial layer, the first surface contacts one of the pair of adjacent metal layers, the second surface is contacting the other of the pair of adjacent metal layers; -coiling said metal composite foil on a shaft thereby providing a metal coil having one free end surface; -rotating the metal coil and cutting the free end surface of the metal coil by means of a cutting tool, thereby providing a bundle of composite fibers; -removing the sacrificial metal of the sacrificial layers from the composite fibers thereby providing a bundle of metal fibers, each metal fiber being obtained from one of the metal layers (Lx). | 05-27-2010 |
20110225945 | MULTILAYER METAL FIBER YARN - A new metal fiber yarn ( | 09-22-2011 |
20110225946 | MULTIBUNDLE METAL FIBER YARN - A new metal fiber yarn is provided. The metal fiber yarn ( | 09-22-2011 |
Patent application number | Description | Published |
20130153923 | ENHANCEMENT MODE III-NITRIDE DEVICE AND METHOD FOR MANUFACTURING THEREOF - Enhancement mode III-nitride HEMT and method for manufacturing an enhancement mode III-nitride HEMT are disclosed. In one aspect, the method includes providing a substrate having a stack of layers on the substrate, each layer including a III-nitride material, and a passivation layer having high temperature silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the HT silicon nitride is formed by MOCVD or LPCVD or any equivalent technique at a temperature higher than about 450° C. The method also includes forming a recessed gate region by removing the passivation layer only in the gate region, thereby exposing the underlying upper layer. The method also includes forming a p-doped GaN layer at least in the recessed gate region, thereby filling at least partially the recessed gate region, and forming a gate contact and source/drain contacts. | 06-20-2013 |
20140103357 | SCHOTTKY DIODE STRUCTURE AND METHOD OF FABRICATION - The disclosed technology relates to a device including a diode. In one aspect, the device includes a lower group III metal nitride layer and an upper group III metal nitride layer and a heterojunction formed therebetween, where the heterojunction extends horizontally and is configured to form a two-dimensional electron gas (2DEG) that is substantially confined in a vertical direction and within the lower group III metal nitride layer. The device additionally includes a cathode forming an ohmic contact with the upper group III metal nitride layer. The device additionally includes an anode, which includes a first portion that forms a Schottky barrier contact with the upper group III metal nitride layer, and a second portion that is separated vertically from the upper group III metal nitride layer by a layer of dielectric material. The anode is configured such that the second portion is horizontally located between the anode and the cathode and the dielectric material is configured to pinch off the 2DEG layer in a reverse biased configuration of the device. The device further includes a passivation area formed between the anode and the cathode to horizontally separate the anode and the cathode from each other. | 04-17-2014 |
20140159118 | III-Nitride Transistor with Source-Connected Heat Spreading Plate - Disclosed are semiconductor devices and methods for manufacturing them. An example device may include a III-nitride stack having a front side surface and a back side surface. The III-nitride stack may be formed of at least a first layer and a second layer, between which a heterojunction may be formed, such that a two-dimensional electron gas layer is formed in the second layer. A source electrode, a drain electrode, and a gate electrode positioned between the source and drain electrodes may be formed on the front side surface, and an insulation layer may be formed over the electrodes on the front side surface. A carrier substrate may be attached to the insulation layer. An electrically conductive back plate may be formed on the back side surface. The back plate may directly face the source electrode and the gate electrode, but not the drain electrode. | 06-12-2014 |
20140306235 | Method for Producing a Semiconductor Device Comprising a Schottky Diode and a High Electron Mobility Transistor - A semiconductor device includes a Schottky diode and a High Electron Mobility Transistor (HEMT) formed on a III-nitride stack. The III-nitride stack includes at least a lower and an upper III-nitride layer forming a heterojunction therebetween, so that a 2-dimensional electron gas (2DEG) layer may be formed in the lower layer. The 2DEG layer serves as a charge carrier for the diode and the HEMT. A doped III-nitride layer may be present between a portion of the anode of the diode and the III-nitride stack, and the portion may be located between the diode's Schottky junction and the cathode. A further layer of doped III-nitride material may be present between the gate electrode of the HEMT and the III-nitride stack. The thickness of the III-nitride layers is not equal, so that the turn-on voltage of the diode and the threshold voltage of the HEMT may be tuned according to specific requirements. The disclosure also involves a method of producing such a semiconductor device. | 10-16-2014 |
20140346568 | Low Temperature Ohmic Contacts for III-N Power Devices - The disclosure relates to a method for manufacturing an Au-free ohmic contact for an III-nitride (III-N) device on a semiconductor substrate and to a III-N device obtainable therefrom. The III-N device includes a buffer layer, a channel layer, a barrier layer, and a passivation layer. A 2DEG layer is formed at an interface between the channel layer and the barrier layer. The method includes forming a recess in the passivation layer and in the barrier layer up to the 2DEG layer, and forming an Au-free metal stack in the recess. The metal stack comprises a Ti/Al bi-layer, with a Ti layer overlying and in contact with a bottom of the recess, and a Al layer overlying and in contact with the Ti layer. A thickness ratio of the Ti layer to the Al layer is between 0.01 to 0.1. After forming the metal stack, a rapid thermal anneal is performed. Optionally, prior to forming the Ti/Al bi-layer, a silicon layer may be formed in contact with the recess. | 11-27-2014 |
20150214327 | Method for Producing a Semiconductor Device Comprising a Schottky Diode and a High Electron Mobility Transistor - A semiconductor device includes a Schottky diode and a High Electron Mobility Transistor (HEMT) formed on a III-nitride stack. The III-nitride stack includes at least a lower and an upper III-nitride layer forming a heterojunction therebetween, so that a 2-dimensional electron gas (2DEG) layer may be formed in the lower layer. The 2DEG layer serves as a charge carrier for the diode and the HEMT. A doped III-nitride layer may be present between a portion of the anode of the diode and the III-nitride stack, and the portion may be located between the diode's Schottky junction and the cathode. A further layer of doped III-nitride material may be present between the gate electrode of the HEMT and the III-nitride stack. The thickness of the III-nitride layers is not equal, so that the turn-on voltage of the diode and the threshold voltage of the HEMT may be tuned according to specific requirements. The disclosure also involves a method of producing such a semiconductor device. | 07-30-2015 |
20150318374 | ENHANCEMENT MODE III-NITRIDE DEVICE AND METHOD FOR MANUFACTURING THEREOF - Enhancement mode III-nitride HEMT and method for manufacturing an enhancement mode III-nitride HEMT are disclosed. In one aspect, the method includes providing a substrate having a stack of layers on the substrate, each layer including a III-nitride material, and a passivation layer having high temperature silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the HT silicon nitride is formed by MOCVD or LPCVD or any equivalent technique at a temperature higher than about 450° C. The method also includes forming a recessed gate region by removing the passivation layer only in the gate region, thereby exposing the underlying upper layer. The method also includes forming a p-doped GaN layer at least in the recessed gate region, thereby filling at least partially the recessed gate region, and forming a gate contact and source/drain contacts. | 11-05-2015 |
Patent application number | Description | Published |
20140212417 | PROLONGED INHIBITION OF INTERLEUKIN-6 MEDIATED SIGNALING - Polypeptides are provided directed against IL-6R at specific dose ranges and dosing schedules that result in a prolonged effect on IL-6 mediated signaling. In particular, the invention provides pharmacologically active agents, compositions, methods and/or dosing schedules that have certain advantages compared to the agents, compositions, methods and/or dosing schedules that are currently used and/or known in the art, including the ability to dose less frequently or to administer lower doses to obtain equivalent effects in inhibiting IL-6 mediated signaling. | 07-31-2014 |
20150050268 | PROLONGED INHIBITION OF INTERLEUKIN-6 MEDIATED SIGNALING - Polypeptides are provided directed against IL-6R at specific dose ranges and dosing schedules that result in a prolonged effect on IL-6 mediated signaling. In particular, the invention provides pharmacologically active agents, compositions, methods and/or dosing schedules that have certain advantages compared to the agents, compositions, methods and/or dosing schedules that are currently used and/or known in the art, including the ability to dose less frequently or to administer lower doses to obtain equivalent effects in inhibiting IL-6 mediated signaling. | 02-19-2015 |
Patent application number | Description | Published |
20100272492 | Cassette for Use in a Label Printer - A label printer cassette including a supply of print medium a housing configured to house said print medium. The housing has first and second surfaces and a least one side extending between said first and second surface. A cover is provided on one of the sides movable along the length of that one side between a first position in which the print medium is exposed for printing and a second position in which the print medium is protected. | 10-28-2010 |
20120057917 | CASSETTE FOR USE IN A LABEL PRINTER - A label printer cassette is provided. Said label printer cassette comprises at least one supply of printing medium and a housing. The housing comprises a first surface, a second surface, said second surface being opposite said first surface, and at least one side extending between said first and second surfaces, one side having a switch operating arrangement having a ramped surface which is configured, in use to operate a switch of a label printer. | 03-08-2012 |
20130342623 | LABEL PRINTING APPARATUS - A method of creating a label to be printed on a label printing apparatus comprising: determining at least one option to be made available to a user relating to a label-creating process; displaying said at least one option on a display; and enabling a user to select said at least one option; wherein said determination of the at least one option to be made available to the user is based upon at least one parameter. | 12-26-2013 |
20130342856 | LABEL PRINTING APPARATUS - A method of creating a label to be printed on a label printing apparatus comprising: determining at least one option to be made available to a user relating to a label-creating process; displaying said at least one option on a display; and enabling a user to select said at least one option; wherein said determination of the at least one option to be made available to the user is based upon at least one parameter. | 12-26-2013 |
20160031253 | CASSETTE FOR USE IN A LABEL PRINTER - A label printer cassette is provided. The label printer cassette includes at least one supply of printing medium and a housing. The housing has a first surface, a second surface, the second surface being opposite the first surface, and at least one side extending between said first and second surfaces, one side having a switch operating arrangement having a ramped surface which is configured, in use to operate a switch of a label printer. | 02-04-2016 |
Patent application number | Description | Published |
20090054410 | THIADIAZOLE DERIVATIVES FOR THE TREATMENT OF NEURODEGENERATIVE DISEASES - This invention provides specifically substituted 1,2,4-thiadiazole derivatives for use in the treatment of an α-synucleopathy such as Parkinson's disease, diffuse Lewy body disease, traumatic brain injury, amyotrophic lateral sclerosis, Niemann-Pick disease, Hallervorden-Spatz syndrome, Down syndrome, neuroaxonal dystrophy, multiple system atrophy and Alzheimer's disease. This invention also provides various methods for producing such substituted 1,2,4-thiadiazole derivatives. | 02-26-2009 |
20090186354 | METHODS AND TOOLS FOR THE SCREENING OF FACTORS AFFECTING PROTEIN MISFOLDING - The present invention relates in general to the fields of chemical, pharmaceutical and genetic screening and to diseases associated with protein misfolding. In particular, it discloses engineered cells and a system based thereon that can be used to screen for substances that affect protein misfolding. The engineered cells of the invention comprise one or more reporter genes under transcriptional control of a promoter that is responsive to protein misfolding. | 07-23-2009 |
20100144709 | THIADIAZOLE DERIVATIVES FOR THE TREATMENT OF NEURO-DEGENERATIVE DISEASES - The invention provides novel 1,2,4-thiadiazole derivatives useful for preventing or treating an α-synucleopathy such as Parkinson's disease, as well as pharmaceutical compositions including them as biologically active ingredients, and methods for manufacturing them. | 06-10-2010 |
20100261707 | THIADIAZOLE DERIVATIVES FOR THE TREATMENT OF NEURODEGENERATIVE DISEASES - This invention provides specifically substituted 1,2,4-thiadiazole derivatives for use in the treatment of an α-synucleopathy such as Parkinson's disease, diffuse Lewy body disease, traumatic brain injury, amyotrophic lateral sclerosis, Niemann-Pick disease, Hallervorden-Spatz syndrome, Down syndrome, neuroaxonal dystrophy, multiple system atrophy and Alzheimer's disease. This invention also provides various methods for producing such substituted 1,2,4-thiadiazole derivatives. | 10-14-2010 |
20140073607 | COMPOUNDS FOR USE IN THE TREATMENT OF FELINE RETROVIRAL INFECTIONS - The present invention relates to compounds and compositions for use in the treatment or prevention of retroviral infections in felines, in particular cats, and to the use of said derivatives for the manufacture of a medicament for the treatment or prevention of feline leukemia virus (FeLV) infections occurring alone or together with feline immunodeficiency virus (FIV) infections in cats. | 03-13-2014 |
20150018427 | COMPOUNDS FOR TREATING PARVOVIRUS INFECTION - The present invention relates to compounds for use in a method for the treatment or prevention of parvovirus infections in humans and warm-blooded animals, including feline panleukopenia virus (FPV) infections in felids, canine parvovirus type 2 (CPV-2) infections in canines, minute virus of mice (MVM) infections in mice and B19 parvovirus infections in humans. | 01-15-2015 |
20150098904 | EYE DROP COMPOSITION - The present invention relates to an eye-drop composition comprising 2-amino-9-[[(1S,2R)-1,2-bis(hydroxymethyl)cyclopropyl]methyl]-1,9-dihydro-6H-Purin-6-one, and the use thereof for the diagnosis and treatment of herpetic eye infections in companion animals. | 04-09-2015 |
20150352118 | EYE DROP COMPOSITION - The present invention relates to an eye-drop composition comprising 2-amino-9-[[(1S,2R)-1,2-bis(hydroxymethyl)cyclopropyl]methyl]-1,9-dihydro-6H-Purin-6-one, and the use thereof for the diagnosis and treatment of herpetic eye infections in companion animals. | 12-10-2015 |