Patent application number | Description | Published |
20090146162 | FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes. | 06-11-2009 |
20090246944 | METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION - Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible. | 10-01-2009 |
20110057198 | TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING - A delta (δ)-doped (10-10)-plane GaN transistor is disclosed. Delta doping can achieve a transistor having at least 10 times higher current density than a conventional (10-10)-plane GaN transistor. | 03-10-2011 |
20110204329 | NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES - A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 | 08-25-2011 |
20120126239 | LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN III-NITRIDE LAYERS - A III-N layer structure is described that includes a III-N buffer layer on a foreign substrate, an additional III-N layer, a first III-N structure, and a second III-N layer structure. The first III-N structure atop the III-N buffer layer includes at least two III-N layers, each having an aluminum composition, and the III-N layer of the two III-N layers that is closer to the III-N buffer layer having the larger aluminum composition. The second III-N structure includes a III-N superlattice, the III-N superlattice including at least two III-N well layers interleaved with at least two III-N barrier layer. The first III-N structure and the second III-N structure are between the additional III-N layer and the foreign substrate. | 05-24-2012 |
20120193638 | METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION - Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible. | 08-02-2012 |
20120205623 | NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES - A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 | 08-16-2012 |
20130200495 | BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN SUBSTRATES - Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum composition and a second buffer layer formed on the first buffer layer, the second buffer layer having a second aluminum composition. The buffer structure further includes a third buffer layer formed on the second buffer layer at a second interface, the third buffer layer having a third aluminum composition. The first aluminum composition decreases in the first buffer layer towards the interface and the second aluminum composition throughout the second buffer layer is greater than the first aluminum composition at the interface. | 08-08-2013 |
20130264540 | FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES, AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes. | 10-10-2013 |
20130307027 | METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGE NITROGEN POLAR HIGH ELECTRON MOBILITY TRANSISTORS - A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In, Al, Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance. | 11-21-2013 |
20140264370 | CARBON DOPING SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×10 | 09-18-2014 |
20140264455 | CARBON DOPING SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×10 | 09-18-2014 |
20150021552 | III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER - A transistor includes a III-N layer structure comprising a III-N channel layer between a III-N barrier layer and a p-type III-N layer. The transistor further includes a source, a drain, and a gate between the source and the drain, the gate being over the III-N layer structure. The p-type III-N layer includes a first portion that is at least partially in a device access region between the gate and the drain, and the first portion of the p-type III-N layer is electrically connected to the source and electrically isolated from the drain. When the transistor is biased in the off state, the p-type layer can cause channel charge in the device access region to deplete as the drain voltage increases, thereby leading to higher breakdown voltages. | 01-22-2015 |