Patent application number | Description | Published |
20110313114 | POLYSILOXANE-MODIFIED POLYLACTIC ACID COMPOSITION, COMPOSITION UTILIZING SAME, MOLDED ARTICLE, AND PRODUCTION METHOD - Disclosed are a polysiloxane-modified polylactic acid resin, composition using same, molded article, and production method, whereby it is possible to produce a molded article via a simple method, and where said article may be used in applications demanding a high level of impact resistance as an alternative to ABS resin or the like, has a similar level of impact resistance as said substances, has superior flexibility with respect to rupture bending strain and tensile breaking strain, and has bleed resistance. The polysiloxane-modified polylactic acid resin has a segment which is a polylactic acid compound, and a segment which is an amino polysiloxane compound which has an amine group. With respect to the amino poly-siloxane compound, amine groups are on average contained in the range of 0.01 to 2.5% inclusive by mass, and with respect to the polylactic acid compound, are on average contained in the range of 3 to 300 ppm inclusive by mass. | 12-22-2011 |
20140309379 | POLYSILOXANE-MODIFIED POLYLACTIC ACID COMPOSITION, COMPOSITION UTILIZING SAME, MOLDED ARTICLE, AND PRODUCTION METHOD - Disclosed are a polysiloxane-modified polylactic acid resin, composition using same, molded article, and production method, whereby it is possible to produce a molded article via a simple method, and where said article may be used in applications demanding a high level of impact resistance as an alternative to ABS resin or the like, has a similar level of impact resistance as said substances, has superior flexibility with respect to rupture bending strain and tensile breaking strain, and has bleed resistance. The polysiloxane-modified polylactic acid resin has a segment which is a polylactic acid compound, and a segment which is an amino polysiloxane compound which has an amine group. With respect to the amino poly-siloxane compound, amine groups are on average contained in the range of 0.01 to 2.5% inclusive by mass, and with respect to the polylactic acid compound, are on average contained in the range of 3 to 300 ppm inclusive by mass. | 10-16-2014 |
Patent application number | Description | Published |
20120295099 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane. | 11-22-2012 |
20120295100 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane. | 11-22-2012 |
20140212576 | DIELECTRIC THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING DIELECTRIC THIN FILM USING THE SAME - In a thin film capacitor or the like, a dielectric thin film-forming composition capable of improving leakage current characteristics; and a method of forming a dielectric thin film using this composition are provided. Regarding a dielectric thin film-forming composition for forming a dielectric thin film, the dielectric thin film is formed of a barium strontium titanate (BST)-based complex perovskite film, and the composition is doped with aluminum (Al). In addition, a doping amount of the aluminum (Al) is in a range of 0.1 at % to 15 at % with respect to 100 at % of perovskite A site atoms contained in the composition. | 07-31-2014 |
20140284515 | FERRITE THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING FERRITE THIN FILM - This ferrite thin film-forming composition is a composition for forming a thin film of NiZn ferrite, CuZn ferrite, or NiCuZn ferrite using a sol-gel method, and the composition includes: metal raw materials; and a solvent containing N-methyl pyrrolidone, wherein a ratio of an amount of N-methyl pyrrolidone to 100 mass % of the total amount of the composition is in a range of 30 to 60 mass %. | 09-25-2014 |
20140287136 | LaNiO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LaNiO3 THIN FILM USING THE SAME | 09-25-2014 |
20140287251 | PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME - This PZT-based ferroelectric thin film-forming composition comprises: a PZT precursor; a diol; one of polyvinyl pyrrolidones and a polyethylene glycol; water, and a linear monoalcohol having 6 to 12 carbon chains. In this composition, a concentration of the PZT precursor in 100 wt % of the composition is 17 wt % to 35 wt % in terms of oxides, the ratio of the diol to 100 wt % of the composition is 16 wt % to 56 wt %, the ratio of the one of the polyvinyl pyrrolidones and the polyethylene glycol to 1 mol of the PZT precursor is 0.01 mol to 0.25 mol, the ratio of the water to 1 mol of the PZT precursor is 0.5 mol to 3 mol, and the ratio of the linear monoalcohol to 100 wt % of the composition is 0.6 wt % to 10 wt %. | 09-25-2014 |
20140288219 | FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION - This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %. | 09-25-2014 |
20140288233 | METHOD OF PRODUCING FERROELECTRIC THIN FILM-FORMING COMPOSITION AND APPLICATION OF THE SAME - A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days. | 09-25-2014 |
20140293505 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME - A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film. | 10-02-2014 |
20140294720 | LiCoO2 FILM-FORMING PRECURSOR SOLUTION AND METHOD OF FORMING LiCoO2 FILM USING THE SAME | 10-02-2014 |
20140295172 | METHOD OF FORMING PNbZT FERROELECTRIC THIN FILM - A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode | 10-02-2014 |
20140295197 | PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME - In a PZT-based ferroelectric thin film-forming composition, a ratio of a PZT precursor to 100 wt % of the composition is 17 to 35 wt % in terms of oxides, a ratio of a diol to 100 wt % of the composition is 16 to 56 wt %, a ratio of a polyvinyl pyrrolidone or a polyethylene glycol to 1 mol of the PZT precursor is 0.01 to 0.25 mol in terms of monomers, a ratio of the water to 1 mol of the PZT precursor is 0.5 to 3 mol, and the composition does not further contain a linear monoalcohol having 6 to 12 carbon chains which has a ratio of 0.6 to 10 wt % with respect to 100 wt % of the composition. | 10-02-2014 |
20150104637 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane. | 04-16-2015 |
20150187569 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane. | 07-02-2015 |
Patent application number | Description | Published |
20080299312 | Raw Material Solution for Metal Organic Chemical Vapor Deposition Method and Method for Manufacturing Composite Oxide Film Containing Hf-Si Using the Raw Material Solution - There is provided a raw material solution for MOCVD method having a high film forming rate, and a method for manufacturing composite oxide film containing Hf-Si using the raw material solution. There is also provided a method for manufacturing composite oxide film containing Hf-Si by using the raw material solution for MOCVD method providing an excellent adhesivity with a substrate. | 12-04-2008 |
20110177235 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF - Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb | 07-21-2011 |
20130155571 | DIELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM FORMED BY THE METHOD - A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba | 06-20-2013 |
20140349139 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF - Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb | 11-27-2014 |
20140349834 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF - Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb | 11-27-2014 |
Patent application number | Description | Published |
20100190003 | Dielectric thin film, method of manufacturing same, and applications thereof - A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba | 07-29-2010 |
20120001298 | Method for manufacturing thin film capacitor and thin film capacitor obtained by the same - A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0. | 01-05-2012 |
20120055372 | DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD - A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba | 03-08-2012 |
20120100330 | LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME - Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives. | 04-26-2012 |
20120224297 | PROCESS OF FORMING DIELECTRIC THIN FILM AND THIN FILM CAPACITOR HAVING SAID DIELECTRIC THIN FILM - In this process of forming a dielectric thin film, when a dielectric thin film represented by Ba | 09-06-2012 |
20130299943 | METHOD FOR MANUFACTURING THIN FILM CAPACITOR AND THIN FILM CAPACITOR OBTAINED BY THE SAME - A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0. | 11-14-2013 |
20150129547 | LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME - Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives. | 05-14-2015 |
Patent application number | Description | Published |
20130038893 | INFORMATION PROCESSING APPARATUS AND STORAGE MEDIUM - An information processing apparatus includes a request-frequency calculating unit, an acceptable-frequency calculating unit, and acceptance/rejection determining unit. The request-frequency calculating unit calculates a request frequency corresponding to a processing request relating to image formation with reference to any one of multiple pieces of frequency information, which is broken down by process category of an image forming process and stored in a predetermined storage unit, selectively. The acceptable-frequency calculating unit calculates an acceptable frequency corresponding to the processing request from acceptable-processing-amount information stored in a predetermined storage unit. The acceptance/rejection determining unit determines whether or not to accept the processing request by comparing the request frequency with the acceptable frequency. | 02-14-2013 |
20130156457 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - An image forming apparatus includes an engine configured to perform image formation; an engine control unit configured to control the engine; an apparatus control unit configured to control the whole of the apparatus; a storage unit; and a state management unit configured to set the apparatus to a power-saving mode in which the apparatus control unit and the storage unit are supplied with power while the engine, and the engine control unit are not supplied with power when a main power supply is turned on. When the apparatus is set to the power-saving mode, the apparatus control unit reads out second engine information that represents a configuration of the engine from the storage unit and performs a start-up process on the apparatus control unit on the basis of the second engine information. | 06-20-2013 |
20140300921 | IMAGE FORMING APPARATUS AND POWER SUPPLY CONTROL SYSTEM - An image forming apparatus includes a reception part that receives, from a request part connected via a network, a power supply stop request that designates at least one of a plurality of power supply stop modes for stopping power supply in the image forming apparatus; a selection part that selects, when stopping the power supply in the image forming apparatus is not allowed in the designated power supply stop mode, power supply stop modes from the plurality of power supply stop modes in each of which stopping the power supply in the image forming apparatus is allowed; and a notification part that notifies the request part of the power supply stop mode selected by the selection part. | 10-09-2014 |
20150043026 | JOB PROCESSING SYSTEM, JOB PROCESSING METHOD, AND COMPUTER-READABLE MEDIUM - A job processing system, including: a job accepting unit which accepts a job; a job registering unit which registers the job accepted by the job accepting unit; a job processing unit which performs processing of the job registered in the job registering; a stopping command accepting unit which accepts a processing stopping command for the job; and a control unit which performs control in which registering is postponed for the job which is in a process of being registered in the job registering unit when the stopping command accepting unit accepted the processing stopping command. | 02-12-2015 |
20150338898 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND RECORDING MEDIUM - An information processing apparatus includes a processor configured to shift to an energy saving mode in which predetermined functions are inactivated. The processor includes a detection unit that detects a shutdown operation in the energy saving mode of the information processing apparatus, an operation reception unit that displays, when the shutdown operation is detected, a screen in which a user is prompted to determine whether performance of a shutdown process is to be continued, the operation reception unit receiving an operation through the screen, and a shutdown unit that performs the shutdown process when an operation to continue performance of the shutdown process is received through the screen. | 11-26-2015 |
20150358491 | IMAGE PROCESSING APPARATUS, CONTROL METHOD AND RECORDING MEDIUM - An image processing apparatus includes an image processing unit configured to process an image; an input unit configured to input a start-up instruction to the image processing unit; a detection unit configured to detect that a first electric power is supplied in a case where a supply cable is connected to an electrical outlet in a state of separation of the cable from the outlet; a first non-volatile storage unit and a second volatile storage unit configured to store first and second values, respectively, the first and second values indicating whether being in a valid state for receiving the start-up instruction; a determination unit configured to determine whether the first value indicates the valid state and is different from the second value; and a control unit configured to restrict a second electric power supplied to the image processing unit, and to bring the image processing apparatus into the valid state. | 12-10-2015 |
Patent application number | Description | Published |
20090320428 | Air filter medium - The objective of the present invention is to provide an air filter medium having a lower pressure drop and higher efficiency as compared to an air filter medium currently in use. This objective is achieved by providing an air filter medium characterized by comprising glass short fibers as its main fibers in which the constituent fibers are dispersed uniformly and, when the constituting fibers at a diluted concentration of 0.04% by mass are allowed to stand for 12 hours, the sedimentation volume is 450 cm | 12-31-2009 |
20110283671 | AIR FILTER MEDIUM - The objective of the present invention is to provide an air filter medium having a lower pressure drop and higher efficiency as compared to an air filter medium currently in use. This objective is achieved by providing an air filter medium characterized by comprising glass short fibers as its main fibers in which the constituent fibers are dispersed uniformly and, when the constituting fibers at a diluted concentration of 0.04% by mass are allowed to stand for 12 hours, the sedimentation volume is 450 cm | 11-24-2011 |
20130267142 | WET-LAID NONWOVEN FABRIC FOR SEMIPERMEABLE MEMBRANE SUPPORTING BODY, METHOD FOR PRODUCING SAID WET-LAID NONWOVEN FABRIC, AND METHOD FOR IDENTIFYING LOW-DENSITY DEFECT OF WET-LAID NONWOVEN FABRIC - A uniform semipermeable membrane supporting body which does not cause any defect in the semipermeable membrane coating layer when a semipermeable membrane coating liquid is applied, and is free of low density defects. The wet-laid nonwoven fabric for a semipermeable membrane supporting body according to the present disclosure contains a synthetic fiber as a main constituent fiber, has been subjected to hot press processing, has a pressure loss at a face velocity of 5.3 cm/second of from 50 Pa to 3000 Pa and a sheet density of 0.5 g/cm | 10-10-2013 |
20150075406 | POROUS BODY AND PROCESS FOR MANUFACTURING SAME - The object of the present invention is to provide a porous body having fluid permeance, which contains cellulose-based nanofibers having an extremely thin fiber diameter and high hydrophilicity, and to manufacture a porous body at low cost. The porous body according to the present invention is a porous body in which nanofibers are entangled to form net-like structural bodies in pores of a porous support having many pores that are connecting with one another, wherein the nanofibers are cellulose-based nanofibers, and have a number average fiber diameter of from 1 to 100 nm. | 03-19-2015 |
Patent application number | Description | Published |
20090039013 | FILTER MEDIUM FOR LIQUID FILTRATION AND PROCESS FOR PRODUCING THE SAME - A filter medium for liquid filtration of fine texture exhibiting high strength when wetted with water, which filter medium is comprised of a wet-laid nonwoven fabric. There is provided a filter medium for liquid filtration comprised of a wet-laid nonwoven fabric, characterized in that through blending of 0.5 to 40 wt. % of unbeaten natural fibers, it exhibits a very fine texture, a lowering ratio, calculated from bursting strength in ordinary state and bursting strength when wetted with water, of 30% or below, and a bursting strength, had when wetted with water, of 300 kPa or greater. | 02-12-2009 |
20120031063 | LOW-BASIS-WEIGHT FILTER MEDIA FOR AIR FILTERS - An object of the present invention is to improve a problem of the decrease in the internal tearing strength and water repellency in accordance with the decrease in the basis weight of a filter medium for air filters, and to provide a filter medium for air filters that can also address a demand for flame retardancy. The low-basis-weight filter medium for air filters according to the present invention is characterized by glass short fibers (A) and short fibers of hydrophobic chemical synthetic fibers each having a fiber diameter of 5 μm or less (B), as raw material fibers of the filter medium, by a mass ratio (A/B) in the range of from 70/30 to 95/5; a hydrophobic synthetic resin-based binder is added to the filter medium by 3 to 10 parts by mass of with respect to 100 parts by mass of the raw material fibers; and the filter medium has a basis weight of from 25 g/m | 02-09-2012 |
20140342626 | NON-WOVEN FABRIC FOR SEMIPERMEABLE MEMBRANE SUPPORT - Provided is a non-woven fabric for semipermeable membrane support, in which adhesiveness of a semipermeable membrane to a support is satisfactory, the thickness uniformity of the semipermeable membrane is satisfactory, and permeation-through of a coating liquid does not occur. Disclosed is a non-woven fabric for semipermeable membrane support containing organic synthetic fibers as a primary component, wherein a semipermeable membrane is to be supported by one surface of the non-woven fabric, wherein the coated surface to be coated with the semipermeable membrane and the non-coated surface that is opposite to the coated surface of the non-woven fabric both have a Bekk smoothness of 5 seconds or more, and the non-woven fabric has an internal bond strength in the sheet transverse direction in the range from 0.4 to 0.8 N·m. | 11-20-2014 |
20150093560 | POROUS CELLULOSE BODY AND METHOD FOR PRODUCING SAME - A porous body that contains cellulose nanofibers having very thin fiber diameters and high hydrophilicity, and has a large specific surface area, and to provide a method of producing the porous body simply with low cost. A method of producing a porous cellulose comprises a process of lyophilizing a mixed liquid containing cellulose nanofibers and a dispersion medium, wherein the dispersion medium is a mixed dispersion medium of water and an organic solvent dissolving in water, a concentration of the organic solvent in the mixed dispersion medium is 2 to 40 mass %, and a solid content concentration of the cellulose nanofibers in the mixed liquid is 0.001 to 5 mass %. | 04-02-2015 |
20150174535 | NONWOVEN FABRIC FOR SEMIPERMEABLE MEMBRANE SUPPORT - Provided is a nonwoven fabric for semipermeable membrane support, in which adhesiveness of a semipermeable membrane to a support is satisfactory, the thickness uniformity of the semipermeable membrane is satisfactory, and permeation-through of a coating liquid does not occur. Disclosed is a nonwoven fabric for semipermeable membrane support, in which when a region extending from the semipermeable membrane-coated side surface of the nonwoven fabric to a predetermined portion of the total basis weight in the thickness direction is designated as a coated layer region, a region extending from the non-semipermeable membrane-coated surface of the nonwoven fabric to a predetermined portion of the total basis weight in the thickness direction is designated as a non-coated layer region, and a region obtained by excluding the respective predetermined portions of the total basis weight in the thickness direction from both the semipermeable membrane-coated side surface and the non-semipermeable membrane-coated surface of the nonwoven fabric is designated as a middle layer region, the pressure drop per unit basis weight of the middle layer region after the exclusion is lower than the pressure drop per unit basis weight of the coated layer region and the pressure drop per unit basis weight of the non-coated layer region, and the pressure drop per unit basis weight of the middle layer region after the exclusion is in the range of 10% to 70% relative to the pressure drop per unit basis weight of the nonwoven fabric before the exclusion. The predetermined portion is defined to be about 25%. | 06-25-2015 |