Sousa
Alexandre Sousa, Brejos De Azeitao PT
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20130281074 | SYSTEMS AND METHODS FOR SYNCHRONIZING WIRELESS AUDIO BASE STATIONS - Systems and methods for adaptive OTA (over-the-air) synchronization of RF (radio frequency) base stations are described herein. Using these systems and methods, base stations in wireless audio systems can automatically identify externally sourced base station clocks and merge overlapping clock system domains, thereby eliminating the need for complex base station management and network configuration. | 10-24-2013 |
20150351064 | SYSTEMS AND METHODS FOR SYNCHRONIZING WIRLESS AUDIO BASE STATIONS - Systems and methods for adaptive OTA (over-the-air) synchronization of RF (radio frequency) base stations are described herein. Using these systems and methods, base stations in wireless audio systems can automatically identify externally sourced base station clocks and merge overlapping clock system domains, thereby eliminating the need for complex base station management and network configuration. | 12-03-2015 |
Arlindo Sousa, Toronto CA
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20100065703 | Support Bracket for Use With Wall - The invention is a system for mounting an object to a wall, the system including a bracket. The bracket is configured to mount to a wall stud and includes an elongated flat member mounted to an elongated arm member. The elongated flat member has a length, a width, a thickness, opposite first and second ends, opposite first and second sides and opposite and parallel first and second edges extending along the length of the elongated flat member. The width of the first member is selected to span one of the wall studs such that the opposite first and second edges of the elongated flat member are substantially flush with the wall stud when the first side of the elongated flat member is positioned flat against the wall stud. The elongated arm member has a length, opposite first and second ends, a rectangular cross section and opposite first and second sides, the length of the elongated arm member being substantially longer than the width of the elongated flat member. The elongated arm member and elongated flat member are both made of a steel alloy. The elongated arm member is welded to one side of the elongated flat member between the first and second ends of the elongated flat member by a pair of parallel elongated welds such that the elongated arm extends perpendicularly from the elongated flat member, the first end of the elongated arm being aligned with the first edge of the elongated flat member, the first side of the elongated arm member lying flat against the second side of the elongated flat member. The elongated welds extending parallel from the first end of the elongated arm member to the second edge of the elongated flat member. A plurality of apertures are formed on the elongated flat member extending through the thickness of the elongated flat member. The flat member is secured to the wall stud by a plurality of bolts. | 03-18-2010 |
Caetano Reis E. Sousa, London GB
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20090169472 | METHODS AND COMPOSITIONS FOR TREATING IMMUNE DISORDERS - The present invention provides oligonucleotides, compositions comprising them and methods that use the oligonucleotides and compositions for stimulating cells expressing the TLR7 and/or TLR8 receptor. The oligonucleotides comprise for stimulating TLR7 comprise uracil-rich regions. The oligonucleotides for stimulating TLR8 comprise guanine-rich regions. The present methods and compositions are useful, inter alia, for treating or preventing conditions such as infectious disease and cancer. | 07-02-2009 |
20100221265 | IMMUNE MODULATION VIA C-TYPE LECTIN - The invention relates to the regulation of the immune system, and in particular to the finding that the CLEC9a molecule is a marker for dendritic cells which are capable of cross-presenting extracellular antigens via the MHC class I pathway. This makes them particularly suitable for generation of cytotoxic T lymphocyte responses. Materials and methods are provided both for the induction of immune responses against target antigens, and for the inhibition or suppression of undesirable immune responses in which these cells are involved. | 09-02-2010 |
20140328865 | Immune Modulation Via C-Type Lectin - The invention relates to the regulation of the immune system, and in particular to the finding that the CLEC9a molecule is a marker for dendritic cells which are capable of cross-presenting extracellular antigens via the MHC class I pathway. This makes them particularly suitable for generation of cytotoxic T lymphocyte responses. Materials and methods are provided both for the induction of immune responses against target antigens, and for the inhibition or suppression of undesirable immune responses in which these cells are involved. | 11-06-2014 |
Cleberson Jean Sousa, Joinville BR
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20120266435 | METHOD & APPARATUS FOR INSTALLING A BUILT-IN OVEN INTO A CABINET CUT-OUT - A method of installing a replacement built-in oven into a cut-out defined in a kitchen includes identifying a used built-in oven positioned in the cut-out of the kitchen, positioning a height adjuster of the replacement built-in oven into one of a number of predetermined positions based on the identity of the used built-in oven, and installing the replacement built-in oven in the cut-out of the kitchen. | 10-25-2012 |
20120266858 | BUILT-IN OVEN WITH HEIGHT ADJUSTER - A domestic appliance including a built-in oven configured to be positioned in a cut-out defined in a kitchen. The built-in oven includes a housing having a cooking chamber defined therein, a lower frame positioned below the cooking chamber, and a height adjuster coupled the lower frame. The built-in oven has a first vertical height when the height adjuster is positioned in a first predetermined position and a second vertical height when the height adjuster is positioned in a second predetermined position. | 10-25-2012 |
Daniel De Sousa, Caracas VE
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20130070787 | NETWORK DATA ACQUISITION SYSTEM - A system is disclosed which provides for local gathering and translation of information from a wide variety of sources of such information, wherein the translation presents the information in a format which can be received by a wide variety of different applications and end users, and effectively utilized by same. | 03-21-2013 |
Elvino S. Sousa, Toronto CA
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20090233614 | Channel Assignment Based on Spatial Strategies in a Wireless Network Using Adaptive Antenna Arrays - Channels are assigned based on co-spatial constraints in wireless network using spatial division multiple access. In one example, the invention includes assigning a co-spatial constraint to each of a plurality of conventional traffic communications channels of a base station, and receiving a request from a user terminal to communicate using a traffic communication channel of the base station. The invention further includes measuring a quality parameter of the request deriving a co-spatial constraint for the user terminal, assigning the user terminal co-spatial constraint to the user terminal, and assigning the user terminal to a traffic communication channels having a channel co-spatial constraint that is no less than the user terminal co-spatial constraint and that has no more assigned radios than permitted by the channel co-spatial constraint. | 09-17-2009 |
20100118729 | CHANNEL ASSIGNMENT BASED ON SPATIAL STRATEGIES IN A WIRELESS NETWORK USING ADAPTIVE ANTENNA ARRAYS - Channels are assigned based on co-spatial constraints in wireless network using spatial division multiple access. In one example, the invention includes assigning a co-spatial constraint to each of a plurality of conventional traffic communications channels of a base station, and receiving a request from a user terminal to communicate using a traffic communication channel of the base station. The invention further includes measuring a quality parameter of the request deriving a co-spatial constraint for the user terminal, assigning the user terminal co-spatial constraint to the user terminal, and assigning the user terminal to a traffic communication channels having a channel co-spatial constraint that is no less than the user terminal co-spatial constraint and that has no more assigned radios than permitted by the channel co-spatial constraint. | 05-13-2010 |
Fernando Sousa, Rio De Janeiro BR
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20130037271 | Bridging Hanger and Seal Running Tool - A running tool sets and pressure tests a bridging hanger and a packoff in a single trip. The running tool has a stem, an inner body, and a piston. The inner body is connected to the stem so that rotation of the stem relative to the inner body will cause the stem to move longitudinally. The piston is connected to the stem so that the stem and piston rotate and move longitudinally in unison. A piston engagement element is housed in the inner body and is adapted to engage the piston when the bridging hanger is set to prevent premature setting of the packoff. The piston engagement element can be disengaged once the bridging hanger is set, thereby allowing the piston to set the packoff. | 02-14-2013 |
Hisashi Sousa, Kobe-Shi JP
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20120140278 | DOCUMENT INFORMATION DISPLAY CONTROL DEVICE, DOCUMENT INFORMATION DISPLAY METHOD, AND COMPUTER-READABLE STORAGE MEDIUM FOR COMPUTER PROGRAM - A document information display control device is provided which displays, on a display, information on a document having a plurality of pages. The device includes a detector configured to detect an entire state and an individual state that are probably found in a first case where a printer obtains a printed matter of the document by printing the document, or, in a second case where a finisher applies finishing processing to the printed matter, the entire state being a state on an entirety of the printed matter, the individual state being a state on each of the plurality of the pages; and a state information display control portion configured to display a screen including entire state information and individual state information, the entire state information indicating the entire state detected by the detector, and the individual state information indicating the individual state detected by the detector. | 06-07-2012 |
Jackson Maia Sousa, Manaus BR
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20130143602 | APPARATUS AND METHOD FOR EVALUATING VOICE QUALITY IN A MOBILE NETWORK - An example apparatus is provided that receives a first message following conclusion of a voice call between a first apparatus and a second apparatus over a network. And in response to the first message, the apparatus obtains a geographic location of at least the first apparatus, and prepares a second message for transmission to the first apparatus. The second message includes a telephone number of a quality server to enable the first apparatus to initiate a voice call to the telephone number to participate in a voice quality test with the quality server, where the voice quality test includes calculation of a score reflecting a quality of the voice call. The apparatus receives the score, and correlates the score with the geographic location of at least the first apparatus and other network parameters obtained during the test to facilitate tuning the network based on the score and the geographic location. | 06-06-2013 |
Joäo M. Sousa, Sobrado PT
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20110043898 | Adiabatic bend transitions for multimode fibers - Guided adiabatic bend transitions for multimode fibers are presented to preserve the power of guided light in the fundamental mode while guiding from one level of curvature to another for improved operation of mode filters and fiber amplifiers. A method is provided to find the guidance path. Implementations of these transducers include modal power back converters, and guidance paths into and out of higher order mode filtering devices which work on bending. A spiral structure is shown to incorporate adiabatic bends for a forward-pumped fiber amplifier. | 02-24-2011 |
Joäo M. Sousa, Sobrado PT
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20110043898 | Adiabatic bend transitions for multimode fibers - Guided adiabatic bend transitions for multimode fibers are presented to preserve the power of guided light in the fundamental mode while guiding from one level of curvature to another for improved operation of mode filters and fiber amplifiers. A method is provided to find the guidance path. Implementations of these transducers include modal power back converters, and guidance paths into and out of higher order mode filtering devices which work on bending. A spiral structure is shown to incorporate adiabatic bends for a forward-pumped fiber amplifier. | 02-24-2011 |
Joe Sousa, Victoria CA
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20160091119 | NONMETALLIC SHEATHED ELECTRICAL CABLE MOUNTING - A bracket for securing an NM cable includes a generally planar member having a bore having a first diameter defined therein; a sleeve having an inside diameter that is greater than said first diameter, the sleeve is coupled to the bore; and a collar is disposed within the sleeve and substantially abuts the generally planar member, the collar has an outside diameter that allows insertion within the sleeve and an inside diameter that is smaller than the outside diameter thereof whereby the flexible metallic sheathing of an associated cable will abut the collar and the conductors thereof will pass through the collar and the bore. In addition the bracket may include a clamp on the sleeve dimensioned and configured for engaging the outer surface of an associated flexible metallic conduit. | 03-31-2016 |
John Sousa, Caledon Village CA
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20130228394 | Worker Safety Device and Method - A worker safety device for use with an object having a person support surface, the device comprising: a length-adjustable device frame positionable on said object; a frame fastener coupled to the device frame configured to detachably fasten the device frame to the object; an attachment means, attached to the device frame, configured and positioned to attach a personal fall-prevention device to the device frame; whereby a person on said surface using the fall-prevention device can prevent a fall from said surface by attaching the fall-prevention device to the attachment means. | 09-05-2013 |
Jose Manuel Bernardo Sousa, Lisboa PT
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20100081699 | YEAST PLATFORM CONSTRUCTION AND SCREENING METHODS - The present invention relates to a cell which is suitable for screening a candidate agent as being an inhibitor of the metabolism of tryptophan to NAD+ and/or a modulator of NAD+ levels, which cell comprises functional genes of a pathway enabling the metabolism of tryptophan to NAD+ and wherein the cell includes a copy of an exogenous gene of said pathway, from the same or different species as the cell, which exogenous gene is under the control of an inducible or constitutive promoter and wherein any endogenous copy of the gene having the same function as the exogenous gene is a non functioning gene. The present invention also relates to populations of such cells and to methods of screening candidate agents with such cells. | 04-01-2010 |
20100215641 | SCREENING METHOD FOR COMPOUNDS THAT REDUCE ER STRESS - The present invention relates to a cell comprising an Endoplasmic Reticulum (ER) stress element operably linked to a reporter element and an exogenous gene encoding a protein that induces ER stress. Methods of screening using the modified cell, constructs used in the modified cell, the candidate agents identified by the screen and uses thereof are also part of the invention. | 08-26-2010 |
José Manuel Bernardo Sousa, Lisboa PT
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20100081699 | YEAST PLATFORM CONSTRUCTION AND SCREENING METHODS - The present invention relates to a cell which is suitable for screening a candidate agent as being an inhibitor of the metabolism of tryptophan to NAD+ and/or a modulator of NAD+ levels, which cell comprises functional genes of a pathway enabling the metabolism of tryptophan to NAD+ and wherein the cell includes a copy of an exogenous gene of said pathway, from the same or different species as the cell, which exogenous gene is under the control of an inducible or constitutive promoter and wherein any endogenous copy of the gene having the same function as the exogenous gene is a non functioning gene. The present invention also relates to populations of such cells and to methods of screening candidate agents with such cells. | 04-01-2010 |
Kyle Sousa, Stockholm SE
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20090087417 | METHODS FOR PROMOTING DOPAMINERGIC NEURONAL DEVELOPMENT BY USING NG4A-SUBFAMILY AND WNT-LIGANDS - Methods for promoting dopaminergic neuronal development and producing neural cells having a dopaminergic phenotype. Dopaminergic neural cells may be used for treating individuals having a neurodegenerative disease such as Parkinson's disease. Dopaminergic cells may be implanted into the brain of the individual, and/or dopaminergic neural development may be induced or enhanced in the brain of the individual. Methods comprise expressing a nuclear receptor of the NG4A subfamily, e.g. Nurr1, above basal levels within the cell and treating the cell with a Wnt ligand, thereby producing or enhancing proliferation, self-renewal, survival and/or dopaminergic induction, differentiation, survival or acquisition of a neuronal dopaminergic phenotype. The cell may be co-cultured with astrocytes or glial cells and may be contacted with an FGF growth factor. | 04-02-2009 |
Ligia Sousa, Dias Macedo BR
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20120002743 | Statistical Joint Precoding in Multi-Cell, Multi-User MIMO - A network node jointly precodes multi-user (MU) multiple-input multiple-output (MIMO) transmissions simultaneously sent from geographically distributed base stations to a plurality of mobile terminals over associated downlink MU-MIMO channels. The node receives feedback that describes statistics of the downlink MU-MIMO channels, including channel mean and covariance. The node then computes, based on the channel means and covariances, uplink input covariances for the mobile terminals that would collectively maximize a first or second-order approximation of the ergodic capacity of dual uplink MU-MIMO channels, subject to a global transmit power constraint that comprises the sum of individual transmit power constraints for the base stations. Notably, the node also adjusts the uplink input covariances as needed to satisfy the individual transmit power constraints for the base stations, maps the uplink input covariances to corresponding downlink input covariances, and jointly precodes MU-MIMO transmissions sent over the downlink MU-MIMO channels based on those downlink input covariances. | 01-05-2012 |
Lucio Sousa, Toronto CA
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20100065703 | Support Bracket for Use With Wall - The invention is a system for mounting an object to a wall, the system including a bracket. The bracket is configured to mount to a wall stud and includes an elongated flat member mounted to an elongated arm member. The elongated flat member has a length, a width, a thickness, opposite first and second ends, opposite first and second sides and opposite and parallel first and second edges extending along the length of the elongated flat member. The width of the first member is selected to span one of the wall studs such that the opposite first and second edges of the elongated flat member are substantially flush with the wall stud when the first side of the elongated flat member is positioned flat against the wall stud. The elongated arm member has a length, opposite first and second ends, a rectangular cross section and opposite first and second sides, the length of the elongated arm member being substantially longer than the width of the elongated flat member. The elongated arm member and elongated flat member are both made of a steel alloy. The elongated arm member is welded to one side of the elongated flat member between the first and second ends of the elongated flat member by a pair of parallel elongated welds such that the elongated arm extends perpendicularly from the elongated flat member, the first end of the elongated arm being aligned with the first edge of the elongated flat member, the first side of the elongated arm member lying flat against the second side of the elongated flat member. The elongated welds extending parallel from the first end of the elongated arm member to the second edge of the elongated flat member. A plurality of apertures are formed on the elongated flat member extending through the thickness of the elongated flat member. The flat member is secured to the wall stud by a plurality of bolts. | 03-18-2010 |
Ricardo Sousa, Grenoble FR
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20080247072 | MAGNETIC TUNNEL JUNCTION MAGNETIC MEMORY - This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: | 10-09-2008 |
20090147392 | MAGNETIC ELEMENT WITH THERMALLY-ASSISTED WRITING - This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer. | 06-11-2009 |
20110007560 | SPIN POLARISED MAGNETIC DEVICE - A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer. | 01-13-2011 |
20120181642 | MAGNETIC TUNNEL JUNCTION COMPRISING A POLARIZING LAYER - The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell. | 07-19-2012 |
20130182499 | MRAM Cell and Method for Writing to the MRAM Cell using a Thermally Assisted Write Operation with a Reduced Field Current - The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction. | 07-18-2013 |
20130250671 | THERMALLY ASSISTED MAGNETIC WRITING DEVICE - A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer. | 09-26-2013 |
20140016405 | THERMALLY ASSISTED MAGNETIC WRITING DEVICE - A magnetic thermally-assisted switching device includes a reference layer, a storage layer magnetised along a variable direction, a spacer that separates the reference layer and the storage layer, and magnetically decouples them, a device for heating the pinning layer so that, during heating, the temperature of the pinning layer exceeds its blocking temperature such that the direction of magnetisation of the storage layer is no longer pinned, a device for applying a writing magnetic torque tending to align the magnetisation of the storage layer along one of two stable magnetisation directions once the blocking temperature is reached. The device also includes a device for applying a magnetic polarisation field at least during the heating phase before the blocking temperature is reached such that the direction of magnetisation of the storage layer is always along the direction of the magnetic polarisation field at the moment that the blocking temperature is reached. | 01-16-2014 |
20150179245 | METHOD FOR WRITING TO A RANDOM ACCESS MEMORY (MRAM) CELL WITH IMPROVED MRAM CELL LIFESPAN - Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell. | 06-25-2015 |
Rosana Antunes De Sousa, Belo Horizonte BR
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20130037333 | MULTIFUNCTIONAL LOCOMOTOR - MULTIFUNCTIONAL LOCOMOTOR APPARATUS, which conjugates the function of making someone move in standing position, and also sitting in only one object, thus providing more comfort, health, and life quality for handicapped and bedridden people the apparatus including three modules, being each a lower module, an intermediate module, and an upper module, basically comprised of a preferably tubular structure with at least three vertical elements that compose a tubular structure, which is supported by a gripping circular base and yet containing several devices coupled to said tubular structure. | 02-14-2013 |
Sergio Henrique Guerra De Sousa, Rio De Janeiro BR
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20130338985 | Systems and Methods for Reducing Reservoir Simulator Model Run Time - Systems and methods for reducing run time for a reservoir simulator model using a proxy model based on a neural network. | 12-19-2013 |
Tiago Sousa, Frankfurt DE
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20140327673 | REAL-TIME GLOBAL ILLUMINATION USING PRE-COMPUTED PHOTON PATHS - A method for real-time global illumination of a computer graphics scene is described, wherein the method comprises the steps of providing a plurality of samples of a computer graphics scene, each sample including an indication of intersections of sample rays with other samples of the plurality of samples; determining, for each sample of the plurality of samples, a lighting contribution of the sample based on the indication of intersections of the sample; and calculating a global illumination of the computer graphics scene based on the lighting contributions of the samples. Furthermore, a graphics processing unit and a computing system are disclosed. | 11-06-2014 |
Véronique Sousa, Grenoble FR
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20100291748 | METHOD FOR MAKING PMC TYPE MEMORY CELLS - A microelectronic device includes: at least one cell or element including at least one first electrode, at least one second electrode, and at least one stack of thin layers between the first electrode and the second electrode. The stack includes at least one doped chalcogenide layer capable of forming a solid electrolyte, the doped chalcogenide layer being provided on and in contact with the first electrode; at least one interface layer provided on and in contact with the doped chalcogenide layer, the interface layer being based on a material different from the chalcogenide, the material being carbon or carbon comprising a metallic additive or a semiconducting additive; and at least one metallic ion donor layer provided on and in contact with the interface layer, the metallic ion donor layer being an ion source for the solid electrolyte. | 11-18-2010 |
Véronique Sousa, Grenoble FR
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20090098681 | PROCESS FOR MANUFACTURING A CBRAM MEMORY HAVING ENHANCED RELIABILITY - The invention relates to a process for manufacturing a plurality of CBRAM memories, each comprising a memory cell in a chalcogenide solid electrolyte, an anode, and a cathode, the process comprising implementing a sublayer of a high thermal conductivity material, higher than 1.3 W/m/K, which covers the set of contacts, then providing, on said sublayer, a triple layer comprising a chalcogenide layer, then an anodic layer, and a layer with second contacts ( | 04-16-2009 |
20090250775 | MAGNETIC DEVICE WITH INTEGRATED MAGNETO-RESISTIVE STACK - This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic material; and means for causing an electron current to flow perpendicular to the plane of the layers, with at least one integrated nano-contact intended to inject the current into the magneto-resistive stack. The nano-contact is made in a bilayer composed of a solid electrolyte on which has been deposited a soluble electrode composed of a metal, and at least partially dissolved in the electrolyte. | 10-08-2009 |
20100134196 | SPIN-VALVE OR TUNNEL-JUNCTION RADIO-FREQUENCY OSCILLATOR - This radio-frequency oscillator includes a magnetoresistive device in which an electric current is able to flow. The magnetoresistive device includes a first magnetic layer, known as a “trapped layer”, whereof the magnetization is of fixed direction. The magnetoresistive device further includes a second magnetic layer known as a “free layer” and a non-magnetic layer, known as an “intermediate layer”, interposed between the first and second layer, known as the intermediate layer. The oscillator further includes means capable of causing an electron current to flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. One of the three layers constituting the magnetoresistive device includes at least one constriction zone of the electric current passing through it. | 06-03-2010 |
20100291748 | METHOD FOR MAKING PMC TYPE MEMORY CELLS - A microelectronic device includes: at least one cell or element including at least one first electrode, at least one second electrode, and at least one stack of thin layers between the first electrode and the second electrode. The stack includes at least one doped chalcogenide layer capable of forming a solid electrolyte, the doped chalcogenide layer being provided on and in contact with the first electrode; at least one interface layer provided on and in contact with the doped chalcogenide layer, the interface layer being based on a material different from the chalcogenide, the material being carbon or carbon comprising a metallic additive or a semiconducting additive; and at least one metallic ion donor layer provided on and in contact with the interface layer, the metallic ion donor layer being an ion source for the solid electrolyte. | 11-18-2010 |
20110121254 | MEMORY DEVICE AND CBRAM MEMORY WITH IMPROVED RELIABILITY - A memory device including: one inert electrode including an electrically conductive material, a part of at least one material of resistivity higher than that of the material of the inert electrode, positioned around the inert electrode, a solid electrolyte positioned on at least one part of the inert electrode and of the part of electrically insulating material, and including metal ions originating from an ionizable metal part positioned on the solid electrolyte. The ratio between the coefficient of electrical resistivity of the material of resistivity higher than that of the material of the inert electrode and the coefficient of electrical resistivity of the material of the inert electrode is equal to or higher than approximately 100, and the coefficient of thermal conductivity of the electrically insulating material is equal to or higher than approximately 10 W·m | 05-26-2011 |
20120307552 | Process of producing a resistivity-change memory cell intended to function in a high-temperature environment - A process of producing a resistivity-change memory cell is described. The process includes a deposition at room temperature, in amorphous state, of a layer of a nitrogen (N)-doped alloy of germanium (Ge) and tellurium (Te) to constitute the resistivity-change material of the memory cell. An annealing is then performed such as to limit the type of re-crystallisation by nucleation starting from the amorphous state of the phase-change material. The material used and the process permit the data retention at high temperature to be significantly improved. | 12-06-2012 |
20140070158 | PHASE-CHANGE MEMORY CELL - A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region. | 03-13-2014 |
20140070163 | PHASE-CHANGE MEMORY CELL - A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical. | 03-13-2014 |