Patent application number | Description | Published |
20110039901 | PROCESS FOR PREPARING A CRYSTALLINE FORM COMPOUND OF 3-BENZYL-2-METHYL-2,3,3a,4,5,6,7,7a-OCTAHYDROBENZO[d]ISOXAZOL-4-ONE - A process for preparing a crystalline form compound of 3-benzyl-2-methyl-2,3,3a,4,5,6,7,7a-octahydrobenzo[d]isoxazol-4-one is described, comprising the step of reacting 3-benzyl-2-methyl-2,3,3a,4,5,6,7,7a-octahydrobenzo[d]isoxazol-4-one and fumaric acid in one or more solvents, wherein at least one solvent is a solvent having a carbon atom number of from 3 to 6, said solvent being non-halogenated and having a dielectric constant ∈ in the range from 4 to 25. The process of the invention enables to obtain a co-crystal comprising 3-benzyl-2-methyl-2,3,3a,4,5,6,7,7a-octahydrobenzo[d]isoxazol-4-one and fumaric acid. | 02-17-2011 |
20110039902 | PROCESS FOR PREPARING A CRYSTALLINE FORM COMPOUND OF 3-BENZYL-2-METHYL-2,3,3a,4,5,6,7,7a-OCTAHYDROBENZO[d]ISOXAZOL-4-ONE - A process for preparing a crystalline form compound of 3-benzyl-2-methyl-2,3,3a,4,5,6,7,7a-octahydrobenzo[d]isoxazol-4-one is described, comprising the step of reacting 3-benzyl-2-methyl-2,3,3a,4,5,6,7,7a-octahydroben-zo[d]isoxazol-4-one with oxalic acid in one or more solvents, wherein at least one solvent is a solvent having a carbon atom number of from 3 to 6, said solvent being non-halogenated and having a dielectric constant ∈ within the range from 4 to 25. The process of the invention enables a co-crystal comprising 3-benzyl-2-methyl-2,3,3a,4,5,6,7,7a-octahydrobenzo[d]isoxazol-4-one and oxalic acid to be obtained. | 02-17-2011 |
Patent application number | Description | Published |
20100099276 | Method of connecting printed circuit boards and corresponding arrangment - Connecting a first ( | 04-22-2010 |
20110199773 | Mounting Arrangement for Lighting Devices, Corresponding Lighting Devices and Method - A mounting arrangement for a light source (L) having associated a Printed Circuit Board, wherein said mounting arrangement includes: a housing (H) with an exit opening for light from the source (L), a reflector (R) to reflect light from the source (L) towards the opening, an at least partly transparent cover ( | 08-18-2011 |
20110208489 | Method of Designing Optical Systems and Corresponding Optical System - An optical system including at least one light source, such as a LED source ( | 08-25-2011 |
20120262425 | DISPLAY DEVICE AND DISPLAY METHOD THEREFOR - In various embodiments, a device for displaying a signal, including an optical guide defining at least one propagation path for an optical radiation from an injection point of the radiation, in which the optical radiation propagating along this path is subject to attenuation due to being diffused and made visible outside said guide, and at least one source of optical radiation for receiving said signal and generating an optical radiation whose intensity is a function of said signal; said at least one optical radiation source being coupled to said at least one injection point to inject into said guide the optical radiation generated by said radiation source. | 10-18-2012 |
20120314412 | LED Lighting Device for Producing Multi-Chromatic Light Radiation - A lighting device ( | 12-13-2012 |
20130026928 | STREET LIGHTING DEVICE - In various embodiments, a street lighting device with a first light source for illuminating the street plane from above is provided. The device may include a second light source located at a closer position to the street plane than said first light source; a sensor sensitive to the occurrence of conditions of reduced ambient visibility; and a controller connected to said sensor and capable of activating said second light source in the presence of said conditions of reduced ambient visibility. | 01-31-2013 |
20130094222 | Reflector for light sources and light source device - A reflector for light radiation sources, the reflector taking the form, for example, of a cup centered around a main axis with a bottom opening for a source of light radiation, the reflector including a cup-shaped base portion extending from the bottom opening to an outer rim, and an annular portion surrounding the outer rim. The annular portion may be telescopically coupled to the base portion and may be moveable with respect to the base portion along the main axis in order to vary the length over which the annular portion extends along the main axis with respect to the outer rim of the base portion. | 04-18-2013 |
20130148349 | Lighting Device and Associated Method - A lighting device comprises a housing carrying a linear array of light radiation sources and one or more elongated diffusive screens arranged facing the array of light sources so as to be passed through by the light radiation. The screen or screens have a pattern of geometric features for producing a radiation pattern of the light radiation emitted by the lighting device as a result of passing through the diffusive screen or screens. By replacing the diffusive screen or screens with screens which have a different pattern of geometric features it is possible to vary the radiation pattern of the light radiation emitted by the lighting device. | 06-13-2013 |
Patent application number | Description | Published |
20100021925 | Isolation of nucleic acids on surfaces - New processes and equipment to isolate and purify nucleic acids on surfaces are provided. The invention focuses on processes which use surfaces, for example, porous membranes, on which the nucleic acids are immobilized in a simple manner from the sample containing the nucleic acids and can be released again by way of simple procedural steps, whereby the simple performance of the process according to the invention makes it possible to perform the processes specifically in a fully automatic manner. An additional aspect of the present invention focuses on binding the nucleic acids to an immobile phase, especially to a membrane, in such a way and manner, that they can be released without difficulty during an additional reaction stage from this phase and, if desired, can be used in other applications, such as restriction digestion, RT, PCR or RT-PCR, or in any of the suitable analyses or enzyme reactions mentioned in the disclosure. Special isolation devices are provided that can be used to carry out the processes according to the invention. | 01-28-2010 |
20100159460 | Isolation of nucleic acids on surfaces - New processes and equipment to isolate and purify nucleic acids on surfaces are provided. The invention focuses on processes which use surfaces, for example, porous membranes, on which the nucleic acids are immobilized in a simple manner from the sample containing the nucleic acids and can be released again by way of simple procedural steps, whereby the simple performance of the process according to the invention makes it possible to perform the processes specifically in a fully automatic manner. An additional aspect of the present invention focuses on binding the nucleic acids to an immobile phase, especially to a membrane, in such a way and manner, that they can be released without difficulty during an additional reaction stage from this phase and, if desired, can be used in other applications, such as restriction digestion, RT, PCR or RT-PCR, or in any of the suitable analyses or enzyme reactions mentioned in the disclosure. Special isolation devices are provided that can be used to carry out the processes according to the invention. | 06-24-2010 |
Patent application number | Description | Published |
20090043004 | Dental Materials Containing Hydrophobic Nanoparticulate Silicic Acid Co-Condensates and Use Thereof - The present invention relates to dental materials comprising liquid, nanoparticulate functionalized hydrophobic co-condensates of tetraalkyl silicates with functionalized trialkoxysilanes of the formula I | 02-12-2009 |
20090186960 | DENTAL MATERIALS WITH SURFACE-FUNCTIONALIZED FILLERS - The invention relates to a polymerizable composition which is characterized in that it contains at least one filler that is surface-functionalized with groups of formula (I), wherein groups of formula (I) | 07-23-2009 |
20090239971 | POLYMER-COATED GLASS FILLER FOR USE IN DENTAL MATERIALS - Filler based on glass particles which contain a homo- or copolymer of vinyl chloride on the surface, process for its preparation and its use as a dental material. | 09-24-2009 |
20110126421 | Method For Removing Water From A Mixture - The invention relates to a method for removing water from a mixture containing at least one compound having at least one group reactive towards isocyanate and containing water, the mixture being applied to the surface of a rotating body A, the mixture flowing over the surface of the rotating body A to an outer region of the surface of the rotating body A and water evaporating from the mixture. In particular, this method is suitable for removing water from alcohols and amines. | 06-02-2011 |
20110132144 | Method For Producing Metal Nanoparticles In Polyols - The invention relates to a process for the preparation of metal nanoparticles, selected from the group consisting of lead, bismuth, zinc, antimony, indium, gold, nickel, cobalt, palladium, platinum, iridium, osmium, rhodium, ruthenium, rhenium, vanadium, chromium, manganese, niobium, molybdenum, tungsten, tantalum, cadmium, silver and/or copper, on a rotating body, characterized in that a reduction of corresponding metal salts, corresponding metal salt complexes, corresponding metal hydroxides and/or corresponding metal oxides by polyols having a number of hydroxyl groups in the polyol of 1 to 10 and a molecular weight of the polyols of 2000 to 18 000 Da is effected. | 06-09-2011 |
20110132551 | Method For Removing Non-Reacted Isocyanate From Its Reaction Product - The present invention relates to a method for removing isocyanate from a reaction product of isocyanate with compounds reactive towards isocyanates, the reaction product being applied to the surface of a rotating body A, the reaction product flowing over the surface of the rotating body A to an outer region of the surface of the rotating body A and isocyanate which was used for the preparation of the reaction product and has not reacted evaporating from the mixture in the process. | 06-09-2011 |
20110144288 | Production of Silylated Polyurethane and/or Polyurea - The invention relates to a process for the preparation of silylated polyurethanes and/or polyureas, comprising the steps: a) application of a component β) containing isocyanate and of a component α) containing polyol and/or polyamine to at least one surface of body A, which surface rotates about an axis of rotation and has a temperature between 60 and 400° C., and b) reaction of the reaction product of β) isocyanate and α) polyol and/or polyamine with a silylating agent. | 06-16-2011 |
20110306696 | Continuous Production of Copolymers Suitable as Flow Agents - The invention relates to a process for the preparation of copolymers containing acid monomer structural units and polyether macromonomer structural units, which is carried out in a continuous mode of operation in a reactor which has
| 12-15-2011 |
20110309533 | Rotating surfaces for SDR - The proposed spinning disc reactor comprises substantially a horizontally rotatable, disc-like and thermostatable support element which has an outer reaction surface, feed means for feeding at least one reactant onto the reaction surface and internal structures for thermostating the reaction surface. In addition, it contains at least one separation apparatus for collecting and removing the reaction product from the reaction surface. The support element is characterized in particular in that it consists of two components a) and b) arranged horizontally one on top of the other and having substantially identical surface measures. These two components are connected to one another in an interlocking manner and tightly during the operating time and the lower component a) has, on its top facing the inner region of the support element, at least one substantially uninterrupted groove milled in over an extensive area and intended for receiving, conducting and discharging a heat-transfer fluid. In addition, it has at least two bores for feeding and discharging the heat-transfer fluid, at least one profiled seal encircling the outer surface region being arranged between the component a) and the component b). The two components a) and b) as a whole are reversibly connected to one another. As a result of such specific features, a simply designed reactor which is advantageous with respect to maintenance, is versatile and permits targeted control of the chemical reaction on its rotating surface is present. | 12-22-2011 |
20120129685 | PROCESS FOR PREPARING MULTIMETAL CYANIDE COMPOUNDS - The invention relates to a process for preparing multimetal cyanide compounds by reacting the aqueous solution of a metal salt a) with the aqueous solution of a hexacyanometalate compound b), wherein the mixture of the solutions a) and b) flows over the surface of a rotating body A to an outer region of the surface of the rotating body A and is flung off from there. | 05-24-2012 |
20140045969 | Curable Composition - The invention relates to a composition comprising (A) at least 5% by weight of en organic prepolymer P having at least two water-crossilnkable organosilicon end groups, (B) 0.01% to 3.0% by weight of boric acid and/or bone ester, and (C) 0.01% to 3.0% by weight of an amine component. Additionally disclosed is a method for the curing of these compositions and also the use of boric acid and/or boric esters and an amine component a condensation catalyst. | 02-13-2014 |
Patent application number | Description | Published |
20090186033 | ANTI-AMYLOID IMMUNOGENIC COMPOSITIONS, METHODS AND USES - The present invention provides a recombinant immunogenic obtained by tandem multimerization of a B-cell epitope bearing fragment of Aβ42, within the active loop site of a carrier (display site), preferably bacterial thioredoxin (Trx). Polypeptides bearing multiple copies of Aβ42 fragments, preferably with an interposed amino acid linker, were constructed and injected into mice in combination with an adjuvant. Monoclonal antibodies were made which recognize the immunogenic construct comprising a carrier bearing at least one fragment of Aβ42 within an active loop site of the carrier. The elicited antibodies were found to selectively bind to fibrillar and/or oligomers Aβ within neuritic AD plaques. | 07-23-2009 |
20100028353 | ANTI-AMYLOID IMMUNOGENIC COMPOSITIONS, METHODS AND USES - Polypeptide based on a tandem array of repeats of the N-terminal 7 amino acids of Aβ42, preferably positioned within the active loop site of a carrier such as bacterial thioredoxin (Trx) are useful for treating and/or preventing Alzheimer's disease. Antibodies raised against these recombinant constructs were found to have a very strong affinity for Aβ42. | 02-04-2010 |
20110293621 | IMMUNOGENIC POLYPEPTIDES COMPRISING A SCAFFOLD POLYPEPTIDE AND A L2 POLYPEPTIDE OR A FRAGMENT THEREOF - The present invention relates to an immunogenic polypeptide comprising a) a scaffold polypeptide, and b) a L2 polypeptide or a fragment of said L2 polypeptide, wherein said scaffold polypeptide constrains the structure of said L2 polypeptide, or of a fragment of said L2 polypeptide. Moreover, the present invention relates to a vaccine comprising said immunogenic polypeptide. The present invention is also concerned with a method for producing an antibody against human papillomavirus. Also encompassed by the present invention is an antibody obtained by carrying out the said method. | 12-01-2011 |
Patent application number | Description | Published |
20110037464 | TUNABLE GRAPHENE MAGNETIC FIELD SENSOR - A magnetic field sensor employing a graphene sense layer, wherein the Lorentz force acting on charge carriers traveling through the sense layer causes a change in path of charge carriers traveling through the graphene layer. This change in path can be detected indicating the presence of a magnetic field. The sensor includes one or more gate electrodes that are separated from the graphene layer by a non-magnetic, electrically insulating material. The application of a gate voltage to the gate electrode alters the electrical resistance of the graphene layer and can be used to control the sensitivity and speed of the sensor. | 02-17-2011 |
20110068320 | QUANTUM WELL GRAPHENE STRUCTURE - An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low density of charged defects that can lead to scattering of charge carriers in the graphene layer. The high dielectric constant of the layers surrounding the graphene layer also prevents charge carrier scattering by minimizing interaction between the charge carriers and the charged defects in the surrounding layers. An interracial layer constructed of a thin, non-polar, dielectric material can also be provided between the graphene layer and each of the highly ordered crystalline high dielectric constant layers to minimize charge carrier scattering in the graphene layer through remote interfacial phonons. | 03-24-2011 |
20110151278 | MAGNETIC DEVICES AND MAGNETIC MEDIA WITH GRAPHENE OVERCOAT - A magnetic disk according to one embodiment includes a recording layer; and a layer of graphene formed above the recording layer. A nucleation layer may be formed between the recording layer and the graphene layer in some approaches. A magnetic device according to another embodiment includes a transducer; a nucleation layer formed above the transducer; and a layer of graphene formed on the nucleation layer. A method according to one embodiment includes forming a nucleation layer above a magnetic layer of a magnetic disk or magnetic device; and forming a layer of graphene on the nucleation layer. A method according to another embodiment includes depositing SiC above a magnetic layer of a magnetic disk or magnetic device, the SiC being equivalent to several monolayers thick; and surface heating the SiC to selectively evaporate some of the Si from the SiC for forming a layer of graphene on a SiC layer. Additional products and methods are also presented. | 06-23-2011 |
20120063033 | MAGNETIC FIELD SENSOR WITH GRAPHENE SENSE LAYER AND FERROMAGNETIC BIASING LAYER BELOW THE SENSE LAYER - A graphene magnetic field sensor has a ferromagnetic biasing layer located beneath and in close proximity to the graphene sense layer. The sensor includes a suitable substrate, the ferromagnetic biasing layer, the graphene sense layer, and an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene sense layer. The underlayer may be a hexagonal boron-nitride (h-BN) layer, and the sensor may include a seed layer to facilitate the growth of the h-BN underlayer. The ferromagnetic biasing layer has perpendicular magnetic anisotropy with its magnetic moment oriented substantially perpendicular to the plane of the layer. The graphene magnetic field sensor based on the extraordinary magnetoresistance (EMR) effect may function as the magnetoresistive read head in a magnetic recording disk drive. | 03-15-2012 |
20120261640 | QUANTUM WELL GRAPHENE STRUCTURE FORMED ON A DIELECTRIC LAYER HAVING A FLAT SURFACE - An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low density of charged defects that can lead to scattering of charge carriers in the graphene layer. The high dielectric constant of the layers surrounding the graphene layer also prevents charge carrier scattering by minimizing interaction between the charge carriers and the changed defects in the surrounding layers. An interracial layer constructed of a thin, non-polar, dielectric material can also be provided between the graphene layer and each of the highly ordered crystalline high dielectric constant layers to minimize charge carrier scattering in the graphene layer through remote interfacial phonons. | 10-18-2012 |
20130114165 | FePt-C BASED MAGNETIC RECORDING MEDIA WITH ONION-LIKE CARBON PROTECTION LAYER - A magnetic media for magnetic data recording having a plurality of magnetic grains protected by thin layers of graphitic carbon. The layers of graphitic carbon are formed in a manner similar to onion skins on an onion and can be constructed as single monatomic layers of carbon. The thin layers of graphitic carbon can be formed as layers of graphene or as fullerenes that either cover or partially encapsulate the magnetic gains. The layers of graphitic carbon provide excellent protection against corrosion and wear and greatly reduce magnetic spacing for improved magnetic performance. | 05-09-2013 |
20130170075 | SYSTEM, METHOD AND APPARATUS FOR MAGNETIC MEDIA WITH A NON-CONTINUOUS METALLIC SEED LAYER - A magnetic media has a substrate with an underlayer and a seed layer on the underlayer. The seed layer has a non-continuous metallic layer with a cubed crystalline lattice that is 001 textured, and has a lattice mismatch within 15% of a crystalline lattice structure of FePt with a metallic additive. This structure defines nucleation sites with an established epitaxial interface. | 07-04-2013 |
20140014616 | METHOD FOR MAKING A PERPENDICULAR THERMALLY-ASSISTED RECORDING (TAR) MAGNETIC RECORDING DISK HAVING A CARBON SEGREGANT - A method of making a thermally-assisted recording (TAR) disk includes etching an initial layer of generally spherically shaped FePt grains encapsulated by shells of graphitic carbon layers. The etching partially or completely removes the carbon layers on the tops of the shells, exposing the FePt grains while leaving carbon segregant material between the FePt grains. Additional Fe, Pt and C are then simultaneously deposited. The additional Fe and Pt grow on the exposed FePt grains and increase the vertical height of the grains, resulting in growth of columnar FePt grains. The additional C forms on top of the grains that together with the intergranular carbon form larger carbon shells. The resulting FePt grains thus have a generally columnar shape with perpendicular magnetic anisotropy, rather than a generally spherical shape. Lateral grain isolation is maintained by the carbon segregant remaining between the grains. | 01-16-2014 |
20140322431 | PREDICTING A CHARACTERISTIC OF AN OVERCOAT - A method for predicting a characteristic of an overcoat for a media for a hard disc drive is disclosed. An overcoat is probed via a microscope using inelastic scattering of a photon by optical phonons from the overcoat to generate data related to in-plane bond-stretching motion of pairs of atoms of the overcoat. The data is fit to a curve at a computer system. A characteristic of the overcoat is predicted based on the curve at the computer system. | 10-30-2014 |
20140332496 | MEDIA ETCH PROCESS - A method for etching a media is disclosed. A first magnetic layer comprising grains is deposited with a segregant such that a portion of the first segregant covers a top surface of the grains of the first magnetic layer and a second portion of the first segregant separates the grains of the first magnetic layer. The first segregant is etched to remove the portion of the first segregant that covers the top surface of the grains. | 11-13-2014 |
Patent application number | Description | Published |
20100328996 | PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES - A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of “non-constant” concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions. | 12-30-2010 |
20110097825 | Methods For Reducing Recrystallization Time for a Phase Change Material - A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer material are selected. The buffer layer material is deposited on the substrate, the phase change material is deposited on the buffer layer, and the cladding layer material is deposited on the phase change material to form a memory cell element. The thickness of the phase change material is preferably less than 30 nm and more preferably less than 10 nm. The recrystallization time of the phase change material of the memory cell element is determined. If the recrystallization time is not less than a length of time X, these steps are repeated while changing at least one of the selected materials and material thicknesses. | 04-28-2011 |
20120193595 | COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS - A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition. | 08-02-2012 |
20130234093 | COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS - A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition. | 09-12-2013 |
20140069577 | Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability - Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a method of fabricating an electronic device is provided which includes the following steps. A single-crystal phase change material is formed on a first substrate. At least one first electrode in contact with a first side of the single-crystal phase change material is formed. The single-crystal phase change material and the at least one first electrode in contact with the first side of the single-crystal phase change material form a transfer structure on the first substrate. The transfer structure is transferred to a second substrate. At least one second electrode in contact with a second side of the single-crystal phase change material is formed. A single-crystal phase change material-containing structure and electronic device are also provided. | 03-13-2014 |
20140070155 | Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability - Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a structure is provided having a substrate; an insulator over the substrate; and a single-crystal phase change material over the insulator. In another aspect, an electronic device is provided having a substrate; an insulator over the substrate; and a single-crystal phase change material over the insulator, wherein the single-crystal phase change material makes up a plurality of cells of the electronic device, each of the cells being configured to have one of two forms: 1) a first form consisting solely of single-crystal phase change material, and 2) a second form consisting of a region of single-crystal phase change material in contact with a region of amorphous phase change material. | 03-13-2014 |
20140151770 | THIN FILM DEPOSITION AND LOGIC DEVICE - A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer. | 06-05-2014 |
20140151771 | THIN FILM DEPOSITION AND LOGIC DEVICE - A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer. | 06-05-2014 |
20150048291 | PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL - A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase. | 02-19-2015 |
Patent application number | Description | Published |
20080224204 | PROCESS FOR MANUFACTURING A MULTI-DRAIN ELECTRONIC POWER DEVICE INTEGRATED IN SEMICONDUCTOR SUBSTRATE AND CORRESPONDING DEVICE - A process manufactures a multi-drain power electronic device integrated on a semiconductor substrate of a first type of conductivity whereon a drain semiconductor layer is formed. The process includes: forming a first semiconductor epitaxial layer of the first type of conductivity of a first value of resistivity forming the drain epitaxial layer on the semiconductor substrate, forming first sub-regions of a second type of conductivity by means of a first selective implant step with a first implant dose, forming second sub-regions of the first type of conductivity by means of a second implant step with a second implant dose, forming a surface semiconductor layer wherein body regions of the second type of conductivity are formed being aligned with the first sub-regions, carrying out a thermal diffusion process so that the first sub-regions form a single electrically continuous column region being aligned and in electric contact with the body regions. | 09-18-2008 |
20090001460 | PROCESS FOR MANUFACTURING A MULTI-DRAIN ELECTRONIC POWER DEVICE INTEGRATED IN SEMICONDUCTOR SUBSTRATE AND CORRESPONDING DEVICE - A process manufactures a multi-drain power electronic device on a semiconductor substrate of a first conductivity type and includes: forming a first semiconductor layer of the first conductivity type on the substrate, forming a second semiconductor layer of a second conductivity type on the first semiconductor layer, forming, in the second semiconductor layer, a first plurality of implanted regions of the first conductivity type using a first implant dose, forming, above the second semiconductor layer, a superficial semiconductor layer of the first conductivity type, forming in the surface semiconductor layer body regions of the second conductivity type, thermally diffusing the implanted regions to form a plurality of electrically continuous implanted column regions along the second semiconductor layer, the plurality of implanted column regions delimiting a plurality of column regions of the second conductivity type aligned with the body regions. | 01-01-2009 |
20110034010 | PROCESS FOR MANUFACTURING A MULTI-DRAIN ELECTRONIC POWER DEVICE INTEGRATED IN SEMICONDUCTOR SUBSTRATE AND CORRESPONDING DEVICE - A process manufactures a multi-drain power electronic device on a semiconductor substrate of a first conductivity type and includes: forming a first semiconductor layer of the first conductivity type on the substrate, forming a second semiconductor layer of a second conductivity type on the first semiconductor layer, forming, in the second semiconductor layer, a first plurality of implanted regions of the first conductivity type using a first implant dose, forming, above the second semiconductor layer, a superficial semiconductor layer of the first conductivity type, forming in the surface semiconductor layer body regions of the second conductivity type, thermally diffusing the implanted regions to form a plurality of electrically continuous implanted column regions along the second semiconductor layer, the plurality of implanted column regions delimiting a plurality of column regions of the second conductivity type aligned with the body regions. | 02-10-2011 |
20110049616 | SEMICONDUCTOR STRUCTURE FOR A POWER DEVICE AND CORRESPONDING MANUFACTURING PROCESS - An embodiment of a semiconductor structure for a power device integrated on a semiconductor substrate, of a first type of conductivity, and comprising:—an epitaxial layer, of said first type of conductivity, made on said semiconductor substrate, and having a plurality of column structures, of a second type of conductivity, to define a charge balancing region;—an active surface layer made on said epitaxial layer for housing a plurality of active regions; said epitaxial layer comprising a semiconductor separating layer arranged between the charge balancing region and the active surface layer, said semiconductor separating layer decoupling said column structures from said active regions. | 03-03-2011 |
Patent application number | Description | Published |
20080272447 | METHOD FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE, IN PARTICULAR AN OPTICAL MICROSWITCH, AND MICRO-ELECTRO-MECHANICAL DEVICE THUS OBTAINED - A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein. | 11-06-2008 |
20120208343 | METHOD FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE, IN PARTICULAR AN OPTICAL MICROSWITCH, AND MICRO-ELECTRO-MECHANICAL DEVICE THUS OBTAINED - A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein. | 08-16-2012 |
Patent application number | Description | Published |
20100247689 | Agent containing fat (oil), which contains onion extract, the production and use thereof for caring, preventing or treating damaged skin tissue, especially scarred tissue - The invention relates to a novel agent containing fat (oil), which contains onion extract, in addition to the production and use thereof for caring, preventing or treating damaged skin tissue, such as after operations, biopsies, wounds, burns and other accidents, and especially scarred tissue, stretch marks, degenerative skin conditions and others. The agent is characterised in that the base thereof is based on oil, which can be used to produce, for example, cream, lotion, fluid, massage, or balm based products which contain fail (oil). Surprisingly, the onion extract, which contains water, alcohol or water-alcohol, can be integrated into a base containing oil without the effectiveness thereof being reduced or a phase separation being produced. The effectiveness thereof could be proved when the medical application thereof was monitored. | 09-30-2010 |
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20090272976 | METHOD FOR PRODUCING NMOS AND PMOS DEVICES IN CMOS PROCESSING - A method for producing one or more nMOSFET devices and one or more pMOSFET devices on the same semiconductor substrate is disclosed. In one aspect, the method relates to the use of a single activation anneal that serves for both Si NMOS and Ge pMOS. By use of a solid phase epitaxial regrowth (SPER) process for the Si nMOS, the thermal budget for the Si NMOS can be lowered to be compatible with Ge pMOS. | 11-05-2009 |
20100295159 | Method for Formation of Tips - The present invention provides a method ( | 11-25-2010 |
20100320606 | Method for Forming MEMS Devices Having Low Contact Resistance and Devices Obtained Thereof - The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted. | 12-23-2010 |
20110127650 | Method of Manufacturing a Semiconductor Device and Semiconductor Devices Resulting Therefrom - A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed. | 06-02-2011 |
20120034762 | Method for Selective Deposition of a Semiconductor Material - A method is disclosed comprising providing a substrate comprising an insulating material and a second semiconductor material and pre-treating the substrate with a plasma produced from a gas selected from the group consisting of a carbon-containing gas, a halogen-containing gas, and a carbon-and-halogen containing gas. The method further comprises depositing a first semiconductor material on the pre-treated substrate by chemical vapor deposition, where the first semiconductor material is selectively deposited on the second semiconductor material. The method may be used to manufacture a semiconducting device, such as a microelectromechanical system device, or to manufacture a semiconducting device feature, such as an interconnect. | 02-09-2012 |
20130187669 | Calibration of Micro-Mirror Arrays - A built-in self-calibration system and method for a micro-mirror array device, for example, operating as a variable focal length lens is described. The calibration method comprises determining a capacitance value for each micro-mirror element in the array device at a number of predetermined reference angles to provide a capacitance-reference angle relationship. From the capacitance values, an interpolation step is carried to determine intermediate tilt angles for each micro-mirror element in the array. A voltage sweep is applied to the micro-mirror array and capacitance values, for each micro-mirror element in the array, are measured. For a capacitance value that matches one of the values in the capacitance-reference angle relationship, the corresponding voltage is linked to the associated tilt angle to provide a voltage-tilt angle characteristic which then stored in a memory for subsequent use. | 07-25-2013 |
20140368920 | Micro-Mirror Arrays - Micro-mirror arrays configured for use in a variable focal length lens are described herein. An example variable focal length lens comprises a micro-mirror array having a plurality of micro-mirror element arranged in at least a first section and a second section. Each micro-mirror element has a tilt axis and comprises, on each of two opposing sides of the tilt axis, (i) at least one actuation electrode, (ii) at least one measurement electrode, and (iii) at least one stopper. Additionally, each micro-mirror element in the first section has a first tilt axis range, and each micro-mirror element in the second section has a second tilt axis range, with the first tilt axis range being less than the second tilt axis range. | 12-18-2014 |
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20080262121 | Plurisubstituted Hydroxyapatite and the Composite Thereof With a Natural and/or Synthetic Polymer, Their Preparation and Uses Thereof - The present invention relates to a hydroxyapatite multi-substituted with, physiologically compatible ion species and to its biohybrid composite with a natural and/or synthetic polymer, which are useful in the preparation of a biomimetic bone substitute for treating bone tissue defects. Furthermore, the present invention relates to a method for their preparation and uses . | 10-23-2008 |
20140134258 | IMPLANTS FOR "LOAD BEARING" BONE SUBSTITUTIONS HAVING HIERARCHICAL ORGANIZED ARCHITECTURE DERIVING FROM TRANSFORMATION OF VEGETAL STRUCTURES - The present invention relates to a bone substitute comprising a core based on hydroxyapatite (HA), obtained from at least one porous wood, or based on collagen fibres and hydroxyapatite, and a shell, based on hydroxyapatite (HA) or silicon carbide (SiC), obtained from at least one wood having a lower porosity than the at least one wood of the core. The porous wood has a total porosity of between 60% and 95%, preferably between 65% and 85%, and it is selected from amongst the choices of rattan, pine, abachi and balsa wood. The wood of the shell has a porosity of between 20% and 60%, preferably between 30% and 50%. The bone substitute is utilized for the substitution and regeneration of bone, preferably for bones subjected to mechanical loads, such as long bones of the leg and arm, preferably the tibia, metatarsus, femur, humerus or radius. | 05-15-2014 |
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20090181423 | SUBSTANTIALLY ANIMAL PROTEIN-FREE RECOMBINANT FURIN AND METHODS FOR PRODUCING SAME - The present invention relates to recombinant furin (rFurin) and methods for producing rFurin. More specifically, the invention relates to substantially animal protein-free rFurin and methods for producing substantially animal protein-free rFurin. | 07-16-2009 |
20090215123 | Method for Producing Continuous Cell Lines - The present invention relates to a method for production of continuous cell lines comprising providing living cells of an animal or a human, irradiating said cells with UV light, proliferating said cells and selecting multiplying cells as cells of a continuous cell line. | 08-27-2009 |
20100120093 | Method of Producing Serum-Free Insulin-Free Factor VII - The invention provides methods and compositions for the serum-free, insulin-free production of recombinant Factor VII. | 05-13-2010 |
20110076719 | Substantially Animal Protein-Free Recombinant Furin and Methods for Producing the Same - The present invention relates to recombinant furin (rFurin) and methods for producing rFurin. More specifically, the invention relates to substantially animal protein-free rFurin and methods for producing substantially animal protein-free rFurin. | 03-31-2011 |
20150072414 | METHOD FOR PRODUCING CONTINUOUS CELL LINES - The present invention relates to a method for production of continuous cell lines comprising providing living cells of an animal or a human, irradiating said cells with UV light, proliferating said cells and selecting multiplying cells as cells of a continuous cell line. | 03-12-2015 |
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20090285963 | FREE-FLOWING GELATIN COMPOSITION - In order to provide a novel free-flowing gelatin composition, in particular for use as food precursor, which gelatin composition retains its flowability, in particular even at temperatures below 30° C., it is proposed that the free-flowing gelatin composition comprises an aqueous liquid, gelatin gel particles dispersed therein and/or dissolved gelatin hydrolysate and one or more sugar components, wherein the sum of the contents of gelatin, gelatin hydrolysate and sugar components(s) is selected such that the water activity (aw value) of the composition is less than or equal to 0.97. | 11-19-2009 |
20110135699 | PARTICLES OF COLLAGEN MATERIAL AND PROCESS FOR THE PREPARATION - In order to provide a product that is suitable as fat substitute in foods, which can be produced simply and inexpensively and is deemed safe from the nutritional physiology viewpoint and with which the typical texture of fat-containing foods can be simulated as favourably as possible, particles of collagen material are proposed which are substantially insoluble and swellable in water, wherein in swollen state the particles have an average diameter of less than approximately 150 μm. A process for the production of this product is additionally proposed. | 06-09-2011 |
20140287123 | SUGAR CONFECTIONARY PRODUCT ON THE BASIS OF A GELATIN GEL AND METHOD FOR ITS PRODUCTION - The present invention relates to a sugar confectionary product on the basis of a gelatin gel, comprising approximately 1% to approximately 15% by weight of gelatin, and approximately 20% to approximately 85% by weight of at least one sugar and/or sugar substitute. In order to increase the melting point of the gelatin gel, it is proposed that the sugar confectionary product contains one or more polyphenols. | 09-25-2014 |