Sih
Kai Tern Sih, Dresden DE
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20130203244 | METHODS FOR PFET FABRICATION USING APM SOLUTIONS - A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing an integrated circuit comprising a p-type field effect transistor (pFET), recessing a surface region of the pFET using an ammonia-hydrogen peroxide-water (APM) solution to form a recessed pFET surface region, and depositing a silicon-based material channel on the recessed pFET surface region. | 08-08-2013 |
Roderick Peng Tze Sih, Singapore SG
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20100144670 | Particle Formation - A process for producing particles of a substance is described wherein a solution of the substance in a solvent is delivered in at least one shot into a supercritical fluid. The supercritical fluid is a non-solvent for the substance and is miscible with the solvent. Particles of the substance distributed in a mixture of the solvent and the supercritical fluid are formed. | 06-10-2010 |
Vincent Sih, Singapore SG
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20110006349 | FIELD EFFECT TRANSISTOR HAVING CHANNEL SILICON GERMANIUM - Field effect transistors and methods of making field effect transistors are provided. The field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a silicon germanium layer in a trench at an upper surface of the semiconductor substrate between the shallow trench isolations; a gate feature on the silicon germanium layer; and metal silicides on the upper potions of silicon germanium layer and semiconductor substrate that are not covered by the gate feature. The silicon germanium layer has a bottom surface and a top surface having a (100) plane and side surfaces having two or more planes. | 01-13-2011 |
Vincent Sih, Dresden DE
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20140248770 | MICROWAVE-ASSISTED HEATING OF STRONG ACID SOLUTION TO REMOVE NICKEL PLATINUM/PLATINUM RESIDUES - A method is provided for removing residual Ni/Pt and/or Pt from a semiconductor substrate in a post salicidation cleaning process using microwave heating of a stripping solution. Embodiments include depositing a Ni/Pt layer on a semiconductor substrate; annealing the deposited Ni/Pt layer, forming a nickel/platinum silicide and residual Ni/Pt and/or Pt; removing the residual Ni/Pt and/or Pt from the semiconductor substrate by: microwave heating a strong acid solution in a non-reactive container; exposing the residual Ni/Pt and/or Pt to the microwave heated strong acid solution; and rinsing the semiconductor substrate with water H | 09-04-2014 |