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| 20090029079 | Nylon Food Casing - Tubular, biaxially stretched, heat shrinkable seven layer film food casings comprising inner polyamide layer and two outer polyamide or functional group modified polyolefin layers on either side of core layers of EVOH and polyethylene, having two adhesive layers, and a coextrusion process for making the film. | 01-29-2009 |
| 20100007043 | Multi-Tube Extrusion Apparatus and Method - A method and apparatus for producing a plurality of bi-oriented, heat-shrinkable thermoplastic tubular films is disclosed. Thermoplastic resin is extruded through a plurality of annular dies to form a plurality of molten plastic tubes. The tubes are cooled and solidified and sent through a plurality of pinch rollers to stretch the tubes simultaneously in a machine and transverse direction, creating a plurality of tubular films. The films are cooled and heated, and then relaxed simultaneously in a machine and transverse direction. Winding rollers then wind up the finished tubular films. | 01-14-2010 |
| 20110027404 | MULTI-TUBE EXTRUSION APPARATUS AND METHOD - A method and apparatus for producing a plurality of bi-oriented, heat-shrinkable thermoplastic tubular films is disclosed. Thermoplastic resin is extruded through a plurality of annular dies to form a plurality of molten plastic tubes. The tubes are cooled and solidified and sent through a plurality of pinch rollers to stretch the tubes simultaneously in a machine and transverse direction, creating a plurality of tubular films. The films are cooled and heated, and then relaxed simultaneously in a machine and transverse direction. Winding rollers then wind up the finished tubular films. | 02-03-2011 |
| 20140322394 | SMOKABLE THERMOPLASTIC CASING - A novel smokable thermoplastic film, smokable by both liquid smoke and gaseous smoke, that may be produced as a film or a tube, as in a food casing. This newly disclosed film is a blend of a polyamide base, an amorphous polyvinyl alcohol and, optionally, an antiblocking agent. | 10-30-2014 |
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| 20130318589 | COMPUTERIZED METHOD AND SYSTEM FOR MANAGING SECURE CONTENT SHARING IN A NETWORKED SECURE COLLABORATIVE EXCHANGE ENVIRONMENT - In embodiments of the present invention improved capabilities are described for securely sharing computer data content that allows for the secure un-sharing of the content. The facility to un-share content may be implemented through a secure exchange server, where the content is being shared along with a secure protection feature that when altered results in the un-sharing of the content. This secure un-sharing facility may be used to securely share content beyond the secure protective facilities of an enterprise, out to users in other companies, into the public space, to users not intended to get the content, and the like, where the sender maintains control to access of the content no matter where or to who the content has been distributed. In this way, the secure sharing of content is made to be easy across corporate boundaries at the user level and at the individual document level. | 11-28-2013 |
| 20140304836 | DIGITAL RIGHTS MANAGEMENT THROUGH VIRTUAL CONTAINER PARTITIONING - In embodiments of the present invention improved capabilities are described for securely sharing documents among users within separate business entities, comprising providing a virtual container control facility, on a computing device with an operating system, and at least one virtual container where commands from the operating system for saving, copying, and printing of computer files are restricted for users other than unrestricted users; storing by a first unrestricted user of a first business entity a computer file in the virtual container; granting access permission by the first unrestricted user to view and edit the computer file by a restricted user of a second business entity; and receiving editing of the computer file by the restricted user, the editing creating an edited computer file within the virtual container that is accessible by the unrestricted user. | 10-09-2014 |
| 20150163206 | CUSTOMIZABLE SECURE DATA EXCHANGE ENVIRONMENT - In embodiments, the disclosure provides a secure data exchange system that includes a data management facility; and a plurality of data storage nodes. The data management facility manages content sharing between entities of data stored in the data storage nodes, wherein the data is stored by a user of a first entity and comprises content and metadata. The data management facility only has access to the metadata of the user data for managing of the data in the plurality of data storage nodes and not the content. The data management facility may be geographically distributed at a plurality of data management sites and the data storage nodes may exist inside and outside of a firewall of the first entity. | 06-11-2015 |
| 20150222625 | COMPUTERIZED METHOD AND SYSTEM FOR MANAGING SECURE CONTENT SHARING IN A NETWORKED SECURE COLLABORATIVE EXCHANGE ENVIRONMENT WITH CUSTOMER MANAGED KEYS - In embodiments of the present invention, improved capabilities are described for securely sharing computer data content between business entities as managed through an intermediate business entity, where the secure sharing process utilizes encryption provided by the intermediate business entity but where the encryption keys used in the encryption are at least in part managed through one of the business entities as customer managed keys. | 08-06-2015 |
| 20150310188 | SYSTEMS AND METHODS OF SECURE DATA EXCHANGE - In embodiments of the present invention improved capabilities are described for managing digital rights management (DRM) protected content sharing in a networked secure collaborative computer data exchange environment through a secure exchange facility managed by an intermediate organizational entity amongst users of a plurality of other organizational entities, wherein computer data content and access rights for the computer data content is shared between a first and second user, the computer data content and access rights for the computer data content are transformed into a DRM protected computer data content through communications with a DRM engine, wherein the DRM engine is selected based on a content type of the computer data content, and the DRM engine is provided by an entity other than the intermediate organizational entity and other than any of the plurality of other organizational entities. | 10-29-2015 |
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| 20090047870 | Reverse Shallow Trench Isolation Process - A method of polishing a substrate surface containing silicon nitride and silicon oxide or silicon dioxide, comprising movably contacting the surface with a polishing pad and having a polishing composition disposed between the polishing pad and the surface, said polishing composition comprising 1) hydrous ceria abrasive; 2) polyvinylpyridine, vinyl pyridine copolymers, or both, and 3) water, wherein at 2 psi downpressure the silicon nitride removal rate is at least 500 angstroms per minute and the selectivity of silicon nitride to silicon oxide is at least 30. | 02-19-2009 |
| 20090057661 | Method for Chemical Mechanical Planarization of Chalcogenide Materials - A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing. | 03-05-2009 |
| 20090250656 | Free Radical-Forming Activator Attached to Solid and Used to Enhance CMP Formulations - A chemical mechanical polishing composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer. | 10-08-2009 |
| 20090261291 | Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid and Per-Compound Oxidizing Agents, and Associated Method for Use - A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes). | 10-22-2009 |
| 20090308836 | DIHYDROXY ENOL COMPOUNDS USED IN CHEMICAL MECHANICAL POLISHING COMPOSITIONS HAVING METAL ION OXIDIZERS - A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both. | 12-17-2009 |
| 20110165777 | Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing - A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films. | 07-07-2011 |
| 20110252970 | Filtration Media for High Humidity Environments - The invention is directed to a nanofiber that contains at least one moisture sensitive polymer. The fiber also contains nanoparticles of a hydrogen bonding material incorporated into the body of the fiber. The hydrogen bonding material is present in an amount corresponding to greater than 2% of the polymer weight and the nanofiber has a mean fiber diameter measured along its length of less than one micron. Also included are filter media made from nanowebs of the fiber. | 10-20-2011 |
| 20140120431 | COMPOSITE POLYMER ELECTROLYTE MEMBRANE - Disclosed are composite polymeric ion exchange membranes and processes for their production and use in electrochemical cells, wherein ion exchange polymers are impregnated into non-consolidated nanowebs. | 05-01-2014 |
| 20140120455 | STABLE PROTON EXCHANGE MEMBRANES AND MEMBRANE ELECTRODE ASSEMBLIES - A proton exchange membrane and a membrane electrode assembly for an electrochemical cell such as a fuel cell are provided. A catalytically active component is disposed within the membrane electrode assembly. The catalytically active component comprises particles containing a metal oxide such as silica, metal or metalloid ions such as ions that include boron, and a catalyst. A process for increasing peroxide radical resistance in a membrane electrode is also provided that includes the introduction of the catalytically active component described into a membrane electrode assembly. | 05-01-2014 |
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| 20110195752 | Moveable Housing of a Mobile Communications Device - Mobile communications devices having moveable housings are described. In an implementation, a mobile communications device includes a first housing that includes a display device; and a second housing that includes a keyboard. At least one of the first or second housings are moveable between a first configuration in which the first housing substantially covers the second housing so the keyboard is covered and the display device is viewable and a second configuration in which the keyboard is exposed and positioned such that an outer plane of the keyboard is positioned in a substantially similar plane to that of an outer surface of the display device. | 08-11-2011 |
| 20130229100 | Device Kickstand - A device kickstand is described. In at least some implementations, a kickstand is rotatably attached to a mobile computing device. The kickstand can be rotated to various positions to provide support for different orientations of the computing device. In at least some implementations, hinges are employed to attach a kickstand to a mobile computing device. One example hinge utilizes preset hinge stops that enable the kickstand to be placed at different preset positions. Another example hinge exerts pressure on an edge of the kickstand, providing stability and vibration dampening to the kickstand. | 09-05-2013 |
| 20130229534 | Device Camera Angle - Techniques for device camera angle are described. In one or more implementations, a camera is mounted in a computing device at an angle based on an orientation of the computing device. For example, when the computing device is positioned on a surface and at an angle to the surface (such as when supported by a kickstand), the mounting angle of the camera is such that an optical axis of the camera points forward, and not towards the surface. In at least some implementations, a computing device includes a camera that is physically adjustable to support different orientations of the computing device. In at least some implementations, images that are captured via a camera on a computing device can be manipulated based on an orientation of the computing device. | 09-05-2013 |
| 20130229773 | Device Kickstand - A device kickstand is described. In at least some implementations, a kickstand is rotatably attached to a mobile computing device. The kickstand can be rotated to various positions to provide support for different orientations of the computing device. In at least some implementations, hinges are employed to attach a kickstand to a mobile computing device. One example hinge utilizes preset hinge stops that enable the kickstand to be placed at different preset positions. Another example hinge exerts pressure on an edge of the kickstand, providing stability and vibration dampening to the kickstand. | 09-05-2013 |
| 20140293534 | Hinge Mechanism for Rotatable Component Attachment - A hinge mechanism for rotatable component attachment is described. In at least some implementations, the hinge mechanism enables a support component to be adjustably attached to an apparatus, such as a computing device. For example, the hinge mechanism can be employed to rotatably attach a kickstand to a mobile computing device. The kickstand can be rotated via the hinge mechanism to various positions to provide support for different orientations of the computing device. For example, the kickstand can be positioned to support the computing device in a typing orientation such that input can be provided via an associated input device. As another example, the kickstand can be positioned to enable viewing and/or interaction with the computing device, such as in a portrait viewing orientation. | 10-02-2014 |
| 20150091839 | Compliant Support for a Display Device - A compliant support for a display device is described. In one or more implementations, an apparatus includes an external enclosure configured to assume a mobile computing device configuration and one or more computing components secured by and disposed within the external enclosure. The one or more computing components are configured to perform one or more operations that are specified by software. A display device is secured to the external enclosure such that the display device is viewable by a user, the display device supporting touchscreen functionality. A compliant support is disposed between the one or more computing components and the display device, the compliant support configured to reduce deflection of the display device by compression of the compliant support, the deflection caused in response to contact against a surface of the display device. | 04-02-2015 |
| 20150346771 | Mounting Wedge for Flexible Material - Implementations of a mounting wedge for a flexible material are described. According to various embodiments, a flexible material such as a fabric is laminated to a surface of a device, such as a portable computing device. At least some embodiments utilize a mounting wedge to secure an edge of the flexible material to the device, as well as for a mounting surface for a component of the device. | 12-03-2015 |
| 20150346780 | Fabric Lamination to a Component - Techniques for fabric lamination to a component are described. According to various implementations, a single piece of fabric is laminated to a moveable component and to an apparatus to which the moveable component is attached. Generally, lamination of fabric to a moveable component and portions of an associated apparatus can enhance a user experience in a variety of ways. Embodiments may also be employed to cut fabric from around a surface component of an apparatus. | 12-03-2015 |
| 20150350394 | Moveable Housing of a Mobile Communications Device - Mobile communications devices having movable housings are described. In an implementation, a mobile communications device includes a first housing and a second housing. At least one of the first or second housings are movable between a first configuration in which the first housing substantially covers the second housing so that an outer surface of the second housing is covered and an outer surface of the first housing is viewable, and a second configuration in which said outer surface of the second housing is exposed and positioned such that said outer surface of the second housing is positioned in a substantially similar plane to that of said outer surface of the first housing. | 12-03-2015 |
| 20150378392 | Hinge for Component Attachment - A hinge for component attachment is described. In at least some implementations, a kickstand is rotatably attached to a mobile computing device. The kickstand can be rotated to various positions to provide support for different orientations of the computing device. In at least some implementations, hinges are employed to attach a kickstand to a mobile computing device. One example hinge utilizes preset hinge stops that enable the kickstand to be placed at different preset positions. Another example hinge exerts pressure on an edge of the kickstand, providing stability and vibration dampening to the kickstand. | 12-31-2015 |
| 20160109908 | Mobile Computing Device having a Flexible Hinge Structure - Techniques involving a mobile computing device having a flexible hinge structure are described. In one or more implementations, a mobile computing device includes a plurality of housings, a display device that is flexible, and a flexible hinge structure. The flexible hinge structure secures the plurality of housings to each other, permits the plurality of housings to rotate about an axis in relation to each other, and supports a continuous viewing area of the display device that extends across the plurality of housings and the flexible hinge structure. | 04-21-2016 |
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| 20140325072 | PREDICTING LONG-TERM COMPUTING RESOURCE USAGE - Techniques are described for performing automated predictions of program execution capacity or other capacity of computing-related hardware resources that will be used to execute software programs in the future, such as for a group of computing nodes that execute one or more programs for a user. The predictions that are performed may in at least some situations be based on historical data regarding corresponding prior actual usage of execution-related capacity (e.g., for one or more prior years), and may include long-term predictions for particular future time periods that are multiple months or years into the future. In addition, the predictions of the execution-related capacity for particular future time periods may be used in various manners, including to manage execution-related capacity at or before those future time periods, such as to prepare sufficient execution-related capacity to be available at those future time periods. | 10-30-2014 |
| 20150026348 | REACTIVE AUTO-SCALING OF CAPACITY - Examples of systems and methods are described for managing computing capacity by a provider of computing resources. The computing resources may include program execution capabilities, data storage or management capabilities, network bandwidth, etc. Multiple user programs can consume a single computing resource, and a single user program can consume multiple computing resources. Changes in usage and other environmental factors can require scaling of the computing resources to reduce or prevent a negative impact on performance. In some implementations, a fuzzy logic engine can be used to determine the appropriate adjustments to make to the computing resources associated with a program in order to keep a system metric within a desired operating range. | 01-22-2015 |
| 20150227409 | ANOMALY DETECTION SERVICE - Systems and methods are provided for analyzing operating metrics of monitored metric sources. Aspects of the present disclosure may present for display information associated with the monitored metric source and the analysis of its operating metrics. Analysis comprises determination of reference values and tolerance levels which represent allowable deviations from the reference values. Input data includes a measurement of an operating parameter and a time stamp. Input data may be saved to a data store for using in future analysis of other input data. When input data is determined to be outside the tolerance level, notifications may be issued to alert administrators or systems of the anomaly. | 08-13-2015 |
| 20150339169 | REACTIVE AUTO-SCALING OF CAPACITY - Examples of systems and methods are described for managing computing capacity by a provider of computing resources. The computing resources may include program execution capabilities, data storage or management capabilities, network bandwidth, etc. Multiple user programs can consume a single computing resource, and a single user program can consume multiple computing resources. Changes in usage and other environmental factors can require scaling of the computing resources to reduce or prevent a negative impact on performance. In some implementations, a fuzzy logic engine can be used to determine the appropriate adjustments to make to the computing resources associated with a program in order to keep a system metric within a desired operating range. | 11-26-2015 |
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| 20090001592 | METAL INTERCONNECT FORMING METHODS AND IC CHIP INCLUDING METAL INTERCONNECT - Methods of forming a metal interconnect and an IC chip including the metal interconnect are disclosed. One embodiment of the method may include providing an integrated circuit (IC) chip up to and including a middle of line (MOL) layer, the MOL layer including a contact positioned within a first dielectric; recessing the first dielectric such that the contact extends beyond an upper surface of the first dielectric; forming a second dielectric over the first dielectric such that the second dielectric surrounds at least a portion of the contact, the second dielectric having a lower dielectric constant than the first dielectric; forming a planarizing layer over the second dielectric; forming an opening through the planarizing layer and into the second dielectric to the contact; and forming a metal in the opening to form the metal interconnect. | 01-01-2009 |
| 20090117360 | SELF-ASSEMBLED MATERIAL PATTERN TRANSFER CONTRAST ENHANCEMENT - A non-photosensitive polymeric resist containing at least two immiscible polymeric block components is deposited on the planar surface. The non-photosensitive polymeric resist is annealed to allow phase separation of immiscible components and developed to remove at least one of the at least two polymeric block components. Nanoscale features, i.e., features of nanometer scale, including at least one recessed region having a nanoscale dimension is formed in the polymeric resist. The top surface of the polymeric resist is modified for enhanced etch resistance by an exposure to an energetic beam, which allows the top surface of the patterned polymeric resist to become more resistant to etching processes and chemistries. The enhanced ratio of etch resistance between the two types of surfaces provides improved image contrast and fidelity between areas having the top surface and the at least one recessed region. | 05-07-2009 |
| 20100123205 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 05-20-2010 |
| 20100133694 | METAL INTERCONNECT AND IC CHIP INCLUDING METAL INTERCONNECT - A metal interconnect and an IC chip including the metal interconnect are disclosed. One embodiment of the method may include providing an integrated circuit (IC) chip up to and including a middle of line (MOL) layer, the MOL layer including a contact positioned within a first dielectric; recessing the first dielectric such that the contact extends beyond an upper surface of the first dielectric; forming a second dielectric over the first dielectric such that the second dielectric surrounds at least a portion of the contact, the second dielectric having a lower dielectric constant than the first dielectric; forming a planarizing layer over the second dielectric; forming an opening through the planarizing layer and into the second dielectric to the contact; and forming a metal in the opening to form the metal interconnect. | 06-03-2010 |
| 20110298017 | REPLACEMENT GATE MOSFET WITH SELF-ALIGNED DIFFUSION CONTACT - A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by removal of a disposable gate stack. The replacement gate stack is subsequently recessed, and a dielectric gate cap having sidewalls that are vertically coincident with outer sidewalls of the gate spacer is formed by filling the recess over the replacement gate stack. An anisotropic etch removes the dielectric material of the planarization layer selective to the material of the dielectric gate cap, thereby forming at least one via cavity having sidewalls that coincide with a portion of the sidewalls of the gate spacer. A portion of each diffusion contact formed by filling the at least one via cavity overlies a portion of the gate spacer and protrudes into the dielectric gate cap. | 12-08-2011 |
| 20110298061 | STRUCTURE AND METHOD FOR REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIAL MANDREL DIELECTRIC - The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region. | 12-08-2011 |
| 20120171818 | HYBRID BONDING INTERFACE FOR 3-DIMENSIONAL CHIP INTEGRATION - Each of a first substrate and a second substrate includes a surface having a diffusion resistant dielectric material such as silicon nitride. Recessed regions are formed in the diffusion resistant dielectric material and filled with a bondable dielectric material. The patterns of the metal pads and bondable dielectric material portions in the first and second substrates can have a mirror symmetry. The first and second substrates are brought into physical contact and bonded employing contacts between metal pads and contacts between the bondable dielectric material portions. Through-substrate-via (TSV) structures are formed through bonded dielectric material portions. The interface between each pair of bonded dielectric material portions located around a TSV structure is encapsulated by two diffusion resistant dielectric material layers so that diffusion of metal at a bonding interface is contained within each pair of bonded dielectric material portions. | 07-05-2012 |
| 20120181616 | STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY - A complementary metal oxide semiconductor (CMOS) structure including a scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) which do not exhibit an increased threshold voltage and reduced mobility during operation is provided Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. In some embodiments, the pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack is also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N | 07-19-2012 |
| 20120305989 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 12-06-2012 |
| 20120309153 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 12-06-2012 |
| 20120329230 | FABRICATION OF SILICON OXIDE AND OXYNITRIDE HAVING SUB-NANOMETER THICKNESS - A method of fabricating a silicon-containing oxide layer that includes providing a chemical oxide layer on a surface of a semiconductor substrate, removing the chemical oxide layer in an oxygen-free environment at a temperature of 1000° C. or greater to provide a bare surface of the semiconductor substrate, and introducing an oxygen-containing gas at a flow rate to the bare surface of the semiconductor substrate for a first time period at the temperature of 1000° C. The temperature is then reduced to room temperature during a second time period while maintaining the flow rate of the oxygen containing gas to provide a silicon-containing oxide layer having a thickness ranging from 0.5 Å to 10 Å. | 12-27-2012 |
| 20130126986 | GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND HIGH-K GATE DIELECTRIC ON GERMANIUM CONTAINING CHANNEL FOR CMOS DEVICES - A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region. | 05-23-2013 |
| 20130143377 | STRUCTURE AND METHOD FOR REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIAL MANDREL DIELECTRIC - The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region. | 06-06-2013 |
| 20130187239 | STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY - A complementary metal oxide semiconductor structure including a scaled nFET and a scaled pFET which do not exhibit an increased threshold voltage and reduced mobility during operation is provided. The method includes forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. The pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack can also be plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion contains up to 15 atomic % N | 07-25-2013 |
| 20130330843 | METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STACKS IN SEMICONDUCTOR DEVICES AND RELATED DESIGN STRUCTURE - A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH | 12-12-2013 |
| 20140001570 | COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE | 01-02-2014 |
| 20140001575 | SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES | 01-02-2014 |
| 20140042546 | STRUCTURE AND METHOD TO FORM INPUT/OUTPUT DEVICES - A limited number of cycles of atomic layer deposition (ALD) of Hi-K material followed by deposition of an interlayer dielectric and application of further Hi-K material and optional but preferred annealing provides increased Hi-K material content and increased breakdown voltage for input/output (I/O) transistors compared with logic transistors formed on the same chip or wafer while providing scalability of the inversion layer of the I/O and logic transistors without significantly compromising performance or bias temperature instability (BTI) parameters. | 02-13-2014 |
| 20140061819 | GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND HIGH-K GATE DIELECTRIC ON GERMANIUM CONTAINING CHANNEL FOR CMOS DEVICES - A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region. | 03-06-2014 |
| 20140170844 | STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY - A complementary metal oxide semiconductor (CMOS) structure including a scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) is provided. Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. The pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack may also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N | 06-19-2014 |
| 20140252503 | MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC - A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process. The first silicon oxide material is converted into a first silicon oxynitride material by a first plasma nitridation process. A second silicon oxide material is subsequently deposited by a second atomic layer deposition process. The second silicon oxide material is converted into a second silicon oxynitride material by a second plasma nitridation process. Multiple repetitions of the atomic layer deposition process and the plasma nitridation process provides a silicon oxynitride material having a ratio of nitrogen atoms to oxygen atoms greater than 1/3, which can be advantageously employed to reduce the leakage current through a gate dielectric. | 09-11-2014 |
| 20150179459 | MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC - A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process. The first silicon oxide material is converted into a first silicon oxynitride material by a first plasma nitridation process. A second silicon oxide material is subsequently deposited by a second atomic layer deposition process. The second silicon oxide material is converted into a second silicon oxynitride material by a second plasma nitridation process. Multiple repetitions of the atomic layer deposition process and the plasma nitridation process provides a silicon oxynitride material having a ratio of nitrogen atoms to oxygen atoms greater than ⅓, which can be advantageously employed to reduce the leakage current through a gate dielectric. | 06-25-2015 |
| 20150187901 | MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC - A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process. The first silicon oxide material is converted into a first silicon oxynitride material by a first plasma nitridation process. A second silicon oxide material is subsequently deposited by a second atomic layer deposition process. The second silicon oxide material is converted into a second silicon oxynitride material by a second plasma nitridation process. Multiple repetitions of the atomic layer deposition process and the plasma nitridation process provides a silicon oxynitride material having a ratio of nitrogen atoms to oxygen atoms greater than 1/3, which can be advantageously employed to reduce the leakage current through a gate dielectric. | 07-02-2015 |
| 20150228747 | MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFECT TRANSISTORS - After removal of the disposable gate structures to form gate cavities in a planarization dielectric layer, a silicon oxide layer is conformally deposited on silicon-oxide-based gate dielectric portions in the gate cavities. A portion of the silicon oxide layer can be nitridated to form a silicon oxynitride layer. A patterned masking material layer can be employed to physically expose a semiconductor surface from a first-type gate cavity. The silicon oxide layer can be removed while preserving an underlying silicon-oxide-based gate dielectric portion in a second-type gate cavity. A stack of a silicon oxynitride layer and an underlying silicon-oxide-based gate dielectric can be protected by a patterned masking material layer in a third-type gate cavity during removal of the silicon oxide layer in the second-type gate cavity. A high dielectric constant gate dielectric layer can be formed in the gate cavities to provide gate dielectrics of different types. | 08-13-2015 |
| 20160027893 | MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFECT TRANSISTORS - After removal of the disposable gate structures to form gate cavities in a planarization dielectric layer, a silicon oxide layer is conformally deposited on silicon-oxide-based gate dielectric portions in the gate cavities. A portion of the silicon oxide layer can be nitridated to form a silicon oxynitride layer. A patterned masking material layer can be employed to physically expose a semiconductor surface from a first-type gate cavity. The silicon oxide layer can be removed while preserving an underlying silicon-oxide-based gate dielectric portion in a second-type gate cavity. A stack of a silicon oxynitride layer and an underlying silicon-oxide-based gate dielectric can be protected by a patterned masking material layer in a third-type gate cavity during removal of the silicon oxide layer in the second-type gate cavity. A high dielectric constant gate dielectric layer can be formed in the gate cavities to provide gate dielectrics of different types. | 01-28-2016 |
| Patent application number | Description | Published |
|---|
| 20100180983 | FUELING SYSTEM AND METHOD - A fuel storage system includes a fuel tank, a fueling receptacle in fluid communication with the tank, and a coil adjacent the fueling receptacle. The system also includes a controller configured to determine information about a state of fuel in the tank, and to cause a modulated current to be driven into the coil to generate an electromagnetic field. The modulated current represents the information about the state of fuel in the tank. | 07-22-2010 |
| 20100206887 | FUEL STORAGE SYSTEM AND METHOD FOR DETECTING A GAS PRESSURE THEREIN - A fuel storage system includes a storage vessel including a dielectric liner, a voltage sensor formed by a pair of plates disposed on opposing surfaces of the liner, and a controller configured to determine a gas pressure in the storage vessel based on voltages measured by the sensor. | 08-19-2010 |
| 20110139130 | Automotive Fuel System Leak Testing - Systems and methods for performing leak testing on fuel system components in hybrid vehicles during engine-off operating conditions are disclosed. For example, a fuel tank may include a pressure accumulator which may be filled with fuel via a fuel pump in order to generate a vacuum which may be used to diagnose leaks in the fuel system. | 06-16-2011 |
| 20110168705 | FUEL FILLER SYSTEM FOR AUTOMOTIVE VEHICLE - A fuel filler system for an automotive vehicle includes a filler pipe connected with a fuel tank and an interceptor mounted about an open end of the filler pipe, with the interceptor and filler pipe defining a generally annular contaminant collector having a drain extending from the collector. A filler cap closes both the open end of the filler pipe and the open end of the interceptor, so as to prevent ambient contamination from entering either the contaminant collector or the filler pipe. Removal of the filler cap from the filler pipe first causes venting of the fuel tank into the collector before a sealing condition between the filler cap and the interceptor is released. | 07-14-2011 |
| 20110192477 | PASSIVE-SIPHONING SYSTEM AND METHOD - A system for a vehicle is provided. The system may include a fuel tank including a first and a second interior region at least partially separated from each other. The system may further include a fuel pump including a pick-up positioned in only the first region and a passive-siphoning subsystem with a crossover-siphoning conduit communicating between the first and second regions, the conduit enclosing a wicking element. | 08-11-2011 |
| 20140183192 | Vehicle Fueling Apparatus - A capless nozzle for a vehicle fuel filler canal, includes a conical portion; and a non-conical portion having a stop formed therein configured to limit travel of a filler pipe in one direction when the pipe is inserted in the filler canal. | 07-03-2014 |
| 20150345435 | SYSTEM AND METHODS FOR MANAGING FUEL VAPOR CANISTER TEMPERATURE - A system for an engine, comprising: a fuel vapor canister coupled to a fuel tank; a thermal jacket comprising a phase-change material, the thermal jacket spatially sheathing the fuel vapor canister; and an engine coolant passage positioned to transfer thermal energy between engine coolant and the phase-change material. In this way, the phase-change material may buffer the temperature of the fuel vapor canister by absorbing heat generated during hydrocarbon adsorption, and returning the heat to the vapor canister during hydrocarbon desorption. By coupling the phase-change material to engine coolant, the thermal capacity of the thermal jacket can be increased, as heated coolant can thus transfer thermal energy to the phase-change material to replace the thermal energy transferred to the canister during hydrocarbon desorption. | 12-03-2015 |
| 20150345436 | SYSTEM AND METHODS FOR MANAGING FUEL TANK TEMPERATURE - A system for an engine, comprising: a fuel tank; a thermal regulator comprising a phase-change material, the thermal regulator coupled to the fuel tank; and an engine coolant passage positioned to transfer thermal energy between engine coolant and the phase-change material. In this way, the temperature of the fuel tank may be managed passively by the phase-change material, and actively by engine coolant, thereby allowing heat energy to be shunted away from the fuel tank, cooling the fuel within the fuel tank, and reducing fuel vapor concentration, thus enabling a fuel vapor canister with a reduced size. | 12-03-2015 |
