Shunsuke Yamamoto
Shunsuke Yamamoto, Hitachi-Shi JP
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20100295055 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - To improve an adhesion to a substrate holder, and improve a device production yield by uniformizing a temperature distribution in a surface of a substrate and uniformizing characteristics such as a film thickness. When a concave warpage is set to be negative on a substrate front side, and a convex warpage is set to be positive on the substrate front side, then a line segment is drawn from one end of a substrate rear surface to the other end of the substrate rear surface, passing through a substrate center line, and a substrate is sliced by this line segment in a substrate thickness direction, a maximum value of shortest values of a distance from an arbitrary point on the drawn line segment to a rear side outline in a sliced surface, is defined as warpage H in a diameter direction, and when the warpage H in the diameter direction is obtained in a substrate peripheral direction, with its maximum value set to be Hmax, and its minimum value set to be Hmin, the warpage H in the diameter direction is defined to satisfy Hmax−Hmin≦30 μm. | 11-25-2010 |
Shunsuke Yamamoto, Hitachi JP
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20090050915 | Group III-V nitride semiconductor substrate and method for producing same - A group III-V nitride semiconductor substrate includes a first region of group III-V nitride semiconductor crystal grown on a facet on a heterosubstrate, and a second region of the group III-V nitride semiconductor crystal grown on a plane with a predetermined plane orientation on the heterosubstrate. The first region has an area ratio of not more than 10% to the second region in a plane of the substrate. A method for producing a group III-V nitride semiconductor substrate includes a first crystal growth step of supplying a source gas of a group III-V nitride semiconductor onto a heterosubstrate at a first partial pressure to grow the group III-V nitride semiconductor on a plane with a predetermined plane orientation and a facet on the heterosubstrate, and a second crystal growth step of supplying onto the heterosubstrate the source gas at a second partial pressure higher than the first partial pressure to grow the semiconductor on the plane with the predetermined plane orientation and the facet after the first crystal growth step is conduced for a predetermined time period so as to suppress a crystal growth of the semiconductor on the facet. | 02-26-2009 |
Shunsuke Yamamoto, Okazaki-Shi JP
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20110234659 | DROPLET EJECTION DEVICE THAT ADJUSTS INK EJECTION AMOUNT - A droplet ejection device includes a first determining unit that determines a first amount of liquid on an image pixel basis based on both a second amount and an ejection pattern both obtained from image data, actuator that ejects the first amount of the liquid, a second determining unit that determines a third amount of treating agent on an image pixel basis based on a difference between the first and second amounts, such that a density of the liquid corresponding to a combination of the first amount of the liquid and the third amount of the treating agent comes closer to a density of the liquid corresponding to the second amount of the liquid when there is a difference between the first and second amounts, and a treating-agent application member that applies the third amount of the treating agent to a recording medium. | 09-29-2011 |
20120075657 | IMAGE RECORDING APPARATUS - An image recording apparatus, including: a recording device; discharge trays; a discharge mechanism; detectors; an input device through which is inputted authentication information relating to image data; and a controller including: an image-data reception portion; an authentication-information confirming portion to make a confirmation as to whether the authentication information contains specific information; a confirmation-necessity judging portion to judge whether the confirmation by the confirming portion with respect to the image data is necessary; a selecting portion to select one discharge tray on which the recording medium is not placed, wherein, where the judging portion judges that the confirmation is necessary, the controller permits selection of the one discharge tray, controls the recording device to record the image based on the image data after the confirmation that the authentication information contains the specific information, and controls the discharge mechanism to discharge, to the selected one discharge tray, the image-recorded recording medium. | 03-29-2012 |
Shunsuke Yamamoto, Tokyo JP
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20120006675 | FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS - The invention reduces generation of particles. An embodiment of the preset invention includes a target holder ( | 01-12-2012 |
20130149526 | METHOD OF PRODUCING COLD-ROLLED STEEL SHEET AS WELL AS COLD-ROLLED STEEL SHEET AND MEMBERS FOR AUTOMOBILE - In a method of producing a cold-rolled steel sheet being excellent in not only the phosphate treatability but also the corrosion resistance after coating under severe corrosion environment such as hot salt water immersion test or composite cycle corrosion test, a continuously annealed steel sheet after cold rolling preferably including 0.5-3.0 mass % of Si is pickled to remove a Si-containing oxide layer on a surface layer of the steel sheet and further repickled so that a surface covering ratio of an iron-based oxide on the surface of the steel sheet is not more than 40% and preferably a maximum thickness of the iron-based oxide is not more than 150 nm, as well as a cold-rolled steel sheet produced by this method and a member for automobile using the cold-rolled steel sheet. | 06-13-2013 |
20130149529 | METHOD OF PRODUCING COLD-ROLLED STEEL SHEET AS WELL AS COLD-ROLLED STEEL SHEET AND MEMBERS FOR AUTOMOBILE - In a method of producing a cold-rolled steel sheet being excellent in not only the phosphate treatability but also the corrosion resistance after coating under severe corrosion environment such as hot salt water immersion test or composite cycle corrosion test, a continuously annealed steel sheet after cold rolling is pickled with a mixture of nitric acid and hydrochloric acid having a nitric acid concentration of more than 100 g/L but not more than 200 g/L and a ratio R (HCl/HNO | 06-13-2013 |
Shunsuke Yamamoto, Mito JP
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20130230447 | GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME - A gallium nitride substrate that a GaLα/CKα peak intensity ratio in EDX spectrum is not less than 2. The EDX spectrum is obtained in energy dispersive X-ray microanalysis (EDX) of a surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. | 09-05-2013 |
20130248820 | GALLIUM NITRIDE SUBSTRATE AND EPITAXIAL WAFER - A gallium nitride substrate includes a plurality of physical level differences in a surface thereof. All the physical level differences existing in the surface have a dimension of not more than 4 μm. A relationship of (H−L)/H×100≦80 is satisfied in all the physical level differences, where H represents a higher value of cathodoluminescence emission intensities of a wavelength corresponding to a bandgap of the gallium nitride substrate, and L represents a lower value of the cathodoluminescence emission intensities, the cathodoluminescence emission intensities being measured in an upper step and a lower step of the physical level difference. | 09-26-2013 |
Shunsuke Yamamoto, Kawasaki-Shi JP
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20150053547 | FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS - The invention reduces generation of particles. An embodiment of the preset invention includes a target holder ( | 02-26-2015 |
Shunsuke Yamamoto, Chiryu-Shi JP
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20160069279 | CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE - A control device for an internal combustion engine includes a controller. The controller controls the relative rotation phase of the exhaust camshaft in accordance with the relative rotation phase of the intake camshaft. When a request for locking the relative rotation phase of the intake camshaft at an intermediate phase is generated, the controller controls the relative rotation phase of the exhaust camshaft such that the relative rotation phase of the exhaust camshaft is changed to a phase corresponding to the intermediate phase independently from the relative rotation phase of the intake camshaft. | 03-10-2016 |