Patent application number | Description | Published |
20080212359 | Memory Device and Semiconductor Integrated Circuit - First electrode layer includes a plurality of first electrode lines (W | 09-04-2008 |
20080259678 | Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor - An initialization method of the present invention is a method for initializing a material (variable-resistance material) ( | 10-23-2008 |
20090067214 | Electric element, memory device, and semiconductor integrated circuit - An electric element includes a first terminal ( | 03-12-2009 |
20090067215 | Electric element, memory device, and semiconductor integrated circuit - An electric element comprises: a first electrode ( | 03-12-2009 |
20090079009 | MEMORY DEVICE, MEMORY CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VARIABLE RESISTANCE - A first variable resistor ( | 03-26-2009 |
20090250678 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE ELEMENT ARRAY - A nonvolatile memory apparatus comprises a first electrode ( | 10-08-2009 |
20090283736 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 11-19-2009 |
20090321709 | MEMORY ELEMENT, MEMORY APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - A memory element comprises a first electrode, a second electrode, and a resistance variable film | 12-31-2009 |
20100002490 | ELECTRIC ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT - An electric element includes: a first electrode; a second electrode; and a variable-resistance film connected between the first electrode and the second electrode. The variable-resistance film includes Fe | 01-07-2010 |
20100008127 | RESISTANCE VARIABLE ELEMENT AND RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable element of the present invention and a resistance variable memory apparatus using the resistance variable element are a resistance variable element ( | 01-14-2010 |
20100027320 | RESISTANCE VARIABLE ELEMENT, RESISTANCE VARIABLE MEMORY APPARATUS, AND RESISTANCE VARIABLE APPARATUS - A resistance variable element ( | 02-04-2010 |
20100177555 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 07-15-2010 |
20100182821 | MEMORY DEVICE, MEMORY CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VARIABLE RESISTANCE - A first variable resistor ( | 07-22-2010 |
20100207094 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 08-19-2010 |
20100232204 | RESISTANCE VARIABLE ELEMENT, NONVOLATILE SWITCHING ELEMENT, AND RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable element comprises a first electrode ( | 09-16-2010 |
20100271859 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS, AND READING METHOD AND WRITING METHOD THEREFOR - A nonvolatile memory element ( | 10-28-2010 |
20100271860 | DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT, INITIALIZATION METHOD OF VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE STORAGE DEVICE - A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧ | 10-28-2010 |
20100321982 | NONVOLATILE STORAGE DEVICE AND METHOD FOR WRITING INTO THE SAME - To provide a nonvolatile storage device ( | 12-23-2010 |
20110002158 | METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND VARIABLE RESISTANCE MEMORY DEVICE USING THE SAME - A method of programming a variable resistance element to be operated with stability and at a high speed is provided. The method programs a nonvolatile variable resistance element ( | 01-06-2011 |
20110007553 | NONVOLATILE STORAGE DEVICE AND METHOD FOR WRITING INTO MEMORY CELL OF THE SAME - Provided is a nonvolatile storage device ( | 01-13-2011 |
20110031465 | RESISTANCE VARIABLE ELEMENT AND MANUFACTURING METHOD THEREOF - A resistance variable element of the present invention comprises a first electrode ( | 02-10-2011 |
20110044088 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL - A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate ( | 02-24-2011 |
20110051500 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - Provided is a nonvolatile memory element which is capable of performing a stable resistance change operation at a low breakdown voltage. | 03-03-2011 |
20110080770 | METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE - Applying a writing voltage pulse having a first polarity to a metal oxide layer ( | 04-07-2011 |
20110110144 | WRITING METHOD FOR VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE - A writing method optimum for a variable resistance element which can maximize an operation window of the variable resistance element is provided. The writing method is performed for a variable resistance element that reversibly changes between a high resistance state and a low resistance state depending on a polarity of an applied voltage pulse. The writing method includes a preparation step (S | 05-12-2011 |
20110122680 | VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE - A nonvolatile resistance variable memory device ( | 05-26-2011 |
20110128773 | NONVOLATILE VARIABLE RESISTANCE MEMORY ELEMENT WRITING METHOD, AND NONVOLATILE VARIABLE RESISTANCE MEMORY DEVICE - To provide a variable resistance element writing method that, even when a variable resistance element has a possibility of becoming a half LR state, can ensure a maximum resistance change window by correcting the variable resistance element to a normal low resistance state. In a method of writing data to a variable resistance element ( | 06-02-2011 |
20110128776 | NONVOLATILE MEMORY DEVICE AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY DEVICE - A resistance variable layer has a characteristic in which the resistance variable layer changes to a second resistance state (RL) in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a first voltage (V | 06-02-2011 |
20110182109 | VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD FOR SAME - A variable resistance nonvolatile memory device ( | 07-28-2011 |
20110294259 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 12-01-2011 |
20120044749 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL - A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate ( | 02-23-2012 |
20120074369 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY ELEMENT ARRAY - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 003-29-2012 | |
20120074375 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 03-29-2012 |
20120120712 | FORMING METHOD FOR VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE - An optimum forming method of performing a forming for a variable resistance element to maximize an operation window of the variable resistance element is provided. The forming method is used to initialize a variable resistance element ( | 05-17-2012 |
20120230085 | FORMING METHOD OF PERFORMING FORMING ON VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE - In forming, an automatic forming circuit ( | 09-13-2012 |
20120235111 | NONVOLATILE MEMORY ELEMENT HAVING A TANTALUM OXIDE VARIABLE RESISTANCE LAYER - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 009-20-2012 | |
20120281453 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 11-08-2012 |
20120320661 | METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE - A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing voltage pulse different from the first polarity to the metal oxide layer to change its resistance state from low to high into an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer before first application of the writing voltage pulse, to change an initial resistance value of the metal oxide layer. R | 12-20-2012 |
20120327702 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element includes: a first electrode layer; a second electrode layer; and a variable resistance layer which is placed between the electrode layers, and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrode layers. The variable resistance layer is formed by stacking a first oxide layer including an oxide of a first transition metal and a second oxide layer including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer is larger than a dielectric constant of the first oxide layer; and (2) a band gap of the second oxide layer is smaller than a band gap of the first oxide layer. | 12-27-2012 |
20130003439 | NONVOLATILE VARIABLE RESISTANCE MEMORY ELEMENT WRITING METHOD, AND NONVOLATILE VARIABLE RESISTANCE MEMORY DEVICE - A method of writing data to a variable resistance element ( | 01-03-2013 |
20130148408 | METHOD OF PROGRAMMING VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT - A method of programming a variable resistance nonvolatile memory element that removes a defect in a resistance change, ensures an operation widow, and stably sustains a resistance change operation, the method including: applying, when the detect in the resistance change occurs in the variable resistance nonvolatile memory element, a recovery voltage pulse at least once to the variable resistance nonvolatile memory element, the recovery voltage pulse including: a first recovery voltage pulse that has an amplitude greater than amplitudes of a normal high resistance writing voltage pulse and a low resistance writing voltage pulse; and a second recovery voltage pulse that is the low resistance writing voltage pulse following the first recovery voltage pulse. | 06-13-2013 |
20130208531 | NONVOLATILE MEMORY DEVICE AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY DEVICE - A resistance variable layer changes: to a second resistance state in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a negative first voltage; to a first resistance state in such a manner that its resistance value starts increasing when the interelectrode voltage reaches a positive second voltage which is equal in absolute value to the first voltage; to the first resistance state in such a manner that the resistance variable layer flows an interelectrode current such that the interelectrode voltage is maintained at a third voltage higher than the second voltage, when the interelectrode voltage reaches the third voltage; and to the first resistance state in such a manner that its resistance value stops increasing when the interelectrode current reaches a first current in a state where the interelectrode voltage is not lower than the second voltage and lower than the third voltage. | 08-15-2013 |
20130250658 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: a first electrode; a second electrode; and a variable resistance layer which includes: a first oxide layer including a first metal oxide; a second oxide layer located between and in contact with the first oxide layer and a second electrode including a second metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than the degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer. | 09-26-2013 |
20140029330 | METHOD FOR DRIVING NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A method for driving a nonvolatile memory element includes: a writing step of changing a variable resistance layer to a low resistance state, by applying a writing voltage pulse having a first polarity; and an erasing step of changing the variable resistance layer to a high resistance state, by applying an erasing voltage pulse having a second polarity different from the first polarity, wherein in the writing step, a first input and output terminal of a field effect transistor is a source terminal of the transistor, and when a pulse width of the writing voltage pulse is PWLR and a pulse width of the erasing voltage pulse is PWHR, PWLR and PWHR satisfy a relationship of PWLR01-30-2014 | |
20140036572 | METHOD FOR DRIVING NONVOLATILE STORAGE ELEMENT, AND NONVOLATILE STORAGE DEVICE - Provided is a method for driving a variable resistance nonvolatile storage element that can improve the information holding capability. The method includes: determining whether or not a current that flows through the nonvolatile storage element is larger than or equal to a first verify level IRL (Verify); determining whether or not a current that flows through the nonvolatile storage element is smaller than or equal to a second verify level IRH (Verify); and determining that the nonvolatile storage element is in the second resistance state when the current that flows through the nonvolatile storage element is smaller than a current reference level Iref, and determining that the nonvolatile storage element is in the first resistance state when the current is larger than the current reference level Iref, the current reference level Iref satisfying (IRL (Verify)+IRH (Verify))/202-06-2014 | |
20140050014 | DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT AND NON-VOLATILE MEMORY DEVICE - A method of driving a variable resistance element comprises: before a first write step is performed, applying an initial voltage pulse of a first polarity to change a resistance value of a metal oxide layer from a resistance value corresponding to an initial state of the metal oxide layer to another resistance value; wherein when the resistance value corresponding to the initial state is R0, the resistance value corresponding to a write state is RL, the resistance value corresponding to an erase state is RH, another resistance value is R2, a maximum value of the current flowing when the initial voltage pulse is applied is IbRL, a maximum value of the current flowing when the write voltage pulse is applied is IRL, and a maximum value of the current flowing when the erase voltage pulse is applied is IRH, R0>RH>R2≧RL, and |IRL|>|IbRL| are satisfied. | 02-20-2014 |
20140063909 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, AND WRITING METHOD FOR USE IN NONVOLATILE MEMORY ELEMENT - In a nonvolatile memory element, when a voltage value of an electric pulse has a relationship of V2>V1>0 V>V3>V4 and a resistance value of a variable resistance layer has a relationship of R3>R2>R4>R1, the resistance value of the variable resistance layer becomes: R2, when the electric pulse having a voltage value of V2 or greater is applied between electrodes; R4, when the electric pulse having a voltage value of V4 or smaller is applied between the electrodes; R3, when the resistance value of the variable resistance layer is R2 and the electric pulse having a voltage value of V3 is applied between the electrodes; and R1, when the resistance value of the variable resistance layer is R4 and the electric pulse having a voltage value of V1 is applied between the electrodes. | 03-06-2014 |
20140126268 | METHOD OF DRIVING NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A method of driving a nonvolatile memory element including a variable resistance element having a state reversibly changing between low and high resistance states by an applied electrical signal and a transistor serially connected to the variable resistance element. The method including: setting the variable resistance element to the low resistance state by applying a first gate voltage to a gate of the transistor and applying a first write voltage negative with respect to a first electrode; and changing a resistance value of the transistor obtained in a low-resistance write operation, when a value of current passing through the variable resistance element in the setting of the low resistance state or a resistance value of the nonvolatile memory element in the case where the variable resistance element is in the low resistance state is outside a predetermined range. | 05-08-2014 |
20140278160 | ESTIMATION METHOD, ESTIMATION DEVICE, AND INSPECTION DEVICE FOR VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE MEMORY DEVICE - An estimation method for a variable resistance element including (i) a first electrode, (ii) a second electrode, and therebetween (iii) a variable resistance layer in which a local region is formed which has resistive status that reversibly changes according to an electric pulse applied between the first electrode and the second electrode, the estimation method including: obtaining, when changes are made to the resistive status of the local region, measurement values each indicating a resistance state after one of the changes; and determining, based on a distribution of the obtained measurement values, an estimated amount of a physical parameter regarding structural characteristics of the local region by a calculation. | 09-18-2014 |