Patent application number | Description | Published |
20120219897 | PHOTORESIST HAVING IMPROVED EXTREME-ULTRAVIOLET LITHOGRAPHY IMAGING PERFORMANCE - Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas: | 08-30-2012 |
20140038086 | Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same - A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag | 02-06-2014 |
20140111781 | METHOD AND APPARATUS FOR ULTRAVIOLET (UV) PATTERNING WITH REDUCED OUTGASSING - A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus. | 04-24-2014 |
20140256146 | Method and Structure to Improve Process Window for Lithography - The present disclosure provides a method for forming resist patterns. The method includes providing a substrate; forming a material layer including a plurality of quenchers on the substrate; forming a resist layer on the material layer; exposing the resist layer; and developing the resist layer to form a structure featuring resist remaining layer on an upper surface of the material layer, and a plurality of resist features on the resist remaining layer to improve the yield of lithography process | 09-11-2014 |
20140347644 | SYSTEM AND METHOD FOR PERFORMING LITHOGRAPHY PROCESS IN SEMICONDUCTOR DEVICE FABRICATION - Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height. | 11-27-2014 |
20150085264 | ROTARY EUV COLLECTOR - An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force. | 03-26-2015 |
20150241776 | Method for Lithography Patterning - A method of reducing resist outgassing for EUV lithography is disclosed. The method includes forming a material layer over a substrate wherein a top surface of the material layer contains a certain concentration of a quencher or a base. The method further includes forming a resist layer over the top surface of the material layer and exposing the resist layer to a EUV radiation for patterning. The quencher or the base underneath the resist layer acts to suppress resist outgassing during the EUV exposure. The material layer itself may serve as a hard mask layer or an anti-reflection layer for the patterning process, in addition to being the carrier of the quencher or the base. The method can be used in other types of lithography, such as e-beam lithography, for reducing resist outgassing. | 08-27-2015 |
20150262836 | Method for Integrated Circuit Patterning - Provided is a method of forming a pattern for an integrated circuit. The method includes forming a first layer over a substrate, wherein the first layer's etch rate is sensitive to a radiation, such as an extreme ultraviolet (EUV) radiation or an electron beam (e-beam). The method further includes forming a resist layer over the first layer and exposing the resist layer to the radiation for patterning. During the exposure, various portions of the first layer change their etch rate in response to an energy dose of the radiation received therein. The method further includes developing the resist layer, etching the first layer, and etching the substrate to form a pattern. The radiation-sensitivity of the first layer serves to reduce critical dimension variance of the pattern. | 09-17-2015 |