Patent application number | Description | Published |
20100087093 | CONNECTOR FOR ADAPTING ADAPTORS OF VARIOUS PROTOCOLS - A connector adaptor suitable for various transmission protocols is disclosed. The connector includes a hollow case, two positioning sets, two terminal sets. The two positioning sets are formed on the upper side and a lower side of said hollow case. The two terminal sets are connected to the positioning sets respectively, and said terminal sets are respectively connected to a flat face of said positioning set for an electrical connection. The hollow case is made in a plastic injection process. | 04-08-2010 |
20100087094 | Connector And Circuit Board For Multiple Transmission Interfaces - A connector and circuit board suitable for multiple transmission interfaces, which can be applied to storage devices or computer devices is disclosed. The connector device includes a connector case, and two transmission interfaces respectively disposed on upper and lower sides of the connector case. One end connector case serves to electrically connect with the circuit board, and another end serves as the transmission interfaces complying with at least two different specifications. Thus, the users may select suitable transmission interface according to actual needs. | 04-08-2010 |
20100288838 | CARD EJECTION UNIT OF AN IMPROVED IC CARD DEVICE - The card ejection unit of an improved IC card device has a base, a reading unit and a card ejection unit. The base has a horizontal slide track, a vertical slide track, a install's member, an axle and an elastic element. The reading unit has a reading portion, a soft circuit and calculation portion. The card ejection unit has a motor, a rotation bar, a horizontal buckle and a vertical elastic unit. The motor pushes the rotation bar, and when the rotation bar rotates, the push portion of the rotation bar pushes the horizontal buckle to release the vertical elastic element to eject out the IC card. | 11-18-2010 |
20110130041 | MINIPCI CONNECTOR - An improved MiniPCI connector structure includes a mini area bus connector and a set of plate type antenna connector. The bus connector comprises an upper unit and a lower unit buckling to each other. The upper unit has a plurality of contacting terminals within, and the adjacent sides of contacting terminals protrude out of the opening of the upper unit to form adapting slot and plug; the flange of the upper unit has two buckling portions, and the lower unit has corresponding adapting slot and corresponding buckling portion corresponding to the contacting terminals and the buckling portions at the flange of the upper unit. Thus, the interne card can be adapted into the adapting slot of the upper unit and the buckling of the buckling portion and the corresponding buckling portion enables the upper unit joining with the lower unit as a mini area bus connector and a set of plate type antenna connector positioning on the circuit board. | 06-02-2011 |
Patent application number | Description | Published |
20120181576 | INSULATED GATE BIPOLAR TRANSISTOR - An insulated gate bipolar transistor includes: a collector layer; a drift layer formed on and connected to the collector layer; a gate structure including a dielectric layer formed on the drift layer, and a conductive layer formed on the dielectric layer; a first emitter structure including a well region formed within the drift layer and partially connected to the dielectric layer of the gate structure, a source region formed within the well region just underneath a top surface of the well region, and a first electrode formed on the top surface of the well region and connected to the well region and the source region; and a second emitter structure spaced apart from the gate structure and the first emitter structure, and including a bypass region formed on the top surface of the drift layer, and a second electrode formed on the bypass region. | 07-19-2012 |
20120199903 | SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION - A semiconductor device having a super junction includes: a substrate having a first electrical type; a main body including a base part that has the first electrical type, and a modified part that has a second electrical type opposite to the first electrical type; a source zone contacting the modified part oppositely of the substrate, and having the first electrical type; and a gate structure having a dielectric layer that contacts the source zone, and a conductive layer formed on the dielectric layer oppositely of the main body. | 08-09-2012 |
20120248540 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate including a first epitaxial layer that has a first electrical type, and a second epitaxial layer; a transistor that includes a source region and an insulating spacer; an inner surrounding structure including an annular trench and an insulating spacer; an outer surrounding structure that has a second electrical type opposite to the first electrical type, and that is disposed adjacent to an upper surface of the second epitaxial layer to surround and contact the inner surrounding structure; and a conductive structure connecting to the source region, and the inner and outer surrounding structures. | 10-04-2012 |
20120252176 | METHOD FOR FABRICATING A POWER TRANSISTOR - A method for fabricating a power transistor includes: (a) forming a trench in a substrate with a first electrical type; (b) diffusing second electrical type carriers into the substrate from the trench such that the substrate is formed into a first part and a second part that is diffused with the second electrical type carriers and that adjoins the trench, the first and second parts being crystal lattice continuous to each other; (c) forming a filling portion in the trench, the filling portion adjoining the second part; (d) performing a carrier-implanting process in the second part and the filling portion; and (e) forming over the substrate a gate structure that has a dielectric layer and a conductive layer. | 10-04-2012 |