Patent application number | Description | Published |
20090086771 | NEGATIVE DISPERSION MIRROR AND MODE-LOCKED SOLID-STATE LASER APPARATUS INCLUDING THE MIRROR - In a mirror including a substrate and a dielectric multilayer coating structure formed on the substrate, the multilayer coating structure includes two mirror-function layer portions, each formed by a plurality of Layers deposited one on another, and a cavity layer that is arranged between the two mirror-function layer portions, and which causes light having a predetermined wavelength to resonate between the two mirror-function layer portions. Further, a dispersion value with respect to the light having the predetermined wavelength is in the range of −600 fs | 04-02-2009 |
20090316735 | MODE-LOCKED SOLID-STATE LASER APPARATUS - In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror being constituted by three or more multilayer mirrors and cavity layers arranged at predetermined intervals between the three or more multilayer mirrors, and causing a mirror dispersion of −3000 fsec | 12-24-2009 |
20090316736 | MODE-LOCKED SOLID-STATE LASER APPARATUS - In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror being constituted by two multilayer mirrors and a cavity layer sandwiched between the two multilayer mirrors, and causing a mirror dispersion of −3000 fsec | 12-24-2009 |
20090316737 | MODE-LOCKED SOLID-STATE LASER APPARATUS - In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror in which high-index layers and low-index layers, having optical thicknesses randomly varying in the range of one-eighth to half of the predetermined wavelength, are alternately laminated, and the negative-dispersion mirror causes a mirror dispersion of −1000 fsec | 12-24-2009 |
20100038558 | MODE-LOCKED LASER DEVICE, PULSED LASER LIGHT SOURCE DEVICE, MICROSCOPE DEVICE - There is provided a mode-locked laser including: a resonator having a pair of resonance mirrors; a solid-state laser medium, disposed in the resonator and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; a mode-locked element, disposed in the resonator for inducing mode locking; and a temperature adjusting unit that adjusts the temperature of the pair of resonance mirrors such that oscillating light of a specific frequency is output from the resonator. | 02-18-2010 |
20100103960 | MODE LOCKED LASER DEVICE - There is provided a mode locked laser device including: a cavity, the cavity having a semiconductor saturable absorbing mirror and a negative dispersion mirror that controls group velocity dispersion within the cavity, disposed in a straight line; a solid-state laser medium, disposed in the cavity and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; and a cavity holder, the light incident face of the semiconductor saturable absorbing mirror attached to one end of the cavity holder, the negative dispersion mirror attached to the other end of the cavity holder, and the cavity holder integrally supporting the semiconductor saturable absorbing mirror and the negative dispersion mirror. | 04-29-2010 |
20100103961 | MODE-LOCKED LASER DEVICE, ULTRASHORT PULSE LIGHT SOURCE DEVICE, BROAD BANDWIDTH LIGHT SOURCE DEVICE, NON-LINEAR OPTICAL MICROSCOPY DEVICE, RECORDING DEVICE AND OPTICAL COHERENCE TOMOGRAPHY DEVICE - There is provided a mode-locked laser device including: a resonator; a solid-state laser medium that is disposed in the resonator and outputs oscillation light in accordance with the incidence of excitation light; a saturable absorber that is disposed in the resonator and induces soliton mode-locking; a group velocity dispersion correction component that is disposed in the resonator and controls group velocity dispersion in the resonator; and an excitation portion that causes excitation light to be incident at the solid-state laser medium, wherein a resonator length of the resonator is at least a resonator length with which soliton mode-locking is inducible and is less than a resonator length with which non-soliton mode-locking is inducible. | 04-29-2010 |
20140016127 | OPTICAL ELECTRICAL FIELD ENHANCING DEVICE AND MEASURING APPARATUS EQUIPPED WITH THE DEVICE - An optical electrical field enhancing device includes: a transparent substrate having a structure of fine protrusions and recesses on the surface thereof; and a metal structure layer of fine protrusions and recesses formed on the surface of the structure of fine protrusions and recesses. The metal structure layer of fine protrusions and recesses has a structure of fine protrusions and recesses, in which the distances among adjacent protrusions are less than the distances among corresponding adjacent protrusions of the structure of fine protrusions and recesses of the transparent substrate. | 01-16-2014 |
20140034235 | METHOD FOR PRODUCING OPTICAL ELECTRICAL FIELD ENHANCING DEVICE - A thin film of a first metal or a metal oxide is formed on a substrate. A structure layer of fine protrusions and recesses of the first metal or a hydroxide of the metal oxide is formed by causing the thin film formed on the substrate to undergo a hydrothermal reaction. Thereafter, a metal structure layer of fine protrusions and recesses is formed on the surface of the structure layer of fine protrusions and recesses. | 02-06-2014 |
20140071447 | RAMAN SPECTROMETRY METHOD AND RAMAN SPECTROMETRY APPARATUS - A surface enhanced Raman spectrometry apparatus is constituted by: a transparent substrate; a metal member that causes surface enhanced Raman scattering to occur, formed on a surface of the transparent substrate; a pressing mechanism that presses a sample placed in contact with the metal member against the metal member; a measuring light irradiating optical system that irradiates a measuring light beam onto the sample through the transparent substrate; and a light detecting section that spectrally detects Raman scattered light, which is generated when the measuring light beam is irradiated onto the sample, through the transparent substrate. | 03-13-2014 |