Patent application number | Description | Published |
20090130335 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW - A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased. | 05-21-2009 |
20090255901 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND TRAY | 10-15-2009 |
20100051584 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 03-04-2010 |
20100096088 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a pressure-reducible chamber | 04-22-2010 |
20100173431 | WAFER RECLAMATION METHOD AND WAFER RECLAMATION APPARATUS - Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step. | 07-08-2010 |
20110111601 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed. | 05-12-2011 |
20120006489 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrude upward, and has an electrostatic chuck electrode therein. The substrate supporting section which supports the substrate contained in the substrate containing holes is provided with a plurality of protruding sections formed at intervals in the circumferential direction of the substrate containing holes. The substrates are supported in point-contact mode by means of the protruding sections. | 01-12-2012 |
20120256363 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion. | 10-11-2012 |
20130068726 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus | 03-21-2013 |
20130068727 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors. | 03-21-2013 |
20130168353 | PLASMA PROCESSING METHOD FOR SUBSTRATES - A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed. | 07-04-2013 |
20140048527 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion. | 02-20-2014 |
20140154832 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A dry etching apparatus includes a tray for conveying substrates. The tray has substrate housing holes as through holes each capable of housing the three substrates. The substrates are supported by a substrate support section protruding from a hole wall of each of the substrate housing holes. A stage is provided in a chamber in which plasma is generated. The stage includes substrate installation sections to be inserted from a lower surface side of the tray to the substrate housing holes so that lower surfaces of the plurality of the substrates transferred from the substrate support section are installed on substrate installation surfaces that are their upper end surfaces. High shape controllability and favorable productivity for the angular substrate can be implemented while preventing increased in size of the apparatus. | 06-05-2014 |
20150059980 | PLASMA PROCESSING APPARATUS - In plasma processing, damage on a cover is prevented while thermal effect on an annular frame is suppressed. Plasma processing is applied to a substrate held by a carrier including an annular frame and a holding sheet. There are provided a chamber having a decompressible internal space, a plasma source for generating plasma in the chamber, a stage that is provided in the chamber and places the carrier thereon, and a cover that is placed above the stage to cover the holding sheet and the frame, and has a window penetrating through the thickness of the cover. The cover is made of a material having a high thermal conductivity, and a front face exposed to plasma, at least on the side of the window of the cover, is covered with a protect part made of a material having a low reactivity with plasma. | 03-05-2015 |